公开(公告)号：US07011709B2

公开(公告)日：2006-03-14

申请号：US10603771

申请日：2003-06-26

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： C30B29/16

CPC分类号： H01L21/0268 ,  B23K26/066 ,  B23K26/073 ,  C30B13/24 ,  C30B29/06 ,  H01L21/2026 ,  H01L29/66757 ,  H01L29/78675 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1012

摘要： A crystallization apparatus includes an illumination optical system to illuminate a phase shift mask and which irradiates an amorphous semiconductor film with a light beam having an intensity distribution of an inverse peak type having a smallest light intensity in a point corresponding to a phase shift portion of the phase shift mask to generate a crystallized semiconductor film. A convergence/divergence element is disposed on a light path between the illumination optical system and phase shift mask. The convergence/divergence element converts the light beam supplied from the illumination optical system into a light beam having an upward concave intensity distribution in which the light intensity is lowest in the phase shift portion and in which the light intensity increases as distant from the phase shift portion to irradiate the phase shift mask.

摘要翻译： 结晶装置包括：照明光学系统，用于照亮相移掩模，并且对与非晶半导体膜的相移部分相对应的点具有具有最小光强度的具有最小光强度的反峰值强度分布的光束照射非晶半导体膜 相移掩模以产生结晶的半导体膜。 会聚/发散元件设置在照明光学系统和相移掩模之间的光路上。 会聚/发散元件将从照明光学系统提供的光束转换为具有向上凹陷强度分布的光束，其中相位偏移部分的光强度最低，并且其中光强度远离相移 部分来照射相移掩模。

公开(公告)号：US06953714B2

公开(公告)日：2005-10-11

申请号：US10293939

申请日：2002-11-14

申请人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Yoshitaka Yamamoto ,  Hideo Koseki

发明人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Yoshitaka Yamamoto ,  Hideo Koseki

IPC分类号： H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/78675

摘要： A method for producing a thin film semiconductor device is described. In the method, a thin film layer of non-single-crystalline semiconductor, which is deposited on a base layer of glass, is processed to an island-shaped thin film layer at the time prior to the layer irradiation step. The laser irradiation to the thin film layer of non-single-crystalline semiconductor is carried out after forming an insulation film layer and a gate electrode over the island-shaped thin film layer, by using the gate electrode as the irradiation mask, whereby the center area of the island-shaped thin film layer masked by the gate electrode is crystallized, and simultaneously, the both side areas thereof which is not masked by the gate electrode are annealed. Next, a source electrode and a drain electrode is formed in the annealed areas. The implantation of impurity ion may be carried out either before or after the laser irradiation. By the above order of steps, it becomes possible to obtain a thin film semiconductor device which has small numbers of crystals and less variance of grain size of crystals for each unit of electric circuit, compared with a device produced by the conventional process. Further, the process makes it possible to be even the boundary surface between the crystallized layer and the insulation layer in a device.

摘要翻译： 对薄膜半导体器件的制造方法进行说明。 在该方法中，沉积在玻璃基底层上的非单晶半导体薄膜层在层照射步骤之前被处理成岛形薄膜层。 通过使用栅电极作为照射掩模，在岛状薄膜层上形成绝缘膜层和栅电极之后，对非单晶半导体的薄膜层进行激光照射，由此中心 由栅电极掩蔽的岛状薄膜层的区域被结晶化，同时，未被栅极电极掩蔽的两侧区域退火。 接下来，在退火区域中形成源电极和漏电极。 杂质离子的注入可以在激光照射之前或之后进行。 通过上述步骤，与通过常规方法制造的器件相比，可以获得每个电路单元具有少量晶体和较小晶体粒径变化的薄膜半导体器件。 此外，该方法使得可以在器件中甚至结晶层和绝缘层之间的边界面。

公开(公告)号：US20050161738A1

公开(公告)日：2005-07-28

申请号：US10508818

申请日：2003-03-04

申请人： Masato Hiramatsu ,  Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Yoshitaka Yamamoto

发明人： Masato Hiramatsu ,  Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Yoshitaka Yamamoto

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L27/01 ,  H01L21/00

CPC分类号： H01L29/78696 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78675

摘要： A thin film transistor includes a one conductive type semiconductor layer; a source region and a drain region which are separately provided in the semiconductor layer; and a gate electrode provided above or below the semiconductor layer with an insulating film interposed therebetween, wherein the width of the junction face between the source region and the channel which is provided between the source region and drain region, is different from the width of the junction face between the above channel region and the drain region.

摘要翻译： 薄膜晶体管包括一个导电型半导体层; 源极区和漏极区，分别设置在半导体层中; 以及设置在所述半导体层的上方或下方的绝缘膜的栅电极，其中，所述源极区域与设置在所述源极区域与漏极区域之间的所述沟道的接合面的宽度不同于 在上述沟道区域和漏极区域之间的接合面。

公开(公告)号：US20050145845A1

公开(公告)日：2005-07-07

申请号：US11041413

申请日：2005-01-25

申请人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

发明人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

IPC分类号： H01L21/324 ,  B23K26/04 ,  B23K26/06 ,  B23K26/067 ,  B23K26/073 ,  B23K26/42 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L29/04 ,  H01L29/786 ,  H01L29/76 ,  H01L21/84

CPC分类号： B23K26/04 ,  B23K26/066 ,  B23K26/067 ,  B23K26/073 ,  B23K26/705 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate.

公开(公告)号：US06870126B2

公开(公告)日：2005-03-22

申请号：US10668285

申请日：2003-09-24

申请人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

发明人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

IPC分类号： H01L21/324 ,  B23K26/04 ,  B23K26/06 ,  B23K26/067 ,  B23K26/073 ,  B23K26/42 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L29/04 ,  H01L29/786 ,  B23K26/00

CPC分类号： B23K26/04 ,  B23K26/066 ,  B23K26/067 ,  B23K26/073 ,  B23K26/705 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate.

摘要翻译： 根据本发明的半导体器件具有在相同基板上的半导体电路内具有不小于两种尺寸不同的晶粒的半导体层。

公开(公告)号：US06846728B2

公开(公告)日：2005-01-25

申请号：US10379539

申请日：2003-03-06

申请人： Masashi Goto ,  Mikihiko Nishitani ,  Masaharu Terauchi

发明人： Masashi Goto ,  Mikihiko Nishitani ,  Masaharu Terauchi

IPC分类号： G02F1/136 ,  C23C16/509 ,  C23C16/511 ,  G02F1/1368 ,  H01L21/20 ,  H01L21/205 ,  H01L21/336 ,  H01L29/786 ,  H01L31/04 ,  H01L21/36

CPC分类号： H01L29/66765 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02672 ,  H01L29/78678 ,  Y02E10/545 ,  Y02E10/546

摘要： By applying ion or optical energy or catalytic effects at the time of depositing a crystalline silicon thin film, improvements in crystallinity of the crystalline silicon thin film in proximities of an interface of a substrate or smoothing of its surface may be achieved. With this arrangement, it is possible to achieve improvements in crystallinity of the crystalline silicon film that is formed in a low temperature condition through CVD method and to prevent concaves and convexes from being formed on its surface or to prevent oxidation of grain fields, and it is accordingly possible to provide a thin film transistor, a semiconductor device such as a solar cell and methods for manufacturing these that exhibit superior characteristics and reliability.

摘要翻译： 通过在沉积晶体硅薄膜时施加离子或光能或催化作用，可以实现晶体硅薄膜在基底界面附近或其表面平滑度附近的结晶度的改善。 通过这种布置，可以通过CVD法在低温条件下形成的结晶硅膜的结晶度得到改善，并且防止在其表面上形成凹凸或防止晶粒的氧化，并且 因此可以提供薄膜晶体管，诸如太阳能电池的半导体器件及其制造方法，其具有优异的特性和可靠性。

公开(公告)号：US6162296A

公开(公告)日：2000-12-19

申请号：US252388

申请日：1999-02-18

申请人： Naoki Kohara ,  Takayuki Negami ,  Mikihiko Nishitani ,  Takahiro Wada

发明人： Naoki Kohara ,  Takayuki Negami ,  Mikihiko Nishitani ,  Takahiro Wada

IPC分类号： C23C14/06 ,  C23C14/54 ,  C30B23/02 ,  H01L31/032 ,  C23C14/26

CPC分类号： H01L31/0322 ,  C23C14/0623 ,  C23C14/541 ,  C30B23/002 ,  C30B23/02 ,  C30B29/46 ,  Y02E10/541

摘要： The method and the apparatus of manufacturing the I-III-VI.sub.2 type chalcopyrite semiconductor thin films of the present invention control the film composition easily and improve the reproducibility of films by monitoring the composition of the films during forming the films. The apparatus comprise the substrate holder and heater which are in the vacuum chamber and Mo-coated glass substrate on which Cu(In,Ga)Se.sub.2 films are deposited. The change of the substrate temperature is monitored by the use of a heating element to heat the substrate by releasing a certain quantity of heat, a mechanism of measuring a temperature of the heated substrate. The change of power supplied is monitored by the use of a power source for the heating element to keep the substrate at a certain temperature and a mechanism of monitoring the change of the power supplied to the heating element. The changes in substrate temperature or power supplied can be correlated to the film composition.

摘要翻译： 本发明的I-III-VI2型黄铜矿半导体薄膜的制造方法和装置通过在形成薄膜期间监测薄膜的成分，容易地控制薄膜组合并提高薄膜的再现性。 该装置包括位于其中沉积有Cu（In，Ga）Se2膜的真空室和Mo涂覆的玻璃基板中的基板保持器和加热器。 通过使用加热元件通过释放一定量的热来加热衬底来监测衬底温度的变化，测量加热衬底的温度的机理。 通过使用用于加热元件的电源将基板保持在一定温度并监视供应到加热元件的功率的变化的机构来监测供电的变化。 衬底温度或功率的变化可以与膜组成相关。

公开(公告)号：US5858121A

公开(公告)日：1999-01-12

申请号：US712025

申请日：1996-09-11

申请人： Takahiro Wada ,  Mikihiko Nishitani ,  Naoki Kohara

发明人： Takahiro Wada ,  Mikihiko Nishitani ,  Naoki Kohara

IPC分类号： H01L31/04 ,  H01L31/032 ,  H01L31/0336

CPC分类号： H01L31/0749 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

摘要： A thin film solar cell having high conversion efficiency is provided. The band gap of the thin film solar cell can be controlled while keeping the quality superior to conventional solar cells. The absorber layer for photovoltaic energy conversion is a Cu(In.sub.1-X Ga.sub.X)(Se.sub.1-Y S.sub.Y).sub.2 based solid solution where X and Y are in the range of the following Equation:0.317+0.176Y.gtoreq.X.gtoreq.0.117+0.176Y1>X+Y>0Y>0,The Cu(In.sub.1-X Ga.sub.X)(Se.sub.1-Y S.sub.Y).sub.2 based solid solution has a specific chalcopyrite type crystal structure and its lattice constant ratio of c-axis to a-axis is extremely close to two. It is most preferable that the band gap is 1.4 eV, X is 0.3, and Y is 0.4, since the conversion efficiency of a homojunction solar cell will then become a maximum.

摘要翻译： 提供了具有高转换效率的薄膜太阳能电池。 可以在保持质量优于常规太阳能电池的同时控制薄膜太阳能电池的带隙。 用于光能转换的吸收层是基于Cu（In1-XGaX）（Se1-YSY）2）的固溶体，其中X和Y在以下等式的范围内：0.317 + 0.176Y> / = X> / = 0.117+ 0.176Y 1> X + Y> 0 Y> 0，Cu（In1-XGaX）（Se1-YSY）2系固溶体具有特定的黄铜矿型晶体结构，其c轴与a轴的晶格常数比为 非常接近两个。 最优选的是，带隙为1.4eV，X为0.3，Y为0.4，因为同功型太阳能电池的转换效率将变得最大。

公开(公告)号：US5725671A

公开(公告)日：1998-03-10

申请号：US795289

申请日：1997-02-04

申请人： Mikihiko Nishitani ,  Takayuki Negami ,  Takahiro Wada

发明人： Mikihiko Nishitani ,  Takayuki Negami ,  Takahiro Wada

IPC分类号： H01L31/032 ,  C23C16/00

CPC分类号： H01L31/0322 ,  Y02E10/541

摘要： An apparatus for manufacturing an ABC.sub.2 chalcopyrite film (wherein A represents Cu or Ag, B represents In, Ga or Al, C represents S, Se or Te) includes a substrate holder, a substrate heater, a supply source for supplying elements A, B or C onto the substrate and for controlling the supply process, and a monitor for monitoring an electrical or optical property of the thin film layer deposited on the substrate. The electrical or optical property of the thin film layer abruptly changes at a first time point when the A/B ratio in the thin film layer changes from an element A-excessive state to the stoichiometric composition ratio of the ABC.sub.2. The electrical or optical property of the thin film layer demonstrates a stable value at a second time point when the A/B ratio becomes an element-B excessive state. Deposition is terminated at the second time point.

摘要翻译： 一种用于制造ABC2黄铜矿膜的设备（其中A表示Cu或Ag，B表示In，Ga或Al，C表示S，Se或Te）包括基板保持器，基板加热器，用于供应元件A，B的供应源 或C并且用于控制供应过程，以及用于监测沉积在基板上的薄膜层的电学或光学特性的监视器。 当薄膜层中的A / B比从元素A过量状态变化到ABC2的化学计量组成比时，薄膜层的电学或光学特性在第一时间点突然变化。 当A / B比变为元件B过量状态时，薄膜层的电学或光学特性在第二时间点表现出稳定的值。 沉积在第二个时间点终止。

公开(公告)号：US5506426A

公开(公告)日：1996-04-09

申请号：US61491

申请日：1993-05-12

申请人： Shigemi Kohiki ,  Takayuki Negami ,  Mikihiko Nishitani ,  Takahiro Wada

发明人： Shigemi Kohiki ,  Takayuki Negami ,  Mikihiko Nishitani ,  Takahiro Wada

IPC分类号： C01B19/04 ,  C01G1/00 ,  H01L21/203 ,  H01L31/032 ,  H01L31/04 ,  H01L31/068 ,  H01L31/10 ,  H01L29/18 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/103

CPC分类号： H01L31/032 ,  H01L31/0322 ,  H01L31/0323 ,  H01L31/068 ,  Y02E10/541 ,  Y02E10/547 ,  Y10S438/93

摘要： Chalcopyrite compound semiconductor thin films represented by I-III-VI.sub.2-x V.sub.x or I-III-VI.sub.2-x VII.sub.x, and semiconductor devices having a I-III-VI.sub.2 /I-III-VI.sub.2-x V.sub.x or I-III-VI.sub.2 /I-III-VI.sub.2-x VII.sub.x chalcopyrite homojunction are provided. Such chalcopyrite compound semiconductor thin films are produced by radiating molecular beams or ion beams of the I, III, VI, and V or VII group elements simultaneously, or by doping I-III-VI.sub.2 chalcopyrite thin films with VII-group atoms after the formation thereof. Pollution-free solar cells are also provided, which are formed by the steps of forming a structure of a lower electrode, a chalcopyrite semiconductor thin film, and an upper electrode and radiating accelerated ion beams of a V, VII, or VIII group element thereto.

摘要翻译： 由I-III-VI2-xVx或I-III-VI2-xVIIx表示的黄铜矿化合物半导体薄膜和具有I-III-VI2 / I-III-VI2-xVx或I-III-VI2 / 提供了III-VI2-xVIIx型黄铜矿同质结。 这种黄铜矿化合物半导体薄膜通过同时辐射I，III，VI和V或VII族元素的分子束或离子束，或者通过在形成之后掺杂具有VII-基团原子的I-III-VI2黄铜矿薄膜 其中。 还提供了无污染的太阳能电池，其通过形成下电极，黄铜矿半导体薄膜和上电极的结构的步骤形成，并且将V，VII或VIII族元素的加速离子束辐射到其上 。