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公开(公告)号：US20240317579A1
公开(公告)日：2024-09-26
申请号：US18676090
申请日：2024-05-28
Applicant: ROHM CO., LTD.
Inventor： Daisuke KAMINISHI , Martin Wilfried HELLER , Toma FUJITA
IPC: B81C1/00 , B81B7/00 , G01P15/125
CPC classification number: B81C1/00269 , B81B7/0006 , G01P15/125 , B81B2201/0235 , B81B2203/0353 , B81B2203/04 , B81C2201/013 , B81C2201/0159 , B81C2201/0176 , B81C2203/037
Abstract: A MEMS sensor includes a bond portion in which a metal structure in a device substrate and a metal laminate are eutectically bonded. The bond portion bonds the device substrate and a lid substrate. The metal laminate is located on a main surface of the lid substrate and facing an exposed portion in the metal structure. The metal laminate includes a first metal and a second metal different from the first metal.
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公开(公告)号：US12070773B2
公开(公告)日：2024-08-27
申请号：US18099456
申请日：2023-01-20
Applicant: BFLY OPERATIONS, INC.
Inventor： Lingyun Miao , Jianwei Liu , Keith G. Fife
CPC classification number: B06B1/0292 , B81B3/0021 , B81C1/00158 , B81B2201/0271 , B81B2203/0127 , B81B2203/0315 , B81B2203/04 , B81C2201/0125 , B81C2201/013 , B81C2201/0176 , B81C2203/03
Abstract: An ultrasonic transducer device includes a patterned film stack disposed on first regions of a substrate, the patterned film stack including a metal electrode layer and a bottom cavity layer formed on the metal electrode layer. The ultrasonic transducer device further includes a planarized insulation layer disposed on second regions of the substrate layer, a cavity formed in a membrane support layer and a CMP stop layer, the CMP stop layer including a top layer of the patterned film stack and the membrane support layer formed over the patterned film stack and the planarized insulation layer. The ultrasonic transducer device also includes a membrane bonded to the membrane support layer. The CMP stop layer underlies portions of the membrane support layer but not the cavity.
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公开(公告)号：US20230406692A1
公开(公告)日：2023-12-21
申请号：US17878924
申请日：2022-08-02
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Jung-Hao Chang , Weng-Yi Chen
CPC classification number: B81B3/0021 , B81C1/00158 , B81B2201/0257 , B81B2203/0127 , B81B2203/0315 , B81C2201/0132 , B81C2201/0156 , B81C2201/0176
Abstract: A microelectromechanical system (MEMS) microphone includes a substrate, a membrane supported relative to the substrate, an opening extending through the entire thickness of the membrane, and a spacer disposed on the sidewall of the opening. The spacer protrudes beyond the top surface of the membrane.
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公开(公告)号：US20230294980A1
公开(公告)日：2023-09-21
申请号：US17697957
申请日：2022-03-18
CPC classification number: B81C1/00571 , B81B3/0021 , B81C2201/014 , B81C2201/0197 , B81C2201/0181 , B81C2201/0176 , B81C2201/0104 , B81B2201/0235 , B81B2201/0242 , B81B2203/0315
Abstract: A micro-electro-mechanical system (MEMS) device includes a supporting substrate, a cavity disposed in the supporting substrate, a stopper, and a MEMS structure. The stopper is disposed between the supporting substrate and the cavity, and an inner sidewall of the stopper is in contact with the cavity. The stopper includes a filling material surrounding a periphery of the cavity, and a liner wrapping around the filling material. The MEMS structure is disposed over the cavity and attached on the stopper and the supporting substrate.
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公开(公告)号：US20230149977A1
公开(公告)日：2023-05-18
申请号：US18099456
申请日：2023-01-20
Applicant: BFLY OPERATIONS, INC.
Inventor： Lingyun Miao , Jianwei Liu , Keith G. Fife
CPC classification number: B06B1/0292 , B81B3/0021 , B81C1/00158 , B81B2201/0271 , B81B2203/0127 , B81C2203/03 , B81B2203/04 , B81C2201/0125 , B81C2201/013 , B81C2201/0176 , B81B2203/0315
Abstract: An ultrasonic transducer device includes a patterned film stack disposed on first regions of a substrate, the patterned film stack including a metal electrode layer and a bottom cavity layer formed on the metal electrode layer. The ultrasonic transducer device further includes a planarized insulation layer disposed on second regions of the substrate layer, a cavity formed in a membrane support layer and a CMP stop layer, the CMP stop layer including a top layer of the patterned film stack and the membrane support layer formed over the patterned film stack and the planarized insulation layer. The ultrasonic transducer device also includes a membrane bonded to the membrane support layer. The CMP stop layer underlies portions of the membrane support layer but not the cavity.
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Patent Agency Ranking
公开(公告)号：US20180354783A1
公开(公告)日：2018-12-13
申请号：US16107795
申请日：2018-08-21
Applicant: United Microelectronics Corp.
Inventor： Chang-Sheng Hsu , Chih-Fan Hu , Chia-Wei Lee , En Chan Chen , Shih-Wei Li
IPC: B81C1/00
CPC classification number: B81C1/00246 , B81B2207/015 , B81B2207/07 , B81C2201/0176 , B81C2203/036 , B81C2203/0735
Abstract: A microelectromechanical system structure and a method for fabricating the same are provided. A method for fabricating a MEMS structure includes the following steps. A first substrate is provided, wherein a transistor, a first dielectric layer and an interconnection structure are formed thereon. A second substrate is provided, wherein a second dielectric layer and a thermal stability layer are formed on the second substrate. The first substrate is bonded to the second substrate, and the second substrate removed. A conductive layer is formed within the second dielectric layer and electrically connected to the interconnection structure. The thermal stability layer is located between the conductive layer and the interconnection structure. A growth temperature of a material of the thermal stability layer is higher than a growth temperature of a material of the conductive layer and a growth temperature of a material of the interconnection structure.
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公开(公告)号：US20180237292A1
公开(公告)日：2018-08-23
申请号：US15901196
申请日：2018-02-21
Applicant: Infineon Technologies AG
Inventor： Markus Kahn , Anna-Katharina Kaiser , Soenke Pirk , Juergen Steinbrenner , Julia-Magdalena Straeussnigg
CPC classification number: B81C1/00801 , B81C2201/0133 , B81C2201/0176 , B81C2201/053 , B81C2201/056 , H04R19/005 , H04R19/04 , H04R31/00 , H04R2201/003
Abstract: A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.
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公开(公告)号：US20180179052A1
公开(公告)日：2018-06-28
申请号：US15894119
申请日：2018-02-12
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Michael T. Brigham , Christopher V. Jahnes , Cameron E. Luce , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper , Eric J. White
CPC classification number: B81C1/0015 , B81B3/0021 , B81B2203/0118 , B81B2203/0315 , B81B2207/09 , B81C1/00047 , B81C1/00269 , B81C1/00365 , B81C1/00531 , B81C1/00936 , B81C2201/0104 , B81C2201/0107 , B81C2201/0121 , B81C2201/0125 , B81C2201/0132 , B81C2201/0176 , B81C2201/0181 , B81C2203/0109 , B81C2203/0145 , B81C2203/0714 , G06F17/5009
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
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公开(公告)号：US20170349430A1
公开(公告)日：2017-12-07
申请号：US15430813
申请日：2017-02-13
Applicant: Mitsubishi Electric Corporation
Inventor： Kimitoshi SATO
CPC classification number: B81B3/0072 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81B2203/04 , B81C1/00666 , B81C2201/0167 , B81C2201/0176 , G01L9/0045 , G01L9/0047 , G01L9/0048 , G01L9/005 , G01L9/0073 , G01L19/04
Abstract: A semiconductor pressure sensor includes a fixed electrode placed at a principal surface of a semiconductor substrate, and a diaphragm movable through an air gap in a thickness direction of the semiconductor substrate at least in an area where the diaphragm is opposed to the fixed electrode. The diaphragm includes: a movable electrode; a first insulation film placed closer to the air gap with respect to the movable electrode; a second insulation film placed opposite to the air gap with respect to the movable electrode, the second insulation film being of a same film type as the first insulation film; and a shield film that sandwiches the second insulation film with the movable electrode.
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公开(公告)号：US09731962B2
公开(公告)日：2017-08-15
申请号：US15158056
申请日：2016-05-18
Inventor： Xuanjie Liu , Hongmei Xie , Liangliang Guo
CPC classification number: B81C1/00246 , B81B7/007 , B81B2207/015 , B81B2207/094 , B81C2201/0132 , B81C2201/0176 , B81C2203/0109 , B81C2203/036 , B81C2203/0735 , B81C2203/0771 , H01L41/0973
Abstract: MEMS devices and methods for forming the same are provided. A first metal interconnect structure is formed on a first semiconductor substrate to connect to a CMOS control circuit in the first semiconductor substrate. A bonding layer having a cavity is formed on the first metal interconnect structure, and then bonded with a second semiconductor substrate. A conductive plug passes through a first region of the second semiconductor substrate, through the bonding layer, and on the first metal interconnect structure. A second metal interconnect structure includes a first end formed on the first region of the second semiconductor substrate, and a second end connected to the conductive plug. Through-holes are disposed through a second region of the second semiconductor substrate and through a top portion of the bonded layer that is on the cavity to leave a movable electrode to form the MEMS device.
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