公开(公告)号：US07750314B2

公开(公告)日：2010-07-06

申请号：US12183787

申请日：2008-07-31

Applicant: William F. DiVergilio

Inventor： William F. DiVergilio

IPC: H01J27/00 ,  H01T23/00

CPC classification number: H01J37/08 ,  H01J2237/0815 ,  H01J2237/31701

Abstract: An elevated temperature RF ion source system, comprising an ion source body, an RF antenna coil external to the ion source body, a vacuum enclosure surrounding both the outside surface of the ion source body and the RF antenna coil, at least one power supply, a gas delivery system operatively coupled to the ion source body, a vacuum condition between the outside surface of the ion source body and the RF antenna coil, the RF antenna coil operatively coupled to the at least one power supply, and a water cooling system operatively coupled to the RF antenna coil and the vacuum enclosure.

Abstract translation: 一种高温RF离子源系统，包括离子源体，离子源体外部的RF天线线圈，围绕离子源体的外表面和RF天线线圈的真空外壳，至少一个电源， 可操作地耦合到离子源体的气体输送系统，离子源体的外表面和RF天线线圈之间的真空条件，可操作地耦合到至少一个电源的RF天线线圈和可操作地连接到水冷系统的水冷系统 耦合到RF天线线圈和真空外壳。

公开(公告)号：US07745803B2

公开(公告)日：2010-06-29

申请号：US10588164

申请日：2005-02-01

Applicant: Ken Nakanishi

Inventor： Ken Nakanishi

IPC: H01J37/04

CPC classification number: H01L29/66757 ,  H01J37/304 ,  H01J2237/0815 ,  H01J2237/31701 ,  H01L21/67115 ,  H01L29/78675

Abstract: An ion doping apparatus includes: a chamber 11; a discharge section 13 for discharging a gaseous content from within the chamber 11; an ion source 12 being provided in the chamber 11 and including an inlet 14 through which to introduce a gas containing an element to be used for doping, the ion source 12 decomposing the gas introduced through the inlet 14 to generate ions containing the element to be used for doping; an acceleration section 23 for pulling out from the ion source 12 the ions generated at the ion source 12 and accelerating the ions toward a target object held in the chamber; and a beam current meter 26 for measuring a beam current caused by the accelerated ions. The beam current is measured by the beam current meter 26 a plurality of times, and if a result of the measurements indicates a stability of the beam current, the ion doping apparatus automatically begins to implant into the target object the ions containing the element to be used for doping. Thus, an ion doping apparatus having excellent doping amount controllability is provided.

Abstract translation: 离子掺杂装置包括：室11; 用于从室11内排出气态物质的排出部13; 离子源12设置在腔室11中并且包括入口14，通过该入口14引入包含用于掺杂的元素的气体，离子源12分解通过入口14引入的气体以产生含有元素的离子 用于掺杂; 用于从离子源12离开在离子源12处产生的离子并将离子加速到保持在腔室中的目标物体的加速部分23; 以及用于测量由加速离子引起的束电流的光束电流计26。 束电流由波束电流计26测量多次，如果测量结果表明射束电流的稳定性，则离子掺杂装置自动开始向目标物体中注入含有元素的离子 用于掺杂。 因此，提供了具有优异的掺杂量可控性的离子掺杂装置。

公开(公告)号：US20100140077A1

公开(公告)日：2010-06-10

申请号：US12328096

申请日：2008-12-04

Applicant: Bon-Woong Koo ,  Victor Benveniste ,  Christopher A. Rowland ,  Craig R. Chaney ,  Frank Sinclair ,  Neil J. Bassom

Inventor： Bon-Woong Koo ,  Victor Benveniste ,  Christopher A. Rowland ,  Craig R. Chaney ,  Frank Sinclair ,  Neil J. Bassom

IPC: B01J19/08 ,  C23C16/513

CPC classification number: H01J27/022 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32412 ,  H01J37/32422 ,  H01J2237/006 ,  H01J2237/061 ,  H01J2237/0815 ,  H01J2237/24514

Abstract: An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.

Abstract translation: 公开了一种利用离子源和/或原子气体注入的离子源。 在离子束施加中，源气体可以直接使用，如通常提供的。 或者或另外，源气体可以在被引入离子源室之前通过将其通过远程等离子体源来改变。 这可以用于产生兴奋的中性粒子，重离子，亚稳分子或多电荷离子。 在另一个实施例中，使用多个气体，其中一个或多个气体通过远程等离子体发生器。 在某些实施方案中，气体在被提供给离子源室之前组合在单个等离子体发生器中。 在等离子体浸渍应用中，通过一个或多个另外的气体注入位置将等离子体注入到处理室中。 这些注入位置允许通过处理室外部的远程等离子体源产生的附加等离子体的流入。

公开(公告)号：US07732787B2

公开(公告)日：2010-06-08

申请号：US11647924

申请日：2006-12-29

Applicant: Thomas Neil Horsky

Inventor： Thomas Neil Horsky

IPC: H01J27/00 ,  H05B31/26

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

Abstract: An ion source is disclosed that is capable of providing ions of decaborane in commercial ion current levels to the ion extraction system of an ion implanter is provided, the ion source comprising an ionization chamber defined by walls enclosing an ionization volume, there being an ion extraction aperture in a side wall of the ionization chamber, arranged to enable the ion current to be extracted from the ionization volume by an extraction system, an electron gun mounted on a support that is outside of and thermally isolated from the walls of the ionization chamber, the ion extraction aperture plate is biased to a negative voltage with respect to the ionization chamber to further increase the drift velocity of the ions, and hence the maximum obtainable current in the resulting ion beam.

Abstract translation: 公开了一种离子源，其能够提供离子注入机的离子提取系统的商业离子电流水平的十硼烷离子，离子源包括由包围电离体积的壁限定的电离室，存在离子提取 电离室的侧壁中的孔径，被布置成能够通过提取系统从离子化体积中提取离子电流，电子枪安装在电离室的外部并与电离室的壁隔离的支撑体上， 离子提取孔板相对于电离室被偏置为负电压，以进一步增加离子的漂移速度，并因此进一步增加所得离子束中的最大可获得电流。

公开(公告)号：US20100068406A1

公开(公告)日：2010-03-18

申请号：US12161301

申请日：2007-01-26

Applicant: Piu Francis Man

Inventor： Piu Francis Man

IPC: B05D1/06 ,  B05C11/00

CPC classification number: H01J49/165 ,  B05D1/60 ,  B05D3/06 ,  B05D3/145 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/168 ,  C01B2202/02 ,  C01B2202/06 ,  C23C4/123 ,  H01J37/08 ,  H01J37/3178 ,  H01J2237/057 ,  H01J2237/0815 ,  H01J2237/31701 ,  H01J2237/31737

Abstract: Disclosed herein are apparatus and methods for selectively depositing molecular ions on nanoscale substrates such as carbon nanotube arrays using electrospray ionization.

Abstract translation: 本文公开了用于使用电喷雾离子化在纳米级基底例如碳纳米管阵列上选择性沉积分子离子的装置和方法。

公开(公告)号：US20100044564A1

公开(公告)日：2010-02-25

申请号：US12516351

申请日：2007-11-29

Applicant: Taku Suziki ,  Yasuhi Yamauchi

Inventor： Taku Suziki ,  Yasuhi Yamauchi

IPC: H01J27/24 ,  G01N23/225

CPC classification number: H01J27/24 ,  G01R33/282 ,  H01J27/18 ,  H01J37/08 ,  H01J2237/0815 ,  H01J2237/24557 ,  H01J2237/25

Abstract: A spin polarized ion beam generation apparatus (30) can efficiently generate a spin polarized ion by using a pumping light generator (33) to an ion in a high frequency discharge tube (15) to irradiate optical pumping (33,34) by circularly polarized light and linearly polarized light orthogonal to each other to a metastable atom. For example, a polarized helium ion beam having a spin polarization rate that exceeds 18% and that is as high as 25% can be generated. The spin polarized ion beam generation apparatus (30) also can be applied to a processing apparatus and an analysis apparatus that can irradiate a polarized ion beam to a specimen. According to the spin polarized ion scattering spectroscopy apparatus, the spin status in a region at a depth of about 2 to 3 atomic layers from the surface of the specimen can be measured while discriminating the elements from the atomic layer with a reduced measurement time and with a high accuracy impossible in the conventional technique.

Abstract translation: 自旋极化离子束产生装置（30）可以通过使用泵送光发生器（33）对高频放电管（15）中的离子来有效地产生自旋极化离子，以通过圆偏振来照射光泵浦（33,34） 与亚稳原子相互正交的光和线偏振光。 例如，可以产生自旋极化率超过18％，高达25％的极化氦离子束。 自旋极化离子束产生装置（30）也可以应用于能够将极化离子束照射到试样的处理装置和分析装置。 根据自旋极化离子散射光谱装置，可以测量从样品表面开始在约2至3个原子层深度的区域中的自旋状态，同时以较小的测量时间来区分元素与原子层，并且与 在常规技术中不可能达到高准确度。

公开(公告)号：US20090236217A1

公开(公告)日：2009-09-24

申请号：US12357592

申请日：2009-01-22

Applicant: Liang-chiun Chao ,  Chung-chi Liau ,  Fu-chieh Tsai

Inventor： Liang-chiun Chao ,  Chung-chi Liau ,  Fu-chieh Tsai

IPC: C23C14/34

CPC classification number: C23C14/086 ,  C23C14/46 ,  H01J37/08 ,  H01J37/3178 ,  H01J2237/006 ,  H01J2237/061 ,  H01J2237/0815

Abstract: A capillaritron ion beam sputtering system and a thin film production method are disclosed. By utilizing reactive capillaritron ion beam sputtering deposition, argon and oxygen are passed through a capillaritron ion source simultaneously. Argon is being ionized and accelerated by a voltage to bombard a zinc target and create zinc atoms, while oxygen atoms are created at the same time. Zinc atom and oxygen atom are combined to form ZnO to deposit on a substrate. The stoichiometric properties, deposition rate, transmission properties, surface roughness and film density of the as-deposited film can be altered by adjusting capillaritron ion beam energy and oxygen partial pressure. Using preferred processing parameters, the root-mean-square surface roughness of the as-deposited film can be smaller than 1.5 nm, while the transmission coefficient at visible range can be greater than 80%.

Abstract translation: 公开了一种毛细管离子束溅射系统和薄膜制造方法。 通过利用反应性毛细管离子束溅射沉积，氩和氧同时通过毛细管离子源。 氩被电离电离并加速以轰击锌靶并产生锌原子，同时产生氧原子。 锌原子和氧原子结合形成ZnO沉积在基底上。 通过调节毛细管离子束能量和氧分压可以改变沉积膜的化学计量特性，沉积速率，透射性能，表面粗糙度和膜密度。 使用优选的处理参数，沉积膜的均方根表面粗糙度可以小于1.5nm，而可见光范围内的透射系数可以大于80％。

公开(公告)号：US07544952B2

公开(公告)日：2009-06-09

申请号：US11576945

申请日：2005-04-08

Applicant: Makoto Sakurai ,  Fumiharu Nakajima ,  Takunori Fukumoto ,  Nobuyuki Nakamura ,  Shunsuke Ohtani ,  Shinro Mashiko

Inventor： Makoto Sakurai ,  Fumiharu Nakajima ,  Takunori Fukumoto ,  Nobuyuki Nakamura ,  Shunsuke Ohtani ,  Shinro Mashiko

IPC: H01J27/20

CPC classification number: H01J27/205 ,  H01J37/04 ,  H01J37/08 ,  H01J37/3056 ,  H01J2237/057 ,  H01J2237/061 ,  H01J2237/0815 ,  H01J2237/16 ,  H01J2237/31701 ,  H01J2237/31735

Abstract: A multicharged ions generating source that is easy to manufacture, excellent in controllability and maintainability, high in degree of ionization and large in beam intensity and a charged particle beam apparatus using the same are disclosed. The multicharged ions generating source includes an ion source electrode (3) comprising an electron source (4), a drift tube (5) that constitutes an ion trapping region and a collector (6), a superconducting magnet (11) for ion entrapment, an ion infeed means (20, 22), a first vacuum chamber (2) receiving the ion source electrode (3), a second vacuum chamber (10) receiving the superconducting magnet (11), and a vacuum pumping unit (15, 16) provided for each of the first and second vacuum chambers. The first and the second vacuum chambers (2) and (10) are made removable from each other, and only the ion source electrode (3) to be held at extremely high vacuum can be baked for degassing.

Abstract translation: 公开了易于制造的多电荷离子产生源，可控性和可维护性优异，电离度高和束强度大的带电粒子束装置。 多电荷离子产生源包括离子源电极（3），其包括电子源（4），构成离子捕获区域的漂移管（5）和集电体（6），用于离子俘获的超导磁体（11） 离子馈入装置（20,22），接收离子源极（3）的第一真空室（2），接收超导磁体（11）的第二真空室（10）和真空泵送单元 ）设置在第一和第二真空室中。 第一和第二真空室（2）和（10）可以相互脱离，只能保持在极高真空的离子源电极（3）进行脱气。

公开(公告)号：US20090032724A1

公开(公告)日：2009-02-05

申请号：US12135464

申请日：2008-06-09

Applicant: Paulo Lozano ,  Manuel Martinez-Sanchez

Inventor： Paulo Lozano ,  Manuel Martinez-Sanchez

IPC: H01J3/18

CPC classification number: H01J37/08 ,  H01J27/028 ,  H01J27/26 ,  H01J2237/0048 ,  H01J2237/08 ,  H01J2237/0815 ,  H01J2237/0827 ,  H01J2237/31749

Abstract: An apparatus for producing negative ions including an emitter coated with an ionic liquid room-temperature molten salt, an electrode positioned downstream relative to the emitter, a power supply that applies a voltage to the emitter with respect to the electrode. The power supply is sufficient to generate a stable high brightness beam of negative ions having minimal chromatic and spherical aberrations in the beam. An electrostatic lens and deflector is used to focus and direct the beam to a target.

Abstract translation: 一种用于产生负离子的装置，包括涂覆有离子液体室温熔融盐的发射体，位于发射极下游的电极，相对于电极向发射极施加电压的电源。 电源足以产生稳定的高亮度的负离子束，该束具有在光束中最小的色差和球面像差。 静电透镜和偏转器用于聚焦并将光束引导到目标。

公开(公告)号：US20090001290A1

公开(公告)日：2009-01-01

申请号：US12097779

申请日：2007-05-17

Applicant: Takatoshi Yamashita

Inventor： Takatoshi Yamashita

IPC: A61N5/00

CPC classification number: H01J27/14 ,  H01J37/08 ,  H01J2237/0815 ,  H01J2237/24542 ,  H01J2237/30472 ,  H01J2237/31701

Abstract: An ion source is provided that can generate an ion beam in which the width is wide, the beam current is large, and the uniformity of the beam current distribution in the width direction is high, and that can prolong the lifetime of a cathode.The ion source 2a has: a plasma generating chamber 6 having an ion extraction port 8 extending in the X direction; a magnet 14 which generates a magnetic field 16 extending along the X direction, in the plasma generating chamber 6; indirectly-heated cathodes 20 which are placed respectively on the both sides of the plasma generating chamber 6 in the X direction, and which are used for generating a plasma 10 in the chamber 6, and increasing or decreasing the density of the whole of the plasma 10; and plural filament cathodes 32 which are juxtaposed in the X direction in the plasma generating chamber 6, and which are used for generating the plasma 10 in the chamber 6, and controlling the density distribution of the plasma 10.

Abstract translation: 提供一种可以产生宽度宽的离子束，束流量大，宽度方向的束流分布均匀性高的离子源，能够延长阴极的使用寿命。 离子源2a具有：等离子体产生室6，其具有在X方向上延伸的离子提取口8; 在等离子体产生室6中产生沿着X方向延伸的磁场16的磁铁14; 间接加热的阴极20分别放置在等离子体发生室6的X方向的两侧，用于在室6中产生等离子体10，并且增加或减小整个等离子体的密度 10; 以及多个长丝阴极32，其在等离子体发生室6中沿X方向并置，并且用于在室6中产生等离子体10，并且控制等离子体10的密度分布。