Anisotropic etching using photosensitive compound

    公开(公告)号:US11937379B2

    公开(公告)日:2024-03-19

    申请号:US17301130

    申请日:2021-03-25

    发明人: Jolanta Klocek

    IPC分类号: H05K3/06

    CPC分类号: H05K3/067 H05K3/062 H05K3/068

    摘要: A method of etching an electrically conductive layer structure during manufacturing a component carrier is provided. The method includes subjecting the electrically conductive layer structure to an etching composition having an etchant and a photosensitive compound to thereby form a recess in the electrically conductive layer structure; while, at least for a part of time, irradiating and/or heating the recess. In addition, an apparatus for etching an electrically conductive layer structure during manufacturing a component carrier, an etched electrically conductive layer structure and a component carrier are provided.