公开(公告)号：US11127571B2

公开(公告)日：2021-09-21

申请号：US16750001

申请日：2020-01-23

Applicant: Lam Research Corporation

Inventor： Sang Ki Nam ,  Rajinder Dhindsa ,  James Rogers

IPC: H01J37/32 ,  H01L21/683

Abstract: A chuck assembly for plasma processing, including: an electrostatic chuck having a substrate support surface on a first side; a facility plate coupled to the electrostatic chuck on a second side; a RF feed defined by a first portion contacting a periphery of the facility plate and a second portion coupled to the first portion, the second portion extending away from the chuck assembly, the first portion being a bowl-shaped section, wherein the second portion connects to the first portion at an opening defined in the bowl-shaped section; wherein the first portion of the RF feed contacts the periphery of the facility plate at a circumference circumference having a radius greater than one-half of a radius of the facility plate, the radius of the circumference being less than the radius of the facility plate; a grounded shield disposed below and surrounding at least a portion of the bowl-shaped section.

公开(公告)号：US20200227237A1

公开(公告)日：2020-07-16

申请号：US16832907

申请日：2020-03-27

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/67

Abstract: Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode. The system controller is operable to regulate the flow of species between the chambers to assist in the negative-ion etching, to neutralize excessive positive charge on the wafer surface during afterglow in the OFF-period, and to assist in the re-striking of the bottom plasma during the ON-period.

公开(公告)号：US10161042B2

公开(公告)日：2018-12-25

申请号：US13670350

申请日：2012-11-06

Applicant: Lam Research Corporation

Inventor： Rajinder Dhindsa

IPC: H01J37/32 ,  C23C16/52 ,  H05H1/24 ,  C23C16/505 ,  C23C16/509 ,  C23C16/50 ,  H05H1/46

Abstract: A plasma processing system has an upper electrode and a lower electrode. The upper electrode includes a first and a second upper electrode portions. The first upper electrode portion annularly surrounds the second upper electrode portion. The lower electrode includes a first and a second lower electrode portions, and the first lower electrode portion annularly surrounds the second lower electrode portion. A radio frequency (RF) power source provides RF energy to the second lower electrode portion. The lower surface of the first upper electrode portion is non-planar with a substrate-facing surface of the second upper electrode portion such that the first gap between the lower surface of the first upper electrode portion and the upper surface of the first lower electrode portion is smaller than the second gap between the substrate bearing surface of the second lower electrode portion and the substrate-facing surface of the second upper electrode portion.

公开(公告)号：US20180166256A1

公开(公告)日：2018-06-14

申请号：US15882429

申请日：2018-01-29

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Rajinder Dhindsa

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32165

Abstract: Circuits, methods, chambers, systems, and computer programs are presented for processing wafers. A wafer processing apparatus includes top and bottom electrodes inside a processing chamber; a first, second, third, and fourth radio frequency (RF) power sources; and one or more resonant circuits. The first, second, and third RF power sources are coupled to the bottom electrode. The top electrode may be coupled to the fourth RF power source, to electrical ground, or to the one or more resonant circuits. Each of the one or more resonant circuits, which are coupled between the top electrode and electrical ground, include a tune-in element operable to vary a frequency-dependent impedance presented by the resonant circuit. The wafer processing apparatus is configurable to select the RF power sources for wafer processing operations, as well as the connections to the top electrode in order to provide plasma and etching uniformity for the wafer.

公开(公告)号：US20160307737A1

公开(公告)日：2016-10-20

申请号：US15192397

申请日：2016-06-24

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Rajinder Dhindsa

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32568 ,  H01J37/32577 ,  H05B7/18

Abstract: Systems and methods for controlling a plasma edge region are described. One of the systems includes a top electrode and a bottom electrode. The system also includes an upper electrode extension and a lower electrode extension. At least a portion of the plasma edge region is formed between the upper electrode extension and the lower electrode extension. The system includes a circuit to control a radio frequency signal at the upper electrode extension.

公开(公告)号：US20160204007A1

公开(公告)日：2016-07-14

申请号：US15076573

申请日：2016-03-21

Applicant: Lam Research Corporation

Inventor： Rajinder Dhindsa ,  Harmeet Singh ,  Sang Ki Nam

IPC: H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32816 ,  H01L21/3065

Abstract: A method for modulating a pressure in a plasma processing volume of a chamber during a plasma processing operation is disclosed. The plasma processing volume is defined between a surface of a top electrode, a supporting surface of a substrate support and an outer region defined by a plasma confinement structure that encloses an outer perimeter of the plasma processing volume. The plasma confinement structure includes a plurality of equally distributed openings out of the plasma processing volume. The method includes supplying process gases to the processing volume during the plasma processing operation and supplying radio frequency (RF) power to the chamber to produce a plasma using the process gases and to produce gas byproducts. The method further includes controlling a position of a conductance control structure relative to the plasma confinement structure. During a first period of time of the plasma processing operation, the position of the conductance control structure is moved to increase a restriction the produced gas byproducts that flow out of the process volume through the plasma confinement structure. During a second period of time of the plasma processing operation, the position of the conductance control structure is moved to decrease a restriction the produced gas byproducts that flow out of the process volume through the plasma confinement structure. The movement of the conductance control structure functions to module the pressure during the plasma processing operation.

Abstract translation: 公开了一种用于在等离子体处理操作期间调制室的等离子体处理体积中的压力的​​方法。 等离子体处理体积限定在顶部电极的表面，衬底支撑件的支撑表面和由包围等离子体处理体积的外周边的等离子体限制结构限定的外部区域之间。 等离子体约束结构包括离开等离子体处理体积的多个均匀分布的开口。 该方法包括在等离子体处理操作期间向处理体积提供处理气体，并且向室提供射频（RF）功率以使用该工艺气体产生等离子体并产生气体副产物。 该方法还包括控制电导控制结构相对于等离子体限制结构的位置。 在等离子体处理操作的第一时间段期间，移动电导控制结构的位置以增加通过等离子体限制结构流出处理体积的产生的气体副产物的限制。 在等离子体处理操作的第二时间段期间，移动电导控制结构的位置以减少通过等离子体限制结构流出处理体积的产生的气体副产物的限制。 电导控制结构的运动用于在等离子体处理操作期间模块化压力。

公开(公告)号：US20150357209A1

公开(公告)日：2015-12-10

申请号：US14827052

申请日：2015-08-14

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Mirzafer K. Abatchev ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/311

CPC classification number: H01L21/67069 ,  C23C14/345 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/32137 ,  H01J2237/334 ,  H01J2237/3343 ,  H01J2237/3348 ,  H01L21/3065 ,  H01L21/31116 ,  H01L22/20 ,  H05H2001/4675

Abstract: Apparatus, methods, and computer programs for semiconductor processing in a capacitively-coupled plasma chamber are provided. A chamber includes a bottom radio frequency (RF) signal generator, a top RF signal generator, and an RF phase controller. The bottom RF signal generator is coupled to the bottom electrode in the chamber, and the top RF signal generator is coupled to the top electrode. Further, the bottom RF signal is set at a first phase, and the top RF signal is set at a second phase. The RF phase controller is operable to receive the bottom RF signal and operable to set the value of the second phase. Additionally, the RF phase controller is operable to track the first phase and the second phase to maintain a time difference between the maximum of the top RF signal and the minimum of the bottom RF signal at approximately a predetermined constant value, resulting in an increase of the negative ion flux to the surface of the wafer.

Abstract translation: 提供了在电容耦合等离子体室中用于半导体处理的装置，方法和计算机程序。 腔室包括底部射频（RF）信号发生器，顶部RF信号发生器和RF相位控制器。 底部RF信号发生器耦合到室中的底部电极，并且顶部RF信号发生器耦合到顶部电极。 此外，底部RF信号被设置在第一相位，并且顶部RF信号被设置在第二阶段。 RF相位控制器可操作以接收底部RF信号并且可操作以设置第二相位的值。 此外，RF相位控制器可操作以跟踪第一相位和第二相位，以保持最大RF信号的最大值与底部RF信号的最小值之间的时间差大约为预定的常数值，导致增加 到晶片表面的负离子通量。

公开(公告)号：US09039911B2

公开(公告)日：2015-05-26

申请号：US13626793

申请日：2012-09-25

Applicant: Lam Research Corporation

Inventor： Eric A. Hudson ,  Andrew D. Bailey, III ,  Rajinder Dhindsa

IPC: B44C1/22 ,  H01J37/32 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32458 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069

Abstract: Methods for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma generating region by a semi-barrier structure. The method includes generating a primary plasma from a primary feed gas in the primary plasma generating region. The method also includes generating a secondary plasma from a secondary feed gas in the secondary plasma generating region to enable at least some species from the secondary plasma to migrate into the primary plasma generating region. The method additionally includes etching the substrate with the primary plasma after the primary plasma has been augmented with migrated species from the secondary plasma.

Abstract translation: 用于蚀刻具有至少一个初级等离子体产生区域的等离子体处理室中的衬底和通过半屏障结构从所述初级等离子体产生区域分离的次级等离子体产生区域的方法。 该方法包括从主要等离子体产生区域中的主进料气体产生主要等离子体。 该方法还包括从次级等离子体产生区域中的二次进料气体产生二次等离子体，以使至少一些来自第二等离子体的物质迁移到初级等离子体产生区域。 该方法另外包括在初级等离子体已经用来自二次等离子体的迁移物质增强之后用初级等离子体蚀刻基板。

公开(公告)号：US20150091441A1

公开(公告)日：2015-04-02

申请号：US14043574

申请日：2013-10-01

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Ken Lucchesi ,  Luc Albarede

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32174 ,  H01J37/32449 ,  H01J37/32532 ,  H01J2237/3323 ,  H01J2237/3344

Abstract: A plasma system includes an RF generator and a matchbox including an impedance matching circuit, which is coupled to the RF generator via an RF cable. The plasma system includes a chuck and a plasma reactor coupled to the matchbox via an RF line. The RF line forms a portion of an RF supply path, which extends between the RF generator through the matchbox, and to the chuck. The plasma system further includes a phase adjusting circuit coupled to the RF supply path between the impedance matching circuit and the chuck. The phase adjusting circuit has an end coupled to the RF supply path and another end that is grounded. The plasma system includes a controller coupled to the phase adjusting circuit. The controller is used for changing a parameter of the phase adjusting circuit to control an impedance of the RF supply path based on a tune recipe.

Abstract translation: 等离子体系统包括RF发生器和包括阻抗匹配电路的火柴盒，其通过RF电缆耦合到RF发生器。 等离子体系统包括通过RF线耦合到火柴盒的卡盘和等离子体反应器。 RF线形成RF供应路径的一部分，RF供应路径在RF发生器之间通过火柴盒和卡盘延伸。 等离子体系统还包括耦合到阻抗匹配电路和卡盘之间的RF供给路径的相位调整电路。 相位调整电路具有耦合到RF供给路径的一端和接地的另一端。 等离子体系统包括耦合到相位调整电路的控制器。 控制器用于改变相位调整电路的参数，以基于调谐配方控制RF供应路径的阻抗。

公开(公告)号：US20140315392A1

公开(公告)日：2014-10-23

申请号：US13867522

申请日：2013-04-22

Applicant: LAM RESEARCH CORPORATION

Inventor： Lin Xu ,  Hong Shih ,  Anthony Amadio ,  Rajinder Dhindsa ,  John Michael Kerns ,  John Daugherty

IPC: H01L21/67

CPC classification number: C23C16/4404 ,  H01J37/32477 ,  Y10T428/12736 ,  Y10T428/12806 ,  Y10T428/12819 ,  Y10T428/1284 ,  Y10T428/12861 ,  Y10T428/12896 ,  Y10T428/12903 ,  Y10T428/12944 ,  Y10T428/12951 ,  Y10T428/12979 ,  Y10T428/265 ,  Y10T428/31678

Abstract: A cold spray barrier coated component of a semiconductor plasma processing chamber comprises a substrate having at least one metal surface wherein a portion of the metal surface is configured to form an electrical contact. A cold spray barrier coating is formed from a thermally and electrically conductive material on at least the metal surface configured to form the electrical contact of the substrate. Further, the cold spray barrier coating may also be located on a plasma exposed and/or process gas exposed surface of the component.

Abstract translation: 半导体等离子体处理室的冷喷涂屏障涂层部件包括具有至少一个金属表面的基板，其中金属表面的一部分被配置成形成电接触。 至少金属表面上的热导电材料形成冷喷涂阻挡涂层，所述金属表面被构造成形成基板的电接触。 此外，冷喷涂阻挡涂层也可以位于组件的等离子体暴露和/或处理气体暴露表面上。