中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

123 records (took 0.036 seconds)

    Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs)
    81.
    发明授权
    Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) 有权
    在光子集成电路（PIC）中的有源半导体器件中的氧掺杂的含Al电流阻挡层

    公开(公告)号：US07208770B2

    公开(公告)日：2007-04-24

    申请号：US11059207

    申请日：2005-02-16

    Applicant: Fred A. Kish, Jr. ,  Sheila Hurtt ,  Charles H. Joyner ,  Richard P. Schneider

    Inventor： Fred A. Kish, Jr. ,  Sheila Hurtt ,  Charles H. Joyner ,  Richard P. Schneider

    IPC: H01L33/00 ,  H01L29/22

    CPC classification number: B82Y20/00 ,  H01L31/03046 ,  H01L31/109 ,  H01L33/145 ,  H01S5/026 ,  H01S5/2072 ,  H01S5/221 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2227 ,  H01S5/2231 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/3072 ,  H01S5/34306 ,  Y02E10/544

    Abstract: In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality of semiconductor layers are formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III-V compound, i.e., an Al-III-V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III-V layer. An example of a material system for this invention useful at optical telecommunication wavelengths is InGaAsP/InP where the Al-III-V layer comprises InAlAs:O or InAlAs:O:Fe. Other materials for the blocking layers may be InAlGaAs or alternating layers or alternating monolayers of AlAs/InAs. Thus, the O-doped blocking layers may be undoped, impurity doped or co-doped with Fe.

    Abstract translation: 在具有至少一个有源半导体器件（例如掩埋异质结构半导体激光器，LED，调制器，光电二极管，异质结双极晶体管，场效应晶体管或其它有源器件）的光子集成电路（PIC）中，多个半导体层 其中一层是活性区的基底。 通过由形成在指定的有源区通道的相邻侧上的电流阻挡层限定的有源区形成电流通道，其中阻挡层基本上限制电流通过通道。 阻挡层的特征在于含有铝的III-V族化合物，即有意从氧化物源掺杂氧的Al-III-V层。 此外，湿氧化物工艺或沉积的氧化物源可用于横向形成Al-III-V层的天然氧化物。 在光通信波长下用于本发明的材料系统的一个例子是InGaAsP / InP，其中Al-III-V层包括InAlAs：O或InAlAs：O：Fe。 用于阻挡层的其它材料可以是AlAlGaAs或AlAs / InAs的交替层或交替单层。 因此，O掺杂阻挡层可以是未掺杂的，杂质掺杂的或与Fe共掺杂的。

    Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs)
    83.
    发明授权
    Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) 有权
    在光子集成电路（PIC）中的有源半导体器件中的氧掺杂的含Al电流阻挡层

    公开(公告)号：US07122846B2

    公开(公告)日：2006-10-17

    申请号：US11059201

    申请日：2005-02-16

    Applicant: Fred A. Kish, Jr. ,  Sheila Hurtt ,  Charles H. Joyner ,  Richard P. Schneider

    Inventor： Fred A. Kish, Jr. ,  Sheila Hurtt ,  Charles H. Joyner ,  Richard P. Schneider

    IPC: H01L29/221 ,  H01L29/22

    CPC classification number: B82Y20/00 ,  H01L31/03046 ,  H01L31/109 ,  H01L33/145 ,  H01S5/026 ,  H01S5/2072 ,  H01S5/221 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2227 ,  H01S5/2231 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/3072 ,  H01S5/34306 ,  Y02E10/544

    Abstract: In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality of semiconductor layers are formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III-V compound, i.e., an Al-III-V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III-V layer. An example of a material system for this invention useful at optical telecommunication wavelengths is InGaAsP/InP where the Al-III-V layer comprises InAlAs:O or InAlAs:O:Fe. Other materials for the blocking layers may be InAlGaAs or alternating layers or alternating monolayers of AlAs/InAs. Thus, the O-doped blocking layers may be undoped, impurity doped or co-doped with Fe.

    Abstract translation: 在具有至少一个有源半导体器件（例如掩埋异质结构半导体激光器，LED，调制器，光电二极管，异质结双极晶体管，场效应晶体管或其它有源器件）的光子集成电路（PIC）中，多个半导体层 其中一层是活性区的基底。 通过由形成在指定的有源区通道的相邻侧上的电流阻挡层限定的有源区形成电流通道，其中阻挡层基本上限制电流通过通道。 阻挡层的特征在于含有铝的III-V族化合物，即有意从氧化物源掺杂氧的Al-III-V层。 此外，湿氧化物工艺或沉积的氧化物源可用于横向形成Al-III-V层的天然氧化物。 在光通信波长下用于本发明的材料系统的一个例子是InGaAsP / InP，其中Al-III-V层包括InAlAs：O或InAlAs：O：Fe。 用于阻挡层的其它材料可以是AlAlGaAs或AlAs / InAs的交替层或交替单层。 因此，O掺杂阻挡层可以是未掺杂的，杂质掺杂的或与Fe共掺杂的。

    Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip
    90.
    发明授权
    Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip 有权
    用于增加大功率LED芯片上可反射可焊接触点的镜面反射率的扩散屏障

    公开(公告)号：US06222207B1

    公开(公告)日：2001-04-24

    申请号：US09317647

    申请日：1999-05-24

    Applicant: Carrie Carter-Coman ,  Gloria Hofler ,  Fred A. Kish, Jr.

    Inventor： Carrie Carter-Coman ,  Gloria Hofler ,  Fred A. Kish, Jr.

    IPC: H01L3300

    CPC classification number: H01L33/405

    Abstract: A solderable light-emitting diode (LED) chip and a method of fabricating an LED lamp embodying the LED chip utilize a diffusion barrier that appreciably blocks molecular migration between two different layers of the LED chip during high temperature processes. In the preferred embodiment, the two different layers of the LED chip are a back reflector and a solder layer. The prevention of intermixing of the materials in the back reflector and the solder layer impedes degradation of the back reflector with respect to its ability to reflect light emitted by the LED. The LED chip includes a high power AlInGaP LED or other type of LED, a back reflector, a diffusion barrier and a solder layer. Preferably, the back reflector is composed of silver (Ag) or Ag alloy and the solder layer is made of indium (In), lead (Pb), gold (Au), tin (Sn), or their alloy and eutectics. In a first embodiment, the diffusion layer is made of nickel (Ni) or nickel-vanadium (NiV). In a second embodiment of the invention, the diffusion barrier is made of titanium-tungsten-nitride (TiW:N). In addition to preventing the intermixing of the In of the solder layer with the Ag of the back reflector, the diffusion layer prevents degradation of the Ag reflective properties in the back reflector upon exposure to air. In an alternative embodiment, the diffusion layer is made of a non-conductive material.

    Abstract translation: 可焊接的发光二极管（LED）芯片和制造实施LED芯片的LED灯的方法利用在高温过程中可以明显阻挡LED芯片的两个不同层之间的分子迁移的扩散阻挡层。 在优选实施例中，LED芯片的两个不同层是后反射器和焊料层。 防止背反射器和焊料层中的材料的混合相对于其反射由LED发射的光的能力而妨碍背反射器的劣化。 LED芯片包括高功率AlInGaP LED或其他类型的LED，后反射器，扩散阻挡层和焊料层。 优选地，背反射器由银（Ag）或Ag合金构成，并且焊料层由铟（In），铅（Pb），金（Au），锡（Sn）或其合金和共晶体制成。 在第一实施例中，扩散层由镍（Ni）或镍 - 钒（NiV）制成。 在本发明的第二实施例中，扩散阻挡层由钛 - 氮化钨（TiW：N）制成。 除了防止焊料层的In与后反射体的Ag的混合之外，扩散层防止了暴露于空气中后反射器中的Ag反射特性的劣化。 在替代实施例中，扩散层由非导电材料制成。

Patent Agency Ranking