公开(公告)号：US20090311879A1

公开(公告)日：2009-12-17

申请号：US12303165

申请日：2006-06-02

Applicant: Nicolas Blasco ,  Christian Dussarrat

Inventor： Nicolas Blasco ,  Christian Dussarrat

IPC: H01L21/316 ,  H01B1/02

CPC classification number: H01L21/02205 ,  C07F7/00 ,  C07F7/003 ,  C07F17/00 ,  C23C16/18 ,  C23C16/308 ,  C23C16/34 ,  C23C16/40 ,  C23C16/403 ,  C23C16/405 ,  C23C16/407 ,  C23C16/45553 ,  H01L21/02148 ,  H01L21/02159 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31641 ,  H01L21/31645

Abstract: A method of forming on at least one support at least one metal containing dielectric films having the formula (M11-a M2a) Ob Nc, wherein: 0≦a

Abstract translation: 在至少一种载体上形成具有式（M11-a M2a）Ob Nc的至少一种含金属介电膜的方法，其中：0 <= a <1,0和M2是金属Hf，Zr或Ti， 戊二烯基配体和/或环戊二烯基配体。

公开(公告)号：US20090289328A1

公开(公告)日：2009-11-26

申请号：US12470873

申请日：2009-05-22

Applicant: Masami Tanioku

Inventor： Masami Tanioku

IPC: H01L29/92 ,  H01G4/06 ,  E04B1/76

CPC classification number: H01G4/10 ,  H01G4/08 ,  H01L21/02175 ,  H01L21/02183 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/02266 ,  H01L21/31604 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/91

Abstract: An insulation film includes niobium, oxygen and a metal element, and the insulation film has a band gap width of larger than 4.2 eV, and at least a portion of the insulation film includes an amorphous structure.

Abstract translation: 绝缘膜包括铌，氧和金属元素，并且绝缘膜具有大于4.2eV的带隙宽度，绝缘膜的至少一部分包括非晶结构。

公开(公告)号：US07622340B2

公开(公告)日：2009-11-24

申请号：US11523566

申请日：2006-09-20

Applicant: Yasushi Akasaka ,  Genji Nakamura

Inventor： Yasushi Akasaka ,  Genji Nakamura

IPC: C12N9/22

CPC classification number: H01L21/02329 ,  H01L21/0206 ,  H01L21/02126 ,  H01L21/02148 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02181 ,  H01L21/02194 ,  H01L21/0234 ,  H01L21/31111 ,  H01L21/3115 ,  H01L21/3144 ,  H01L21/3185 ,  H01L21/32139 ,  H01L21/823842 ,  H01L29/66545

Abstract: A method for manufacturing a semiconductor device includes doping a surface of a silicon-containing dielectric film with nitrogen to change an etching rate of the silicon-containing dielectric film relative to a predetermined solution such that the etching rate is lower at a surface portion doped with nitrogen than at a portion therebelow. The method subsequently includes patterning the silicon-containing dielectric film by a first etching process to form an etching mask, subsequently to the first etching process, removing etching residues of the silicon-containing dielectric film by a second etching process including wet etching using the predetermined solution, and subsequently to the second etching process, patterning an etching target film by a third etching process using the etching mask.

Abstract translation: 一种制造半导体器件的方法，包括用氮掺杂含硅电介质膜的表面，以改变含硅电介质膜相对于预定溶液的蚀刻速率，使得在掺杂有 氮比在下面的部分。 该方法随后包括通过第一蚀刻工艺图案化含硅电介质膜以形成蚀刻掩模，在第一蚀刻工艺之后，通过第二蚀刻工艺去除含硅电介质膜的蚀刻残留物，包括使用预定的 溶液，随后到第二蚀刻工艺，通过使用蚀刻掩模的第三蚀刻工艺对蚀刻靶膜进行图案化。

公开(公告)号：US07588988B2

公开(公告)日：2009-09-15

申请号：US10931533

申请日：2004-08-31

Applicant: Kie Y. Ahn ,  Leonard Forbes

Inventor： Kie Y. Ahn ,  Leonard Forbes

IPC: H01L21/336 ,  H01L21/31

CPC classification number: H01L21/0228 ,  C23C16/0281 ,  C23C16/40 ,  C23C16/45531 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/02337 ,  H01L21/28229 ,  H01L21/3141 ,  H01L21/3142 ,  H01L29/513 ,  H01L29/517

Abstract: A dielectric layer containing an atomic layer deposited insulating metal oxide film having multiple metal components and a method of fabricating such a dielectric layer produce a reliable dielectric layer for use in a variety of electronic devices. Embodiments include conducting a number of annealing processes between a number of atomic layer deposition cycles for forming the metal oxide film. In an embodiment, a titanium aluminum oxide film is formed. Embodiments include structures for capacitors, transistors, memory devices, and electronic systems with dielectric layers containing an atomic layer deposited titanium aluminum oxide film, and methods for forming such structures.

Abstract translation: 包含具有多个金属成分的原子层沉积的绝缘金属氧化物膜的电介质层和制造这种电介质层的方法产生用于各种电子器件的可靠的电介质层。 实施例包括在用于形成金属氧化物膜的多个原子层沉积循环之间进行多个退火处理。 在一个实施方案中，形成氧化钛铝膜。 实施例包括用于电容器，晶体管，存储器件和具有包含原子层沉积的钛铝氧化物膜的电介质层的电子系统的结构，以及用于形成这种结构的方法。

公开(公告)号：US20090194797A1

公开(公告)日：2009-08-06

申请号：US12358466

申请日：2009-01-23

Applicant: Tatsuo SHIMIZU ,  Masato KOYAMA

Inventor： Tatsuo SHIMIZU ,  Masato KOYAMA

IPC: H01L29/78 ,  C09K3/00

CPC classification number: H01L29/517 ,  H01L21/02145 ,  H01L21/02148 ,  H01L21/02153 ,  H01L21/02156 ,  H01L21/02159 ,  H01L21/02161 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/02271 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28194 ,  H01L21/31155 ,  H01L21/316 ,  H01L21/318 ,  H01L28/40 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/788 ,  H01L29/792

Abstract: It is made possible to provide an insulating film that can reduce the leakage current. An insulating film includes: an amorphous oxide dielectric film containing a metal, hydrogen, and nitrogen. The nitrogen amount [N] and the hydrogen amount [H] in the oxide dielectric film satisfy the following relationship: {[N]−[H]}/2≦1.0×1021 cm−3.

Abstract translation: 可以提供能够减小漏电流的绝缘膜。 绝缘膜包括：含有金属，氢和氮的非晶氧化物介电膜。 氧化物介电膜中的氮量[N]和氢量[H]满足以下关系：{[N] - [H]} / 2 <= 1.0×10 21 cm -3。

公开(公告)号：US07566608B2

公开(公告)日：2009-07-28

申请号：US11285555

申请日：2005-11-22

Applicant: Dae-Sik Choi ,  Kyoung-Ryul Yoon ,  Han-Mei Choi ,  Ki-Yeon Park ,  Seung-Hwan Lee ,  Sung-Tae Kim ,  Young-Sun Kim ,  Cha-Young Yoo

Inventor： Dae-Sik Choi ,  Kyoung-Ryul Yoon ,  Han-Mei Choi ,  Ki-Yeon Park ,  Seung-Hwan Lee ,  Sung-Tae Kim ,  Young-Sun Kim ,  Cha-Young Yoo

IPC: H01L21/8238

CPC classification number: H01L21/02205 ,  C23C16/405 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/28194 ,  H01L21/28273 ,  H01L21/3142 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/11521 ,  H01L29/4933 ,  H01L29/517 ,  H01L29/78

Abstract: Methods of forming a zirconium hafnium oxide thin layer on a semiconductor substrate by supplying tetrakis(ethylmethylamino)zirconium ([Zr{N(C2H5)(CH3)}4], TEMAZ) and tetrakis(ethylmethylamino)hafnium ([Hf{N(C2H5)(CH3)}4], TEMAH) to a substrate are provided. The TEMAZ and the TEMAH may be reacted with an oxidizing agent. The thin layer including zirconium hafnium oxide may be used for a gate insulation layer in a gate structure, a dielectric layer in a capacitor, or a dielectric layer in a flash memory device.

Abstract translation: 通过供应四（乙基甲基氨基）锆（[Zr（N（C 2 H 5）（CH 3）} 4]，TEMAZ）和四（乙基甲基氨基）铪（[Hf（N（C 2 H 5））的方式在半导体衬底上形成氧化锆铪薄膜 ）（CH 3）} 4]，TEMAH）。 TEMAZ和TEMAH可与氧化剂反应。 包括氧化铪的薄层可以用于栅极结构中的栅极绝缘层，电容器中的电介质层或闪存器件中的介电层。

公开(公告)号：US07560395B2

公开(公告)日：2009-07-14

申请号：US11029757

申请日：2005-01-05

Applicant: Kie Y. Ahn ,  Leonard Forbes

Inventor： Kie Y. Ahn ,  Leonard Forbes

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/0228 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/02318 ,  H01L21/28194 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/3141 ,  H01L21/31637 ,  H01L21/31645 ,  H01L29/4908 ,  H01L29/517

Abstract: A dielectric layer containing hafnium tantalum film arranged as a structure of one or more monolayers and a method of fabricating such a dielectric layer produce a dielectric layer for use in a variety of electronic devices. In an embodiment, a hafnium tantalum oxide film may be formed by depositing hafnium and tantalum by atomic layer deposition onto a substrate surface. Embodiments include structures for capacitors, transistors, memory devices, and electronic systems with dielectric layers containing a hafnium tantalum oxide film arranged as a structure of one or more monolayers, and methods for forming such structures.

Abstract translation: 布置为一个或多个单层的结构的包含铪钽膜的电介质层和制造这种电介质层的方法产生用于各种电子器件的电介质层。 在一个实施例中，可以通过将原子层沉积的铪和钽沉积到衬底表面上来形成铪钽氧化物膜。 实施例包括用于电容器，晶体管，存储器件和具有布置为一个或多个单层的结构的铪钽氧化物膜的电介质层的电子系统的结构，以及用于形成这种结构的方法。

公开(公告)号：US07544604B2

公开(公告)日：2009-06-09

申请号：US11514545

申请日：2006-08-31

Applicant: Leonard Forbes ,  Kie Y. Ahn ,  Arup Bhattacharyya

Inventor： Leonard Forbes ,  Kie Y. Ahn ,  Arup Bhattacharyya

IPC: H01L21/20

CPC classification number: H01L21/02194 ,  C23C14/20 ,  C23C16/308 ,  C23C16/34 ,  C23C16/40 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28202 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/31637 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Electronic apparatus and methods of forming the electronic apparatus include a tantalum lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The tantalum lanthanide oxynitride film may be structured as one or more monolayers. Metal electrodes may be disposed on a dielectric containing a tantalum lanthanide oxynitride film.

Abstract translation: 形成电子设备的电子设备和方法包括用于各种电子系统的基板上的钽镧系元素氮氧化物膜。 钽镧系氮氧化物膜可以被构造为一个或多个单层。 金属电极可以设置在包含钽镧系元素氮氧化物膜的电介质上。

公开(公告)号：US07514316B2

公开(公告)日：2009-04-07

申请号：US11133271

申请日：2005-05-20

Applicant: Yoshihiro Sugita

Inventor： Yoshihiro Sugita

IPC: H01L21/8242

CPC classification number: H01L21/28194 ,  H01L21/02145 ,  H01L21/02156 ,  H01L21/02161 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/02337 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31662 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: A p-well (12) is formed on a surface of an Si substrate (11) and element isolation insulating films (13) are formed. Next, a thin SiO2 film (14a) is formed on the whole surface, and an oxide film containing a rare earth metal (for example, lanthanum (La) or yttrium (Y)) and aluminum (Al) is formed thereon as an insulating film (14b). Furthermore, a polysilicon film (15) is formed on the insulating film (14b). After that, the SiO2 film (14a) and the insulating film (14b) are allowed to react with each other by performing a heat treatment, for example, at approximately 1000° C. to form a silicate film containing the rare earth metal and Al. In a word, the SiO2 film (14a) and the insulating film (14b) are allowed to be a single silicate film.

Abstract translation: 在Si衬底（11）的表面上形成p阱（12），形成元件隔离绝缘膜（13）。 接下来，在整个表面上形成薄的SiO 2膜（14a），并且在其上形成含有稀土金属（例如镧（La）或钇（Y））和铝（Al）的氧化膜作为绝缘 薄膜（14b）。 此外，在绝缘膜（14b）上形成多晶硅膜（15）。 之后，通过进行例如约1000℃的热处理，使SiO 2膜（14a）和绝缘膜（14b）发生反应，形成含有稀土金属和Al的硅酸盐膜 。 总而言之，使SiO 2膜（14a）和绝缘膜（14b）成为单一的硅酸盐膜。

公开(公告)号：US20090085082A1

公开(公告)日：2009-04-02

申请号：US11863211

申请日：2007-09-27

Applicant: Gilbert Dewey ,  Matthew Metz ,  Jack Kavalieros ,  Robert Chau

Inventor： Gilbert Dewey ,  Matthew Metz ,  Jack Kavalieros ,  Robert Chau

IPC: H01L29/94 ,  H01L23/58 ,  H01L21/8242 ,  H01L21/31

CPC classification number: H01L21/02189 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02181 ,  H01L21/02194 ,  H01L21/02266 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31641 ,  H01L21/31645 ,  H01L28/40

Abstract: Controlled deposition of HfO2 and ZrO2 dielectrics is generally described. In one example, a microelectronic apparatus includes a substrate and a dielectric film coupled with the substrate, the dielectric film including ZrO2 and HfO2 wherein the ratio of Zr to Hf in the dielectric film is about 5 to 10 atoms of Zr for every 1 atom of Hf to reduce ToxE or reduce Jox of the dielectric film.

Abstract translation: 通常描述HfO 2和ZrO 2电介质的受控沉积。 在一个示例中，微电子装置包括衬底和与衬底耦合的电介质膜，电介质膜包括ZrO 2和HfO 2，其中介电膜中的Zr与Hf的比率为每1个原子的约5至10个原子的Zr Hf以减少ToxE或减少电介质膜的Jox。