公开(公告)号：US11793010B2

公开(公告)日：2023-10-17

申请号：US15734635

申请日：2019-05-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Satoshi Seo ,  Koji Kusunoki ,  Kei Takahashi

IPC: G09G3/30 ,  H10K50/115 ,  G09G3/3225 ,  H10K59/121

CPC classification number: H10K50/115 ,  G09G3/3225 ,  H10K59/1213 ,  G09G2300/0842

Abstract: A display device having a high display quality is provided. A display device that can perform desired display without image data conversion is provided. The display device includes a first pixel. The first pixel includes a first light-emitting element, a color conversion layer, and a first memory circuit. The first light-emitting element exhibits blue light. The color conversion layer has a function of converting light emitted by the first light-emitting element into light having a longer wavelength. A first image signal and a first correction signal are supplied to the first pixel. The first memory circuit has a function of retaining the first correction signal and a function of adding the first correction signal to the first image signal. The first pixel has a function of displaying an image using the first image signal and the first correction signal.

公开(公告)号：US11785827B2

公开(公告)日：2023-10-10

申请号：US17521283

申请日：2021-11-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Kohei Yokoyama ,  Takaaki Nagata ,  Tatsuya Sakuishi ,  Akio Yamashita ,  Yasuhiro Jinbo ,  Hideaki Shishido ,  Tetsuji Ishitani

IPC: H10K59/50 ,  G02F1/1333 ,  G02F1/1362 ,  G02F1/1368

CPC classification number: H10K59/50 ,  G02F1/1368 ,  G02F1/133345 ,  G02F1/136286 ,  G02F2203/64

Abstract: A display device that can switch between normal display and see-through display is provided. Visibility in see-through display is improved. A liquid crystal element overlaps with a light-emitting element. The light-emitting element, a transistor, and the like overlapping with the liquid crystal element transmit visible light. When the liquid crystal element blocks external light, an image is displayed with the light-emitting element. When the liquid crystal element transmits external light, an image displayed with the light-emitting element is superimposed on a transmission image through the liquid crystal element.

公开(公告)号：US11784259B2

公开(公告)日：2023-10-10

申请号：US17697152

申请日：2022-03-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiromi Sawai ,  Ryo Tokumaru ,  Toshihiko Takeuchi ,  Tsutomu Murakawa ,  Sho Nagamatsu ,  Tomoaki Moriwaka

IPC: H01L29/00 ,  H01L27/00 ,  H01L29/786 ,  H01L29/04 ,  H01L29/06 ,  H01L29/66 ,  H10B12/00

CPC classification number: H01L29/7869 ,  H01L29/04 ,  H01L29/0665 ,  H01L29/66742 ,  H10B12/05 ,  H10B12/315

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a conductor, a first insulator in contact with a side surface of the conductor, a second insulator in contact with a top surface of the conductor and a top surface of the first insulator, and an oxide over the second insulator. The oxide includes a region that overlaps with the conductor with the second insulator interposed therebetween. The maximum height of a roughness curve (Rz) of the top surface of the conductor is 6.0 nm or smaller. The region includes crystals, and c-axes of the crystals are aligned in the normal direction of the top surface of the conductor.

公开(公告)号：US11777038B2

公开(公告)日：2023-10-03

申请号：US17458052

申请日：2021-08-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/45 ,  H01L21/465 ,  H01L27/12 ,  H01L29/10

CPC classification number: H01L29/7869 ,  H01L21/465 ,  H01L27/1225 ,  H01L29/1033 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78696

Abstract: A semiconductor device with reduced parasitic capacitance is provided. A stack is formed on an insulating layer, the stack comprising a first oxide insulating layer, an oxide semiconductor layer over the first oxide insulating layer, and a second oxide insulating layer on the oxide semiconductor layer; a gate electrode layer and a gate insulating layer are formed on the second oxide insulating layer; a first low-resistance region is formed by adding a first ion to the second oxide semiconductor layer using the gate electrode layer as a mask; a sidewall insulating layer is formed on an outer side of the gate electrode layer; a second conductive layer is formed over the gate electrode layer, the sidewall insulating layer, and the second insulating layer; and an alloyed region in the second oxide semiconductor layer is formed by performing heat treatment.

公开(公告)号：US11764074B2

公开(公告)日：2023-09-19

申请号：US17011019

申请日：2020-09-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuharu Hosaka ,  Toshimitsu Obonai ,  Junichi Koezuka ,  Yukinori Shima ,  Masahiko Hayakawa ,  Takashi Hamochi ,  Suzunosuke Hiraishi

IPC: H01L29/786 ,  H01L29/24 ,  H01L21/477 ,  H01L21/02 ,  H01L21/28

CPC classification number: H01L21/477 ,  H01L21/02112 ,  H01L21/02403 ,  H01L21/28 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78606

Abstract: To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.

公开(公告)号：US11742431B2

公开(公告)日：2023-08-29

申请号：US17501061

申请日：2021-10-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Yoshinobu Asami ,  Takahisa Ishiyama ,  Motomu Kurata ,  Ryo Tokumaru ,  Noritaka Ishihara ,  Yusuke Nonaka

IPC: H01L29/786 ,  H01L29/22 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/22 ,  H01L29/66969

Abstract: A semiconductor device with favorable reliability is provided.
The semiconductor device includes a first insulator; a second insulator positioned over the first insulator; an oxide positioned over the second insulator; a first conductor and a second conductor positioned apart from each other over the oxide; a third insulator positioned over the oxide, the first conductor, and the second conductor; a third conductor positioned over the third insulator and at least partly overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned to cover the oxide, the first conductor, the second conductor, the third insulator, and the third conductor; a fifth insulator positioned over the fourth insulator; and a sixth insulator positioned over the fifth insulator. An opening reaching the second insulator is formed in at least part of the fourth insulator; the fifth insulator is in contact with the second insulator through the opening; and the first insulator, the fourth insulator, and the sixth insulator have a lower oxygen permeability than the second insulator.

公开(公告)号：US11729960B2

公开(公告)日：2023-08-15

申请号：US17503651

申请日：2021-10-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hajime Kimura ,  Takayuki Ikeda ,  Kiyoshi Kato ,  Yuta Endo ,  Junpei Sugao

IPC: H10B12/00 ,  G11C5/02 ,  G11C11/403 ,  G11C11/409 ,  H01L29/24

CPC classification number: H10B12/00 ,  G11C5/02 ,  G11C11/403 ,  G11C11/409 ,  H01L29/24

Abstract: A semiconductor device with a large storage capacity per unit area is provided. A semiconductor device includes a memory cell. The memory cell includes a first conductor; a first insulator over the first conductor; a first oxide over the first insulator and including a first region, a second region, and a third region positioned between the first region and the second region; a second insulator over the first oxide; a second conductor over the second insulator; a third insulator positioned in contact with a side surface of the first region; and a second oxide positioned on the side surface of the first region, with the third insulator therebetween. The first region includes a region overlapping the first conductor. The third region includes a region overlapped by the second conductor. The first region and the second region have a lower resistance than the third region.

公开(公告)号：US11728437B2

公开(公告)日：2023-08-15

申请号：US17741698

申请日：2022-05-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L29/66 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

Abstract: A semiconductor device includes an oxide semiconductor layer including a crystalline region over an insulating surface, a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode layer over the gate insulating layer in a region overlapping with the crystalline region. The crystalline region includes a crystal whose c-axis is aligned in a direction substantially perpendicular to a surface of the oxide semiconductor layer.

公开(公告)号：US11726373B2

公开(公告)日：2023-08-15

申请号：US17972144

申请日：2022-10-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Kimura ,  Shunpei Yamazaki

IPC: G02F1/1345 ,  G09G3/20 ,  H05K1/11 ,  H05K3/36 ,  G02F1/133 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1368 ,  H01L27/12 ,  H05K1/14 ,  H05K1/02 ,  G09G3/36

CPC classification number: G02F1/13452 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1368 ,  G02F1/13306 ,  G02F1/13394 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/133514 ,  G09G3/20 ,  G09G3/2092 ,  H01L27/1222 ,  H05K1/117 ,  H05K1/148 ,  H05K3/361 ,  G09G3/3614 ,  G09G2300/0408 ,  G09G2300/0426 ,  G09G2300/0439 ,  G09G2300/08 ,  G09G2310/0264 ,  G09G2320/043 ,  G09G2330/021 ,  G09G2330/08 ,  H01L2924/0002 ,  H05K1/0263 ,  H05K1/0265 ,  H05K2201/094 ,  H05K2201/09727 ,  H05K2201/10136 ,  H05K2201/10166 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

公开(公告)号：US11723253B2

公开(公告)日：2023-08-08

申请号：US17225227

申请日：2021-04-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yoshiharu Hirakata ,  Tomoya Aoyama ,  Akihiro Chida

IPC: H01L27/12 ,  H01L27/15 ,  H01L27/14 ,  H01L51/00 ,  H01L51/50 ,  H01L51/52 ,  H10K59/40 ,  H10K50/11 ,  H10K50/84 ,  H10K50/844 ,  H10K59/131 ,  H10K71/80 ,  H10K77/10 ,  G06F3/041 ,  H04B1/3888 ,  H04M1/02 ,  H01L27/146 ,  H10K59/60 ,  H10K59/126 ,  H10K59/12 ,  H10K102/00

CPC classification number: H10K59/40 ,  G06F3/0412 ,  H04B1/3888 ,  H04M1/0266 ,  H10K50/11 ,  H10K50/84 ,  H10K50/841 ,  H10K50/844 ,  H10K59/131 ,  H10K71/80 ,  H10K77/111 ,  G06F2203/04103 ,  G09G2380/02 ,  H01L27/14678 ,  H10K59/1201 ,  H10K59/126 ,  H10K59/60 ,  H10K2102/311 ,  Y02E10/549

Abstract: A light-emitting device or a display device that is less likely to be broken is provided. Provided is a light-emitting device including an element layer and a substrate over the element layer. At least a part of the substrate is bent to the element layer side. The substrate has a light-transmitting property and a refractive index that is higher than that of the air. The element layer includes a light-emitting element that emits light toward the substrate side. Alternatively, provided is a light-emitting device including an element layer and a substrate covering a top surface and at least one side surface of the element layer. The substrate has a light-transmitting property and a refractive index that is higher than that of the air. The element layer includes a light-emitting element that emits light toward the substrate side.