公开(公告)号：US20130043514A1

公开(公告)日：2013-02-21

申请号：US13214157

申请日：2011-08-19

申请人： Alfred Grill ,  Thomas J. Haigh, JR. ,  Kelly Malone ,  Son V. Nguyen ,  Vishnubhai V. Patel ,  Hosadurga Shobha

发明人： Alfred Grill ,  Thomas J. Haigh, JR. ,  Kelly Malone ,  Son V. Nguyen ,  Vishnubhai V. Patel ,  Hosadurga Shobha

IPC分类号： H01L29/78 ,  H01L23/48 ,  C08J9/26 ,  H01L21/31

CPC分类号： H01L29/511 ,  C08J9/26 ,  C08J2201/042 ,  C08J2383/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L23/5329 ,  H01L29/515 ,  H01L2924/0002 ,  H01L2924/00

摘要： A multiphase ultra low k dielectric process incorporating an organo-silicon precursor including an organic porogen, high frequency radio frequency power just above plasma initiation in a PECVD chamber and energy post treatment. A porous SiCOH dielectric material having a k less than 2.7 and a modulus of elasticity greater than 7 GPa. A graded carbon adhesion layer of SiO2 and porous SiCOH.

摘要翻译： 包含有机硅前驱体的多相超低k电介质工艺，其包括有机致孔剂，在PECVD腔室中等离子体起始之前的高频射频功率和能量后处理。 具有k小于2.7且弹性模量大于7GPa的多孔SiCOH电介质材料。 SiO2和多孔SiCOH的分级碳粘附层。

公开(公告)号：US08362596B2

公开(公告)日：2013-01-29

申请号：US12502690

申请日：2009-07-14

申请人： Stephan A. Cohen ,  Alfred Grill ,  Thomas J. Haigh, Jr. ,  Xiao H. Liu ,  Son V. Nguyen ,  Thomas M. Shaw ,  Hosadurga Shobha

发明人： Stephan A. Cohen ,  Alfred Grill ,  Thomas J. Haigh, Jr. ,  Xiao H. Liu ,  Son V. Nguyen ,  Thomas M. Shaw ,  Hosadurga Shobha

IPC分类号： H01L23/58 ,  H01L21/302

CPC分类号： H01L23/5329 ,  H01L21/76825 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A dielectric capping layer having a dielectric constant of less than 4.2 is provided that exhibits a higher mechanical and electrical stability to UV and/or E-Beam radiation as compared to conventional dielectric capping layers. Also, the dielectric capping layer maintains a consistent compressive stress upon post-deposition treatments. The dielectric capping layer includes a tri-layered dielectric material in which at least one of the layers has good oxidation resistance, is resistance to conductive metal diffusion, and exhibits high mechanical stability under at least UV curing. The low k dielectric capping layer also includes nitrogen content layers that contain electron donors and double bond electrons. The low k dielectric capping layer also exhibits a high compressive stress and high modulus and is stable under post-deposition curing treatments, which leads to less film and device cracking and improved device reliability.

摘要翻译： 提供具有小于4.2的介电常数的介电覆盖层，与传统的介电覆盖层相比，其对UV和/或E-Beam辐射具有更高的机械和电学稳定性。 此外，介电覆盖层在沉积后处理时保持一致的压应力。 电介质覆盖层包括三层介电材料，其中至少一层具有良好的抗氧化性，耐导电性金属扩散，并且在至少UV固化下表现出高机械稳定性。 低k电介质封盖层还包括含有电子给体和双键电子的氮含量层。 低k电介质覆盖层还具有高压缩应力和高模量，并且在后沉积固化处理中是稳定的，这导致较少的膜和器件开裂和改进的器件可靠性。

公开(公告)号：US08361853B2

公开(公告)日：2013-01-29

申请号：US12902620

申请日：2010-10-12

申请人： Guy Cohen ,  Christos D. Dimitrakopoulos ,  Alfred Grill ,  Robert L. Wisnieff

发明人： Guy Cohen ,  Christos D. Dimitrakopoulos ,  Alfred Grill ,  Robert L. Wisnieff

IPC分类号： H01L29/06 ,  H01L21/336

CPC分类号： H01L29/775 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/1606 ,  H01L29/66439 ,  H01L29/78684

摘要： The present disclosure provides a semiconductor structure including a nanoribbon-containing layer of alternating graphene nanoribbons separated by alternating insulating ribbons. The alternating graphene nanoribbons are parallel to a surface of an underlying substrate and, in some embodiments, might be oriented along crystallographic directions of the substrate. The alternating insulating ribbons may comprise hydrogenated graphene, i.e., graphane, fluorinated graphene, or fluorographene. The semiconductor structure mentioned above can be formed by selectively converting portions of an initial graphene layer into alternating insulating ribbons, while the non-converted portions of the initial graphene form the alternating graphene nanoribbons. Semiconductor devices such as, for example, field effect transistors, can be formed atop the semiconductor structure provided in the present disclosure.

摘要翻译： 本公开提供了一种半导体结构，其包括由交替的绝缘带分开的交替的石墨烯纳米带的纳米带层。 交替的石墨烯纳米带平行于下面的基底的表面，并且在一些实施方案中可以沿着基底的结晶方向取向。 交替的绝缘带可以包括氢化石墨烯，即塔帕尼，氟化石墨烯或荧光荧光物质。 上述半导体结构可以通过将初始石墨烯层的部分选择性地转换为交替绝缘带而形成，而初始石墨烯的未转化部分形成交替的石墨烯纳米带。 诸如场效应晶体管的半导体器件可以形成在本公开中提供的半导体结构的顶部。

公开(公告)号：US20120329287A1

公开(公告)日：2012-12-27

申请号：US13603008

申请日：2012-09-04

申请人： Stephen M. Gates ,  Alfred Grill ,  Son Nguyen ,  Satyanarayana V. Nitta ,  Thomas M. Shaw

发明人： Stephen M. Gates ,  Alfred Grill ,  Son Nguyen ,  Satyanarayana V. Nitta ,  Thomas M. Shaw

IPC分类号： H01L21/312

CPC分类号： H01L23/5329 ,  C23C16/401 ,  C23C16/505 ,  C23C16/511 ,  C23C16/56 ,  H01J2237/336 ,  H01J2237/338 ,  H01J2237/3382 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02345 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A porous SiCOH dielectric film in which the stress change caused by increased tetrahedral strain is minimized by post treatment in unsaturated Hydrocarbon ambient. The p-SiCOH dielectric film has more —(CHx) and less Si—O—H and Si—H bonding moieties. Moreover, a stable pSiOCH dielectric film is provided in which the amount of Si—OH (silanol) and Si—H groups at least within the pores has been reduced by about 90% or less by the post treatment. A p-SiCOH dielectric film is produced that is flexible since the pores include stabilized crosslinking —(CHx)— chains wherein x is 1, 2 or 3 therein. The dielectric film is produced utilizing an annealing step subsequent deposition that includes a gaseous ambient that includes at least one C—C double bond and/or at least one C—C triple bond.

摘要翻译： 通过在不饱和烃环境中后处理，使四面体应变增加引起的应力变化最小化的多孔SiCOH介电膜。 p-SiCOH电介质膜具有更多的（（CH x））和更少的Si-O-H和Si-H键合部分。 此外，提供稳定的pSiOCH电介质膜，其中至少在孔内的Si-OH（硅烷醇）和Si-H基团的量通过后处理减少约90％以下。 由于气孔包括其中x为1,2或3的稳定的交联 - （CH x） - 链，因此制备柔性的p-SiCOH介电膜。 介电膜是利用包括至少一个C-C双键和/或至少一个C-C三键的气态环境的退火步骤进行的。

公开(公告)号：US20120329269A1

公开(公告)日：2012-12-27

申请号：US13602119

申请日：2012-09-01

申请人： John C. Arnold ,  Griselda Bonilla ,  William J. Cote ,  Geraud Dubois ,  Daniel C. Edelstein ,  Alfred Grill ,  Elbert Huang ,  Robert D. Miller ,  Satya V. Nitta ,  Sampath Purushothaman ,  E. Todd Ryan ,  Muthumanickam Sankarapandian ,  Terry A. Spooner ,  Willi Volksen

发明人： John C. Arnold ,  Griselda Bonilla ,  William J. Cote ,  Geraud Dubois ,  Daniel C. Edelstein ,  Alfred Grill ,  Elbert Huang ,  Robert D. Miller ,  Satya V. Nitta ,  Sampath Purushothaman ,  E. Todd Ryan ,  Muthumanickam Sankarapandian ,  Terry A. Spooner ,  Willi Volksen

IPC分类号： H01L21/768

CPC分类号： H01L21/76808 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/31633 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

摘要： Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.

摘要翻译： 提供了最小化或消除对低k和超低k有机硅酸盐金属间电介质层的等离子体损伤的方法。 等离子体损伤的降低通过在合适的点处中断蚀刻和剥离工艺流程来实现，以增加本发明的处理，其保护金属间电介质层免受等离子体条带处理期间的等离子体损伤。 以这种方式减少或消除等离子体损伤区域还能够减少光致抗蚀剂中的线图案和由其形成的金属线之间的线偏压，并且由于在反应性之后的湿清洁而改变线沟槽的线宽 用于形成线沟槽和通孔腔的离子蚀刻。 减少的线偏压对金属互连结构的电产量具有有益的影响。

公开(公告)号：US08212337B2

公开(公告)日：2012-07-03

申请号：US11972175

申请日：2008-01-10

申请人： Alfred Grill ,  Joshua L. Herman ,  Son Nguyen ,  E. Todd Ryan ,  Hosadurga K. Shobha

发明人： Alfred Grill ,  Joshua L. Herman ,  Son Nguyen ,  E. Todd Ryan ,  Hosadurga K. Shobha

IPC分类号： H01L23/58 ,  H01L23/48

CPC分类号： H01L21/02263 ,  C23C16/325 ,  C23C16/56 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834

摘要： A carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. In some embodiments, the dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen. The carbon-rich silicon carbide-like dielectric film can be used as a dielectric cap layer in an interconnect structure. The inventive dielectric film is highly robust to UV curing and remains compressively stressed after UV curing. Moreover, the inventive dielectric film has good oxidation resistance and prevents metal diffusion into an interconnect dielectric layer. The present invention also provides an interconnect structure including the inventive dielectric film as a dielectric cap. A method of fabricating the inventive dielectric film is also provided.

摘要翻译： 提供碳浓度大于或等于约30原子％C并且介电常数小于或等于约4.5的富含碳的碳化硅状电介质膜。 在一些实施例中，电介质膜可以任选地包括氮。 当存在氮时，富含碳的碳化硅状电介质膜具有小于或等于约5原子％氮的浓度氮。 富碳碳化硅状电介质膜可以用作互连结构中的电介质盖层。 本发明的电介质膜对UV固化具有很强的鲁棒性，并且在UV固化后保持压缩应力。 此外，本发明的电介质膜具有良好的抗氧化性，并且防止金属扩散到互连电介质层中。 本发明还提供一种互连结构，其包括作为电介质盖的本发明的电介质膜。 还提供了制造本发明的电介质膜的方法。

公开(公告)号：US20120156857A1

公开(公告)日：2012-06-21

申请号：US13405598

申请日：2012-02-27

申请人： Guy Cohen ,  Christos D. Dimitrakopoulos ,  Alfred Grill

发明人： Guy Cohen ,  Christos D. Dimitrakopoulos ,  Alfred Grill

IPC分类号： H01L21/28 ,  H01L21/30

CPC分类号： H01L29/7848 ,  B82Y10/00 ,  H01L21/28518 ,  H01L21/76885 ,  H01L23/481 ,  H01L29/665 ,  H01L29/78 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of forming a semiconductor structure including a semiconductor nanowire or epitaxial semiconductor material which extends from at least a surface of source region and the drain region are provided. The methods include converting an upper portion of the source region and the drain region and the semiconductor nanowire or epitaxial semiconductor material into a continuous metal semiconductor alloy. The continuous metal semiconductor alloy includes a lower portion that is contained within an upper surface of each of the source region and the drain region, and a vertical pillar portion extending upwardly from the lower portion.

摘要翻译： 提供形成半导体结构的方法，该半导体结构包括从源极区域和漏极区域的至少一个表面延伸的半导体纳米线或外延半导体材料。 所述方法包括将源极区域和漏极区域以及半导体纳米线或外延半导体材料的上部转换为连续金属半导体合金。 连续金属半导体合金包括包含在源极区域和漏极区域中的每一个的上表面内的下部以及从下部向上延伸的垂直柱部分。

公开(公告)号：US08101150B2

公开(公告)日：2012-01-24

申请号：US12483757

申请日：2009-06-12

申请人： Alfred Grill ,  Deborah Neumayer ,  Dinkar Singh

发明人： Alfred Grill ,  Deborah Neumayer ,  Dinkar Singh

IPC分类号： D01C5/00

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/36 ,  C30B25/00 ,  C30B25/105 ,  C30B29/605 ,  H01J9/025 ,  H01J2201/30469 ,  Y10S977/843

摘要： The diameter of carbon nanotubes grown by chemical vapor deposition is controlled independent of the catalyst size by controlling the residence time of reactive gases in the reactor.

摘要翻译： 通过化学气相沉积生长的碳纳米管的直径通过控制反应性气体在反应器中的停留时间独立于催化剂的尺寸来控制。

公开(公告)号：US20090278114A1

公开(公告)日：2009-11-12

申请号：US12483757

申请日：2009-06-12

申请人： Alfred Grill ,  Deborah Neumayer ,  Dinkar Singh

发明人： Alfred Grill ,  Deborah Neumayer ,  Dinkar Singh

IPC分类号： H01L29/66 ,  C23C16/00 ,  C23C16/50 ,  C01B31/02 ,  C40B40/18 ,  H01L21/335 ,  B82B1/00 ,  B82B3/00

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/36 ,  C30B25/00 ,  C30B25/105 ,  C30B29/605 ,  H01J9/025 ,  H01J2201/30469 ,  Y10S977/843

摘要： The diameter of carbon nanotubes grown by chemical vapor deposition is controlled independent of the catalyst size by controlling the residence time of reactive gases in the reactor.

摘要翻译： 通过化学气相沉积生长的碳纳米管的直径通过控制反应性气体在反应器中的停留时间独立于催化剂尺寸来控制。

公开(公告)号：US20090181178A1

公开(公告)日：2009-07-16

申请号：US12355316

申请日：2009-01-16

申请人： Daniel C. Edelstein ,  Stephen M. Gates ,  Alfred Grill ,  Michael Lane ,  Qinghuang Lin ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Van Nguyen

发明人： Daniel C. Edelstein ,  Stephen M. Gates ,  Alfred Grill ,  Michael Lane ,  Qinghuang Lin ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Van Nguyen

IPC分类号： C23C16/22

CPC分类号： H01L31/103 ,  Y10T428/31663

摘要： A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC═CH, C═CH2, C═C or a [S]n linkage, where n is a defined above.

摘要翻译： 提供了一种用于包括互连和感测结构的电子结构中具有增强的内聚强度的低k电介质材料，其包括其中一部分C原子键合为Si-CH 3官能团的Si，C，O和H的原子 ，另一部分C原子键合为Si-R-Si，其中R为苯基， - [CH2] n-，其中n大于或等于1，HC-CH，C-CH2，CC或[ S] n连接，其中n是上面定义的。