OPTICAL SEMICONDUCTOR ELEMENT UTILIZING OPTICAL TRANSITION BETWEEN ZNO HETEROSTRUCTURE SUB-BANDS
    87.
    发明申请
    OPTICAL SEMICONDUCTOR ELEMENT UTILIZING OPTICAL TRANSITION BETWEEN ZNO HETEROSTRUCTURE SUB-BANDS 失效
    光学半导体元件利用ZNO结构子带之间的光学转换

    公开(公告)号:US20040173883A1

    公开(公告)日:2004-09-09

    申请号:US10451378

    申请日:2004-05-12

    IPC分类号: H01L023/495

    摘要: Disclosed is an optical semiconductor device which has a quantum well structure comprising a quantum well made of a zinc oxide or a zinc oxide mixed crystal thin film, and utilizes optical transitions between subbands in the quantum well structure. An element of this device can be formed as a film on a transparent substrate or a plastic substrate at a temperature of 200null C. or lower. The quantum well structure includes a barrier layer made of an insulating material such as ZnMgO; a homologous compound expressed by the following general formula: RMO3(AO)m, wherein RnullSc or In, MnullIn, Fe, Cr, Ga or Al, AnullZn, Mg, Cu, Mn, Fe, Co, Ni or Cd, and mnulla natural number; or (Li, Na)(Ga, Al)O2. The optical semiconductor device is capable of using a transparent or plastic substrate as its substrate, and achieving a high-efficient wide-band light-emitting or receiving device and an ultrafast optical moderation or switching applicable to an optical communication system requiring one terabit/sec or more of data transmission speed.

    摘要翻译: 公开了一种具有量子阱结构的光学半导体器件,该量子阱结构包括由氧化锌或氧化锌混合晶体薄膜制成的量子阱,并利用量子阱结构中的子带之间的光学跃迁。 该装置的元件可以在200℃以下的温度下在透明基板或塑料基板上形成为膜。 量子阱结构包括由绝缘材料如ZnMgO制成的阻挡层; 由以下通式表示的同源化合物:RMO3(AO)m,其中R = Sc或In,M = In,Fe,Cr,Ga或Al,A = Zn,Mg,Cu,Mn,Fe,Co,Ni 或Cd,m =自然数; 或(Li,Na)(Ga,Al)O 2。 光学半导体器件能够使用透明或塑料基板作为其基板,并且实现高效宽带发光或接收装置和适用于需要一兆比特/秒的光通信系统的超快光学调节或切换 或更多的数据传输速度。

    Electroabsorption modulator
    88.
    发明申请
    Electroabsorption modulator 有权
    电吸收调制器

    公开(公告)号:US20040149981A1

    公开(公告)日:2004-08-05

    申请号:US10740080

    申请日:2003-12-18

    IPC分类号: H01L029/06

    摘要: A semiconductor modulator is disclosed which exhibits a negative alpha parameter at low operating bias. The device includes at least two barrier layers with a quantum well layer therebetween. An additional layer is formed adjacent to the quantum well layer, the additional layer having a bulk bandgap energy greater than the quantum well layer so as to form a stepped well between the barrier layers.

    摘要翻译: 公开了一种半导体调制器,其在低工作偏压下表现出负的α参数。 该装置包括至少两个其间具有量子阱层的势垒层。 邻近量子阱层形成附加层,附加层具有大于量子阱层的体带隙能量,以便在势垒层之间形成台阶阱。