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    GROWING AN IMPROVED P-GAN LAYER OF AN LED THROUGH PRESSURE RAMPING
    81.
    发明申请
    GROWING AN IMPROVED P-GAN LAYER OF AN LED THROUGH PRESSURE RAMPING 有权
    通过压力波动增加LED改进的P-GAN层

    公开(公告)号：US20130240831A1

    公开(公告)日：2013-09-19

    申请号：US13418663

    申请日：2012-03-13

    Applicant: Ming-Hua Lo ,  Zhen-Yu Li ,  Hsing-Kuo Hsia ,  Hao-Chung Kuo

    Inventor： Ming-Hua Lo ,  Zhen-Yu Li ,  Hsing-Kuo Hsia ,  Hao-Chung Kuo

    IPC: H01L33/06 ,  H01L33/32

    CPC classification number: H01L33/025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/36

    Abstract: The present disclosure involves an apparatus. The apparatus includes a photonic die structure that includes a light-emitting diode (LED) die. The LED die is a vertical LED die in some embodiments. The LED die includes a substrate. A p-doped III-V compound layer and an n-doped III-V compound layer are each disposed over the substrate. A multiple quantum well (MQW) layer is disposed between the p-doped III-V compound layer and the n-doped III-V compound layer. The p-doped III-V compound layer includes a first region having a non-exponential doping concentration characteristic and a second region having an exponential doping concentration characteristic. In some embodiments, the second region is formed using a lower pressure than the first region.

    Abstract translation: 本公开涉及一种装置。 该装置包括包括发光二极管（LED）裸片的光子管芯结构。 在一些实施例中，LED管芯是垂直LED管芯。 LED管芯包括衬底。 p型掺杂的III-V化合物层和n掺杂的III-V化合物层分别设置在衬底上。 在P掺杂的III-V化合物层和n掺杂的III-V化合物层之间设置多量子阱（MQW）层。 p掺杂的III-V化合物层包括具有非指数掺杂浓度特性的第一区域和具有指数掺杂浓度特性的第二区域。 在一些实施例中，使用比第一区域更低的压力形成第二区域。

    LED WITH EMBEDDED DOPED CURRENT BLOCKING LAYER
    82.
    发明申请
    LED WITH EMBEDDED DOPED CURRENT BLOCKING LAYER 审中-公开
    LED嵌入式DOPED电流阻塞层

    公开(公告)号：US20130221320A1

    公开(公告)日：2013-08-29

    申请号：US13405906

    申请日：2012-02-27

    Applicant: Zhen-Yu Li ,  Hsing-Kuo Hsia ,  Hao-Chung Kuo

    Inventor： Zhen-Yu Li ,  Hsing-Kuo Hsia ,  Hao-Chung Kuo

    IPC: H01L33/04

    CPC classification number: H01L33/145 ,  H01L21/2654

    Abstract: The present disclosure involves an apparatus. The apparatus includes a photonic die structure that includes a plurality of layers. A current blocking layer is embedded in one of the plurality of layers. The current blocking layer is a doped layer. The present disclosure also involves a method of fabricating a light-emitting diode (LED). As a part of the method, an LED is provided. The LED includes a plurality of layers. A patterned mask is then formed over the LED. The patterned mask contains an opening. A dopant is introduced through the opening to a layer of the LED through either an ion implantation process or a thermal diffusion process. As a result of the dopant being introduced, a doped current blocking component is formed to be embedded within the layer of the LED.

    Abstract translation: 本公开涉及一种装置。 该装置包括包含多个层的光子管芯结构。 电流阻挡层嵌入在多个层之一中。 电流阻挡层是掺杂层。 本公开还涉及一种制造发光二极管（LED）的方法。 作为该方法的一部分，提供LED。 LED包括多个层。 然后在LED上形成图案化掩模。 图案面具包含开口。 通过离子注入工艺或热扩散工艺将掺杂剂通过开口引入LED层。 作为引入掺杂剂的结果，形成掺杂电流阻挡组分以嵌入LED的层内。

    Light emitting device
    83.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US08476659B2

    公开(公告)日：2013-07-02

    申请号：US12837227

    申请日：2010-07-15

    Applicant: Hsing-Kuo Hsia ,  Hung-Weng Huang ,  Ching-Hua Chiu ,  Gordon Kuo

    Inventor： Hsing-Kuo Hsia ,  Hung-Weng Huang ,  Ching-Hua Chiu ,  Gordon Kuo

    IPC: H01L33/00 ,  H01L21/00

    CPC classification number: H01L33/0095 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/405 ,  H01L33/44

    Abstract: The present disclosure relates to methods for performing wafer-level measurement and wafer-level binning of LED devices. The present disclosure also relates to methods for reducing thermal resistance of LED devices. The methods include growing epitaxial layers consisting of an n-doped layer, an active layer, and a p-doped layer on a wafer of a growth substrate. The method further includes forming p-contact and n-contact to the p-doped layer and the n-doped layer, respectively. The method further includes performing a wafer-level measurement of the LED by supplying power to the LED through the n-contact and the p-contact. The method further includes dicing the wafer to generate diced LED dies, bonding the diced LED dies to a chip substrate, and removing the growth substrate from the diced LED dies.

    Abstract translation: 本公开涉及用于执行LED器件的晶片级测量和晶片级合并的方法。 本公开还涉及降低LED器件热阻的方法。 所述方法包括在生长衬底的晶片上生长由n掺杂层，有源层和p掺杂层组成的外延层。 该方法还包括分别与p掺杂层和n掺杂层形成p-接触和n-接触。 该方法还包括通过n接触和p接触向LED提供电力来执行LED的晶片级测量。 该方法还包括切割晶片以产生切割的LED管芯，将切割的LED管芯结合到芯片衬底，以及从切割的LED管芯移除生长衬底。

    Thermal management system for multiple heat source devices
    84.
    发明授权
    Thermal management system for multiple heat source devices 有权
    多个热源设备的热管理系统

    公开(公告)号：US08466486B2

    公开(公告)日：2013-06-18

    申请号：US12870164

    申请日：2010-08-27

    Applicant: Tsorng-Dih Yuan

    Inventor： Tsorng-Dih Yuan

    IPC: H01L33/00

    CPC classification number: H01L25/167 ,  H01L33/54 ,  H01L33/641 ,  H01L33/642 ,  H01L33/648 ,  H01L2924/0002 ,  H01L2933/0075 ,  H01L2924/00

    Abstract: The present disclosure provides systems and methods for forming a semiconductor device. The semiconductor device includes a substrate having a first side and a second side opposite the first side. A first heat producing element is formed on the first side of the substrate. A second heat producing element is formed on the first side of substrate co-planar with, but not touching the first heat producing element. A heat spreader is coupled to the second side of the substrate using a thermal interface material. The heat spreader includes a first and second vapor chambers. The first vapor chamber is embedded in the heat spreader substantially opposite the first heat producing element. The second vapor chamber is embedded in the heat spreader substantially opposite the second heat producing element. As an example, the first heat producing element may be a light-emitting diode (LED) and the second heat producing element may be a driver circuit for the LED.

    Abstract translation: 本公开提供了用于形成半导体器件的系统和方法。 半导体器件包括具有第一侧和与第一侧相对的第二侧的衬底。 第一发热元件形成在基板的第一侧上。 第二发热元件形成在与第一发热元件共同但不接触第一发热元件的基板的第一侧上。 散热器使用热界面材料耦合到衬底的第二侧。 散热器包括第一和第二蒸气室。 第一蒸气室与第一发热元件基本上相对地嵌入散热器中。 第二蒸气室与第二发热元件大致相对地嵌入散热器中。 作为示例，第一发热元件可以是发光二极管（LED），第二发热元件可以是LED的驱动电路。

    Omnidirectional reflector
    85.
    发明授权
    Omnidirectional reflector 有权

    公开(公告)号：US08415691B2

    公开(公告)日：2013-04-09

    申请号：US12202167

    申请日：2008-08-29

    Applicant: Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

    Inventor： Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

    IPC: H01L33/00

    CPC classification number: H01L33/60 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/46 ,  H01L2933/0083

    Abstract: A system and method for manufacturing an LED is provided. A preferred embodiment includes a substrate with a distributed Bragg reflector formed over the substrate. A photonic crystal layer is formed over the distributed Bragg reflector to collimate the light that impinges upon the distributed Bragg reflector, thereby increasing the efficiency of the distributed Bragg reflector. A first contact layer, an active layer, and a second contact layer are preferably either formed over the photonic crystal layer or alternatively attached to the photonic crystal layer.

    Light-emitting diode with current-spreading region
    86.
    发明授权
    Light-emitting diode with current-spreading region 有权
    具有电流扩展区域的发光二极管

    公开(公告)号：US08399273B2

    公开(公告)日：2013-03-19

    申请号：US12539757

    申请日：2009-08-12

    Applicant: Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

    Inventor： Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

    IPC: H01L21/00

    CPC classification number: H01L33/145 ,  H01L33/0066 ,  H01L33/04 ,  H01L33/06 ,  H01L33/30 ,  H01L33/36 ,  H01L33/62 ,  H01L2933/0066

    Abstract: A light-emitting diode (LED) device is provided. The LED device has a lower LED layer and an upper LED layer with a light-emitting layer interposed therebetween. A current blocking layer is formed in the upper LED layer such that current passing between an electrode contacting the upper LED layer flows around the current blocking layer. When the current blocking layer is positioned between the electrode and the light-emitting layer, the light emitted by the light-emitting layer is not blocked by the electrode and the light efficiency is increased. The current blocking layer may be formed by converting a portion of the upper LED layer into a resistive region. In an embodiment, ions such as magnesium, carbon, or silicon are implanted into the upper LED layer to form the current blocking layer.

    Abstract translation: 提供了一种发光二极管（LED）装置。 LED装置具有较低的LED层和位于其间的发光层的上部LED层。 在上LED层中形成电流阻挡层，使得在与上层LED层接触的电极之间的电流流过电流阻挡层。 当电流阻挡层位于电极和发光层之间时，由发光层发射的光不被电极阻挡，并且光效率增加。 可以通过将上部LED层的一部分转换成电阻区域来形成电流阻挡层。 在一个实施方案中，诸如镁，碳或硅的离子注入上层LED层以形成电流阻挡层。

    Light Emitting Diode Light Bar Module with Electrical Connectors Formed by Injection Molding
    87.
    发明申请
    Light Emitting Diode Light Bar Module with Electrical Connectors Formed by Injection Molding 有权
    具有通过注塑成型的电连接器的发光二极管灯条模块

    公开(公告)号：US20120287635A1

    公开(公告)日：2012-11-15

    申请号：US13557315

    申请日：2012-07-25

    Applicant: Hsiao-Wen Lee ,  Chih-Hsuan Sun ,  Wei-Yu Yeh

    Inventor： Hsiao-Wen Lee ,  Chih-Hsuan Sun ,  Wei-Yu Yeh

    IPC: F21V29/00 ,  F21V31/00 ,  F21V5/04

    CPC classification number: B29C45/0001 ,  B29C45/14262 ,  B29C45/14311 ,  B29C45/14639 ,  B29K2705/02 ,  F21S4/20 ,  F21V23/06 ,  F21Y2103/10 ,  F21Y2115/10 ,  H01R43/24 ,  Y10T29/53

    Abstract: The present disclosure relates to methods for fabricating electrical connectors of a waterproof connector-heat sink assembly of a LED light bar module using injection molding. The methods include matching the coefficient of thermal expansion (CTE) of injection molding materials for the connectors and heat sinks. A heat sink and conductor pins are inserted into an injection mold and the injection molding materials are injected into the injection mold. An integrated connector-heat sink assembly is formed when the injection molding materials of the connectors form a waterproof seal with the heat sink when the injection molding materials solidify. Placement of the heat sink and conductor pins inside the injection mold is controlled to ensure that adhesive bonding between the injection molding materials and the heat sink is stronger than a maximum shear force.

    Abstract translation: 本公开涉及使用注射成型制造LED灯条模块的防水连接器 - 散热器组件的电连接器的方法。 这些方法包括匹配用于连接器和散热器的注塑材料的热膨胀系数（CTE）。 将散热器和导体销插入注射模具中，并将注射成型材料注入注射模具中。 当注射成型材料固化时，当连接器的注射成型材料与散热器形成防水密封时，形成集成连接器 - 散热器组件。 控制注射模具内的散热器和导体销的放置，以确保注射成型材料和散热片之间的粘合剂粘合力比最大剪切力更强。

    Method of separating light-emitting diode from a growth substrate
    88.
    发明授权
    Method of separating light-emitting diode from a growth substrate 有权
    从生长衬底分离发光二极管的方法

    公开(公告)号：US08236583B2

    公开(公告)日：2012-08-07

    申请号：US12554578

    申请日：2009-09-04

    Applicant: Ding-Yuan Chen ,  Hung-Ta Lin ,  Chen-Hua Yu ,  Wen-Chih Chiou

    Inventor： Ding-Yuan Chen ,  Hung-Ta Lin ,  Chen-Hua Yu ,  Wen-Chih Chiou

    IPC: H01L21/00

    CPC classification number: H01L33/007 ,  C23C14/048 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L25/167 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.

    Abstract translation: 提供一种形成发光二极管（LED）器件并将LED器件与生长衬底分离的方法。 LED器件通过在生长衬底上形成LED结构而形成。 该方法包括在生长衬底上形成和图案化掩模层。 在图案化掩模层上形成第一接触层，在第一接触层和图案化掩模层之间具有空气桥。 第一接触层可以是LED结构的接触层。 在形成LED结构之后，生长衬底沿着空气桥与LED结构分离。

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