利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

101 条记录 (耗时 0.064 秒)

    Ion implantation device
    81.
    发明授权
    Ion implantation device 失效
    离子注入装置

    公开(公告)号：US5525807A

    公开(公告)日：1996-06-11

    申请号：US465420

    申请日：1995-06-05

    申请人： Suguru Hirokawa ,  Frank Sinclair ,  Neil E. DeMario

    发明人： Suguru Hirokawa ,  Frank Sinclair ,  Neil E. DeMario

    IPC分类号： H01J37/304 ,  H01J37/317 ,  H01L21/687 ,  H01J37/00

    CPC分类号： H01L21/68728 ,  H01J37/304 ,  H01J37/3171 ,  H01L21/68764 ,  H01L21/68771 ,  H01J2237/202 ,  H01J2237/31703

    摘要： An ion implantation device equipped with a high-speed driving device which causes rotation of the a disk that supports semiconductor wafers around it outer periphery. A center position of the disk is the axis of the rotation of the high speed rotation. A low-speed driving device causes relative movement of the disk in a radial direction. The ion implantation device further has a control circuit which calculates the movement speed of the aforementioned low-speed driving device with reference to different spacings between wafers about the outer periphery and the distance from the center of the disk to the ion implantation position, and controls said low speed scan speed so that ions are uniformly implanted into the aforementioned wafers.

    摘要翻译： 一种配备有高速驱动装置的离子注入装置，其使围绕其外周的半导体晶片支撑的盘的旋转。 盘的中心位置是高速旋转的旋转轴。 低速驱动装置导致盘在径向上的相对运动。 离子注入装置还具有控制电路，该控制电路基于围绕外周的晶片间的不同间隔和从盘的中心到离子注入位置的距离来计算上述低速驱动装置的移动速度，并且控制 所述低速扫描速度使得离子均匀地注入到上述晶片中。

    Wastewater treatment system and method
    82.
    发明授权
    Wastewater treatment system and method 失效
    污水处理系统及方法

    公开(公告)号：US5156741A

    公开(公告)日：1992-10-20

    申请号：US636062

    申请日：1990-12-28

    申请人： Dean N. Morrison ,  Marvin Daniels ,  Frank Sinclair ,  G. S. Tiwari

    发明人： Dean N. Morrison ,  Marvin Daniels ,  Frank Sinclair ,  G. S. Tiwari

    IPC分类号： C02F3/04 ,  C02F3/06 ,  C02F3/32

    CPC分类号： C02F3/06 ,  C02F3/046 ,  C02F3/327 ,  Y02W10/15 ,  Y02W10/18 ,  Y02W10/37

    摘要： A biological treatment system and method is provided for treating wastewater from a treatment plant which provides primary and secondary treatment. An aggregate-filled bed enclosed by a water-impervious barrier is used to receive and cleanse the wastewater using the roots of turf grass grown on the top of the bed. Wastewater is introduced near the bottom of the bed and flows generally upwardly through the voids in the media, passing through the root system of the turf grass. Wastewater is withdrawn from the bed at a higher level than it is introduced. The top surface of the bed remains dry and is capable of supporting pedestrian and vehicular traffic. A recirculation system maintains the generally upward flow of water through the bed. Transpiration reduces the volume of the wastewater and the biological cleansing action of the roots cleanses the wastewater. Alternative forms of the bed are described.

    摘要翻译： 提供了一种生物处理系统和方法，用于处理提供初级和次级处理的处理厂的废水。 由不透水屏障包围的聚集体填充床用于使用在床顶部生长的草坪草的根部接收和清洁废水。 废水在床底附近引入，通常通过介质中的空隙向上流动，通过草皮草的根系。 废水从床上撤出的水平高于引进的水平。 床的顶面保持干燥，能够支持行人和车辆交通。 再循环系统保持大体向上的水流通过床。 蒸腾作用减少了废水的体积，并且根部的生物清洁作用清洗了废水。 描述床的替代形式。

    Excited gas injection for ion implant control
    84.
    发明授权
    Excited gas injection for ion implant control 有权
    激发气体注入用于离子注入控制

    公开(公告)号：US08501624B2

    公开(公告)日：2013-08-06

    申请号：US12328096

    申请日：2008-12-04

    申请人： Bon-Woong Koo ,  Victor Benveniste ,  Christopher A. Rowland ,  Craig R. Chaney ,  Frank Sinclair ,  Neil J. Bassom

    发明人： Bon-Woong Koo ,  Victor Benveniste ,  Christopher A. Rowland ,  Craig R. Chaney ,  Frank Sinclair ,  Neil J. Bassom

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01J27/022 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32412 ,  H01J37/32422 ,  H01J2237/006 ,  H01J2237/061 ,  H01J2237/0815 ,  H01J2237/24514

    摘要： An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.

    摘要翻译： 公开了一种利用离子源和/或原子气体注入的离子源。 在离子束施加中，源气体可以直接使用，如通常提供的。 或者或另外，源气体可以在被引入离子源室之前通过将其通过远程等离子体源来改变。 这可以用于产生兴奋的中性粒子，重离子，亚稳分子或多电荷离子。 在另一个实施例中，使用多个气体，其中一个或多个气体通过远程等离子体发生器。 在某些实施方案中，气体在被提供给离子源室之前组合在单个等离子体发生器中。 在等离子体浸渍应用中，通过一个或多个另外的气体注入位置将等离子体注入到处理室中。 这些注入位置允许通过处理室外部的远程等离子体源产生的附加等离子体的流入。

    SYSTEM AND METHOD FOR PRODUCING A MASS ANALYZED ION BEAM FOR HIGH THROUGHPUT OPERATION
    87.
    发明申请
    SYSTEM AND METHOD FOR PRODUCING A MASS ANALYZED ION BEAM FOR HIGH THROUGHPUT OPERATION 审中-公开
    用于生产用于高通量运行的质量分析离子束的系统和方法

    公开(公告)号：US20130001414A1

    公开(公告)日：2013-01-03

    申请号：US13175404

    申请日：2011-07-01

    申请人： Victor M. Benveniste ,  Frank Sinclair ,  Svetlana Radovanov ,  Bon-Woong Koo

    发明人： Victor M. Benveniste ,  Frank Sinclair ,  Svetlana Radovanov ,  Bon-Woong Koo

    IPC分类号： H01J49/10

    CPC分类号： H01J37/05 ,  H01J37/1472 ,  H01J37/3171 ,  H01J49/30 ,  H01J2237/055 ,  H01J2237/057

    摘要： A system for producing a mass analyzed ion beam for implanting into a workpiece, includes an extraction plate having a set of apertures having a longitudinal axis of the aperture. The set of apertures are configured to extract ions from an ion source to form a plurality of beamlets. The system also includes an analyzing magnet region configured to provide a magnetic field to deflect ions in the beamlets in a first direction that is generally perpendicular to the longitudinal axis of the apertures. The system further includes a mass analysis plate having a set of apertures configured to transmit first ion species having a first mass/charge ratio and to block second ion species having a second mass/charge ratio and a workpiece holder configured to move with respect to the mass analysis plate along the first direction.

    摘要翻译： 用于生产用于植入工件的质量分析离子束的系统包括具有一组具有孔的纵向轴线的孔的抽出板。 该组孔被构造成从离子源提取离子以形成多个子束。 该系统还包括分析磁体区域，其被配置为提供磁场以沿着大致垂直于孔的纵向轴线的第一方向偏转子束中的离子。 该系统还包括质量分析板，该质量分析板具有一组孔口，其被配置为透射具有第一质量/带电比的第一离子种类并阻挡具有第二质量/加料比的第二离子种类和被配置为相对于 质量分析板沿第一方向。

    Transmission energy contamination detector
    89.
    发明授权
    Transmission energy contamination detector 有权
    传输能量污染检测器

    公开(公告)号：US08258489B2

    公开(公告)日：2012-09-04

    申请号：US12750893

    申请日：2010-03-31

    申请人： Frank Sinclair

    发明人： Frank Sinclair

    IPC分类号： H01J37/00 ,  H01J37/317

    CPC分类号： H01J37/244 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/24507 ,  H01J2237/24585 ,  H01J2237/30472 ,  H01J2237/31703

    摘要： An energy contamination detection apparatus includes a membrane and a charge collection plate disposed at a distance from the membrane. The membrane is configured to receive an ion beam and allow a portion of the ion beam having energy levels above a desired energy level to pass therethrough toward the charge collection plate and absorb or reflect portions of the ion beam having energy levels at or below the desired energy level. A voltage source is electrically coupled to the charge collection plate for providing a bias voltage to the charge collection plate. A detection circuit is coupled to the charge collection plate and is configured to detect energy contamination based on an amount of charge collected on the charge collection plate.

    摘要翻译： 能量污染检测装置包括设置在与膜隔开一定距离处的膜和电荷收集板。 膜被配置为接收离子束并且允许具有高于期望能级的能量级的一部分离子束通过其中朝向电荷收集板，并吸收或反射具有等于或低于期望值的能级的离子束的部分 能级。 电压源电耦合到电荷收集板，用于向电荷收集板提供偏置电压。 检测电路耦合到电荷收集板，并且被配置为基于在电荷收集板上收集的电荷量来检测能量污染。

    TECHNIQUE FOR MANUFACTURING BIT PATTERNED MEDIA
    90.
    发明申请
    TECHNIQUE FOR MANUFACTURING BIT PATTERNED MEDIA 有权
    制造位图形图的技术

    公开(公告)号：US20120175342A1

    公开(公告)日：2012-07-12

    申请号：US13342762

    申请日：2012-01-03

    申请人： Frank Sinclair ,  Julian G. Blake ,  Helen L. Maynard ,  Alexander C. Kontos

    发明人： Frank Sinclair ,  Julian G. Blake ,  Helen L. Maynard ,  Alexander C. Kontos

    IPC分类号： C23F1/00 ,  B05D5/12

    CPC分类号： G11B5/855

    摘要： A novel, technique: for manufacturing bit patterned media is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for manufacturing hit pattern media. The technique, which may be realized as a method comprising: forming a non-catalysis region on a first portion of a catalysis layer; forming a non-magnetic separator on the non-catalysis region; and forming a magnetic active region on it second portion of the catalysis layer adjacent to the first portion of the catalysis layer.

    摘要翻译： 公开了一种新颖的技术：用于制造位图案的介质。 在一个特定的示例性实施例中，该技术可以被实现为用于制造命中图案媒体的方法。 该技术可以被实现为一种方法，包括：在催化层的第一部分上形成非催化区; 在非催化区上形成非磁性分离器; 以及在催化层的与催化层的第一部分相邻的第二部分上形成磁性活性区域。