摘要:
An optical transmitter comprises a monolithic transmitter photonic integrated circuit (TxPIC) chip that includes an array of modulated sources formed on the PIC chip and having different operating wavelengths approximating a standardized wavelength grid and providing signal outputs of different wavelengths. A wavelength selective combiner is formed on the PIC chip having a wavelength grid passband response approximating the wavelength grid of the standardized wavelength grid. The signal outputs of the modulated sources optically coupled to inputs of the wavelength selective combiner to produce a combined signal output from the combiner. A first wavelength tuning element coupled to each of the modulated sources and a second wavelength tuning element coupled to the wavelength selective combiner. A wavelength monitoring unit is coupled to the wavelength selective combiner to sample the combined signal output. A wavelength control system coupled to the first and second wavelength tuning elements and to said wavelength monitoring unit to receive the sampled combined signal output. The wavelength control system adjusts the respective wavelengths of operation of the modulated sources to approximate or to be chirped to the standardized wavelength grid and for adjusting the optical combiner wavelength grid passband response to approximate the standardized wavelength grid.
摘要:
A method is disclosed for optimizing optical channel signal demultiplexing in a monolithic receiver photonic integrated circuit (RXPIC) chip by providing an integrated channel signal demultiplexing with multiple waveguide input verniers provided to an WDM signal demultiplexer. The RxPIC chip may optionally include an integrated amplifier in at least some of the waveguide input verniers. The RxPIC chip may be comprised of, in monolithic form, a plurality of optional semiconductor optical amplifiers (SOAs) at the input of the chip to receive a WDM signal from an optical link which is provided along a plurality of waveguide input verniers to an integrated optical demultiplexer, such as, but not limited to, an arrayed waveguide grating (AWG), as a WDM signal demultiplexer. Thus, optical outputs from the respective semiconductor laser amplifiers are provided as vernier inputs to the optical demultiplexer forming a plurality of input verniers at the input to the optical demultiplexer. One of the vernier inputs to the chip is selected for operation in the RxPIC chip that corresponds to an optimum performance in matching a WDM channel signal wavelength grid of the received WDM signal to a wavelength grid of the on-chip optical demultiplexer.
摘要:
Method and apparatus for utilizing a probe card for testing in-wafer photonic integrated circuits (PICs) comprising a plurality of in-wafer photonic integrated circuit (PIC) die formed in the surface of a semiconductor wafer where each PIC comprises one or more electro-optic components with formed wafer-surface electrical contacts. The probe card has a probe card body with at least one row of downwardly dependent, electrically conductive contact probes. The probe body is transversely translated over the surface of the wafer to a selected in-wafer photonic integrated circuit (PIC) die. Then, the contact probes of the probe card are brought into engagement with surface electrical contacts of the selected photonic integrated circuit (PIC) die for testing the operation of electro-optic components in the selected in-wafer photonic integrated circuit (PIC) die.
摘要:
An on-chip photodiode is provided in a photonic integrated circuit (PIC) on a semiconductor chip to monitor or check for antireflection qualities of an AR coating applied to the front facet of the semiconductor chip.
摘要:
A laser source or a plurality of laser sources in a photonic integrated circuit (PIC) are provided with an electrical contact that is either segmented or is connected to a series of vernier resistor segments for supply of current to operate the laser source. In either case, at least one segment of the laser contact or at least one vernier resistor segment can be trimmed in order to vary the amount of current supplied to the laser source resulting in a change to its current density and, thus, a change in its operational wavelength while maintaining the current supplied to the laser source constant.
摘要:
A method of operating an array of integrated laser sources formed as an integrated array on a single substrate in a photonic integrated circuit (PIC) where the laser sources are designed for operation at different targeted emission wavelengths which, in toto, at least approximate a grid of spatial emission wavelengths. A first wavelength tuning element is associated with each laser source and is adjusted over time so that each laser source maintains its targeted emission wavelength. As an alternative, the drive current to each laser source may be initially set so that each laser source operates at its targeted emission wavelength. Thereafter, adjustments to retune the laser sources to their targeted emission wavelengths are accomplished by the first wavelength tuning elements. The outputs of the laser sources may be combined via an optical combiner to produce a single combined output from the PIC. A second wavelength tuning element is associated with the optical combiner so that the passband response or wavelength grid of the optical combiner may be also monitored and adjusted to better approximate the wavelength grid of the laser sources.
摘要:
Disclosed is an optical semiconductor device which has a quantum well structure comprising a quantum well made of a zinc oxide or a zinc oxide mixed crystal thin film, and utilizes optical transitions between subbands in the quantum well structure. An element of this device can be formed as a film on a transparent substrate or a plastic substrate at a temperature of 200null C. or lower. The quantum well structure includes a barrier layer made of an insulating material such as ZnMgO; a homologous compound expressed by the following general formula: RMO3(AO)m, wherein RnullSc or In, MnullIn, Fe, Cr, Ga or Al, AnullZn, Mg, Cu, Mn, Fe, Co, Ni or Cd, and mnulla natural number; or (Li, Na)(Ga, Al)O2. The optical semiconductor device is capable of using a transparent or plastic substrate as its substrate, and achieving a high-efficient wide-band light-emitting or receiving device and an ultrafast optical moderation or switching applicable to an optical communication system requiring one terabit/sec or more of data transmission speed.
摘要:
A semiconductor modulator is disclosed which exhibits a negative alpha parameter at low operating bias. The device includes at least two barrier layers with a quantum well layer therebetween. An additional layer is formed adjacent to the quantum well layer, the additional layer having a bulk bandgap energy greater than the quantum well layer so as to form a stepped well between the barrier layers.
摘要:
Optical automatic gain control (AGC) is accomplished using stable, non-absorbing optical hard limiters and various optical logic gates derived therefrom. The AGC mechanism preserves the ratios between signal levels and provides an adjustable amount of gain.
摘要:
A monolithic transmitter photonic integrated circuit (TxPIC) chip comprises an array of modulated sources formed on the PIC chip and having different operating wavelengths according to a standardized wavelength grid and providing signal outputs of different wavelengths. Pluralities of wavelength tuning elements are integrated on the chip, one associated with each of the modulated sources. An optical combiner is formed on the PIC chip and the signal outputs of the modulated sources are optically coupled to one or more inputs of the optical combiner and provided as a combined channel signal output from the combiner. The wavelength tuning elements provide for tuning the operating wavelength of the respective modulated sources to be approximate or to be chirped to the standardized wavelength grid. The wavelength tuning elements are temperature changing elements, current and voltage changing elements or bandgap changing elements.