公开(公告)号：US07589346B2

公开(公告)日：2009-09-15

申请号：US11531141

申请日：2006-09-12

申请人： Goshi Biwa ,  Hiroyuki Okuyama

发明人： Goshi Biwa ,  Hiroyuki Okuyama

IPC分类号： H01L33/00

CPC分类号： H01L33/325 ,  H01L24/05 ,  H01L33/0025 ,  H01L33/025 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L2224/04042 ,  H01L2224/05552 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/15788 ,  H01L2924/181 ,  H04N9/3155 ,  H04N9/3164 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A GaN based semiconductor light-emitting device is provided. The light-emitting device includes a first GaN based compound semiconductor layer of an n-conductivity type; an active layer; a second GaN based compound semiconductor layer; an underlying layer composed of a GaN based compound semiconductor, the underlying layer being disposed between the first GaN based compound semiconductor layer and the active layer; and a superlattice layer composed of a GaN based compound semiconductor doped with a p-type dopant, the superlattice layer being disposed between the active layer and the second GaN based compound semiconductor layer.

摘要翻译： 提供了一种GaN基半导体发光器件。 发光器件包括n导电型的第一GaN基化合物半导体层; 活性层 第二GaN基化合物半导体层; 由GaN基化合物半导体构成的下层，下层设置在第一GaN基化合物半导体层和有源层之间; 以及由掺杂有p型掺杂剂的GaN基化合物半导体构成的超晶格层，所述超晶格层设置在所述有源层和所述第二GaN基化合物半导体层之间。

公开(公告)号：US20080315625A1

公开(公告)日：2008-12-25

申请号：US12141494

申请日：2008-06-18

申请人： Susumu Suzuki ,  Nobuhiro Iwai ,  Taro Ikeda ,  Naoki Tanaka ,  Hiroyuki Okuyama ,  Michiaki Okabe ,  Tsuyoshi Iwasaki ,  Toru Mogi ,  Koji Ishimaru ,  Takashi Ashida

发明人： Susumu Suzuki ,  Nobuhiro Iwai ,  Taro Ikeda ,  Naoki Tanaka ,  Hiroyuki Okuyama ,  Michiaki Okabe ,  Tsuyoshi Iwasaki ,  Toru Mogi ,  Koji Ishimaru ,  Takashi Ashida

IPC分类号： B62D25/08

CPC分类号： B60Q1/0491 ,  B60Q1/0441 ,  B62D25/163

摘要： A structure to couple exterior components of a vehicle includes a first exterior component and a second exterior component located apart from the first exterior component, wherein the first exterior component comprises an upper protrusion configured to overlap the second exterior component, and wherein the first exterior component comprises a side protrusion configured to overlap the second exterior component. A method to couple exterior components of a vehicle includes providing a protrusion about at least a portion of a first exterior component, installing the first exterior component proximal to a second exterior component, overlapping the protrusion of the first exterior component about a at least a portion of the second exterior component, interposing an elastic member between a peripheral surface of the first exterior component and an edge of the second exterior component, and positioning the elastic member beneath the protrusion of the first exterior component.

摘要翻译： 耦合车辆外部部件的结构包括第一外部部件和与第一外部部件分开的第二外部部件，其中第一外部部件包括被配置为与第二外部部件重叠的上部突起，并且其中第一外部部件 包括配置成与第二外部部件重叠的侧部突起。 耦合车辆外部部件的方法包括提供围绕第一外部部件的至少一部分的突出部，将第一外部部件安装在靠近第二外部部件的位置，与第一外部部件的突起重叠，至少部分 在所述第二外部部件的外周表面和所述第二外部部件的边缘之间插入弹性部件，并且将所述弹性部件定位在所述第一外部部件的突出部下方。

公开(公告)号：US07468528B2

公开(公告)日：2008-12-23

申请号：US11329589

申请日：2006-01-10

申请人： Jun Suzuki ,  Masato Doi ,  Hiroyuki Okuyama ,  Goshi Biwa

发明人： Jun Suzuki ,  Masato Doi ,  Hiroyuki Okuyama ,  Goshi Biwa

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  Y10S257/918

摘要： A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes a laminated semiconductor structure portion composed of at least a first conductivity type first cladding layer, an active layer and a second conductivity type second cladding layer, wherein an outer peripheral surface of this laminated semiconductor structure portion is formed as a curved surface shape which is protrusively curved or bent with respect to the outside of the laminated direction.

摘要翻译： 提供了一种半导体发光器件。 半导体发光装置包括由至少第一导电型第一包层，有源层和第二导电型第二包层构成的层叠半导体结构部，其中，该层叠半导体结构部的外周面形成为 相对于层叠方向的外侧突出地弯曲或弯曲的曲面形状。

公开(公告)号：US07364805B2

公开(公告)日：2008-04-29

申请号：US10466607

申请日：2002-01-18

申请人： Etsuo Morita ,  Yousuke Murakami ,  Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

发明人： Etsuo Morita ,  Yousuke Murakami ,  Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

IPC分类号： B32B9/00 ,  B63H1/26 ,  H01L21/31

CPC分类号： H01L21/02538 ,  C30B25/02 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265

摘要： A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.

摘要翻译： 使用具有位错的晶体基底来获得位错密度低的晶体膜，晶体基板和半导体器件。 生长衬底（11）的一侧设置有在其间具有缓冲层（12）的晶体层（13）。 晶体层（13）在从下方延伸的每个穿透位错D 1 1的末端具有间隔（13a），（13b）。 穿透位错D 1＆lt; 1＆gt;通过空间（13a），（13b）从上层分离，使得每个穿透位错D 1 1被阻止传播到 上层。 当由汉堡矢量表示的穿透位错D 1 1的位移被保留以产生另一位错时，空间（13a），（13b）改变其位移的方向。 结果，空间（13a），（13b）上方的上层以低位错密度变为结晶。

公开(公告)号：US20070285525A1

公开(公告)日：2007-12-13

申请号：US11451524

申请日：2006-06-12

申请人： Hiroyuki Okuyama

发明人： Hiroyuki Okuyama

IPC分类号： H04N5/228

CPC分类号： H04N1/6027

摘要： An image forming apparatus according to the invention is characterized by including; an input unit that inputs first color data; a first color converting unit that converts the first color data into a black single color data; a second color converting unit that converts the first color data into second color data; a brightness correcting unit that corrects brightness of the black single color data such that brightness of the black single color data converted by the first color converting unit is equal to brightness of the second color data converted by the second color converting unit; and an image forming unit that prints image data on a recording medium. According to the image forming apparatus, in the image forming apparatus that uses both color conversion processing and black conversion processing, even if image data continuously changes from a chromatic color to an achromatic color, it is possible to reduce “brightness discontinuity”.

摘要翻译： 根据本发明的图像形成装置的特征在于包括： 输入单元，其输入第一颜色数据; 第一颜色转换单元，其将第一颜色数据转换为黑色单色数据; 第二颜色转换单元，其将所述第一颜色数据转换为第二颜色数据; 亮度校正单元，其校正黑色单色数据的亮度，使得由第一颜色转换单元转换的黑色单色数据的亮度等于由第二颜色转换单元转换的第二颜色数据的亮度; 以及在记录介质上打印图像数据的图像形成单元。 根据图像形成装置，在使用颜色转换处理和黑色转换处理的图像形成装置中，即使图像数据从彩色颜色连续变化为无彩色，也可以减少“亮度不连续”。

公开(公告)号：US20070187704A1

公开(公告)日：2007-08-16

申请号：US11691299

申请日：2007-03-26

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/24 ,  H01L33/32 ,  H01L2224/48137

摘要： A semiconductor light emitting element, manufacturing method. thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided. An n-type GaN layer is grown on a sapphire substrate, and a growth mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined crystal planes each composed of a plurality of crystal planes inclined from the major surface of the sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side electrode and an n-side electrode are formed.

摘要翻译： 半导体发光元件，制造方法。 提供集成半导体发光器件，其制造方法，照明器件及其制造方法。 在蓝宝石衬底上生长n型GaN层，例如在其上形成SiN的生长掩模。 在通过生长掩模中的开口暴露的n型GaN层上，选择性地生长六边形尖状n型GaN层，其倾斜晶面各自由从主表面倾斜的多个晶面构成 的蓝宝石衬底，通过不同的倾斜角度整体呈现凸面。 在n型GaN层上生长有源层和p型GaN层以制成发光元件结构。 此后，形成p侧电极和n侧电极。

公开(公告)号：US07236263B2

公开(公告)日：2007-06-26

申请号：US10259857

申请日：2002-09-30

申请人： Hiroyuki Okuyama

发明人： Hiroyuki Okuyama

IPC分类号： H04N1/60 ,  H04N1/40 ,  G06K15/00

CPC分类号： H04N1/6022

摘要： A system and method for processing image data generates color image data from a scanned image, the color image data including RGB data, converts the RGB data to CMY data, and translates the CMY data for the pixel to CMYK data. A weighting coefficient is set for a pixel based on the values of the CMY data for the pixel. A particular region in which the pixel is located is identified as a black color region or a non-black color region. The value of the K data for the pixel is altered based on the weighting coefficient if the particular region is a non-black color region.

摘要翻译： 用于处理图像数据的系统和方法从扫描图像生成彩色图像数据，包括RGB数据的彩色图像数据将RGB数据转换为CMY数据，并将该像素的CMY数据转换为CMYK数据。 基于像素的CMY数据的值为像素设置加权系数。 将像素所位于的特定区域识别为黑色区域或非黑色区域。 如果特定区域是非黑色区域，则基于加权系数改变像素的K数据的值。

公开(公告)号：US20070070466A1

公开(公告)日：2007-03-29

申请号：US11234137

申请日：2005-09-26

申请人： Hiroyuki Okuyama

发明人： Hiroyuki Okuyama

IPC分类号： G03F3/08

CPC分类号： H04N1/46 ,  H04N2201/326

摘要： An image forming apparatus includes a color print section configured to make a color printing and a changing section configured to, when color data is printed by the color printer section, allow changing to a subtractive color printing or not according to attribute information.

摘要翻译： 图像形成装置包括：彩色打印部，被配置为进行彩色打印;以及变更部，被配置为当由彩色打印机部打印彩色数据时，根据属性信息允许进行减色打印。

公开(公告)号：US07122825B2

公开(公告)日：2006-10-17

申请号：US11093795

申请日：2005-03-30

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC分类号： H01L29/20 ,  H01L31/36

CPC分类号： H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

摘要： Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

公开(公告)号：US20060210290A1

公开(公告)日：2006-09-21

申请号：US11371412

申请日：2006-03-09

申请人： Hiroyuki Okuyama

发明人： Hiroyuki Okuyama

IPC分类号： G03G15/00

CPC分类号： G03G15/5025

摘要： An image forming apparatus according to embodiments of the invention includes: a reading unit that reads an image to generate original image data; an image-quality control unit that controls the image quality of the generated original image data; a file generating unit that generates an electronic file containing intermediate image data in an appropriate intermediate stage of the image-quality control and attribute information containing image-quality parameters for the image-quality control; an interface that exchanges the generated electronic file with an external device; and a recording unit that prints the image on the basis of the intermediate image data and the attribute information input from the external device via the interface.

摘要翻译： 根据本发明的实施例的图像形成装置包括：读取单元，其读取图像以生成原始图像数据; 图像质量控制单元，其控制所生成的原始图像数据的图像质量; 文件生成单元，其在图像质量控制的适当的中间阶段生成包含中间图像数据的电子文件，以及包含图像质量控制的图像质量参数的属性信息; 与外部设备交换生成的电子文件的接口; 以及记录单元，其经由所述界面基于所述中间图像数据和从所述外部设备输入的属性信息来打印所述图像。