公开(公告)号：US20070080463A1

公开(公告)日：2007-04-12

申请号：US11540599

申请日：2006-10-02

申请人： Akira Furuya

发明人： Akira Furuya

IPC分类号： H01L23/48

CPC分类号： H01L21/76849 ,  H01L21/76822 ,  H01L21/76834 ,  H01L21/76867 ,  H01L21/76886 ,  H01L21/76888

摘要： A semiconductor device includes a semiconductor substrate, a lower insulating film formed on the semiconductor substrate, an interconnect-forming metal film provided so as to fill a recess formed in the surficial portion of the lower insulating film, and containing copper as a major constituent, an upper insulating film formed on the lower insulating film, and a metal-containing layer formed between the lower insulating film and the upper insulating film, and containing a metal different from copper. The metal-containing layer includes a first region in contact with the interconnect-forming metal film, and a second region in contact with the lower insulating film, and having a composition different from that of the first region, and contains substantially no nitrogen at least in the first region.

摘要翻译： 半导体器件包括半导体衬底，形成在半导体衬底上的下绝缘膜，设置成填充形成在下绝缘膜的表面部分中的凹部并且以铜为主要成分的互连形成金属膜， 形成在下绝缘膜上的上绝缘膜和形成在下绝缘膜和上绝缘膜之间并含有不同于铜的金属的含金属层。 含金属层包括与互连形成金属膜接触的第一区域和与下绝缘膜接触的第二区域，并且具有与第一区域不同的组成，并且至少基本上不含氮 在第一个地区。

公开(公告)号：US07170172B2

公开(公告)日：2007-01-30

申请号：US10318199

申请日：2002-12-13

申请人： Hiroaki Tomimori ,  Hidemitsu Aoki ,  Kaoru Mikagi ,  Akira Furuya ,  Tetsuya Tao

发明人： Hiroaki Tomimori ,  Hidemitsu Aoki ,  Kaoru Mikagi ,  Akira Furuya ,  Tetsuya Tao

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03019 ,  H01L2224/035 ,  H01L2224/0381 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05557 ,  H01L2224/05561 ,  H01L2224/05567 ,  H01L2224/05647 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2224/05552

摘要： An oxide film formed on the surface of copper film of an electrode pad is cleaned by oxalic acid after unevenness is formed on the surface of copper film by treating the surface with organic acid. Thereby, stable resistance is obtained when carrying out a characteristic inspection by bringing a probe into contact with the electrode pad, and it is easily recognized by observation through a microscope that the probe is brought into contact with the electrode pad. In addition, wettability with respect to solder is satisfactory, and it is possible to favorably form a solder bump on the electrode pad.

摘要翻译： 通过用有机酸处理表面，在铜膜的表面上形成凹凸后，用草酸清洗形成在电极焊盘的铜膜表面上的氧化膜。 由此，通过使探针与电极焊盘接触进行特性检查时，获得稳定的电阻，并且通过用显微镜观察容易地识别出探针与电极焊盘接触。 此外，相对于焊料的润湿性是令人满意的，并且可以有利地在电极焊盘上形成焊料凸块。

公开(公告)号：US20060115963A1

公开(公告)日：2006-06-01

申请号：US11283769

申请日：2005-11-22

申请人： Akira Furuya ,  Nobuyuki Otsuka ,  Hiroshi Okamura ,  Shinichi Ogawa

发明人： Akira Furuya ,  Nobuyuki Otsuka ,  Hiroshi Okamura ,  Shinichi Ogawa

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/022 ,  H01L21/02123 ,  H01L21/02175 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76862 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the invention is to provide a semiconductor device which includes a barrier metal having high adhesiveness and diffusion barrier properties and a method of manufacturing the semiconductor device. The invention provides a semiconductor device manufacturing method including forming a first layer made of a material containing silicon on a base substance; forming a second layer containing metal and nitrogen on the first layer; and exposing the second layer to active species obtained from plasma in an atmosphere including reducing gas.

摘要翻译： 本发明的目的是提供一种包括具有高粘合性和扩散阻挡性的阻挡金属的半导体器件和制造半导体器件的方法。 本发明提供一种半导体器件制造方法，包括在基体上形成由含硅的材料制成的第一层; 在所述第一层上形成含有金属和氮的第二层; 并将第二层暴露于包括还原气体的气氛中从等离子体获得的活性物质。

公开(公告)号：US20050139186A1

公开(公告)日：2005-06-30

申请号：US11011507

申请日：2004-12-14

申请人： Akira Furuya

发明人： Akira Furuya

IPC分类号： F16C9/04 ,  F01M9/06 ,  F02M9/06

CPC分类号： F01M9/06

摘要： A lubrication structure for splash lubrication in an engine includes an oil collector formed as a depression in the outer peripheral surface of the crank pin and an oil groove provided on the big-end of the connecting rod. The oil collector is formed approximately at the center, in an axial direction, of the crank pin. The position of the oil collector is chosen so as to be displaced from an explosive force in an expansion cycle of the engine. The oil groove is provided on the big-end of the connecting rod, and has a first end and a second end. The first end is open in the inner peripheral surface at the center thereof in an axial direction, and the second end is open into the crank case. The oil collector receives oil stored in the crank case and the oil is transferred to the oil groove.

摘要翻译： 发动机中飞溅润滑的润滑结构包括在曲柄销的外周面上形成为凹陷部的集油器和设置在连杆大端上的油槽。 集油器大致形成在曲柄销的轴向的中心。 选择集油器的位置以便在发动机的膨胀循环中从爆炸力移位。 油槽设置在连杆的大端，并具有第一端和第二端。 第一端部在内周面的轴心方向的中心开口，第二端部开放到曲轴箱内。 集油器接收存储在曲轴箱中的油，油被转移到油槽。

公开(公告)号：US06557515B2

公开(公告)日：2003-05-06

申请号：US09864075

申请日：2001-05-22

申请人： Akira Furuya ,  Takao Sakai

发明人： Akira Furuya ,  Takao Sakai

IPC分类号： F01M906

CPC分类号： F02B75/16 ,  F01M9/10 ,  F02B2075/027 ,  F02B2275/20 ,  F02F7/006 ,  F05C2201/021

摘要： A ceiling surface of a rocker cover mounted on a top of a cylinder head has an oil guide groove and an oil dripping portion. The oil guide groove extends along a rotation direction of a chain and faces the chain for guiding lubricating oil droplets separated from the chain into a single flow in a certain direction. The oil dripping portion is continuous with the oil guide groove and protruding toward a valve-operating device for dripping the lubricating oil guided by the oil guide groove onto the valve-operating device. Oil droplets thrown off from the chain are collected by the oil guide groove and dripped onto the valve-operating device via the oil dripping portion. Therefore, it can effectively supply the oil to a position where the valve-operating cam slidably contacts with the slipper, thereby improving the frictional resistance of the valve-operating device.

公开(公告)号：US06508238B2

公开(公告)日：2003-01-21

申请号：US09864073

申请日：2001-05-22

申请人： Akira Furuya

发明人： Akira Furuya

IPC分类号： F01M906

CPC分类号： F01M13/022 ,  F01M13/04 ,  F02B75/16 ,  F02B2275/20

摘要： A cylinder head is provided with a gas-liquid separation chamber apart from a chain chamber. The gas-liquid separation chamber is communicated with a crank chamber via a gas inlet and the chain chamber. The gas inlet is opened in the side direction of a chain within the chain chamber, and has an inclined bottom surface. At an upper end portion of the gas-liquid separation chamber is mounted an oil flow back chamber, which has an opening to communicate with a chain chamber. A blow-by gas in the crank chamber is guided into the gas-liquid separation chamber, where an oil component is separated, and then fed into another gas-liquid separation chamber in order to separate the oil component in two steps. Thereby, the oil component in the blow-by gas can be securely separated without adding new components or causing complication in a structure of breather system of an engine.

公开(公告)号：US06225656B1

公开(公告)日：2001-05-01

申请号：US09204033

申请日：1998-12-01

申请人： Joseph D. Cuchiaro ,  Akira Furuya ,  Carlos A. Paz de Araujo ,  Yoichi Miyasaka

发明人： Joseph D. Cuchiaro ,  Akira Furuya ,  Carlos A. Paz de Araujo ,  Yoichi Miyasaka

IPC分类号： H01L2972

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/56 ,  H01L2924/0002 ,  H01L2924/00

摘要： A protective layer in a ferroelectric integrated circuit contains small amounts of oxygen to protect ferroelectric oxide material against hydrogen degradation during the fabrication process. Typically, the protective layer is a hydrogen diffusion barrier layer formed to cover a thin film of ferroelectric oxide material. In one method, a small amount of oxygen is included in the sputter atmosphere during deposition of a hydrogen diffusion barrier or a metallized wiring layer. The oxygen forms oxides that inhibit diffusion of hydrogen towards the ferroelectric oxide material. The oxygen forms a concentration gradient so that the oxygen concentration in the interior of the protective layer is zero, and the oxygen concentration near the surfaces of the layer is about two weight percent.

摘要翻译： 铁电集成电路中的保护层含有少量的氧以保护铁电氧化物材料在制造过程中抵抗氢降解。 通常，保护层是形成为覆盖铁电氧化物材料的薄膜的氢扩散阻挡层。 在一种方法中，在沉积氢扩散阻挡层或金属化布线层期间，溅射气氛中包含少量的氧。 氧形成抑制氢向铁电氧化物材料扩散的氧化物。 氧形成浓度梯度，使得保护层内部的氧浓度为零，并且层表面附近的氧浓度为约2重量％。

公开(公告)号：US5236831A

公开(公告)日：1993-08-17

申请号：US474648

申请日：1990-02-02

申请人： Ryoichi Katsumata ,  Akio Ozaki ,  Toru Mizukami ,  Motoko Kageyama ,  Morimasa Yagisawa ,  Tamio Mizukami ,  Seiga Itoh ,  Tetsuo Oka ,  Akira Furuya

发明人： Ryoichi Katsumata ,  Akio Ozaki ,  Toru Mizukami ,  Motoko Kageyama ,  Morimasa Yagisawa ,  Tamio Mizukami ,  Seiga Itoh ,  Tetsuo Oka ,  Akira Furuya

IPC分类号： C12N9/88 ,  C12N15/52 ,  C12N15/77 ,  C12P13/08 ,  C12P13/14

CPC分类号： C12N15/52 ,  C12N15/77 ,  C12N9/88 ,  C12P13/08 ,  C12P13/14

摘要： Disclosed is a process for expressing a gene and producing a metabolic product formed by the gene by culturing a transformant microorganism carrying a recombinant DNA constructed of a DNA fragment having at least one gene to be expressed and a vector DNA, at least one of which is foreign to the host microorganism.

摘要翻译： 公开了通过培养携带由具有至少一种待表达基因的DNA片段和载体DNA构建的重组DNA的转化体微生物来表达基因并产生由该基因形成的代谢产物的方法，其中至少一种是 外来宿主微生物。

公开(公告)号：US4681847A

公开(公告)日：1987-07-21

申请号：US695574

申请日：1985-01-28

申请人： Ryoichi Katsumata ,  Tetsuo Oka ,  Akira Furuya

发明人： Ryoichi Katsumata ,  Tetsuo Oka ,  Akira Furuya

IPC分类号： C12N15/77 ,  C12N15/00 ,  C12N1/00 ,  C12N1/06 ,  C12N1/20 ,  C12N9/36 ,  C12P19/34 ,  C12P21/00 ,  C12R1/13 ,  C12R1/15

CPC分类号： C12R1/13 ,  C12N15/77 ,  C12R1/15 ,  Y10S435/84 ,  Y10S435/843

摘要： A novel lysozyme-sensitive microorganism belonging to the genus Corynebacterium or Brevibacterium and having a sensitivity to lysozyme at a concentration of less than 25 .mu.g/ml is provided from selected mutants. This novel microorganism is especially suitable for use in recombinant DNA technology.

摘要翻译： 从选择的突变体提供属于棒杆菌属或短杆菌属的新型溶菌酶敏感性微生物，其浓度低于25μg/ ml对溶菌酶具有敏感性。 该新型微生物特别适用于重组DNA技术。

公开(公告)号：US08679253B2

公开(公告)日：2014-03-25

申请号：US11704295

申请日：2007-02-09

申请人： Akira Furuya

发明人： Akira Furuya

IPC分类号： C23C16/00 ,  C23C16/455 ,  C23C16/52

CPC分类号： C23C16/452 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45561 ,  C23C16/515

摘要： An enhanced utilization efficiency of gases can be presented and an improved deposition characteristics are presented, when a film is deposited with a plurality of gases. A deposition apparatus 100 includes: a reaction chamber 102 for depositing a film; a first gas supply line 112 and a second gas supply line 152 for supplying a first source material A and a gas B to a reaction chamber 102, respectively; and an exciting unit 106 that is capable of exciting a gas supplied in the reaction chamber 102 to form a plasma. In the deposition apparatus 100 having such configuration, a deposition operation is performed by: a first operation for supplying a gas derived from a first source material A and a gas B in the reaction chamber 102 to cause the gas derived from a first source material A adsorbed on the substrate, thereby forming a deposition layer; and a second operation for supplying a second gas in reaction chamber 102, and treating the deposition layer with the gas in a condition of being plasma-excited.

摘要翻译： 当使用多种气体沉积膜时，可以提供气体的提高的利用效率并提出改进的沉积特性。 沉积设备100包括：用于沉积膜的反应室102; 分别将第一源材料A和气体B分别供应到反应室102中的第一气体供应管线112和第二气体供应管线152; 以及激励单元106，其能够激励在反应室102中供应的气体以形成等离子体。 在具有这种结构的沉积设备100中，通过以下步骤进行沉积操作：第一操作，用于将来自第一源材料A和气体B的气体供应到反应室102中，以产生源自第一源材料A的气体 吸附在基板上，从而形成沉积层; 以及用于在反应室102中供应第二气体并在等离子体激发的条件下用气体处理沉积层的第二操作。