公开(公告)号：US20170033003A1

公开(公告)日：2017-02-02

申请号：US15172908

申请日：2016-06-03

申请人： Samsung Electronics Co., Ltd.

发明人： Hyunjae SONG ,  Seunggeol NAM ,  Seongjun PARK ,  Keunwook SHIN ,  Hyeonjin SHIN ,  Jaeho LEE ,  Changseok LEE ,  Yeonchoo CHO

IPC分类号： H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L29/45

CPC分类号： H01L21/76846 ,  H01L21/28525 ,  H01L21/28568 ,  H01L23/485 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53271 ,  H01L29/45

摘要： A multilayer structure includes a first material layer, a second material layer, and a diffusion barrier layer. The second material layer is connected to the first material layer. The second material layer is spaced apart from the first material layer. The diffusion barrier layer is between the first material layer and the second material layer. The diffusion barrier layer may include a two-dimensional (2D) material. The 2D material may be a non-graphene-based material, such as a metal chalcogenide-based material having a 2D crystal structure. The first material layer may be a semiconductor or an insulator, and the second material layer may be a conductor. At least a part of the multilayer structure may constitute an interconnection for an electronic device.

摘要翻译： 多层结构包括第一材料层，第二材料层和扩散阻挡层。 第二材料层连接到第一材料层。 第二材料层与第一材料层间隔开。 扩散阻挡层在第一材料层和第二材料层之间。 扩散阻挡层可以包括二维（2D）材料。 2D材料可以是非石墨烯材料，例如具有2D晶体结构的金属硫族化物基材料。 第一材料层可以是半导体或绝缘体，第二材料层可以是导体。 多层结构的至少一部分可以构成电子设备的互连。

公开(公告)号：US20170025273A1

公开(公告)日：2017-01-26

申请号：US14984189

申请日：2015-12-30

申请人： Samsung Electronics Co., Ltd.

发明人： Keunwook SHIN ,  Minsu SEOL ,  Hyeonjin SHIN ,  Sangwon KIM ,  Seongjun PARK

IPC分类号： H01L21/033 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3215 ,  H01L21/02

CPC分类号： H01L21/0332 ,  H01L21/02118 ,  H01L21/02274

摘要： A 2D material hard mask includes hydrogen, oxygen, and a 2D material layer having a layered crystalline structure. The 2D material layer may be a material layer including one of a carbon structure (for example, a graphene sheet) and a non-carbon structure.

摘要翻译： 2D材料硬掩模包括氢，氧和具有层状晶体结构的2D材料层。 2D材料层可以是包括碳结构（例如，石墨烯片）和非碳结构之一的材料层。

公开(公告)号：US20150348794A1

公开(公告)日：2015-12-03

申请号：US14725390

申请日：2015-05-29

申请人： Samsung Electronics Co., Ltd.

发明人： Sangwon KIM ,  Hyeonjin SHIN ,  Seongjun PARK

IPC分类号： H01L21/308 ,  H01L21/02 ,  H01L21/324

CPC分类号： H01L21/3081 ,  C09D1/00 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/327 ,  G03F7/40 ,  H01L21/02115 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/324

摘要： A hardmask composition may include a solvent and a 2-dimensional carbon nanostructure containing about 0.01 atom % to about 40 atom % of oxygen or a 2-dimensional carbon nanostructure precursor thereof. A content of oxygen in the 2-dimensional carbon nanostructure precursor may be lower than about 0.01 atom % or greater than about 40 atom %. The hardmask composition may be used to form a fine pattern.

摘要翻译： 硬掩模组合物可以包括溶剂和包含约0.01原子％至约40原子％的氧的二维碳纳米结构或其二维碳纳米结构前体。 二维碳纳米结构前体中的氧含量可以低于约0.01原子％或大于约40原子％。 硬掩模组合物可用于形成精细图案。

公开(公告)号：US20150332920A1

公开(公告)日：2015-11-19

申请号：US14657306

申请日：2015-03-13

申请人： Samsung Electronics Co., Ltd.

发明人： Hyeonjin SHIN ,  Sangwoo KIM ,  Kanghyuck LEE ,  Hyejung PARK ,  Eunbi CHO

IPC分类号： H01L21/02 ,  H01L21/324 ,  H01L29/267

CPC分类号： H01L29/267 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02444 ,  H01L21/02499 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02527 ,  H01L21/02568 ,  H01L21/0259 ,  H01L21/02614 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02628 ,  H01L21/02664 ,  H01L21/324 ,  H01L29/1606 ,  H01L29/66015 ,  H01L31/028 ,  Y02E10/547

摘要： Example embodiments relate to an electronic device having a graphene-semiconductor multi-junction and a method of manufacturing the electronic device. The electronic device includes a graphene layer having at least one graphene protrusion and a semiconductor layer that covers the graphene layer. A side surface of each of the at least one graphene protrusion may be uneven, may have a multi-edge, and may be a stepped side surface. The graphene layer includes a plurality of nanocrystal graphenes. The graphene layer includes a lower graphene layer having a plurality of nanocrystal graphenes and the at least one graphene protrusion that is formed on the lower graphene layer. The semiconductor layer may include a transition metal dichalcogenide (TMDC) layer. Each of the at least one graphene protrusion may include a plurality of nanocrystal graphenes.

摘要翻译： 示例实施例涉及具有石墨烯 - 半导体多结的电子设备和制造电子设备的方法。 电子器件包括具有至少一个石墨烯突起的石墨烯层和覆盖石墨烯层的半导体层。 所述至少一个石墨烯突起中的每一个的侧表面可以是不均匀的，可以具有多边缘，并且可以是阶梯状侧表面。 石墨烯层包括多个纳米晶体石墨烯。 石墨烯层包括具有多个纳米晶体石墨烯的下部石墨烯层和形成在下部石墨烯层上的至少一个石墨烯突起。 半导体层可以包括过渡金属二硫族元素（TMDC）层。 所述至少一个石墨烯突起中的每一个可以包括多个纳米晶体石墨烯。

公开(公告)号：US20150155374A1

公开(公告)日：2015-06-04

申请号：US14528338

申请日：2014-10-30

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Kyungeun BYUN ,  Jisoo KYOUNG ,  Seongjun PARK ,  Hyeonjin SHIN ,  Hyunjae SONG ,  Jaeho LEE

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/267

CPC分类号： H01L29/66977 ,  H01L29/456 ,  H01L29/78

摘要： An electronic device includes a semiconductor layer, a tunneling layer formed of a material including a two-dimensional (2D) material so as to directly contact a certain region of the semiconductor layer, and a metal layer formed on the tunneling layer.

摘要翻译： 电子器件包括半导体层，由包括二维（2D）材料的材料形成的隧道层，以便直接接触半导体层的特定区域，以及形成在隧道层上的金属层。

公开(公告)号：US20240186183A1

公开(公告)日：2024-06-06

申请号：US18441520

申请日：2024-02-14

申请人： Samsung Electronics Co., Ltd.

发明人： Minsu SEOL ,  Minhyun LEE ,  Junyoung KWON ,  Hyeonjin SHIN ,  Minseok YOO

IPC分类号： H01L21/8234 ,  H01L21/02 ,  H01L29/06 ,  H01L29/16 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66 ,  H01L29/76 ,  H01L29/786

CPC分类号： H01L21/823412 ,  H01L21/02521 ,  H01L21/02527 ,  H01L21/02568 ,  H01L21/0259 ,  H01L21/823431 ,  H01L29/0665 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/42392 ,  H01L29/66045 ,  H01L29/66969 ,  H01L29/7606 ,  H01L29/78696

摘要： Disclosed are a field effect transistor and a method of manufacturing the same. The field effect transistor includes a source electrode on a substrate, a drain electrode separated from the source electrode, and channels connected between the source electrode and the drain electrode, gate insulating layers, and a gate electrode. The channels may have a hollow closed cross-sectional structure when viewed in a first cross-section formed by a plane across the source electrode and the drain electrode in a direction perpendicular to the substrate. The gate insulating layers may be in the channels. The gate electrode may be insulated from the source electrode and the drain electrode by the gate insulating layers.

公开(公告)号：US20230349072A1

公开(公告)日：2023-11-02

申请号：US18193058

申请日：2023-03-30

申请人： Samsung Electronics Co., Ltd. ,  UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

发明人： Taejin CHOI ,  Minsu KIM ,  Hyeonsuk SHIN ,  Hyeonjin SHIN

IPC分类号： C30B29/40 ,  H01L27/146 ,  H01L29/78 ,  C30B29/60

CPC分类号： C30B29/40 ,  H01L27/1462 ,  H01L29/7851 ,  C30B29/605

摘要： Disclosed is a nanocrystalline boron nitride film having a relatively low dielectric constant and excellent mechanical properties. The nanocrystalline boron nitride film includes a crystalline boron nitride compound, and has a dielectric constant within a range of 2.5 to 5.5 at a 100 kHz operating frequency.

公开(公告)号：US20230077783A1

公开(公告)日：2023-03-16

申请号：US18056446

申请日：2022-11-17

申请人： Samsung Electronics Co.,Ltd

发明人： Minhyun LEE ,  Minsu SEOL ,  Yeonchoo CHO ,  Hyeonjin SHIN

IPC分类号： H01L29/10 ,  H01L29/24 ,  H01L29/423

摘要： A field effect transistor includes a substrate, a source electrode and a drain electrode on the substrate and apart from each other in a first direction, a plurality of channel layers, a gate insulating film surrounding each of the plurality of channel layers, and a gate electrode surrounding the gate insulating film. Each of the plurality of channel layers has ends contacting the source electrode and the drain electrode. The plurality of channel layers are spaced apart from each other in a second direction away from the substrate. The plurality of channel layers include a 2D semiconductor material.

公开(公告)号：US20230076900A1

公开(公告)日：2023-03-09

申请号：US18055565

申请日：2022-11-15

申请人： Samsung Electronics Co., Ltd.

发明人： Minhyun LEE ,  Minsu SEOL ,  Yeonchoo CHO ,  Hyeonjin SHIN

IPC分类号： H01L29/10 ,  H01L21/02 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

摘要： Provided is a semiconductor device which use a two-dimensional semiconductor material as a channel layer. The semiconductor device includes: a gate electrode on a substrate; a gate dielectric on the gate electrode; a channel layer on the gate dielectric; and a source electrode and a drain electrode that may be electrically connected to the channel layer. The gate dielectric has a shape with a height greater than a width, and the channel layer includes a two-dimensional semiconductor material.

公开(公告)号：US20220320425A1

公开(公告)日：2022-10-06

申请号：US17836435

申请日：2022-06-09

申请人： Samsung Electronics Co., Ltd. ,  President and Fellows Of Harvard College

发明人： Minhyun LEE ,  Dovran AMANOV ,  Renjing XU ,  Houk JANG ,  Haeryong KIM ,  Hyeonjin SHIN ,  Yeonchoo CHO ,  Donhee HAM

IPC分类号： H01L45/00 ,  H01L27/24

摘要： Provided are memristors and neuromorphic devices including the memristors. A memristor includes a lower electrode and an upper electrode that are apart from each other and first and second two-dimensional material layers that are arranged between the lower electrode and the upper electrode and stacked without a chemical bond therebetween.