公开(公告)号：US5985458A

公开(公告)日：1999-11-16

申请号：US928464

申请日：1997-09-12

申请人： Marie Angelopoulos ,  Vlasta A. Brusic ,  Teresita Ordonez Graham ,  Sampath Purushothaman ,  Ravi F. Saraf ,  Jane Margaret Shaw ,  Judith Marie Roldan ,  Alfred Viehbeck

发明人： Marie Angelopoulos ,  Vlasta A. Brusic ,  Teresita Ordonez Graham ,  Sampath Purushothaman ,  Ravi F. Saraf ,  Jane Margaret Shaw ,  Judith Marie Roldan ,  Alfred Viehbeck

IPC分类号： C08G61/12 ,  C08L33/00 ,  C08L65/00 ,  C09D5/08 ,  C09D5/24 ,  C09J9/02 ,  H01B1/12 ,  H01B1/22 ,  H01B1/24 ,  H05K3/32 ,  H05K9/00 ,  B32B15/08

CPC分类号： H05K9/0083 ,  C08G61/12 ,  C08L65/00 ,  C09D5/08 ,  C09D5/24 ,  C09J9/02 ,  H01B1/125 ,  H01B1/127 ,  H01B1/128 ,  H01B1/22 ,  H01B1/24 ,  H05K3/321 ,  H05K9/0079 ,  H05K9/0088 ,  C08L33/00 ,  H05K2201/0329 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/25 ,  Y10T428/31529 ,  Y10T428/31533 ,  Y10T428/31605 ,  Y10T428/31663 ,  Y10T428/31678 ,  Y10T428/31681 ,  Y10T428/31692 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31855

摘要： A composition containing a polymeric matrix and a conductive filler component is provided. The conductive filler component comprises conductive particles and a polymer selected from the group consisting of substituted and unsubstituted polyanilines, substituted and unsubstituted polyparaphenylenevinylenes, substituted and unsubstituted polythiophenes, substituted and unsubstituted polyazines, substituted and unsubstituted polyparaphenylenes, substituted and unsubstituted polyfuranes, substituted and unsubstituted polypyrroles, substituted and unsubstituted polyselenophene, substituted and unsubstituted poly-p-phenylene sulfides and substiututed and unsubstituted polyacetylenes, and mixtures thereof, and copolymers thereof. Compositions of the present invention are useful as corrosion protecting layers for metal substrates, for electrostatic discharge protection, electromagnetic interference shielding, and as adhesives for interconnect technology as alternatives to solder interconnections. In addition, films of polyanilines are useful as corrosion protecting layers with or without the conductive metal particles.

摘要翻译： 提供含有聚合物基质和导电填料组分的组合物。 导电填料组分包括导电颗粒和选自取代和未取代的聚苯胺，取代和未取代的聚对亚苯基亚乙烯基，取代和未取代的聚噻吩，取代和未取代的聚吡嗪，取代和未取代的聚对苯二甲酸，取代和未取代的聚呋喃，取代和未取代的聚吡咯 取代和未取代的聚硒吩，取代和未取代的聚对苯硫醚和取代和未取代的聚乙炔，及其混合物，及其共聚物。 本发明的组合物可用作金属基材的防腐层，用于静电放电保护，电磁干扰屏蔽，以及作为焊接互连替代物的互连技术的粘合剂。 此外，聚苯胺的膜可用作具有或不具有导电金属颗粒的防腐蚀层。

公开(公告)号：US5958590A

公开(公告)日：1999-09-28

申请号：US414070

申请日：1995-03-31

申请人： Sung Kwon Kang ,  Sampath Purushothaman ,  George Frederick Walker

发明人： Sung Kwon Kang ,  Sampath Purushothaman ,  George Frederick Walker

IPC分类号： H05K1/14 ,  H01B1/00 ,  H01B1/02 ,  H01B1/22 ,  H05K3/32 ,  H05K3/34 ,  H05K3/40 ,  B32B5/16

CPC分类号： H01B1/02 ,  H01B1/026 ,  H01B1/22 ,  H05K3/321 ,  H01L2224/293 ,  H01L2224/29499 ,  H01L2224/83101 ,  H01L2224/83886 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/01322 ,  H01L2924/07811 ,  H05K2201/0218 ,  H05K2203/0307 ,  H05K2203/0425 ,  H05K3/3457 ,  H05K3/4007 ,  Y10T428/12181 ,  Y10T428/12229 ,  Y10T428/2991

摘要： Pastes of dendrite particles coated with an electrically conductive coating are described. A surface is placed in contact with an electrolytic or electroless plating solution. Dendrites are formed on the surface. The dendrites are exposed to another plating solution to plate a coating on the surface of the dendrites. The coated dendrites are removed from the surface to form a powder of coated dendrites. The powder is added to a polymer material to form a paste. The paste is disposed between electrical contacts on adjacent surfaces. The paste is heated to fuse the dendrite surfaces to form a network of fused dendrites which are also fused to the electrical contacts. The paste is further heated to cure the polymer to form electrical interconnections between the electrical contacts on the adjacent surfaces.

摘要翻译： 描述了涂覆有导电涂层的枝晶颗粒的浆料。 将表面放置成与电解或化学镀溶液接触。 树皮在表面形成。 将树突暴露于另一种电镀溶液以在树枝状表面上铺上涂层。 将涂覆的枝晶从表面除去以形成涂覆的树枝状粉末。 将粉末加入到聚合物材料中以形成糊状物。 糊料设置在相邻表面上的电触点之间。 加热糊状物以使枝晶表面熔合以形成融合的枝晶网络，其也与电触点融合。 进一步加热糊料以固化聚合物以在相邻表面上的电接触之间形成电互连。

公开(公告)号：US5830332A

公开(公告)日：1998-11-03

申请号：US781080

申请日：1997-01-09

申请人： Edward D. Babich ,  Alessandro Cesare Callegari ,  Fuad Elias Doany ,  Sampath Purushothaman

发明人： Edward D. Babich ,  Alessandro Cesare Callegari ,  Fuad Elias Doany ,  Sampath Purushothaman

IPC分类号： C23C14/06 ,  C23C14/34 ,  G02B1/10 ,  G03F1/00 ,  G03F1/26 ,  G03F1/32 ,  G03F1/34 ,  H01L21/205

CPC分类号： G03F1/32 ,  C23C14/0605 ,  G03F1/26 ,  G03F1/34

摘要： The present invention relates to a method of reactive sputtering for depositing an amorphous hydrogenated carbon film (a-C:H) from an argon/hydrocarbon/hydrogen/oxygen plasma, preferably an Ar/acetylene-helium/hydrogen/oxygen plasma. Such films are optically transparent in the visible range and partially absorbing at ultraviolet (UV) and deep UV (DUV) wavelengths, in particular, 365, and 248, 193 nm. Moreover, the films produced by the present invention are amorphous, hard, scratch resistant, and etchable by excimer laser ablation or by oxygen reactive ion etch process. Because of these unique properties, these films can be used to form a patterned absorber for UV and DUV single layer attenuated phase shift masks. Film absorption can also be increased such that these films can be used to fabricate conventional photolithographic shadow masks.

摘要翻译： 本发明涉及一种用于从氩/烃/氢/氧等离子体，优选Ar /乙炔 - 氦/氢/氧等离子体沉积无定形氢化碳膜（a-C：H）的反应溅射方法。 这种膜在可见光范围内是光学透明的，并且在紫外（UV）和深紫外（DUV）波长，特别是365和248,193nm处部分吸收。 此外，本发明生产的薄膜是非晶的，硬的，耐划伤的，并且可以通过准分子激光烧蚀或通过氧反应离子蚀刻工艺进行蚀刻。 由于这些独特的性质，这些膜可用于形成用于UV和DUV单层衰减相移掩模的图案化吸收体。 也可以增加膜吸收，使得这些膜可用于制造常规光刻阴影掩模。

公开(公告)号：US5599582A

公开(公告)日：1997-02-04

申请号：US475412

申请日：1995-06-07

申请人： Eleftherios Adamopoulos ,  Jungihl Kim ,  Kang-Wook Lee ,  Tae S. Oh ,  Terrence R. O'Toole ,  Sampath Purushothaman ,  John J. Ritsko ,  Jane M. Shaw ,  Alfred Viehbeck ,  George F. Walker

发明人： Eleftherios Adamopoulos ,  Jungihl Kim ,  Kang-Wook Lee ,  Tae S. Oh ,  Terrence R. O'Toole ,  Sampath Purushothaman ,  John J. Ritsko ,  Jane M. Shaw ,  Alfred Viehbeck ,  George F. Walker

IPC分类号： B32B7/10 ,  B32B15/08 ,  B32B15/088 ,  B32B27/00 ,  C08G73/00 ,  C08G73/10 ,  H01B3/30 ,  H01L21/52 ,  H05K1/03 ,  H05K3/46 ,  B05D5/10

CPC分类号： C08G73/1089 ,  C08G73/1003 ,  C08G73/1007 ,  C08G73/101 ,  H01B3/306 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/31721

摘要： The disclosure describes a multilayer article of manufacture comprising a substrate having adhered to it a terminally unsaturated adhesive polyimide, where the surface of the adhesive opposite the substrate is adhered to a polyimide, the article further characterized in having one set or a plurality of alternating layers of the terminally unsaturated adhesive polyimide and the polyimide. In another embodiment, the article has at least one adhesive polyimide layer adhered to a metal substrate or an electrical circuit component such as an integrated circuit, or means for forming electrical connections in an electrical circuit such as metal conduits on the circuit or a wiring network embedded within a ceramic and/or polymer substrate. A novel adhesive polyimide is also described which is an adhesive polyimide such as ODPA-APB terminated with unsaturated heterocyclic monoamines such as azaadenines, aminobenzotriazoles, aminopurines or aminopyrazolopyrimidines and optionally anhydrides, aminoacetylenes, vinylamines or amino phosphines. The novel polyimide may also contain unsaturated heterocyclic groups in the polymer backbone or chain, either as a partial or complete replacement for the aromatic diamines used in synthesizing the polyimide. This novel adhesive polyimide in this invention acts as an adhesive layer for the polymer-substrate (copper, polymer, glass ceramic) interface as well as a copper diffusion barrier layer for the polymer-copper interface.

摘要翻译： 本公开描述了一种多层制品，其包括粘附到其上的末端不饱和粘合聚酰亚胺的基底，其中与基底相对的粘合剂的表面粘附到聚酰亚胺上，该制品进一步的特征在于具有一组或多个交替层 的末端不饱和粘合聚酰亚胺和聚酰亚胺。 在另一个实施方案中，制品具有粘附到金属基底或诸如集成电路的电路部件的至少一个粘合聚酰亚胺层，或用于在电路中形成电连接的装置，例如电路上的金属管道或布线网络 嵌入在陶瓷和/或聚合物基材内。 还描述了一种新型粘合聚酰亚胺，其是粘合聚酰亚胺，例如用不饱和杂环单胺如氮杂腺嘌呤，氨基苯并三唑，氨基嘌呤或氨基吡唑并嘧啶和任选的酸酐，氨基乙炔，乙烯胺或氨基膦封端的ODPA-APB。 新型聚酰亚胺还可以在聚合物主链或链中含有不饱和杂环基团，作为用于合成聚酰亚胺的芳族二胺的部分或完全替代物。 本发明中的这种新型粘合聚酰亚胺作为聚合物基材（铜，聚合物，玻璃陶瓷）界面的粘合剂层以及用于聚合物 - 铜界面的铜扩散阻挡层。

公开(公告)号：US5470661A

公开(公告)日：1995-11-28

申请号：US1374

申请日：1993-01-07

申请人： Fredric D. Bailey ,  Douglas A. Buchanan ,  Alessandro C. Callegari ,  Howard M. Clearfield ,  Fuad E. Doany ,  Donis G. Flagello ,  Harold J. Hovel ,  Douglas C. Latulipe, Jr. ,  Naftali E. Lustig ,  Andrew T. S. Pomerene ,  Sampath Purushothaman ,  Christopher M. Scherpereel ,  David E. Seeger ,  Jane M. Shaw

发明人： Fredric D. Bailey ,  Douglas A. Buchanan ,  Alessandro C. Callegari ,  Howard M. Clearfield ,  Fuad E. Doany ,  Donis G. Flagello ,  Harold J. Hovel ,  Douglas C. Latulipe, Jr. ,  Naftali E. Lustig ,  Andrew T. S. Pomerene ,  Sampath Purushothaman ,  Christopher M. Scherpereel ,  David E. Seeger ,  Jane M. Shaw

IPC分类号： G03F1/08 ,  C01B31/06 ,  C08J7/06 ,  C23C8/26 ,  C23C8/50 ,  C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C30B29/04 ,  G02B1/10 ,  G11B5/255 ,  H01L21/31 ,  H01L21/314 ,  B24B3/02

CPC分类号： C23C16/26 ,  G02B1/105 ,  G11B5/255 ,  Y10S427/104 ,  Y10S427/106 ,  Y10T428/30

摘要： The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond like carbon films of the present invention are deposited onto the substrate by employing acetylene which is heavily diluted with helium as the plasma gas. The films formed using the process of the present invention are characterized as being amorphous and having dielectric strengths comparable to those normally observed for diamond films. More importantly, however is that the films produced herein are thermally stable, optically transparent, absorbent in the ultraviolet range and hard thus making them extremely desirable for a wide variety of applications.

摘要翻译： 本发明涉及通过来自烃/氦等离子体的低温等离子体增强化学气相沉积（PECVD）将金刚石状碳膜沉积到衬底上的改进方法。 更具体地说，本发明的类金刚石碳膜通过采用氦气作为等离子体气体大量稀释的乙炔沉积在基板上。 使用本发明的方法形成的膜的特征在于是无定形的并且具有与通常对于金刚石膜观察到的那些相当的介电强度。 然而，更重要的是，本文制造的膜是热稳定的，光学透明的，在紫外范围内是吸收性的并且是硬的，从而使得它们对于各种各样的应用是非常需要的。

公开(公告)号：US5296189A

公开(公告)日：1994-03-22

申请号：US874901

申请日：1992-04-28

申请人： Sung K. Kang ,  Sampath Purushothaman ,  John J. Ritsko ,  Jane M. Shaw ,  Subhash L. Shinde

发明人： Sung K. Kang ,  Sampath Purushothaman ,  John J. Ritsko ,  Jane M. Shaw ,  Subhash L. Shinde

IPC分类号： B01F3/18 ,  B22F1/00 ,  B22F9/04 ,  C22C1/10 ,  H05K1/09 ,  B22F7/00

CPC分类号： H05K1/092 ,  B22F9/04 ,  C22C1/1084 ,  B22F2009/043 ,  B22F2999/00

摘要： Methods of fabricating powders of metal particles containing grain growth control additives are described. A powder, metal particles, e.g., copper particles, are mixed with a powder of additive particles, e.g., alumina particles. The mixture is milled in a high energy ball mill to provide metal particles having substantially uniformly distributed therein of additive particles. The ball milled powder contains elongated high aspect ratio particles. The high aspect ratio particles are reduced in size by jet impact milling. The jet impact milled powder can be used to form a conductor forming paste in the fabrication of a metallized ceramic substrate for semiconductor chip packaging application. The jet impact milled powder has particles of sufficiently small in size to fill vias between metallization layers in the green ceramic precursor to the ceramic substrate. During sintering of the combination of ceramic precursor and conductor forming paste, the grain growth control additive results in a substantially void free via filled with metal having a fine grain morphology.

摘要翻译： 描述了制备含有晶粒生长控制添加剂的金属颗粒粉末的方法。 将粉末，金属颗粒（例如铜颗粒）与添加剂颗粒如氧化铝颗粒的粉末混合。 将混合物在高能球磨机中研磨，以提供基本均匀分布有添加剂颗粒的金属颗粒。 球磨粉末含有细长的高纵横比颗粒。 通过喷射冲击研磨，高纵横比颗粒的尺寸减小。 喷射冲击研磨粉末可用于在制造用于半导体芯片封装应用的金属化陶瓷衬底的过程中形成导体形成膏。 喷射冲击研磨的粉末具有足够小的颗粒，以在陶瓷衬底的生坯陶瓷前体中的金属化层之间填充通孔。 在烧结陶瓷前体和导体形成浆料的组合期间，晶粒生长控制添加剂导致填充有具有细晶粒形态的金属的基本上无空隙的通孔。

公开(公告)号：US20150024548A1

公开(公告)日：2015-01-22

申请号：US13572004

申请日：2012-08-10

申请人： Mukta G. Farooq ,  Robert Hannon ,  Subramanian S. Iyer ,  Steven J. Koester ,  Fei Liu ,  Sampath Purushothaman ,  Albert M. Young ,  Roy R. Yu

发明人： Mukta G. Farooq ,  Robert Hannon ,  Subramanian S. Iyer ,  Steven J. Koester ,  Fei Liu ,  Sampath Purushothaman ,  Albert M. Young ,  Roy R. Yu

IPC分类号： H01L25/065 ,  H01L25/00

CPC分类号： H01L25/0657 ,  H01L21/6835 ,  H01L25/18 ,  H01L25/50 ,  H01L2221/68377 ,  H01L2224/0401 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05024 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05558 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/056 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73153 ,  H01L2224/73253 ,  H01L2224/83121 ,  H01L2224/83895 ,  H01L2224/92242 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1433 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/37001 ,  H01L2224/83 ,  H01L2224/11 ,  H01L2924/014 ,  H01L2924/00014

摘要： A computer readable medium is provided that is encoded with a program comprising instructions for performing a method for fabricating a 3D integrated circuit structure. Provided are an interface wafer including a first wiring layer and through-silicon vias, and a first active circuitry layer wafer including active circuitry. The first active circuitry layer wafer is bonded to the interface wafer. Then, a first portion of the first active circuitry layer wafer is removed such that a second portion remains attached to the interface wafer. A stack structure including the interface wafer and the second portion of the first active circuitry layer wafer is bonded to a base wafer. Next, the interface wafer is thinned so as to form an interface layer, and metallizations coupled through the through-silicon vias in the interface layer to the first wiring layer are formed on the interface layer.

摘要翻译： 提供了一种计算机可读介质，其由包含用于执行制造3D集成电路结构的方法的指令的程序编码。 提供了包括第一布线层和穿硅通孔的接口晶片，以及包括有源电路的第一有源电路层晶片。 第一有源电路层晶片被结合到界面晶片。 然后，去除第一有源电路层晶片的第一部分，使得第二部分保持附着到界面晶片。 包括接口晶片和第一有源电路层晶片的第二部分的堆叠结构被结合到基底晶片。 接下来，将界面晶片减薄以形成界面层，并且在界面层上形成通过界面层中的穿硅通孔耦合到第一布线层的金属化。

公开(公告)号：US08738167B2

公开(公告)日：2014-05-27

申请号：US13398481

申请日：2012-02-16

申请人： Mukta G. Farooq ,  Robert Hannon ,  Subramanian S. Iyer ,  Steven J. Koester ,  Sampath Purushothaman ,  Roy R. Yu

发明人： Mukta G. Farooq ,  Robert Hannon ,  Subramanian S. Iyer ,  Steven J. Koester ,  Sampath Purushothaman ,  Roy R. Yu

IPC分类号： G06F19/00 ,  H01L21/30 ,  H01L21/46 ,  H01L23/48 ,  H01L23/52

CPC分类号： H01L27/105 ,  H01L24/11 ,  H01L27/0688 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05024 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599

摘要： A method is provided for fabricating a 3D integrated circuit structure. According to the method, a first active circuitry layer wafer is provided. The first active circuitry layer wafer comprises a P+ portion covered by a P− layer, and the P− layer includes active circuitry. The first active circuitry layer wafer is bonded face down to an interface wafer that includes a first wiring layer, and then the P+ portion of the first active circuitry layer wafer is selectively removed with respect to the P− layer of the first active circuitry layer wafer. Next, a wiring layer is fabricated on the backside of the P− layer. Also provided are a non-transitory computer readable medium encoded with a program for fabricating a 3D integrated circuit structure, and a 3D integrated circuit structure.

摘要翻译： 提供了一种用于制造3D集成电路结构的方法。 根据该方法，提供第一有源电路层晶片。 第一有源电路层晶片包括由P层覆盖的P +部分，并且P层包括有源电路。 第一有源电路层晶片面向下接合到包括第一布线层的接口晶片，然后相对于第一有源电路层晶片的P层选择性地去除第一有源电路层晶片的P +部分 。 接下来，在P-层的背面上制造布线层。 还提供了编码有用于制造3D集成电路结构的程序的非暂时计算机可读介质，以及3D集成电路结构。

公开(公告)号：US08637953B2

公开(公告)日：2014-01-28

申请号：US12172452

申请日：2008-07-14

申请人： Douglas C. La Tulipe, Jr. ,  Sampath Purushothaman ,  James Vichiconti

发明人： Douglas C. La Tulipe, Jr. ,  Sampath Purushothaman ,  James Vichiconti

IPC分类号： H01L21/70

CPC分类号： H01L21/3065 ,  C23C16/402 ,  C23C16/513 ,  C23C16/56 ,  H01L21/02002 ,  H01L21/187 ,  H01L21/3221 ,  H01L21/67063 ,  H01L21/67069 ,  H01L21/6835 ,  H01L21/76251 ,  H01L21/77 ,  H01L24/94 ,  H01L25/00 ,  H01L25/0657 ,  H01L25/50 ,  H01L29/06 ,  H01L2221/68377 ,  H01L2224/83121 ,  H01L2225/06513 ,  H01L2924/01005 ,  H01L2924/01033 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00

摘要： An fabrication of three-dimensional integrated devices and three-dimensional integrated devices fabricated therefrom are described. A device side of a donor wafer is coated with a polymer film and exposure of a substrate side to an oxidizing plasma creates a continuous SiO2 film. Portions of the substrate side are selectively coated with a polymer film and etching of uncoated areas removes at least a substantial portion of the crystalline substrate. A plasma etch tool etches a crystalline substrate to within a pre-determined thickness. The silicon portions of the substrate side are etched by exposure to TMAH. After etching, the donor semiconductor wafer is supported by portions of the substrate that were not etched. The supporting structure allows flexing of the donor semiconductor wafer within the etched areas to enable conformality and reliable bonding to the device surfaces of an acceptor wafer to form a three dimensional integrated device.

摘要翻译： 描述了由其制造的三维集成器件和三维集成器件的制造。 施主晶片的器件侧涂覆有聚合物膜，并且将衬底侧暴露于氧化等离子体产生连续的SiO 2膜。 衬底侧的部分被选择性地涂覆聚合物膜，并且未涂覆区域的蚀刻除去至少大部分结晶衬底。 等离子体蚀刻工具将结晶衬底蚀刻到预定厚度内。 通过暴露于TMAH来蚀刻衬底侧的硅部分。 在蚀刻之后，施主半导体晶片由未被蚀刻的基板的部分支撑。 支撑结构允许施主半导体晶片在蚀刻区域内弯曲，以使得能够与受主晶片的器件表面保持一致并可靠地结合以形成三维集成器件。

公开(公告)号：US08629553B2

公开(公告)日：2014-01-14

申请号：US13398505

申请日：2012-02-16

申请人： Mukta G. Farooq ,  Robert Hannon ,  Subramanian S. Iyer ,  Steven J. Koester ,  Sampath Purushothaman ,  Roy R. Yu

发明人： Mukta G. Farooq ,  Robert Hannon ,  Subramanian S. Iyer ,  Steven J. Koester ,  Sampath Purushothaman ,  Roy R. Yu

IPC分类号： H01L23/34 ,  H01L21/30

CPC分类号： H01L27/105 ,  H01L24/11 ,  H01L27/0688 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05024 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599

摘要： A method is provided for fabricating a 3D integrated circuit structure. According to the method, a first active circuitry layer wafer is provided. The first active circuitry layer wafer comprises a P+ portion covered by a P− layer, and the P− layer includes active circuitry. The first active circuitry layer wafer is bonded face down to an interface wafer that includes a first wiring layer, and then the P+ portion of the first active circuitry layer wafer is selectively removed with respect to the P− layer of the first active circuitry layer wafer. Next, a wiring layer is fabricated on the backside of the P− layer. Also provided are a tangible computer readable medium encoded with a program for fabricating a 3D integrated circuit structure, and a 3D integrated circuit structure.

摘要翻译： 提供了一种用于制造3D集成电路结构的方法。 根据该方法，提供第一有源电路层晶片。 第一有源电路层晶片包括由P层覆盖的P +部分，并且P层包括有源电路。 第一有源电路层晶片面向下接合到包括第一布线层的接口晶片，然后相对于第一有源电路层晶片的P层选择性地去除第一有源电路层晶片的P +部分 。 接下来，在P-层的背面上制造布线层。 还提供了用用于制造3D集成电路结构的程序编码的有形计算机可读介质和3D集成电路结构。