公开(公告)号：US20140159042A1

公开(公告)日：2014-06-12

申请号：US14002875

申请日：2012-03-02

申请人： Douglas Arthur Hutchings ,  Seth Daniel Shumate ,  Hameed Naseem

发明人： Douglas Arthur Hutchings ,  Seth Daniel Shumate ,  Hameed Naseem

IPC分类号： H01L21/02 ,  H01L29/04

CPC分类号： H01L21/02669 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02672 ,  H01L29/04 ,  H01L31/03685 ,  H01L31/068 ,  H01L31/182 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/545 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： Certain aspects of the present disclosure are directed to a method that includes: depositing, in a deposition environment, an amorphous semiconductor material on a substrate to form a semiconductor film on the substrate; filling, in the depositing process, the deposition environment with a first precursor material such that the semiconductor film formed on the substrate includes a first layer having a first material characteristic; filling, in the depositing process, the deposition environment with a crystallization-stop precursor material such that the silicon film includes a crystallization-stop layer having a crystallization characteristic different from a crystallization characteristic of the first layer; depositing a metal film on the semiconductor film; and annealing the semiconductor film and the metal film at an predetermined annealing temperature for a predetermined period of time such that the first layer is at least partially crystallized and the crystallization-stop layer is at least partially amorphous.

摘要翻译： 本公开的某些方面涉及一种方法，其包括：在沉积环境中在衬底上沉积非晶半导体材料以在衬底上形成半导体膜; 在沉积工艺中，利用第一前体材料填充沉积环境，使得形成在衬底上的半导体膜包括具有第一材料特性的第一层; 在沉积过程中用结晶停止前体材料填充沉积环境，使得硅膜包括具有与第一层的结晶特性不同的结晶特征的结晶停止层; 在半导体膜上沉积金属膜; 以及在预定的退火温度下将所述半导体膜和所述金属膜退火预定的时间段，使得所述第一层至少部分结晶，并且所述结晶停止层至少部分为无定形的。

公开(公告)号：US08679892B2

公开(公告)日：2014-03-25

申请号：US13343373

申请日：2012-01-04

申请人： Tomi T. Li ,  Jeng-Yang Chang ,  Sheng-Hui Chen ,  Cheng-Chung Lee

发明人： Tomi T. Li ,  Jeng-Yang Chang ,  Sheng-Hui Chen ,  Cheng-Chung Lee

IPC分类号： H01L21/00 ,  H01L31/0376 ,  H01L31/0384

CPC分类号： H01L31/0376 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/03845 ,  H01L31/065 ,  H01L31/075 ,  H01L31/1804 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： The present invention relates to a method for manufacturing silicon thin-film solar cells, including: providing a substrate; forming a first electrode on the substrate; forming a first doped semiconductor layer on the first electrode by chemical vapor deposition; forming an intrinsic layer on the first doped semiconductor layer by chemical vapor deposition, where the intrinsic layer includes a plurality of amorphous/nanocrystalline silicon layers, and the intrinsic layer has various energy bandgaps formed by varying average grain sizes of the amorphous/nanocrystalline silicon layers; forming a second doped semiconductor layer on the intrinsic layer by chemical vapor deposition, where one of the first doped semiconductor layer and the second doped semiconductor layer is a p-type amorphous silicon layer and the other is an n-type amorphous/nano-microcrystalline silicon layer; and forming a second electrode on the second doped semiconductor layer. Accordingly, the present invention can achieve broadband absorption in a single junction structure.

摘要翻译： 本发明涉及一种制造硅薄膜太阳能电池的方法，包括：提供基板; 在所述基板上形成第一电极; 通过化学气相沉积在所述第一电极上形成第一掺杂半导体层; 通过化学气相沉积在所述第一掺杂半导体层上形成本征层，其中所述本征层包括多个非晶/纳米晶硅层，并且所述本征层具有通过改变所述非晶/纳米晶硅层的平均晶粒尺寸而形成的各种能带隙 ; 通过化学气相沉积在本征层上形成第二掺杂半导体层，其中第一掺杂半导体层和第二掺杂半导体层中的一个是p型非晶硅层，另一个是n型非晶/纳米微晶 硅层; 以及在所述第二掺杂半导体层上形成第二电极。 因此，本发明可以实现单结结构中的宽带吸收。

公开(公告)号：US20130340818A1

公开(公告)日：2013-12-26

申请号：US13974681

申请日：2013-08-23

申请人： Intellectual Discovery Co., Ltd.

发明人： Seung-Yeop MYONG

IPC分类号： H01L31/0352

CPC分类号： H01L31/03529 ,  H01L31/02363 ,  H01L31/03685 ,  H01L31/03687 ,  H01L31/03845 ,  H01L31/03926 ,  H01L31/076 ,  Y02E10/52 ,  Y02E10/545 ,  Y02E10/548

摘要： A photovoltaic device including a substrate; a first electrode placed on the substrate; a second electrode which is placed opposite to the first electrode and which light is incident on; a first unit cell being placed between the first electrode and the second electrode, and including an intrinsic semiconductor layer including crystalline silicon grains making the surface of the intrinsic semiconductor layer toward the second electrode textured; and a second unit cell placed between the first unit cell and the second electrode.

摘要翻译： 一种包括基板的光电器件; 放置在基板上的第一电极; 与第一电极相对设置并且入射的第二电极; 第一单元电池被放置在第一电极和第二电极之间，并且包括本征半导体层，其包括使本征半导体层的表面朝向第二电极纹理化的晶体硅晶粒; 以及放置在第一单元电池和第二电极之间的第二单元电池。

公开(公告)号：US20130240038A1

公开(公告)日：2013-09-19

申请号：US13893438

申请日：2013-05-14

申请人： SANYO ELECTRIC CO., LTD.

发明人： Mitsuoki HISHIDA ,  Hiroyuki UENO

IPC分类号： H01L31/0368 ,  H01L31/18

CPC分类号： H01L31/03685 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L31/02167 ,  H01L31/076 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic device comprises a microcrystalline silicon layer, wherein the microcrystalline silicon layer, when a maximum value of a crystallinity Xc along a film thickness direction is scaled to 1, shows increasing tendency of the crystallinity Xc along the film thickness direction, and has a high-nitrogen-concentration region (region a) of higher nitrogen concentration than other regions in the microcrystalline silicon layer in a range of the film thickness direction where the crystallinity Xc is 0.75 or more.

摘要翻译： 光电器件包括微晶硅层，其中当沿着膜厚度方向的结晶度Xc的最大值被缩放到1时，微晶硅层显示结晶度Xc沿着膜厚度方向的增加的趋势，并且具有高的 在结晶度Xc为0.75以上的膜厚方向的范围内，氮浓度高于微晶硅层中的其他区域的氮浓度区域（区域a）。

公开(公告)号：US20130180571A1

公开(公告)日：2013-07-18

申请号：US13515286

申请日：2011-05-16

申请人： Nobuyuki Masuda

发明人： Nobuyuki Masuda

IPC分类号： H01L31/05

CPC分类号： H01L31/0504 ,  H01L31/022425 ,  H01L31/03685 ,  H01L31/0392 ,  H01L31/03926 ,  H01L31/0465 ,  H01L31/0516 ,  Y02E10/545 ,  Y02E10/548

摘要： In a thin-film photovoltaic cell, a first electrode layer, a semiconductor layer, and a third electrode layer are formed on a main surface of an insulating substrate. A second electrode layer and a fourth electrode layer are formed on another surface of the substrate. In a main surface side processed portion, the first electrode layer, semiconductor layer, and third electrode layer are removed, and in another surface side processed portion, the second electrode layer and fourth electrode layer are removed. Acceleration and deceleration regions for forming a crooked structure of the other surface side processed portion, or intersection portions of processing lines configuring the crooked structure, are disposed in locally electrically isolated regions in the first electrode layer before the formation of the semiconductor layer.

摘要翻译： 在薄膜光伏电池中，在绝缘基板的主表面上形成第一电极层，半导体层和第三电极层。 在基板的另一个表面上形成第二电极层和第四电极层。 在主表面处理部分中，去除第一电极层，半导体层和第三电极层，并且在另一表面侧处理部分中去除第二电极层和第四电极层。 在形成半导体层之前，在第一电极层的局部电隔离区域中设置用于形成另一表面侧处理部分的弯曲结构的加速和减速区域或构成弯曲结构的处理线路的交叉部分。

公开(公告)号：US08461451B2

公开(公告)日：2013-06-11

申请号：US12482606

申请日：2009-06-11

申请人： Ying Jun James Huang ,  Stephen Day

发明人： Ying Jun James Huang ,  Stephen Day

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L31/035281 ,  H01L31/03529 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/075 ,  Y02E10/544 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A vertical multi-junction photovoltaic device includes a structured substrate including a plurality of substantially vertical elongated structures protruding from a planar surface of the structured substrate. An areal density of the elongated structures at a first sliced plane parallel to the planer surface is different than an areal density of the elongated structures at a second sliced plane parallel to the planar surface. The device further includes least a first sub-cell and a second sub-cell, each having a corresponding vertical p-n or p-i-n junction formed of conformal layers, the first sub-cell being formed in a first region incorporating the first sliced plane and the second sub-cell being formed above the first sub-cell in a second region incorporating the second sliced plane.

摘要翻译： 垂直多结光伏器件包括结构化衬底，其包括从结构化衬底的平坦表面突出的多个基本垂直的细长结构。 在平行于平面的第一切片平面上的细长结构的面密度不同于平行于平面的第二切片平面上的细长结构的面密度。 该器件还包括至少一个第一子单元和第二子单元，每个子单元具有由共形层形成的对应的垂直pn或pin结，第一子单元形成在包含第一切割平面的第一区域中，第二子单元 在包含第二切片平面的第二区域中形成在第一子单元上方的子单元。

公开(公告)号：US20130087194A1

公开(公告)日：2013-04-11

申请号：US13703702

申请日：2011-07-29

申请人： Sung Jun Jang ,  Yong Tak Lee ,  Young Min Song

发明人： Sung Jun Jang ,  Yong Tak Lee ,  Young Min Song

IPC分类号： G02B1/11 ,  H01L31/028 ,  H01L31/18 ,  H01L31/032 ,  H01L31/0272 ,  H01L31/0296 ,  H01L31/0216 ,  H01L31/0368

CPC分类号： G02B1/11 ,  G02B1/115 ,  H01L31/0216 ,  H01L31/02168 ,  H01L31/0272 ,  H01L31/0284 ,  H01L31/0296 ,  H01L31/0322 ,  H01L31/03685 ,  H01L31/075 ,  H01L31/18 ,  Y02E10/548

摘要： The present invention relates to a silicon multilayer anti-reflective film with a gradually varying refractive index and a manufacturing method therefor, and a solar cell having the same and a manufacturing method therefor, wherein: the refractive index of a silicon thin film is adjusted by depositing silicon on a semiconductor or glass substrate with a slight tilt; and an anti-reflective film with a gradually varying refractive index is implemented using a silicon multi-layer film in which multi-layer film are stacked with different tilt angles. In addition, the silicon multilayer anti-reflective film according to the present invention is applied to a silicon solar cell, thereby suppressing reflection in the inside of the solar cell and providing an excellent heat radiation characteristic using a high heat transfer coefficient.

摘要翻译： 本发明涉及一种具有逐渐变化的折射率的硅多层抗反射膜及其制造方法及其制造方法及其制造方法，其特征在于：将硅薄膜的折射率调整为 在半导体或玻璃基板上以轻微的倾斜沉积硅; 并且使用其中多层膜以不同的倾斜角度层叠的硅多层膜来实现具有逐渐变化的折射率的抗反射膜。 此外，将本发明的硅多层抗反射膜应用于硅太阳能电池，由此抑制太阳能电池内部的反射，并且使用高的传热系数提供优异的散热特性。

公开(公告)号：US08343858B2

公开(公告)日：2013-01-01

申请号：US13035037

申请日：2011-02-25

申请人： Tetsuhiro Tanaka ,  Tomokazu Yokoi ,  Koji Dairiki

发明人： Tetsuhiro Tanaka ,  Tomokazu Yokoi ,  Koji Dairiki

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L31/1136 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L27/14692 ,  H01L31/03685 ,  Y02E10/545 ,  Y02E10/548

摘要： A method for manufacturing a microcrystalline semiconductor film having high crystallinity is provided. A method for manufacturing a semiconductor device which has favorable electric characteristics with high productivity is provided. After a first microcrystalline semiconductor film is formed over a substrate, treatment for flattening a surface of the first microcrystalline semiconductor film is performed. Then, treatment for removing an amorphous semiconductor region on a surface side of the flattened first microcrystalline semiconductor film is performed so that a second microcrystalline semiconductor film having high crystallinity and flatness is formed. After that, a third microcrystalline semiconductor film is formed over the second microcrystalline semiconductor film.

摘要翻译： 提供了一种制造具有高结晶度的微晶半导体膜的方法。 提供了一种具有良好的电特性，高生产率的半导体装置的制造方法。 在基板上形成第一微晶半导体膜之后，进行使第一微晶半导体膜的表面变平的处理。 然后，进行用于除去平坦化的第一微晶半导体膜的表面侧的非晶半导体区域的处理，使得形成具有高结晶度和平坦度的第二微晶半导体膜。 之后，在第二微晶半导体膜上形成第三微晶半导体膜。

公开(公告)号：US08313975B2

公开(公告)日：2012-11-20

申请号：US13222423

申请日：2011-08-31

申请人： Fumito Isaka ,  Sho Kato ,  Junpei Momo

发明人： Fumito Isaka ,  Sho Kato ,  Junpei Momo

IPC分类号： H01L21/30 ,  H01L21/301

CPC分类号： H01L31/022425 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/068 ,  H01L31/1892 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548

摘要： The purpose is manufacturing a photoelectric conversion device with excellent photoelectric conversion characteristics typified by a solar cell with effective use of a silicon material. A single crystal silicon layer is irradiated with a laser beam through an optical modulator to form an uneven structure on a surface thereof. The single crystal silicon layer is obtained in the following manner; an embrittlement layer is formed in a single crystal silicon substrate; one surface of a supporting substrate and one surface of an insulating layer formed over the single crystal silicon substrate are disposed to be in contact and bonded; heat treatment is performed; and the single crystal silicon layer is formed over the supporting substrate by separating part of the single crystal silicon substrate fixed to the supporting substrate along the embrittlement layer or a periphery of the embrittlement layer. Then, irradiation with a laser beam is performed on a separation surface of the single crystal silicon layer through an optical modulator which modulates light intensity regularly, and unevenness is formed on the surface. Due to the unevenness, reflection of incident light is reduced and absorptance with respect to light is improved, therefore, photoelectric conversion efficiency of the photoelectric conversion device is improved.

摘要翻译： 目的是制造具有优异的光电转换特性的光电转换装置，其特征在于以太阳能电池为代表，有效利用硅材料。 通过光学调制器用激光束照射单晶硅层，以在其表面上形成不均匀的结构。 以下列方式获得单晶硅层： 在单晶硅衬底中形成脆化层; 支撑基板的一个表面和形成在单晶硅基板上的绝缘层的一个表面被设置成接触和接合; 进行热处理; 并且通过沿着脆化层或脆化层的周边分离固定到支撑基板上的一部分单晶硅基板，在支撑基板上形成单晶硅层。 然后，通过光调制器在单晶硅层的分离面上进行激光束的照射，光调制器规则地调制光强度，并且在表面上形成不均匀性。 由于不均匀性，入射光的反射降低，相对于光的吸收性提高，光电转换装置的光电转换效率提高。

公开(公告)号：US08268714B2

公开(公告)日：2012-09-18

申请号：US13311891

申请日：2011-12-06

申请人： Chaehwan Jeong ,  Jong Ho Lee ,  Ho-Sung Kim ,  Seongjae Boo

发明人： Chaehwan Jeong ,  Jong Ho Lee ,  Ho-Sung Kim ,  Seongjae Boo

IPC分类号： H01L21/44

CPC分类号： H01L21/02381 ,  C23C16/24 ,  C23C16/507 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02592 ,  H01L21/0262 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/03765 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： In one example, a method for fabricating a solar cell comprising a first electrode, a first-type layer, an intrinsic layer, a second-type layer and a second electrode is disclosed. The method comprising forming a second-type layer including an amorphous silicon (Si) carbide thin film by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H2) gas, silane (SiH4) gas, diborane (B2H6) and ethylene (C2H4) gas, wherein the ethylene (C2H4) gas includes 60% hydrogen gas diluted ethylene gas, the diborane gas is 97% hydrogen gas diluted diborane gas, the mixed gas includes 1 to 1.2% ethylene gas and 6 to 6.5% diborane gas.

摘要翻译： 在一个实例中，公开了一种制造包括第一电极，第一类型层，本征层，第二类型层和第二电极的太阳能电池的方法。 该方法包括通过使用包括氢（H 2）气，硅烷（SiH 4）气体，乙硼烷的混合气体的电感耦合等离子体化学气相沉积（ICP-CVD）装置形成包括非晶硅（Si）碳化物薄膜的第二类型层 （B2H6）和乙烯（C2H4）气体，其中乙烯（C2H4）气体包括60％氢气稀释的乙烯气体，乙硼烷气体为97％氢气稀释的乙硼烷气体，混合气体包括1至1.2％的乙烯气体和6 至6.5％乙硼烷气体。