公开(公告)号：US20090134456A1

公开(公告)日：2009-05-28

申请号：US11921085

申请日：2006-05-25

申请人： Masahiro Sugimoto ,  Tetsu Kachi ,  Tsutomu Uesugi ,  Hiroyuki Ueda ,  Narumasa Soejima

发明人： Masahiro Sugimoto ,  Tetsu Kachi ,  Tsutomu Uesugi ,  Hiroyuki Ueda ,  Narumasa Soejima

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/207 ,  H01L29/0623 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/7788 ,  H01L29/7828 ,  H01L29/7832

摘要： The present invention aims to suppress the diffusion of p-type impurities (typically magnesium), included in a semiconductor region of a III-V compound semiconductor, into an adjoining different semiconductor region. A semiconductor device 10 of the present invention comprises a first semiconductor region 28 of gallium nitride (GaN) including p-type impurities that consist of magnesium, a second semiconductor region 34 of gallium nitride, and an impurity diffusion suppression layer 32 of silicon oxide (SiO2) located between the first semiconductor region 28 and the second semiconductor region 34.

摘要翻译： 本发明旨在抑制包含在III-V族化合物半导体的半导体区域中的p型杂质（通常为镁）扩散到邻接的不同半导体区域中。 本发明的半导体器件10包括由镁构成的p型杂质，氮化镓的第二半导体区域34和氧化硅的杂质扩散抑制层32的氮化镓（GaN）的第一半导体区域28（ SiO 2），位于第一半导体区域28和第二半导体区域34之间。

公开(公告)号：US4742007A

公开(公告)日：1988-05-03

申请号：US702560

申请日：1985-02-15

申请人： Kuniki Kino ,  Toshihide Nakanishi ,  Masahiro Sugimoto

发明人： Kuniki Kino ,  Toshihide Nakanishi ,  Masahiro Sugimoto

IPC分类号： C12P13/22 ,  C12R1/15 ,  C12N1/20

CPC分类号： C12R1/15 ,  C12P13/227 ,  Y10S435/843

摘要： L-tryptophan can be prepared in good yield by a fermentation process which comprises culturing a novel L-tryptophan-producing microorganism of the genus Corynebacterium, which is resistant to at least one member selected from glyphosate [N-phosphonomethyl glycine], paraquat [1,1'-dimethyl-4,4'-bispyridinium] and derivatives thereof, and recovering L-tryptophan from the culture broth.

摘要翻译： 可以通过发酵方法以良好的产率制备L-色氨酸，其包括培养棒状杆菌属的新型L-色氨酸生产微生物，其对选自草甘膦[N-膦酰基甲基甘氨酸]，百草枯[1 ，1'-二甲基-4,4'-二吡啶鎓]及其衍生物，并从培养液中回收L-色氨酸。

公开(公告)号：US4725878A

公开(公告)日：1988-02-16

申请号：US844943

申请日：1986-03-27

申请人： Akira Miyauchi ,  Hiroshi Nishimoto ,  Tadashi Okiyama ,  Hiroo Kitasagami ,  Masahiro Sugimoto ,  Haruo Tamada ,  Shinji Emori

发明人： Akira Miyauchi ,  Hiroshi Nishimoto ,  Tadashi Okiyama ,  Hiroo Kitasagami ,  Masahiro Sugimoto ,  Haruo Tamada ,  Shinji Emori

IPC分类号： H01L23/057 ,  H01L23/48 ,  H01L23/498 ,  H01L23/66 ,  H05K1/02 ,  H05K1/18 ,  H05K3/32 ,  H05K3/34 ,  H01L39/02

CPC分类号： H01L23/66 ,  H01L23/057 ,  H01L23/49822 ,  H01L24/49 ,  H05K1/0243 ,  H01L2223/6627 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48235 ,  H01L2224/49109 ,  H01L2224/49171 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15174 ,  H01L2924/16195 ,  H01L2924/1903 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H05K1/0219 ,  H05K1/0237 ,  H05K1/182 ,  H05K1/184 ,  H05K2201/09236 ,  H05K2201/10409 ,  H05K2201/10689 ,  H05K2201/10969 ,  H05K3/325 ,  H05K3/3421

摘要： A semiconductor device provided with signal lines which connect a chip, provided at a top portion of a package, with external terminals provided at a bottom portion of the package. The signal lines have portions formed along side surfaces of the package. Ground surfaces are formed at predetermined distances on two sides of the high-speed signal lines. A coplanar waveguide is formed by the high-speed signal lines and the ground surfaces, so the impedance of vertical portions of the high-speed signal lines is matched to the circuits connected thereto.

公开(公告)号：US4097428A

公开(公告)日：1978-06-27

申请号：US800925

申请日：1977-05-26

申请人： Takashi Nara ,  Ryo Okachi ,  Mitsuyoshi Yamamoto ,  Yasuki Mori ,  Moriyuki Sato ,  Masahiro Sugimoto ,  Yoshiaki Shimizu

发明人： Takashi Nara ,  Ryo Okachi ,  Mitsuyoshi Yamamoto ,  Yasuki Mori ,  Moriyuki Sato ,  Masahiro Sugimoto ,  Yoshiaki Shimizu

IPC分类号： C07H15/224 ,  C07D309/22

CPC分类号： C07H15/224

摘要： A new antibiotic, Fortimicin C, is produced by fermentation of a microorganism belonging to the genus Micromonospora. The antibiotic is accumulated in the culture medium and is isolated therefrom.

摘要翻译： 一种新的抗生素Fortimicin C是通过发酵属于小单孢菌属的微生物产生的。 抗生素在培养基中积聚并从中分离。

公开(公告)号：US09818860B2

公开(公告)日：2017-11-14

申请号：US15365150

申请日：2016-11-30

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Akitaka Soeno ,  Jun Morimoto

发明人： Yuichi Takeuchi ,  Naohiro Suzuki ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Akitaka Soeno ,  Jun Morimoto ,  Narumasa Soejima ,  Yukihiko Watanabe

IPC分类号： H01L29/78 ,  H01L29/16 ,  H01L21/82 ,  H01L29/417 ,  H01L29/66 ,  H01L29/10 ,  H01L29/872 ,  H01L21/04 ,  H01L21/306 ,  H01L21/308 ,  H01L29/423 ,  H01L21/761 ,  H01L29/15 ,  H01L29/06 ,  H01L29/08 ,  H01L29/861

CPC分类号： H01L29/7811 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/761 ,  H01L21/8213 ,  H01L29/0615 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/157 ,  H01L29/158 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/872

摘要： An SiC semiconductor device has a p type region including a low concentration region and a high concentration region filled in a trench formed in a cell region. A p type column is provided by the low concentration region, and a p+ type deep layer is provided by the high concentration region. Thus, since a SJ structure can be made by the p type column and the n type column provided by the n type drift layer, an on-state resistance can be reduced. As a drain potential can be blocked by the p+ type deep layer, at turnoff, an electric field applied to the gate insulation film can be alleviated and thus breakage of the gate insulation film can be restricted. Therefore, the SiC semiconductor device can realize the reduction of the on-state resistance and the restriction of breakage of the gate insulation film.

公开(公告)号：US09184271B2

公开(公告)日：2015-11-10

申请号：US12822328

申请日：2010-06-24

申请人： Masahiro Sugimoto ,  Tetsu Kachi ,  Yoshitaka Nakano ,  Tsutomu Uesugi ,  Hiroyuki Ueda ,  Narumasa Soejima

发明人： Masahiro Sugimoto ,  Tetsu Kachi ,  Yoshitaka Nakano ,  Tsutomu Uesugi ,  Hiroyuki Ueda ,  Narumasa Soejima

IPC分类号： H01L29/778 ,  H01L29/66 ,  H01L21/28 ,  H01L29/20

CPC分类号： H01L29/778 ,  H01L21/28 ,  H01L29/2003 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

摘要： A semiconductor device has a stacked structure in which a p-GaN layer, an SI-GaN layer, and an AlGaN layer are stacked, and has a gate electrode that is formed at a top surface side of the AlGaN layer. A band gap of the AlGaN layer is wider than a band gap of the p-GaN layer and the SI-GaN layer. Moreover, impurity concentration of the SI-GaN layer is less than 1×1017 cm−3. Semiconductor devices including III-V semiconductors may have a stable normally-off operation.

摘要翻译： 半导体器件具有其中堆叠p-GaN层，SI-GaN层和AlGaN层的堆叠结构，并且具有形成在AlGaN层的顶表面侧的栅电极。 AlGaN层的带隙比p-GaN层和SI-GaN层的带隙宽。 此外，SI-GaN层的杂质浓度小于1×1017cm-3。 包括III-V半导体的半导体器件可以具有稳定的常关断操作。

公开(公告)号：US20150115286A1

公开(公告)日：2015-04-30

申请号：US14400365

申请日：2013-06-06

申请人： Masahiro SUGIMOTO ,  Hidefumi TAKAYA ,  Akitaka SOENO ,  Jun MORIMOTO ,  DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Yuichi Takeuchi ,  Naohiro Suzuki ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Akitaka Soeno ,  Jun Morimoto ,  Narumasa Soejima ,  Yukihiko Watanabe

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L21/308 ,  H01L29/10 ,  H01L21/04 ,  H01L21/306 ,  H01L29/66 ,  H01L29/16

CPC分类号： H01L29/7811 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/761 ,  H01L21/8213 ,  H01L29/0615 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/157 ,  H01L29/158 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/872

摘要： An SiC semiconductor device has a p type region including a low concentration region and a high concentration region filled in a trench formed in a cell region. A p type column is provided by the low concentration region, and a p+ type deep layer is provided by the high concentration region. Thus, since a SJ structure can be made by the p type column and the n type column provided by the n type drift layer, an on-state resistance can be reduced. As a drain potential can be blocked by the p+ type deep layer, at turnoff, an electric field applied to the gate insulation film can be alleviated and thus breakage of the gate insulation film can be restricted. Therefore, the SiC semiconductor device can realize the reduction of the on-state resistance and the restriction of breakage of the gate insulation film.

摘要翻译： SiC半导体器件具有包含低浓度区域和填充在形成于单元区域的沟槽中的高浓度区域的p型区域。 由低浓度区域提供p型列，并且由高浓度区域提供p +型深层。 因此，由于可以通过由n型漂移层提供的p型列和n型列来形成SJ结构，所以可以降低导通电阻。 由于漏极电位可以被p +型深层阻挡，所以在关断时，施加到栅极绝缘膜的电场可以减轻，从而可以限制栅极绝缘膜的破裂。 因此，SiC半导体器件可以实现导通电阻的降低和栅极绝缘膜的破损的限制。

公开(公告)号：US08633101B2

公开(公告)日：2014-01-21

申请号：US13499652

申请日：2010-09-02

申请人： Masahiro Sugimoto ,  Akinori Seki ,  Akira Kawahashi ,  Yasuo Takahashi ,  Masakatsu Maeda

发明人： Masahiro Sugimoto ,  Akinori Seki ,  Akira Kawahashi ,  Yasuo Takahashi ,  Masakatsu Maeda

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/44 ,  H01L21/302 ,  H01L21/461 ,  H01L21/31

CPC分类号： H01L29/452 ,  H01L21/28575 ,  H01L29/2003 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/40

摘要： A manufacturing method of a semiconductor device including an electrode having low contact resistivity to a nitride semiconductor is provided. The manufacturing method includes a carbon containing layer forming step of forming a carbon containing layer containing carbon on a nitride semiconductor layer, and a titanium containing layer forming step of forming a titanium containing layer containing titanium on the carbon containing layer. A complete solid solution Ti (C, N) layer of TiN and TiC is formed between the titanium containing layer and the nitride semiconductor layer. As a result, the titanium containing layer comes to be in ohmic contact with the nitride semiconductor layer throughout the border therebetween.

摘要翻译： 提供了包括对氮化物半导体具有低接触电阻的电极的半导体器件的制造方法。 制造方法包括在氮化物半导体层上形成含有碳的含碳层的含碳层形成工序和在含碳层上形成含有钛的含钛层的含钛层形成工序。 在含钛层和氮化物半导体层之间形成TiN和TiC的完全固溶Ti（C，N）层。 结果，含钛层在其间的整个边界处与氮化物半导体层欧姆接触。

公开(公告)号：US20130330896A1

公开(公告)日：2013-12-12

申请号：US14000901

申请日：2012-09-04

申请人： Shinichiro Miyahara ,  Toshimasa Yamamoto ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

发明人： Shinichiro Miyahara ,  Toshimasa Yamamoto ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

IPC分类号： H01L29/66

CPC分类号： H01L29/66666 ,  H01L21/3065 ,  H01L29/1608 ,  H01L29/34 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/7813

摘要： A manufacturing method of a silicon carbide semiconductor device includes: forming a drift layer on a silicon carbide substrate; forming a base layer on or in a surface portion of the drift layer; forming a source region in a surface portion of the base layer; forming a trench to penetrate the base layer and to reach the drift layer; forming a gate electrode on a gate insulation film in the trench; forming a source electrode electrically connected to the source region and the base layer; and forming a drain electrode on a back surface of the substrate. The forming of the trench includes: flattening a substrate surface; and etching to form the trench after flattening.

摘要翻译： 碳化硅半导体器件的制造方法包括：在碳化硅衬底上形成漂移层; 在漂移层的表面部分上或其中形成基底层; 在所述基底层的表面部分中形成源区; 形成沟槽以穿透基层并到达漂移层; 在沟槽中的栅极绝缘膜上形成栅电极; 形成与源极区域和基极层电连接的源电极; 以及在所述基板的背面上形成漏电极。 沟槽的形成包括：使基底表面变平; 并进行蚀刻以在平坦化之后形成沟槽。

公开(公告)号：US08299498B2

公开(公告)日：2012-10-30

申请号：US12595253

申请日：2008-04-07

申请人： Tsutomu Uesugi ,  Kenji Ito ,  Osamu Ishiguro ,  Tetsu Kachi ,  Masahiro Sugimoto

发明人： Tsutomu Uesugi ,  Kenji Ito ,  Osamu Ishiguro ,  Tetsu Kachi ,  Masahiro Sugimoto

IPC分类号： H01L29/66

CPC分类号： H01L29/2003 ,  H01L29/045 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/7828

摘要： A semiconductor device 10 is provided with a first hetero junction 40b configured with two types of nitride semiconductors having different bandgap energy from each other, a second hetero junction 50b configured with two types of nitride semiconductors having different bandgap energy from each other, and a gate electrode 58 facing the second hetero junction 50b. The second hetero junction 50b is configured to be electrically connected to the first hetero junction 40b. The first hetero junction 40b is a c-plane and the second hetero junction 50b is either an a-plane or an m-plane.

摘要翻译： 半导体器件10设置有由彼此具有不同带隙能量的两种类型的氮化物半导体构成的第一异质结40b，由具有彼此具有不同带隙能量的两种类型的氮化物半导体构成的第二异质结50b，以及栅极 电极58面对第二异质结50b。 第二异质结50b被配置为电连接到第一异质结40b。 第一异质结40b是c面，第二异质结50b是a面或m面。