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    METHOD OF MANUFACTURING A MEMS MICROPHONE
    83.
    发明申请
    METHOD OF MANUFACTURING A MEMS MICROPHONE 审中-公开
    制造MEMS麦克风的方法

    公开(公告)号：US20160088414A1

    公开(公告)日：2016-03-24

    申请号：US14849582

    申请日：2015-09-09

    Applicant: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION

    Inventor： CHAO ZHENG ,  WEIGANG LI

    IPC: H04R31/00 ,  H04R19/00 ,  H04R19/04 ,  B81C1/00

    CPC classification number: H04R31/00 ,  B81B2201/0257 ,  B81C1/00801 ,  B81C2201/014 ,  B81C2201/0143 ,  H04R19/005 ,  H04R19/04 ,  H04R2201/003

    Abstract: A method of fabricating a micro electrical-mechanical system (MEMS) microphone on a substrate includes forming a sacrificial layer on a front surface of the substrate, forming a membrane within the sacrificial layer, forming a fixed plate on the sacrificial layer at a location corresponding to a location of the membrane, performing a laser cutting on the back surface of the substrate at a location corresponding to an edge region of the fixed plate until a surface of the sacrificial layer is expose to form an opening, forming a patterned photoresist layer on the back surface exposing a region within the boundary of the opening, removing a portion of the back surface using the patterned photoresist layer as a mask to form a cavity, and removing a portion of the sacrificial layer above and below the membrane to form an air gap between the membrane and the fixed plate.

    Abstract translation: 在衬底上制造微电子机械系统（MEMS）麦克风的方法包括在衬底的前表面上形成牺牲层，在牺牲层内形成膜，在牺牲层上形成固定板，位于对应的位置 到所述膜的位置，在对应于所述固定板的边缘区域的位置处在所述基板的所述背面上进行激光切割，直到所述牺牲层的表面暴露以形成开口，以形成图案化的光致抗蚀剂层 后表面露出开口边界内的区域，使用图案化的光致抗蚀剂层作为掩模去除背面的一部分以形成空腔，以及去除膜上方和下方的牺牲层的一部分以形成空气 膜与固定板之间的间隙。

    Method for etching a complex pattern
    85.
    发明授权
    Method for etching a complex pattern 有权
    蚀刻复杂图案的方法

    公开(公告)号：US09187320B2

    公开(公告)日：2015-11-17

    申请号：US14370529

    申请日：2013-01-03

    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

    Inventor： Bernard Diem

    IPC: H01L21/302 ,  B81C1/00 ,  H01L21/308

    CPC classification number: B81C1/00619 ,  B81B2203/033 ,  B81B2203/0392 ,  B81C1/00103 ,  B81C1/00531 ,  B81C1/00539 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/014 ,  H01L21/3083

    Abstract: A method for etching a desired complex pattern in a first face of a substrate, including: simultaneous etching of at least a first and a second sub-pattern through the first face of the substrate, the etched sub-patterns being separated by at least one separating wall, a width of the first sub-pattern being greater than a width of the second sub-pattern at the first face, and a depth of the first sub-pattern being greater than a depth of the second sub-pattern in a direction perpendicular to the said first face; and removing or eliminating the separating wall to expose the desired complex pattern.

    Abstract translation: 一种在衬底的第一面中蚀刻期望的复合图案的方法，包括：通过衬底的第一面同时蚀刻至少第一和第二子图案，蚀刻的子图案被至少一个 分隔壁，所述第一子图案的宽度大于所述第一面处的所述第二子图案的宽度，并且所述第一子图案的深度大于所述第二子图案的方向上的深度 垂直于所述第一面; 以及去除或除去分离壁以暴露所需的复杂图案。

    LOW TEMPERATURE CERAMIC MICROELECTROMECHANICAL STRUCTURES
    86.
    发明申请
    LOW TEMPERATURE CERAMIC MICROELECTROMECHANICAL STRUCTURES 有权
    低温陶瓷微电子结构

    公开(公告)号：US20150008788A1

    公开(公告)日：2015-01-08

    申请号：US14185160

    申请日：2014-02-20

    Applicant: The Royal Institution for the Advancement of Learning / McGill University

    Inventor： Mourad El-Gamal ,  Frederic Nabki ,  Paul-Vahe Cicek

    IPC: B81C1/00 ,  B81B7/00 ,  B81B3/00

    CPC classification number: B81C1/00666 ,  B81B3/0021 ,  B81B7/008 ,  B81B2201/01 ,  B81B2201/0235 ,  B81B2201/0271 ,  B81B2201/03 ,  B81B2207/015 ,  B81B2207/03 ,  B81C1/00063 ,  B81C1/00246 ,  B81C1/00396 ,  B81C1/00587 ,  B81C2201/014 ,  B81C2201/0169 ,  B81C2201/0174 ,  B81C2203/0721 ,  B81C2203/0735

    Abstract: A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience whilst also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer. The use of silicon carbide being beneficial within the formation of MEMS elements such as motors, gears, rotors, translation drives, etc where increased hardness reduces wear of such elements during operation.

    Abstract translation: 提供了一种提供与硅CMOS电子器件兼容的微机电结构（MEMS）的方法。 该方法提供了将MEMS制造的集成电路的最大曝光限制在低于350℃并可能低于250℃的工艺和制造顺序，从而允许将MEMS器件直接制造到电子器件上，例如 作为Si CMOS电路。 该方法进一步提供具有多个非导电结构层的MEMS器件，例如用小的侧向间隙分离的碳化硅。 这种碳化硅结构提供增强的材料性能，增加环境和化学弹性，同时还允许利用结构层的非导电材料来实现新颖的设计。 在形成MEMS元件（例如马达，齿轮，转子，平移驱动器等）中使用碳化硅是有益的，其中增加的硬度降低了操作期间这些元件的磨损。

    Method for MEMS device fabrication and device formed
    87.
    发明授权
    Method for MEMS device fabrication and device formed 有权
    MEMS器件制造方法及器件形成

    公开(公告)号：US08921953B2

    公开(公告)日：2014-12-30

    申请号：US13946479

    申请日：2013-07-19

    Applicant: Cavendish Kinetics Inc.

    Inventor： Mickael Renault ,  Joseph Damian Gordon Lacey ,  Vikram Joshi ,  Thomas L. Maguire

    IPC: H01L29/84 ,  B81C1/00 ,  B81B3/00

    CPC classification number: B81B3/0072 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2207/096 ,  B81C1/00039 ,  B81C1/00333 ,  B81C1/00476 ,  B81C2201/0132 ,  B81C2201/014 ,  B81C2203/0145 ,  B81C2203/0714

    Abstract: The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion.

    Abstract translation: 本发明一般涉及用于生产MEMS或NEMS装置和装置本身的方法。 与悬臂结构相比，具有较低复合系数的材料的薄层可以沉积在悬臂结构，RF电极和拉出电极上。 薄层允许引入空腔的蚀刻气体降低空腔内的整体蚀刻剂复合速率，从而提高空腔内的牺牲材料的蚀刻速率。 蚀刻剂本身可以通过与悬臂结构的锚固部分线性对准的封装层中的开口引入，使得首先蚀刻最顶层的牺牲材料。 此后，密封材料可以密封空腔并且一直延伸到空腔中，以锚定部分，以向锚固部分提供额外的强度。

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