公开(公告)号：US10784105B2

公开(公告)日：2020-09-22

申请号：US16702915

申请日：2019-12-04

申请人： ASM International N.V.

发明人： Noboru Takamure ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Antti Niskanen ,  Suvi Haukka ,  Ryu Nakano ,  Kunitoshi Namba

IPC分类号： H01L21/02 ,  H01L29/66 ,  H01L21/22 ,  H01L21/225 ,  H01L21/324

摘要： The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

公开(公告)号：US10707082B2

公开(公告)日：2020-07-07

申请号：US13525072

申请日：2012-06-15

申请人： Suvi Haukka ,  Viljami J. Pore ,  Antti Niskanen

发明人： Suvi Haukka ,  Viljami J. Pore ,  Antti Niskanen

IPC分类号： H01L21/205 ,  H01L21/02 ,  C23C16/30 ,  C23C16/455 ,  C30B25/14 ,  C30B29/40

摘要： Atomic layer deposition (ALD) processes for forming thin films comprising InN are provided. The thin films may find use, for example, in light-emitting diodes.

公开(公告)号：US10510530B2

公开(公告)日：2019-12-17

申请号：US16192494

申请日：2018-11-15

申请人： ASM International N.V.

发明人： Noboru Takamure ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Antti Niskanen ,  Suvi Haukka ,  Ryu Nakano ,  Kunitoshi Namba

IPC分类号： H01L21/02 ,  H01L21/22 ,  H01L21/225 ,  H01L21/324 ,  H01L29/66

摘要： The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

公开(公告)号：US10297444B2

公开(公告)日：2019-05-21

申请号：US15824143

申请日：2017-11-28

申请人： ASM International N.V.

发明人： Antti Rahtu ,  Eva Tois ,  Kai-Erik Elers ,  Wei-Min Li

IPC分类号： C23C16/26 ,  H01L21/02 ,  C23C16/32 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L21/3205 ,  H01L21/312

摘要： Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.

公开(公告)号：US10056249B2

公开(公告)日：2018-08-21

申请号：US15358802

申请日：2016-11-22

申请人： ASM International N.V.

发明人： Raija H. Matero ,  Linda Lindroos ,  Hessel Sprey ,  Jan Willem Maes ,  David de Roest ,  Dieter Pierreux ,  Kees van der Jeugd ,  Lucia D'Urzo ,  Tom E. Blomberg

IPC分类号： H01L21/302 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/28 ,  H01L29/51 ,  H01L21/22 ,  C23F1/26

CPC分类号： H01L21/0228 ,  C23F1/26 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/2225 ,  H01L21/28194 ,  H01L21/31111 ,  H01L21/31122 ,  H01L29/513 ,  H01L29/517

摘要： Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.

公开(公告)号：US09564314B2

公开(公告)日：2017-02-07

申请号：US14846177

申请日：2015-09-04

申请人： ASM International N.V.

发明人： Noboru Takamure ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Antti Niskanen ,  Suvi Haukka ,  Ryu Nakano ,  Kunitoshi Namba

IPC分类号： H01L21/31 ,  H01L21/02 ,  H01L21/22 ,  H01L21/225 ,  H01L21/324

CPC分类号： H01L21/02321 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02208 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/2225 ,  H01L21/2255 ,  H01L21/324 ,  H01L29/66803

摘要： The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

摘要翻译： 本公开涉及通过原子层沉积工艺沉积诸如掺杂氧化硅膜的掺杂剂膜。 在一些实施例中，反应空间中的衬底与硅前体和掺杂剂前体的脉冲接触，使得硅前体和掺杂剂前体吸附在衬底表面上。 氧等离子体用于将吸附的硅前体和掺杂剂前体转化为掺杂的氧化硅。

公开(公告)号：US09514956B2

公开(公告)日：2016-12-06

申请号：US12917307

申请日：2010-11-01

申请人： Eva Tois ,  Suvi Haukka ,  Marko Tuominen

发明人： Eva Tois ,  Suvi Haukka ,  Marko Tuominen

IPC分类号： C30B25/02 ,  H01L21/316 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  C30B29/16

CPC分类号： H01L21/02156 ,  C23C16/401 ,  C23C16/402 ,  C23C16/44 ,  C23C16/45531 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02145 ,  H01L21/02148 ,  H01L21/0215 ,  H01L21/02153 ,  H01L21/02159 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/0228 ,  H01L21/31612

摘要： Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporisable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporised, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO2, with sufficiently short reaction times.

摘要翻译： 通过ALCVD法在生长衬底上生产含氧化硅的薄膜的方法。 在该方法中，将可蒸发的硅化合物结合到生长衬底上，并将键合的硅化合物转化为二氧化硅。 本发明包括使用含有至少一种有机配体的硅化合物，并且通过使键合的硅化合物与气化的活性氧源（特别是与臭氧）接触将其转化为二氧化硅。 本发明提供了一种用于生长控制含有SiO 2的薄膜的控制方法，反应时间足够短。

公开(公告)号：US09127351B2

公开(公告)日：2015-09-08

申请号：US13766469

申请日：2013-02-13

申请人： ASM International N.V.

发明人： Antti Rahtu ,  Eva Tois ,  Kai-Erik Elers ,  Wei-Min Li

IPC分类号： C23C16/32 ,  H01L21/28 ,  H01L21/285 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  C23C16/455 ,  H01L21/312

CPC分类号： H01L21/0228 ,  C23C16/32 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/45553 ,  H01L21/02205 ,  H01L21/28088 ,  H01L21/285 ,  H01L21/28562 ,  H01L21/312 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/3205 ,  H01L21/32055 ,  H01L21/32056 ,  H01L21/76843

摘要： Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.

公开(公告)号：US08993055B2

公开(公告)日：2015-03-31

申请号：US11588837

申请日：2006-10-27

申请人： Antti Rahtu ,  Eva Tois ,  Kai-Erik Elers ,  Wei-Min Li

发明人： Antti Rahtu ,  Eva Tois ,  Kai-Erik Elers ,  Wei-Min Li

IPC分类号： C23C16/32 ,  C23C16/08 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L21/312

CPC分类号： H01L21/0228 ,  C23C16/32 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/45553 ,  H01L21/02205 ,  H01L21/28088 ,  H01L21/285 ,  H01L21/28562 ,  H01L21/312 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/3205 ,  H01L21/32055 ,  H01L21/32056 ,  H01L21/76843

摘要： Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.

摘要翻译： 提供了通过原子层沉积（ALD）在基板上制造具有低杂质含量的含金属薄膜的方法。 所述方法优选包括使基板与金属源化学品，第二源化学品和沉积增强剂的交替和顺序脉冲接触。 沉积增强剂优选选自烃，氢，氢等离子体，氢原子，硅烷，锗化合物，氮化合物和硼化合物。 在一些实施方案中，沉积增强剂与生长薄膜中的卤化物污染物反应，改善膜性质。

公开(公告)号：US08927403B2

公开(公告)日：2015-01-06

申请号：US13188087

申请日：2011-07-21

申请人： Hannu Huotari ,  Marko Tuominen ,  Miika Leinikka

发明人： Hannu Huotari ,  Marko Tuominen ,  Miika Leinikka

IPC分类号： H01L21/20 ,  H01L21/28 ,  H01L29/66 ,  H01L29/51

CPC分类号： C23C16/45525 ,  C23C16/32 ,  C23C16/34 ,  C23C16/38 ,  C23C16/40 ,  H01L21/28079 ,  H01L29/517 ,  H01L29/66583

摘要： Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD) processes are used to deposit a noble metal containing thin film on a high-k material, metal, metal nitride or other conductive metal compound while avoiding deposition on a lower k insulator such as silicon oxide. The ability to deposit on a first surface, such as a high-k material, while avoiding deposition on a second surface, such as a silicon oxide or silicon nitride surface, may be utilized, for example, in the formation of a gate electrode.

摘要翻译： 提供了用于通过气相沉积工艺在衬底上选择性地沉积包括一种或多种贵金属的薄膜的工艺。 在一些实施例中，原子层沉积（ALD）工艺用于在高k材料，金属，金属氮化物或其它导电金属化合物上沉积含有贵金属的薄膜，同时避免沉积在诸如氧化硅的下部k绝缘体上。 例如在栅电极的形成中，可以使用在第一表面上沉积的能力，例如高k材料，同时避免沉积在第二表面上，例如氧化硅或氮化硅表面。