Methods for forming group III-V arsenide-nitride semiconductor materials
    71.
    发明授权
    Methods for forming group III-V arsenide-nitride semiconductor materials 失效
    形成III-V族氮化镓半导体材料的方法

    公开(公告)号:US6130147A

    公开(公告)日:2000-10-10

    申请号:US820727

    申请日:1997-03-18

    IPC分类号: H01L33/32 H01S5/323 H01L21/28

    摘要: Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

    摘要翻译: 公开了用于形成III族 - 氮化物 - 氮化物半导体材料的方法。 III族元素与V族元素组合,包括至少氮和砷,其浓度选择为与市售的晶体基质匹配。 这些III-V晶体的外延生长导致直接的带隙材料,其可以用于诸如发光二极管和激光器的应用中。 改变III-V晶体中元素的浓度会改变带隙,从而可以产生跨越可见光谱的光的材料,以及中红外和近紫外线发射器。 相反,这种材料可用于产生获得光并将光转换成电的装置,用于诸如全色光电检测器和太阳能收集器的应用。 III-V晶体的生长可以通过在导致总体晶格匹配和带隙期望的序列中生长薄层的元素或化合物来实现。

    External cavity, continuously tunable wavelength source
    72.
    发明授权
    External cavity, continuously tunable wavelength source 失效
    外腔,连续可调波长源

    公开(公告)号:US6049554A

    公开(公告)日:2000-04-11

    申请号:US984485

    申请日:1997-12-01

    摘要: An external cavity, continuously tunable wavelength source comprising a coherent light source having an external cavity including a reflector, such as a mirror or right-angle prism, for reflecting a selected wavelength from a diffraction grating back into the coherent light source. The wavelength is selected by simultaneous rotation and linear translation of the reflector about a pivot point such that the optical path length of the external cavity is substantially identical to a numerical integer of half wavelengths at a plurality of tunable wavelengths about a central wavelength of a tunable bandwidth for the source such that cavity phase error is zero at the central wavelength and is maximally flat on either side of the center wavelength within the tunable bandwidth. The location of said pivot axis is chosen to set the cavity phase error equal to zero and its first and second derivatives substantially equal to zero at exactly one wavelength. The external cavity may be either a Littman optical cavity configuration or a Littrow external cavity configuration. The output of the coherent light source is optically coupled to a gain element for amplification.

    摘要翻译: 包括相干光源的外部腔,连续可调波长源,其具有包括诸如反射镜或直角棱镜的反射器的外部空腔,用于将所选择的波长从衍射光栅反射回相干光源。 通过围绕枢转点的反射器的同时旋转和线性平移来选择波长,使得外部空腔的光路长度基本上与可调谐的中心波长的多个可调波长处的半波长的数值整数相同 带宽,使得中心波长处的腔相位误差为零,并且在可调谐带宽内的中心波长的任一侧上最大为平坦。 选择所述枢转轴线的位置以将空腔相位误差设定为零,其第一和第二导数在正好一个波长处基本上等于零。 外腔可以是Littman光腔配置或Littrow外腔配置。 相干光源的输出光耦合到用于放大的增益元件。

    Passivation and protection of a semiconductor surface
    74.
    发明授权
    Passivation and protection of a semiconductor surface 失效
    半导体表面的钝化和保护

    公开(公告)号:US5799028A

    公开(公告)日:1998-08-25

    申请号:US683495

    申请日:1996-07-18

    IPC分类号: H01L33/44 H01S5/028 H01S3/19

    摘要: A surface of a compound III-V semiconductor device is passivated and protected, respectively, by treatment with a sulfur-containing or selenium-containing passivation film on the surface followed by the deposit of a GaN, GaP, InGaP, GaAsP, ZnS or ZnSe protection layer. Prior to passivation and deposition of the protective layer, previously formed contact metalizations may be protected with a liftoff film or layer. A low temperature MOCVD process is used to deposit the protection layer so that the integrity of the previously deposited contact metalization is maintained. The preferred range for MOCVD deposition of the protection layer is in the range of about 300.degree. C. to about 450.degree. C. This processing temperature range is within a temperature range where stable contact metalization exists.

    摘要翻译: 化合物III-V半导体器件的表面分别被钝化和保护,通过用表面上的含硫或含硒钝化膜处理,然后沉积GaN,GaP,InGaP,GaAsP,ZnS或ZnSe 保护层。 在钝化和沉积保护层之前,预先形成的接触金属化可以用剥离膜或层保护。 使用低温MOCVD工艺沉积保护层,以保持先前沉积的接触金属化的完整性。 保护层的MOCVD沉积的优选范围在约300℃至约450℃的范围内。该处理温度范围在存在稳定的接触金属化的温度范围内。

    Differentially patterned pumped optical semiconductor gain media
    75.
    发明授权
    Differentially patterned pumped optical semiconductor gain media 失效
    差分图案泵浦光学半导体增益介质

    公开(公告)号:US5793521A

    公开(公告)日:1998-08-11

    申请号:US684786

    申请日:1996-07-22

    摘要: An optical gain medium comprising, for example, an optical semiconductor device which is differentially pumped and a master oscillator power amplifier (MOPA) device employing such an amplifier. The gain medium may have a linear stripe region or a diverging stripe region that allows the light propagating therein to diverge along at least part of its length, such as a flared or tapered amplifier having a gain region that increases in width toward its output at a rate that equals or exceeds the divergence of the light. The amplifier is pumped with a current density at its input end which is smaller than the current density used to pump the output end for maintaining coherence of the beam to high power levels employing differential pumping. Differential pumping may be both longitudinal and lateral within the amplifier and may be patterned to reduce the peak modal gain observed longitudinally along and/or laterally across the pumped stripe region of the gain medium so that he experienced modal gain of the propagating light is more balanced along the length of the stripe region, i.e., rendered significantly more uniform in distribution, providing for higher diffraction limited performance without optical filamentation formation.

    摘要翻译: 一种光增益介质,包括例如差分泵浦的光半导体器件和使用这种放大器的主振荡器功率放大器(MOPA)器件。 增益介质可以具有线性条纹区域或发散条纹区域,其允许其中传播的光沿着其长度的至少一部分发散,例如具有增大区域的扩张区域或锥形放大器,该增宽区域在宽度方向上朝向其输出端 等于或超过光的分歧。 放大器在其输入端以电流密度泵送,该电流密度小于用于泵浦输出端的电流密度,以便通过差分泵浦将光束的相干保持为高功率电平。 差分泵浦可以在放大器内纵向和横向两者,并且可以被图案化以减少在增益介质的泵浦条带区域沿纵向和/或横向观察到的峰值模态增益,使得他经历了传播光的模态增益更均衡 沿着条纹区域的长度,即在分布中显着地更均匀地提供,从而提供更高的衍射限制性能,而不需要光学成丝形成。

    External cavity, continuously tunable wavelength source
    76.
    发明授权
    External cavity, continuously tunable wavelength source 失效
    外腔,连续可调波长源

    公开(公告)号:US5771252A

    公开(公告)日:1998-06-23

    申请号:US592906

    申请日:1996-01-29

    摘要: An external cavity, continuously tunable wavelength source comprising a coherent light source having an external cavity including a reflector, such as a mirror or right-angle prism, for reflecting a selected wavelength from a diffraction grating back into the coherent light source. The wavelength is selected by simultaneous rotation and translational movement of the reflector about a pivot point such that the optical path length of the external cavity is substantially identical to a numerical integer of half wavelengths at a plurality of tunable wavelengths about a central wavelength of a tunable bandwidth for the source such that cavity phase error is zero at the central wavelength and is maximally flat on either side of the center wavelength within the tunable bandwidth. The location of said pivot axis is chosen to set the cavity phase error equal to zero and its first and second derivatives substantially equal to zero at exactly one wavelength. The external cavity may be either a Littman optical cavity configuration or a Littrow external cavity configuration. The output of the coherent light source is optically coupled to a gain element for amplification.

    摘要翻译: 包括相干光源的外部腔,连续可调波长源,其具有包括诸如反射镜或直角棱镜的反射器的外部空腔,用于将所选择的波长从衍射光栅反射回相干光源。 通过反射器围绕枢转点的同时旋转和平移运动来选择波长,使得外腔的光路长度基本上与可调谐的中心波长的多个可调谐波长处的半波长的数值整数相同 带宽,使得中心波长处的腔相位误差为零,并且在可调谐带宽内的中心波长的任一侧上最大为平坦。 选择所述枢转轴线的位置以将空腔相位误差设定为零,其第一和第二导数在正好一个波长处基本上等于零。 外腔可以是Littman光腔配置或Littrow外腔配置。 相干光源的输出光耦合到用于放大的增益元件。

    Method and apparatus for detecting the presence and location of objects
in a field via scanned optical beams
    80.
    发明授权
    Method and apparatus for detecting the presence and location of objects in a field via scanned optical beams 失效
    用于通过扫描光束检测场中物体的存在和位置的方法和装置

    公开(公告)号:US5565686A

    公开(公告)日:1996-10-15

    申请号:US400088

    申请日:1995-03-07

    申请人: David F. Welch

    发明人: David F. Welch

    摘要: An optical system and method for detecting the presence and location of multiple objects in a field. The optical system has at least one light source to generate a beam, which beam is scanned by at least one first reflecting surface to generate at least three sets of beams. A first and second set of beams are overlapped across the field by at least one second reflecting surface and a third set overlaps the field without the second reflecting surface. The beam intensity is measured by at least one detection means.

    摘要翻译: 一种用于检测场中多个物体的存在和位置的光学系统和方法。 光学系统具有至少一个光源以产生光束,该光束被至少一个第一反射表面扫描以产生至少三组光束。 第一和第二组梁通过至少一个第二反射表面跨越场重叠,并且第三组在不具有第二反射表面的情况下与场重叠。 光束强度由至少一个检测装置测量。