公开(公告)号：US07000419B1

公开(公告)日：2006-02-21

申请号：US10070579

申请日：2000-09-11

申请人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Masaki Hirayama ,  Hideo Hanaoka ,  Takeshi Honma ,  Hirokazu Suzuki ,  Yoshio Yamazaki ,  Yoshinori Ohkubo

发明人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Masaki Hirayama ,  Hideo Hanaoka ,  Takeshi Honma ,  Hirokazu Suzuki ,  Yoshio Yamazaki ,  Yoshinori Ohkubo

IPC分类号： F24F3/16 ,  F25D2/10

CPC分类号： F24F13/222 ,  F24F11/41 ,  F25D21/14

摘要： The present invention has an object to comprise an apparatus for high efficiency gas temperature and humidity adjustment and an adjustment method allowing to elevate the heat exchange efficiency of a cooling coil, reduce the cooling water quantity, lower also the pipe arrangement diameter and water supply pump power, making possible to cut the initial cost and running cost of the air-conditioning system.The apparatus for high efficiency gas temperature and humidity adjustment is characterized by that means for removing condensate water deposited on the cooling coil.

摘要翻译： 本发明的目的是提供一种用于高效率气体温度和湿度调节的装置和一种允许提高冷却盘管的热交换效率的调节方法，降低冷却水量，降低管道排放直径和供水泵 电力，有可能降低空调系统的初始成本和运行成本。

公开(公告)号：US20060017101A1

公开(公告)日：2006-01-26

申请号：US11182026

申请日：2005-07-15

申请人： Tadahiro Ohmi ,  Koji Kotani ,  Kazuyuki Maruo ,  Takahiro Yamaguchi

发明人： Tadahiro Ohmi ,  Koji Kotani ,  Kazuyuki Maruo ,  Takahiro Yamaguchi

IPC分类号： H01L29/76

CPC分类号： H01L27/12 ,  H01L21/8221 ,  H01L27/0688 ,  Y10S257/903

摘要： There is provided a small-type semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a first semiconductor layer, a first semiconductor layer transistor formed in the first semiconductor layer, a wiring layer which is deposited on the first semiconductor layer and in which metal wires are formed, a second semiconductor layer deposited on the wiring layer and a second semiconductor layer transistor formed in the second semiconductor layer. It is noted that insulation of a gate insulating film of the first semiconductor layer transistor is almost equal with that of a gate insulating film of the second semiconductor layer transistor and the gate insulating film of the second semiconductor layer transistor is formed by means of radical oxidation or radical nitridation.

摘要翻译： 提供电路面积小，布线长度短的小型半导体集成电路。 半导体集成电路构造为多层结构，并且设置有第一半导体层，形成在第一半导体层中的第一半导体层晶体管，布置在第一半导体层上并且其中金属线为 形成，沉积在布线层上的第二半导体层和形成在第二半导体层中的第二半导体层晶体管。 注意，第一半导体层晶体管的栅极绝缘膜的绝缘几乎等于第二半导体层晶体管的栅极绝缘膜的绝缘，并且通过自由基氧化形成第二半导体层晶体管的栅极绝缘膜 或自由基氮化。

公开(公告)号：US06964279B2

公开(公告)日：2005-11-15

申请号：US10469151

申请日：2002-11-22

申请人： Tadahiro Ohmi ,  Tomio Uno ,  Osamu Nakamura ,  Nobukazu Ikeda ,  Ryousuke Dohi ,  Kouji Nishino ,  Atsushi Matsumoto ,  Kazuhiko Sugiyama ,  Shujiro Inui ,  Taiji Sakai ,  Masanori Ueyama

发明人： Tadahiro Ohmi ,  Tomio Uno ,  Osamu Nakamura ,  Nobukazu Ikeda ,  Ryousuke Dohi ,  Kouji Nishino ,  Atsushi Matsumoto ,  Kazuhiko Sugiyama ,  Shujiro Inui ,  Taiji Sakai ,  Masanori Ueyama

IPC分类号： G01F1/00 ,  G01F1/36 ,  G01F1/42 ,  G05D7/06

CPC分类号： G05D7/0635 ,  Y10T137/7759 ,  Y10T137/7761

摘要： A pressure-type flow rate control apparatus controls the flow rate of fluid passing through an orifice to a target flow rate. The flow rate of a compressible fluid under non-critical conditions (sub-sonic) passing through the orifice is calculated by: Qc=KP2m(P1−P2)n so that the flow rate can be controlled to the target flow rate with high precision and speed. Also provided is an improved pressure-type flow rate control apparatus in which a pressure ratio P2/P1=r, obtained from an upstream pressure P1 and a downstream pressure P2 is constantly compared with a critical value r, and under critical conditions (r≦rc), the flow rate is calculated by: Qc=KP1. Under non-critical conditions (r>rc), the flow rate is calculated by Qc=KP2m(P1−P2)n.

摘要翻译： 压力式流量控制装置将通过孔口的流体的流量控制为目标流量。 通过孔口的非临界条件（亚音）的可压缩流体的流量通过以下公式计算：<？in-line-formula description =“In-line Formulas”end =“lead”？> Qc = KP （P 1→P 2） -formulae description =“在线公式”end =“tail”？>，可以以高精度和高速度将流量控制在目标流量上。 还提供了一种改进的压力型流量控制装置，其中从上游压力P 1获得的压力比P 2 / P 1 / / SUB>和下游压力P 2 2不断与临界值r进行比较，在临界条件（r≤Rc c）下，流量由下式计算： ：<？in-line-formula description =“In-line Formulas”end =“lead”？> Qc = KP <1> <？in-line-formula description =“In-line Formulas” end =“tail”？>在非关键条件下（r> r> c ），流量通过Qc = KP 2 / （P 1→P 2）。

公开(公告)号：US06929830B2

公开(公告)日：2005-08-16

申请号：US10449106

申请日：2003-06-02

申请人： Goushu Tei ,  Nobuyoshi Tanaka ,  Tadahiro Ohmi ,  Masaki Hirayama

发明人： Goushu Tei ,  Nobuyoshi Tanaka ,  Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/511 ,  H01J37/32 ,  B05D5/06 ,  C03C17/245 ,  H05H1/46

CPC分类号： C23C16/45565 ,  C23C16/511 ,  H01J37/32192

摘要： A method for treating a non-planar surface of an object by employing a plasma treatment apparatus in which a microwave dielectric has a non-planar surface corresponding to the surface of the object. A method for forming an optical part is also provided.

摘要翻译： 一种通过采用等离子体处理装置处理物体的非平面表面的方法，其中微波介电体具有对应于物体表面的非平面表面。 还提供了一种用于形成光学部件的方法。

公开(公告)号：US20050163389A1

公开(公告)日：2005-07-28

申请号：US10507378

申请日：2002-09-19

申请人： Tadahiro Ohmi ,  Yukihiko Yokoyama ,  Masahiro Konda ,  Takahiro Nakayama

发明人： Tadahiro Ohmi ,  Yukihiko Yokoyama ,  Masahiro Konda ,  Takahiro Nakayama

IPC分类号： G06T9/00 ,  H04N7/26 ,  H04N7/28 ,  H04N7/46 ,  G06K9/36

CPC分类号： G06T9/008 ,  H04N19/103 ,  H04N19/13 ,  H04N19/147 ,  H04N19/15 ,  H04N19/172 ,  H04N19/192 ,  H04N19/59 ,  H04N19/90 ,  H04N19/91 ,  H04N19/94 ,  H04N19/99

摘要： Input image data inputted in an image block of m pixels×n pixels is changed in the size of the image block; image data of the image block changed in size is subjected to compression processing; compressed image data obtained by the compression processing is subjected to expansion processing to generate restored image data in the m-pixel×n-pixel image block; and whether or not the size of the image block is further changed is judged based on the strength of the correlation between the restored image data and the input image data. The compression processing is performed on the image data while change in size of the image block is repeated until the correlation between the restored image data and the input image data is strong, thereby making it possible to perform compression processing on the image data of the input image at a high compression ratio while maintaining the image quality of the restored image.

摘要翻译： 在m像素×n像素的图像块中输入的输入图像数据在图像块的大小上改变; 尺寸变化的图像块的图像数据进行压缩处理; 对通过压缩处理获得的压缩图像数据进行扩展处理，以生成m像素像素图像块中的恢复图像数据; 并且基于恢复的图像数据和输入图像数据之间的相关强度来判断图像块的尺寸是否进一步改变。 对图像数据执行压缩处理，同时重复图像块的尺寸的改变直到恢复的图像数据和输入图像数据之间的相关性变强，从而可以对输入的图像数据进行压缩处理 在高压缩比下保持图像的图像质量。

公开(公告)号：US06899787B2

公开(公告)日：2005-05-31

申请号：US10173340

申请日：2002-06-14

申请人： Akira Nakano ,  Shintaro Asuke ,  Takeshi Miyashita ,  Tadahiro Ohmi

发明人： Akira Nakano ,  Shintaro Asuke ,  Takeshi Miyashita ,  Tadahiro Ohmi

IPC分类号： H05H1/26 ,  C23C16/00 ,  C23F1/00 ,  H01J37/32 ,  H05H1/30 ,  H05H1/46 ,  H05H1/00

CPC分类号： H01J37/32082 ,  H01J37/32183

摘要： A plasma processing unit has two electrodes for exciting a plasma, a plasma processing chamber, an RF generator, a matching circuit for performing impedance matching between the plasma processing chamber and the RF generator, a feeder that connects an output terminal of the matching circuit to one of the electrode, and a supplier that connects the RF generator to an input terminal of the matching circuit. The feeder is arranged to decrease the average density per unit volume of the RF power supplied from the RF generator as the RF power flows from the output terminal of the matching circuit to the electrode. The section of the plasma processing unit that is DC-grounded has a surface provided with a low-resistance portion. The supplier or the feeder is fixed on a floor using RF impedance adjustors so as to prevent the RF impedance therein from changing.

摘要翻译： 等离子体处理单元具有用于激发等离子体的两个电极，等离子体处理室，RF发生器，用于在等离子体处理室和RF发生器之间执行阻抗匹配的匹配电路，将匹配电路的输出端连接到 电极之一和将RF发生器连接到匹配电路的输入端的供应商。 馈送器布置成当RF功率从匹配电路的输出端流向电极时，降低从RF发生器提供的RF功率的每单位体积的平均密度。 直流接地的等离子体处理单元的部分具有设置有低电阻部分的表面。 供应商或馈线使用RF阻抗调节器固定在地板上，以防止其中的RF阻抗发生变化。

公开(公告)号：US06871803B1

公开(公告)日：2005-03-29

申请号：US10048597

申请日：2000-06-05

申请人： Tadahiro Ohmi ,  Kouji Nishino ,  Nobukazu Ikeda ,  Michio Yamaji ,  Ryousuke Dohi ,  Eiji Ideta ,  Takashi Hirose

发明人： Tadahiro Ohmi ,  Kouji Nishino ,  Nobukazu Ikeda ,  Michio Yamaji ,  Ryousuke Dohi ,  Eiji Ideta ,  Takashi Hirose

IPC分类号： F04F1/08 ,  F16K7/14 ,  F16K7/16 ,  F16K25/00 ,  F16K27/00 ,  F16K31/02 ,  F16K47/00 ,  H04B17/00 ,  H04W4/22 ,  H04W48/12 ,  H04W74/08 ,  B05B1/00 ,  B05B1/30 ,  F02M47/02

CPC分类号： F16K25/005 ,  F16K7/14 ,  F16K7/16 ,  F16K27/00 ,  H04W4/90 ,  H04W48/12 ,  H04W74/006 ,  H04W74/0833 ,  H04W76/50

摘要： A valve with an integral orifice for use in gas feeding equipment provided with a pressure-type flow volume control device to be employed for manufacturing of semi-conductors and chemical goods. The valve with an integral orifice has the excellent flow rate control characteristics by improving the processing accuracy of the orifice and preventing the distortion of the orifice at the time of assembling. The orifice is formed in a stainless steel made orifice disc. The metal-made orifice disc with the orifice formed by separate processing and the synthetic-resin-made valve seat body are removably assembled, wherein the orifice disc and the synthetic resin made valve seat body are fixed airtight to the valve main body by pressing the valve seat body via a metal inner disc.

摘要翻译： 具有用于气体供给设备的整体孔口的阀，其具有用于制造半导体和化学制品的压力型流量控制装置。 具有整体孔的阀具有优异的流量控制特性，通过提高喷嘴的加工精度并防止在组装时孔口的变形。 孔口形成为不锈钢制的孔盘。 具有通过分离处理形成的孔的金属制孔口盘和合成树脂制的阀座体可拆卸地组装，其中孔板和合成树脂制成的阀座体通过压制阀座而被气密地固定到阀主体 阀座主体经由金属内盘。

公开(公告)号：US06866747B2

公开(公告)日：2005-03-15

申请号：US10843004

申请日：2004-05-10

申请人： Takamitsu Tadera ,  Tatsushi Yamamoto ,  Masaki Hirayama ,  Tadahiro Ohmi

发明人： Takamitsu Tadera ,  Tatsushi Yamamoto ,  Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： H05H1/46 ,  B23K10/00 ,  C23C16/511 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/30 ,  H05H1/00 ,  C23C16/00

CPC分类号： B23K10/003 ,  B23K2101/40

摘要： On one side of a microwave entrance window that is exposed to the atmosphere, a slot plate having slots and a resonant unit are provided. The slot plate and the resonant unit are integrally placed to be slidable by linear guides with respect to a process chamber. In this way, a plasma processing apparatus can be provided that performs a highly uniform plasma process and is excellent in terms of plasma generation property.

摘要翻译： 在暴露于大气的微波入口窗的一侧，设有具有狭缝的槽板和谐振单元。 槽板和谐振单元整体地放置成可以通过线性导轨相对于处理室滑动。 以这种方式，可以提供执行高度均匀的等离子体处理的等离子体处理装置，并且在等离子体产生性方面是优异的。

公开(公告)号：US20050042869A1

公开(公告)日：2005-02-24

申请号：US10467820

申请日：2002-12-10

申请人： Tadahiro Ohmi ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： C23C16/56 ,  C23C8/36 ,  C23C16/02 ,  C23C16/511 ,  H01J37/32 ,  H01L21/31 ,  H01L21/314 ,  H01L21/318 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02247 ,  C23C8/36 ,  H01J37/321 ,  H01J37/32357 ,  H01L21/02252 ,  H01L21/3143 ,  H01L21/318

摘要： In a substrate processing apparatus, a control electrode (131) separates a process space (11C) including a substrate to be processed and a plasma formation space (11B) not including the substrate. The control electrode includes a conductive member formed in a processing vessel and having a plurality of apertures (131a) for passing plasma. A surface of the control electrode is covered by an aluminum oxide or a conductive nitride. In the substrate processing apparatus, a gas containing He and N2 is supplied into the processing vessel. In the plasma formation space, there is formed plasma under a condition in which atomic state nitrogen N* are excited. The atomic state nitrogen N* are used to nitride a surface of the substrate.

摘要翻译： 在衬底处理设备中，控制电极（131）分离包括待处理衬底和不包括衬底的等离子体形成空间（11B）的工艺空间（11C）。 控制电极包括形成在处理容器中并具有用于通过等离子体的多个孔（131a）的导电构件。 控制电极的表面被氧化铝或导电氮化物覆盖。 在基板处理装置中，将含有He和N2的气体供给到处理容器中。 在等离子体形成空间中，在原子态氮N *被激发的条件下形成等离子体。 原子态氮N *用于氮化衬底的表面。

公开(公告)号：US20050000440A1

公开(公告)日：2005-01-06

申请号：US10811034

申请日：2004-08-27

申请人： Akira Nakano ,  Tadahiro Ohmi

发明人： Akira Nakano ,  Tadahiro Ohmi

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C16/509 ,  C23C16/52 ,  C23C16/54 ,  H01J37/32 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/66 ,  H05H1/36 ,  C23C16/00

CPC分类号： H01L22/20 ,  C23C16/5096 ,  C23C16/54 ,  H01J37/32082 ,  H01L2924/0002 ,  H01L2924/014 ,  H01L2924/00

摘要： A plasma processing apparatus comprising a plurality of plasma processing units is provided. Each of the plasma processing units has a matching circuit connected between a radiofrequency generator and a plasma excitation electrode. Among these plasma processing units, a variation between the maximum and minimum values of input-terminal-side AC resistances RA of the matching circuits defined by =(RAmax−RAmin)/(RAmax+RAmin) is adjusted to be less than 0.5. A variation between the maximum and minimum values of output-terminal-side AC resistances RB of the matching circuits defined by =(RBmax−RBmin)./(RBmax+RBmin) is also adjusted to be less than 0.5. The plasma processing units can be adjusted to achieve substantially uniform plasma results in a shorter period of time.

摘要翻译： 提供包括多个等离子体处理单元的等离子体处理装置。 每个等离子体处理单元具有连接在射频发生器和等离子体激励电极之间的匹配电路。 在这些等离子体处理单元中，由RA> =（RAmax-RAmin）/（RAmax + RAmin）定义的匹配电路的输入端侧AC电阻RA的最大值和最小值之间的变化值RA被调整为 小于0.5。 由 =（RBmax-RBmin）./（RBmax + RBmin）定义的匹配电路的输出端侧AC电阻RB的最大值和最小值之间的变化也被调整为小于0.5。 可以调节等离子体处理单元以在更短的时间内实现基本均匀的等离子体结果。