公开(公告)号：US08821827B2

公开(公告)日：2014-09-02

申请号：US12609414

申请日：2009-10-30

Applicant: Hee Young Kim ,  Kyung Koo Yoon ,  Yong Ki Park ,  Won Choon Choi

Inventor： Hee Young Kim ,  Kyung Koo Yoon ,  Yong Ki Park ,  Won Choon Choi

IPC: C01B33/021 ,  B01J8/24

CPC classification number: C01B33/027 ,  C23C16/24 ,  C23C16/4401 ,  C23C16/442

Abstract: An apparatus for preparing granular polysilicon comprises a reactor tube, a reactor shell, an internal heater, and components for controlling pressure, supplying a fluidizing gas and a reaction gas, discharging gas, and discharging particles. The reactor tube is associated with an inner space comprising an inner zone that contains a bed of silicon particles and is the site at which silicon deposition occurs. The inner zone comprises a heating zone and a reaction zone. The fluidizing gas supplying component supplies a fluidizing gas for fluidizing the bed of silicon particles to a bottom of the heating zone. The apparatus can minimize the problems occurring during the heating of silicon particles at high temperature for silicon deposition on the surface of the silicon particles.

Abstract translation: 制备颗粒状多晶硅的装置包括反应器管，反应器壳，内部加热器和用于控制压力的部件，供应流化气体和反应气体，排出气体和排出颗粒。 反应器管与包含含有硅颗粒床的内部区域的内部空间相关联，并且是发生硅沉积的位置。 内部区域包括加热区域和反应区域。 流化气体供应部件提供用于使硅颗粒床流化到加热区的底部的流化气体。 该装置可以最大限度地减少硅粒子在高温下加热硅沉积在硅颗粒表面上的问题。

公开(公告)号：US08821637B2

公开(公告)日：2014-09-02

申请号：US12021825

申请日：2008-01-29

Applicant: Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

Inventor： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

IPC: C23C16/455 ,  C23C16/00

CPC classification number: C23C16/14 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/45512 ,  C23C16/45523

Abstract: Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes.

Abstract translation: 本发明的实施例提供了用于气相沉积含钨材料如金属钨和氮化钨的装置。 在一个实施例中，提供了一种处理室，其包括盖子组件，该盖子组件包含盖板，喷头，混合腔，分配腔和容纳在盖板内的电阻加热元件。 在一个示例中，电阻加热元件被配置成将盖板设置在约120℃至约180℃，优选约140℃至约160℃的温度范围内，更多 优选约145℃至约155℃。混合腔可与含有六氟化钨的钨前体源和含氨的氮前体源流体连通。 在一些实施例中，单个处理室可用于通过CVD工艺沉积金属钨和氮化钨材料。

公开(公告)号：US08815014B2

公开(公告)日：2014-08-26

申请号：US13024328

申请日：2011-02-10

Applicant: Jacques Faguet ,  Masahide Iwasaki ,  Toshihisa Nozawa

Inventor： Jacques Faguet ,  Masahide Iwasaki ,  Toshihisa Nozawa

IPC: C23C16/00 ,  C23F1/00

CPC classification number: C23C16/45502 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/5096 ,  C23C16/511 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32623 ,  H05H2245/123

Abstract: A method and system for plasma-assisted thin film vapor deposition on a substrate is described. The system includes a process chamber including a first process space having a first volume, a substrate stage coupled to the process chamber and configured to support a substrate and expose the substrate to the first process space, a plasma generation system coupled to the process chamber and configured to generate plasma in at least a portion of the first process space, and a vacuum pumping system coupled to the process chamber and configured to evacuate at least a portion of the first process space. The system further includes a process volume adjustment mechanism coupled to the process chamber and configured to create a second process space that includes at least a part of the first process space and that has a second volume less than the first volume, the substrate being exposed to the second process space.

Abstract translation: 描述了在衬底上等离子体辅助薄膜气相沉积的方法和系统。 该系统包括处理室，该处理室包括具有第一体积的第一处理空间，耦合到处理室的衬底台，并被配置为支撑衬底并将衬底暴露于第一处理空间;耦合到处理室的等离子体产生系统，以及 被配置为在所述第一处理空间的至少一部分中产生等离子体，以及耦合到所述处理室并被配置为抽空所述第一处理空间的至少一部分的真空泵送系统。 所述系统还包括处理容积调节机构，其耦合到所述处理室并且被配置为创建包括所述第一处理空间的至少一部分并且具有小于所述第一体积的第二容积的第二处理空间，所述衬底暴露于 第二个处理空间。

公开(公告)号：US20140174355A1

公开(公告)日：2014-06-26

申请号：US14107005

申请日：2013-12-16

Applicant: CANON ANELVA CORPORATION

Inventor： Hiroshi YAKUSHIJI ,  Masahiro SHIBAMOTO ,  Kazuto YAMANAKA ,  Shogo HIRAMATSU ,  Susumu KARINO

IPC: C23C16/50

CPC classification number: C23C14/568 ,  C23C16/26 ,  C23C16/4401 ,  C23C16/509 ,  G11B5/85

Abstract: In one embodiment of the invention, a protective film formation chamber for forming a carbon protective film on a magnetic film includes: a gas introduction part which introduces a source gas to a vacuum vessel; a discharge electrode having a discharge surface at a position facing a substrate conveyed to a predetermined position in the vacuum vessel; a plasma formation part which applies voltage between the discharge surface and the substrate conveyed to the predetermined position; a permanent magnet being provided on a back side of the discharge surface and having a first magnet and a second magnet provided such that their magnetic poles facing the discharge surface are opposite to each other; and a no-erosion-portion mask being provided in parallel to the discharge surface and covering an area of the discharge surface surrounding a portion facing the permanent magnet.

Abstract translation: 在本发明的一个实施例中，用于在磁性膜上形成碳保护膜的保护膜形成室包括：将源气体引入真空容器的气体导入部; 放电电极，其在与被输送到所述真空容器中的预定位置的衬底相对的位置处具有放电表面; 等离子体形成部，其在所述放电面与被输送到所述规定位置的所述基板之间施加电压; 永磁体设置在排出表面的背面，并且具有第一磁体和第二磁体，第一磁体和第二磁体设置成使得它们的面对排出表面的磁极彼此相反; 以及与排放表面平行地设置并覆盖围绕面对永磁体的部分的排出表面的区域的无腐蚀部分掩模。

公开(公告)号：US08673389B2

公开(公告)日：2014-03-18

申请号：US13392237

申请日：2010-09-02

Applicant: Markku Rajala ,  Juha Tikkanen

Inventor： Markku Rajala ,  Juha Tikkanen

IPC: C23C16/00

CPC classification number: C23C4/00 ,  C03C17/002 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4486 ,  C23C16/45544

Abstract: A method and apparatus for controlling a vapor deposition based coating process, including monitoring ultrafine particles, and adjusting at least one process parameter based on the monitoring. During at least one stage of the coating deposition process, at least one of the coating precursors includes a gas, a vapor, or an aerosol.

Abstract translation: 一种用于控制基于气相沉积的涂覆方法的方法和装置，包括监测超细颗粒，以及基于监测调整至少一个工艺参数。 在涂层沉积工艺的至少一个阶段期间，涂层前体中的至少一个包括气体，蒸汽或气溶胶。

公开(公告)号：US20140044887A1

公开(公告)日：2014-02-13

申请号：US13982272

申请日：2012-01-30

Applicant: Adrianus Johannes Petrus Maria Vermeer

Inventor： Adrianus Johannes Petrus Maria Vermeer

IPC: B05D1/42

CPC classification number: B05D1/42 ,  C23C16/4401 ,  C23C16/45551 ,  C23C16/4583 ,  C23C16/54

Abstract: Apparatus for atomic layer deposition on a surface of a sheeted substrate, comprising: an injector head comprising a deposition space provided with a precursor supply and a precursor drain; said supply and drain arranged for providing a precursor gas flow from the precursor supply via the deposition space to the precursor drain; the deposition space in use being bounded by the injector head and the substrate surface; a gas bearing comprising a bearing gas injector, arranged for injecting a bearing gas between the injector head and the substrate surface, the bearing gas thus forming a gas-bearing; a conveying system providing relative movement of the substrate and the injector head along a plane of the substrate to form a conveying plane along which the substrate is conveyed. A support part arranged opposite the injector head, the support part constructed to provide a gas bearing pressure arrangement that balances the injector head gas-bearing in the conveying plane, so that the substrate is held supportless by said gas bearing pressure arrangement in between the injector head and the support part.

Abstract translation: 用于原子层沉积在片状基底的表面上的装置，包括：注射器头，其包括设置有前体供体和前体排出物的沉积空间; 所述供应和排出设置成用于从所述前体供应源经由所述沉积空间向所述前体排放提供前体气体流; 使用中的沉积空间被注射器头和衬底表面限定; 包括轴承气体注入器的气体轴承，其被布置用于在所述喷射头和所述基板表面之间注入轴承气体，所述轴承气体因此形成气体轴承; 输送系统，其提供所述基底和所述注射器头沿着所述基底的平面的相对运动，以形成所述基底沿着所述输送平面传送的输送平面。 支撑部分，布置成与注射器头相对，支撑部分被构造成提供气体支承压力装置，其平衡输送平面中的喷射器头部气体轴承，使得基板由支撑压力排列保持在喷射器之间 头部和支撑部分。

公开(公告)号：US20140003892A1

公开(公告)日：2014-01-02

申请号：US14005461

申请日：2012-03-06

Applicant: Kaoru Yamamoto ,  Masamichi Hara ,  Tetsuya Miyashita

Inventor： Kaoru Yamamoto ,  Masamichi Hara ,  Tetsuya Miyashita

IPC: F16K3/30 ,  B65G49/00

CPC classification number: F16K3/30 ,  B65G49/00 ,  C23C14/566 ,  C23C16/16 ,  C23C16/4401 ,  F16K3/0227 ,  F16K3/182 ,  F16K51/02 ,  H01L21/28556 ,  H01L21/67126 ,  H01L21/76841

Abstract: A substrate processing device includes a depressurizable hot wall chamber having a sidewall with a temperature which becomes higher than room temperature and a first substrate transferring port provided in the sidewall, a depressurizable transfer chamber having a transfer arm mechanism and a second substrate transferring port, and a gate valve unit provided between the hot wall chamber and the transfer chamber. The gate valve unit includes: a housing having a sidewall provided with communicating holes, a first housing substrate transferring port, and a second housing substrate transferring port; a valve body which is elevatable in the housing; and a double sealing structure having a first sealing member and a second sealing member provided at an outer side of the first sealing member. The communicating holes communicate a gap between the first sealing member and the second sealing member with an internal space of the housing.

Abstract translation: 基板处理装置包括具有侧壁的可降压热壁室，其温度变得高于室温，以及设置在侧壁中的第一基板输送口，具有转移臂机构和第二基板输送口的可降压输送室，以及 设置在所述热壁室和所述传送室之间的闸阀单元。 闸阀单元包括：壳体，其具有设置有连通孔的侧壁，第一壳体基板传送端口和第二壳体基板传送端口; 可在壳体内升降的阀体; 以及具有第一密封构件和设置在第一密封构件的外侧的第二密封构件的双重密封结构。 连通孔与第一密封构件和第二密封构件之间的间隙与壳体的内部空间连通。

公开(公告)号：US08597429B2

公开(公告)日：2013-12-03

申请号：US13350102

申请日：2012-01-13

Applicant: Kunihiko Suzuki ,  Hironobu Hirata

Inventor： Kunihiko Suzuki ,  Hironobu Hirata

IPC: C23C16/00 ,  H01L21/31

CPC classification number: C23C16/4401 ,  C23C16/24 ,  C23C16/4412

Abstract: Provided is a semiconductor manufacturing apparatus including: a reaction chamber including a gas supply inlet and a gas exhaust outlet, and into which a wafer is to be introduced; a process gas supply mechanism that supplies process gas into the reaction chamber from the gas supply inlet of the reaction chamber; a wafer retaining member that is arranged in the reaction chamber and that retains the wafer; a heater that heats the wafer retained by the wafer retaining member to a predetermined temperature; a rotation drive control mechanism that rotates the wafer retaining member together with the wafer; a gas exhaustion mechanism that exhausts gas in the reaction chamber from the gas exhaust outlet of the reaction chamber; and a drain that is disposed at a bottom portion near a wall surface in the reaction chamber and that collects and discharges oily silane that drips from the wall surface.

Abstract translation: 提供一种半导体制造装置，包括：反应室，包括气体供给入口和排气出口，并且其中将引入晶片; 处理气体供给机构，其从所述反应室的气体供给口向所述反应室供给处理气体; 晶片保持构件，其布置在所述反应室中并保持所述晶片; 将由晶片保持构件保持的晶片加热到预定温度的加热器; 旋转驱动控制机构，其使晶片保持构件与晶片一起旋转; 气体排出机构，其从反应室的排气口排出反应室中的气体; 以及设置在反应室内的壁面附近的底部并排出从壁面滴下的油性硅烷的排水管。

公开(公告)号：US08568529B2

公开(公告)日：2013-10-29

申请号：US12637019

申请日：2009-12-14

Applicant: Tetsuya Ishikawa ,  David H. Quach ,  Anzhong Chang ,  Olga Kryliouk ,  Yuriy Melnik ,  Harsukhdeep S. Ratia ,  Son T. Nguyen ,  Lily Pang

Inventor： Tetsuya Ishikawa ,  David H. Quach ,  Anzhong Chang ,  Olga Kryliouk ,  Yuriy Melnik ,  Harsukhdeep S. Ratia ,  Son T. Nguyen ,  Lily Pang

IPC: C30B21/02

CPC classification number: C30B29/403 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/45565 ,  C23C16/46 ,  C30B25/02 ,  C30B29/406 ,  Y10T137/479 ,  Y10T137/4807 ,  Y10T137/4824 ,  Y10T137/7504 ,  Y10T137/8376

Abstract: Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

Abstract translation: 本文公开的实施例通常涉及HVPE室。 腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。 例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。 氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。 不同的温度导致气体混合在一起，反应并沉积在基板上，而在室壁上很少或没有沉积。

公开(公告)号：US20130280833A1

公开(公告)日：2013-10-24

申请号：US13869620

申请日：2013-04-24

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Tony Maindron

IPC: H01L51/56 ,  C23C16/455

CPC classification number: H01L51/56 ,  C23C16/403 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/45544 ,  C23C16/45555 ,  C23C16/45591 ,  H01L51/5237 ,  H01L51/5253

Abstract: The present invention relates to a reactor for atomic layer deposition (ALD), comprising a reaction chamber comprising a platen and bounded internally by surfaces; at least one inlet orifice and at least one outlet orifice, each emerging from one of the surfaces bounding the chamber. The reactor furthermore comprises, within it, at least one wall apertured with at least one orifice, the apertured wall extending around the platen and over at least most of the height between the lower surface and the upper surface, at least one orifice in at least one of the apertured walls not facing the inlet orifice so as to form chicanes in the flow of gaseous precursor from each inlet orifice to the platen.

Abstract translation: 本发明涉及一种用于原子层沉积（ALD）的反应器，它包括一个反应室，该反应室包括压板并由表面内部界定; 至少一个入口孔口和至少一个出口孔口，每个出口孔口从包围该腔室的一个表面出来。 反应器还包括在其内部具有至少一个孔的至少一个壁，多个孔围绕压板延伸并且在下表面和上表面之间至少大部分高度，至少一个孔至少 多孔壁中的一个不面向入口孔，以便在从每个入口孔到压板的气态前体流中形成chicanes。