公开(公告)号：US20060110467A1

公开(公告)日：2006-05-25

申请号：US11269158

申请日：2005-11-08

申请人： Weihui Huang ,  Yumin Cui ,  Jian Zuo ,  Weihan Zhang ,  Weiwei Wu ,  Jianhua Yan

发明人： Weihui Huang ,  Yumin Cui ,  Jian Zuo ,  Weihan Zhang ,  Weiwei Wu ,  Jianhua Yan

IPC分类号： A61K33/24 ,  A61K31/225 ,  A61K31/12

CPC分类号： A61K31/12 ,  A61K31/225 ,  A61K33/24 ,  A61K2300/00

摘要： This invention relates to a method of treating cancer by administering to a subject in need thereof an effective amount of a chemotherapeutic agent and an effective amount of a diterpene compound of the following formula: wherein R1, R2, R3, R4, and R5 are defined herein.

摘要翻译： 本发明涉及通过向有需要的受试者施用有效量的化学治疗剂和有效量的下式的双萜化合物来治疗癌症的方法：其中R 1，R 2， 本文定义了R 2，R 3，R 4和R 5。

公开(公告)号：US20050288379A1

公开(公告)日：2005-12-29

申请号：US11156211

申请日：2005-06-17

申请人： Xiaoqiang Yan ,  Yumin Cui ,  Jianhua Yan ,  Weihan Zhang ,  Jifeng Duan ,  Jian Zuo

发明人： Xiaoqiang Yan ,  Yumin Cui ,  Jianhua Yan ,  Weihan Zhang ,  Jifeng Duan ,  Jian Zuo

IPC分类号： A61K31/12

CPC分类号： A61K31/12

摘要： This invention relates to a method of treating certain cancers by administering an effective amount of a compound of the following formula: wherein R1, R2, R3, and R4 are defined herein.

摘要翻译： 本发明涉及通过施用有效量的下式化合物来治疗某些癌症的方法：其中R 1，R 2，R 3， / SUB＆gt;和R 4＆gt;在本文中定义。

公开(公告)号：US20130140691A1

公开(公告)日：2013-06-06

申请号：US13312730

申请日：2011-12-06

申请人： Xusheng Bao ,  Ma Phoo Pwint Hlaing ,  Jian Zuo

发明人： Xusheng Bao ,  Ma Phoo Pwint Hlaing ,  Jian Zuo

IPC分类号： H01L23/498 ,  H01L21/28

CPC分类号： H01L24/11 ,  H01L23/3114 ,  H01L23/525 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/94 ,  H01L2224/02313 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0332 ,  H01L2224/034 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/035 ,  H01L2224/03505 ,  H01L2224/0361 ,  H01L2224/03632 ,  H01L2224/0401 ,  H01L2224/05011 ,  H01L2224/05012 ,  H01L2224/05024 ,  H01L2224/05073 ,  H01L2224/05086 ,  H01L2224/05088 ,  H01L2224/05093 ,  H01L2224/05094 ,  H01L2224/05095 ,  H01L2224/05096 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05583 ,  H01L2224/05624 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05687 ,  H01L2224/1111 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11466 ,  H01L2224/118 ,  H01L2224/11849 ,  H01L2224/11916 ,  H01L2224/13006 ,  H01L2224/13011 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13078 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13553 ,  H01L2224/1357 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/94 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/301 ,  H01L2924/01013 ,  H01L2924/0105 ,  H01L2924/01028 ,  H01L2924/01079 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/00014 ,  H01L2924/00013 ,  H01L2924/01074 ,  H01L2924/01007 ,  H01L2924/01023 ,  H01L2924/04941 ,  H01L2924/014 ,  H01L2924/01082 ,  H01L2224/11 ,  H01L2924/00

摘要： A semiconductor device has a semiconductor wafer with a first conductive layer formed over a surface of the semiconductor wafer. A first insulating layer is formed over the surface of the semiconductor wafer and first conductive layer. A second conductive layer is formed over the first insulating layer and first conductive layer. A second insulating layer is formed over the first insulating layer and second conductive layer. A plurality of openings is formed in the second insulating layer in a bump formation area of the semiconductor wafer to expose the second conductive layer and reduce adverse effects of electro-migration. The openings are separated by portions of the second insulating layer. A UBM layer is formed over the openings in the second insulating layer in the bump formation area electrically connected to the second conductive layer. A bump is formed over the UBM layer.

公开(公告)号：US20130134580A1

公开(公告)日：2013-05-30

申请号：US13307849

申请日：2011-11-30

申请人： Xusheng Bao ,  Ma Phoo Pwint Hlaing ,  Jian Zuo

发明人： Xusheng Bao ,  Ma Phoo Pwint Hlaing ,  Jian Zuo

IPC分类号： H01L23/485 ,  H01L21/768

CPC分类号： H01L24/14 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L2224/02125 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/02375 ,  H01L2224/02377 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05173 ,  H01L2224/05187 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/05569 ,  H01L2224/05583 ,  H01L2224/05613 ,  H01L2224/05624 ,  H01L2224/05666 ,  H01L2224/05687 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11901 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/14131 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2224/0231 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01028 ,  H01L2924/01079 ,  H01L2924/01047 ,  H01L2924/04953 ,  H01L2924/01074 ,  H01L2924/01007 ,  H01L2924/01023 ,  H01L2924/04941 ,  H01L2924/01082 ,  H01L2224/11849 ,  H01L2224/11 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552

摘要： A semiconductor device has a semiconductor wafer with a plurality of semiconductor die. A first conductive layer is formed over a surface of the wafer. A first insulating layer is formed over the surface of the wafer and first conductive layer. A second conductive layer has first and second segments formed over the first insulating layer. A second insulating layer is formed over the first insulating layer and second conductive layer. A UBM layer is formed over the second insulating layer and the first segment of the second conductive layer. A first bump is formed over the UBM layer. The first bump is electrically connected to the second segment and electrically isolated from the first segment of the second conductive layer. A second bump is formed over the surface of the wafer and electrically connected to the first segment of the second conductive layer.

摘要翻译： 半导体器件具有带有多个半导体管芯的半导体晶片。 在晶片的表面上形成第一导电层。 在晶片和第一导电层的表面上形成第一绝缘层。 第二导电层具有形成在第一绝缘层上的第一和第二部分。 在第一绝缘层和第二导电层上形成第二绝缘层。 UBM层形成在第二绝缘层和第二导电层的第一段之上。 在UBM层上形成第一凸点。 第一凸起电连接到第二段并与第二导电层的第一段电隔离。 第二凸起形成在晶片的表面上并电连接到第二导电层的第一段。

公开(公告)号：US20120256935A1

公开(公告)日：2012-10-11

申请号：US13517315

申请日：2011-01-24

申请人： Jian Zuo

发明人： Jian Zuo

IPC分类号： G09G3/36 ,  G09G5/36

CPC分类号： G06F9/4401 ,  G09G5/395 ,  G09G5/399 ,  G09G2330/026

摘要： A method and a mobile terminal for controlling display of waiting information during program startup are disclosed, relating to the field of computers. In the invention, a step of initializing a liquid crystal display (LCD) by a kernel is eliminated, and an LCD controller is reinitialized after the waiting information data in a bootloader display memory is copied to the display memory of the kernel, therefore, the LCD can directly read the waiting information data in the display memory of the kernel according to a display memory first address in the LCD controller. The waiting information data in the bootloader display memory is copied to the display memory of the kernel in advance, therefore, the displayed content is not changed completely for users. In addition, the step of initializing the LCD is eliminated, so that the phenomena of distortion, flashing, blurred screen and the like of the LCD screen display are completely avoided, the display quality during program startup is improved, and better visual experience is brought for users.

摘要翻译： 公开了一种用于在程序启动期间控制等待信息显示的方法和移动终端，涉及计算机领域。 在本发明中，消除了由内核初始化液晶显示器（LCD）的步骤，并且在引导加载器显示存储器中的等待信息数据被复制到内核的显示存储器之后，LCD控制器被重新初始化，因此， LCD可以根据LCD控制器中的显示存储器第一地址直接读取内核的显示存储器中的等待信息数据。 引导加载程序显示存储器中的等待信息数据被预先复制到内核的显示存储器，因此显示的内容不会被用户完全改变。 此外，消除了初始化LCD的步骤，从而完全避免了LCD屏幕显示的失真，闪烁，屏幕等模糊现象，提高了程序启动期间的显示质量，并提供了更好的视觉体验 为用户。

公开(公告)号：US09201660B2

公开(公告)日：2015-12-01

申请号：US13517315

申请日：2011-01-24

申请人： Jian Zuo

发明人： Jian Zuo

IPC分类号： G06F9/44 ,  G09G5/395 ,  G09G5/399

CPC分类号： G06F9/4401 ,  G09G5/395 ,  G09G5/399 ,  G09G2330/026

摘要： A method and a mobile terminal for controlling display of waiting information during program startup are disclosed, relating to the field of computers. In the invention, a step of initializing a liquid crystal display (LCD) by a kernel is eliminated, and an LCD controller is reinitialized after the waiting information data in a bootloader display memory is copied to the display memory of the kernel, therefore, the LCD can directly read the waiting information data in the display memory of the kernel according to a display memory first address in the LCD controller. The waiting information data in the bootloader display memory is copied to the display memory of the kernel in advance, therefore, the displayed content is not changed completely for users. In addition, the step of initializing the LCD is eliminated, so that the phenomena of distortion, flashing, blurred screen and the like of the LCD screen display are completely avoided, the display quality during program startup is improved, and better visual experience is brought for users.

摘要翻译： 公开了一种用于在程序启动期间控制等待信息显示的方法和移动终端，涉及计算机领域。 在本发明中，消除了由内核初始化液晶显示器（LCD）的步骤，并且在引导加载器显示存储器中的等待信息数据被复制到内核的显示存储器之后，LCD控制器被重新初始化，因此， LCD可以根据LCD控制器中的显示存储器第一地址直接读取内核的显示存储器中的等待信息数据。 引导加载程序显示存储器中的等待信息数据被预先复制到内核的显示存储器，因此显示的内容不会被用户完全改变。 此外，消除了初始化LCD的步骤，从而完全避免了LCD屏幕显示的失真，闪烁，屏幕等模糊现象，提高了程序启动期间的显示质量，并提供了更好的视觉体验 为用户。

公开(公告)号：US09142522B2

公开(公告)日：2015-09-22

申请号：US13307849

申请日：2011-11-30

申请人： Xusheng Bao ,  Ma Phoo Pwint Hlaing ,  Jian Zuo

发明人： Xusheng Bao ,  Ma Phoo Pwint Hlaing ,  Jian Zuo

IPC分类号： H01L23/485 ,  H01L21/768 ,  H01L23/00

CPC分类号： H01L24/14 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L2224/02125 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/02375 ,  H01L2224/02377 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05173 ,  H01L2224/05187 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/05569 ,  H01L2224/05583 ,  H01L2224/05613 ,  H01L2224/05624 ,  H01L2224/05666 ,  H01L2224/05687 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11901 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/14131 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2224/0231 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01028 ,  H01L2924/01079 ,  H01L2924/01047 ,  H01L2924/04953 ,  H01L2924/01074 ,  H01L2924/01007 ,  H01L2924/01023 ,  H01L2924/04941 ,  H01L2924/01082 ,  H01L2224/11849 ,  H01L2224/11 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552

摘要： A semiconductor device has a semiconductor wafer with a plurality of semiconductor die. A first conductive layer is formed over a surface of the wafer. A first insulating layer is formed over the surface of the wafer and first conductive layer. A second conductive layer has first and second segments formed over the first insulating layer. A second insulating layer is formed over the first insulating layer and second conductive layer. A UBM layer is formed over the second insulating layer and the first segment of the second conductive layer. A first bump is formed over the UBM layer. The first bump is electrically connected to the second segment and electrically isolated from the first segment of the second conductive layer. A second bump is formed over the surface of the wafer and electrically connected to the first segment of the second conductive layer.

摘要翻译： 半导体器件具有带有多个半导体管芯的半导体晶片。 在晶片的表面上形成第一导电层。 在晶片和第一导电层的表面上形成第一绝缘层。 第二导电层具有形成在第一绝缘层上的第一和第二部分。 在第一绝缘层和第二导电层上形成第二绝缘层。 UBM层形成在第二绝缘层和第二导电层的第一段之上。 在UBM层上形成第一凸点。 第一凸起电连接到第二段并与第二导电层的第一段电隔离。 第二凸起形成在晶片的表面上并电连接到第二导电层的第一段。

公开(公告)号：US08963326B2

公开(公告)日：2015-02-24

申请号：US13312730

申请日：2011-12-06

申请人： Xusheng Bao ,  Ma Phoo Pwint Hlaing ,  Jian Zuo

发明人： Xusheng Bao ,  Ma Phoo Pwint Hlaing ,  Jian Zuo

IPC分类号： H01L23/498

CPC分类号： H01L24/11 ,  H01L23/3114 ,  H01L23/525 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/94 ,  H01L2224/02313 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0332 ,  H01L2224/034 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/035 ,  H01L2224/03505 ,  H01L2224/0361 ,  H01L2224/03632 ,  H01L2224/0401 ,  H01L2224/05011 ,  H01L2224/05012 ,  H01L2224/05024 ,  H01L2224/05073 ,  H01L2224/05086 ,  H01L2224/05088 ,  H01L2224/05093 ,  H01L2224/05094 ,  H01L2224/05095 ,  H01L2224/05096 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05583 ,  H01L2224/05624 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05687 ,  H01L2224/1111 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11466 ,  H01L2224/118 ,  H01L2224/11849 ,  H01L2224/11916 ,  H01L2224/13006 ,  H01L2224/13011 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13078 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13553 ,  H01L2224/1357 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/94 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/301 ,  H01L2924/01013 ,  H01L2924/0105 ,  H01L2924/01028 ,  H01L2924/01079 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/00014 ,  H01L2924/00013 ,  H01L2924/01074 ,  H01L2924/01007 ,  H01L2924/01023 ,  H01L2924/04941 ,  H01L2924/014 ,  H01L2924/01082 ,  H01L2224/11 ,  H01L2924/00

摘要： A semiconductor device has a semiconductor wafer with a first conductive layer formed over a surface of the semiconductor wafer. A first insulating layer is formed over the surface of the semiconductor wafer and first conductive layer. A second conductive layer is formed over the first insulating layer and first conductive layer. A second insulating layer is formed over the first insulating layer and second conductive layer. A plurality of openings is formed in the second insulating layer in a bump formation area of the semiconductor wafer to expose the second conductive layer and reduce adverse effects of electro-migration. The openings are separated by portions of the second insulating layer. A UBM layer is formed over the openings in the second insulating layer in the bump formation area electrically connected to the second conductive layer. A bump is formed over the UBM layer.

摘要翻译： 半导体器件具有在半导体晶片的表面上形成有第一导电层的半导体晶片。 在半导体晶片和第一导电层的表面上形成第一绝缘层。 在第一绝缘层和第一导电层上形成第二导电层。 在第一绝缘层和第二导电层上形成第二绝缘层。 在半导体晶片的凸块形成区域中的第二绝缘层中形成多个开口以暴露第二导电层并减少电迁移的不利影响。 开口由第二绝缘层的一部分分开。 UBM层形成在电连接到第二导电层的凸块形成区域中的第二绝缘层的开口上方。 在UBM层上形成凸点。

公开(公告)号：US20060160895A1

公开(公告)日：2006-07-20

申请号：US11292321

申请日：2005-12-01

申请人： Weihui Huang ,  Yumin Cui ,  Jian Zuo ,  Weihan Zhang

发明人： Weihui Huang ,  Yumin Cui ,  Jian Zuo ,  Weihan Zhang

IPC分类号： A61K31/22 ,  A61K31/12

CPC分类号： A61K31/12 ,  A61K31/22

摘要： This invention relates to a method of treating gastric adenocarcinoma or lung carcinoma by administering to a subject in need thereof an effective amount of an effective amount of a diterpene compound of the following formula: wherein R1, R2, R3, R4, and R5 are defined herein.

摘要翻译： 本发明涉及通过向有需要的受试者施用有效量的有效量的下式的双萜化合物来治疗胃腺癌或肺癌的方法：其中R 1，R 2， 本文定义了R 2，R 3，R 4和R 5。

公开(公告)号：US20050288378A1

公开(公告)日：2005-12-29

申请号：US11156210

申请日：2005-06-17

申请人： Xiaoqiang Yan ,  Yumin Cui ,  Weihan Zhang ,  Jian Zuo

发明人： Xiaoqiang Yan ,  Yumin Cui ,  Weihan Zhang ,  Jian Zuo

IPC分类号： A61K31/12

CPC分类号： A61K31/122 ,  A61K31/12 ,  A61K31/337 ,  A61K31/365 ,  A61K31/40 ,  A61K31/4745 ,  A61K31/475 ,  A61K33/24 ,  A61K2300/00

摘要： This invention relates to a method of treating cancer by administering to a subject in need thereof an effective amount of a cancer chemotherapeutic agent and an effective amount of a benzoquinone compound of the following formula: wherein R1, R2, R3, and R4 are defined herein.

摘要翻译： 本发明涉及通过向有需要的受试者施用有效量的癌症化学治疗剂和有效量的下式的苯醌化合物来治疗癌症的方法：其中R 1，R 2， 本文定义了R 2，R 3，R 4和R 4。