公开(公告)号：US20090283824A1

公开(公告)日：2009-11-19

申请号：US12258236

申请日：2008-10-24

申请人： Thomas J. Knight ,  Eric J. Stewart ,  Joseph T. Smith ,  Sean McLaughlin ,  Narsingh B. Singh

发明人： Thomas J. Knight ,  Eric J. Stewart ,  Joseph T. Smith ,  Sean McLaughlin ,  Narsingh B. Singh

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7391 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/32

摘要： In one embodiment, the disclosure relates to a low-power semiconductor switching device, having a substrate supporting thereon a semiconductor body; a source electrode coupled to the semiconductor body at a source interface region; a drain electrode coupled to the semiconductor body at a drain interface region; a gate oxide film formed over a region of the semiconductor body, the gate oxide film interfacing between a gate electrode and the semiconductor body; wherein at least one of the source interface region or the drain interface region defines a sharp junction into the semiconductor body.

摘要翻译： 在一个实施例中，本公开涉及一种低功率半导体开关器件，其具有在其上支撑半导体本体的衬底; 在源极接口区域耦合到半导体本体的源极; 漏极，其在漏极接口区域耦合到所述半导体本体; 形成在所述半导体主体的区域上的栅极氧化膜，所述栅极氧化膜在栅电极和所述半导体本体之间相互连接; 其中所述源极界面区域或所述漏极界面区域中的至少一个限定到所述半导体本体中的尖锐结。

公开(公告)号：US08278666B1

公开(公告)日：2012-10-02

申请号：US12821877

申请日：2010-06-23

申请人： Narsingh B. Singh ,  Sean R. McLaughlin ,  Thomas J. Knight ,  Robert M. Young ,  Brian P. Wagner ,  David A. Kahler ,  Andre E. Berghmans ,  David J. Knuteson ,  Ty R. McNutt ,  Jerry W. Hedrick, Jr. ,  George M. Bates ,  Kenneth Petrosky

发明人： Narsingh B. Singh ,  Sean R. McLaughlin ,  Thomas J. Knight ,  Robert M. Young ,  Brian P. Wagner ,  David A. Kahler ,  Andre E. Berghmans ,  David J. Knuteson ,  Ty R. McNutt ,  Jerry W. Hedrick, Jr. ,  George M. Bates ,  Kenneth Petrosky

IPC分类号： H01L29/15 ,  H01L31/0312

CPC分类号： H01L21/02381 ,  C30B23/02 ,  C30B25/02 ,  C30B25/183 ,  C30B29/36 ,  C30B29/403 ,  H01L21/02447 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262

摘要： The disclosure relates to a high purity 2H-SiC composition and methods for making same. The embodiments represented herein apply to both thin film and bulk growth of 2H-SiC. According to one embodiment, the disclosure relates to doping an underlying substrate or support layer with one or more surfactants to nucleate and grow high purity 2H-SiC. In another embodiment, the disclosure relates to a method for preparing 2H-SiC compositions by nucleating 2H-SiC on another SiC polytype using one or more surfactants. The surfactants can include AlN, Te, Sb and similar compositions. These nucleate SiC into disc form which changes to hexagonal 2H-SiC material.

摘要翻译： 本公开涉及高纯度2H-SiC组合物及其制备方法。 这里所示的实施方案适用于2H-SiC的薄膜和体积生长。 根据一个实施方案，本公开涉及用一种或多种表面活性剂掺杂下面的基底或支撑层以使高纯度2H-SiC成核和生长。 在另一个实施方案中，本公开内容涉及通过使用一种或多种表面活性剂在其它SiC多型体上成核2H-SiC制备2H-SiC组合物的方法。 表面活性剂可以包括AlN，Te，Sb和类似组合物。 这些将SiC成核转变成六角形2H-SiC材料的盘形。

公开(公告)号：US20090220801A1

公开(公告)日：2009-09-03

申请号：US12040785

申请日：2008-02-29

申请人： Brian Wagner ,  Travis J. Randall ,  Thomas J. Knight ,  David J. Knuteson ,  David Kahler ,  Andre E. Berghmans ,  Sean R. McLaughlin ,  Narsingh B. Singh ,  Mark Usefara

发明人： Brian Wagner ,  Travis J. Randall ,  Thomas J. Knight ,  David J. Knuteson ,  David Kahler ,  Andre E. Berghmans ,  Sean R. McLaughlin ,  Narsingh B. Singh ,  Mark Usefara

IPC分类号： C23C14/34 ,  B32B9/04

CPC分类号： C30B29/36 ,  C30B23/02

摘要： The disclosure relates to a method and apparatus for growth of high-purity 6H SiC single crystal using a sputtering technique. In one embodiment, the disclosure relates to a method for depositing a high purity 6H-SiC single crystal film on a substrate, the method including: providing a silicon substrate having an etched surface; placing the substrate and an SiC source in a deposition chamber; achieving a first vacuum level in the deposition chamber; pressurizing the chamber with a gas; depositing the SiC film directly on the etched silicon substrate from a sputtering source by: heating the substrate to a temperature below silicon melting point, using a low energy plasma in the deposition chamber; and depositing a layer of hexagonal SiC film on the etched surface of the substrate.

摘要翻译： 本公开涉及使用溅射技术生长高纯度6H SiC单晶的方法和装置。 在一个实施方案中，本公开涉及一种用于在基底上沉积高纯度6H-SiC单晶膜的方法，所述方法包括：提供具有蚀刻表面的硅衬底; 将衬底和SiC源放置在沉积室中; 在沉积室中达到第一真空度; 用气体对腔室加压; 通过以下方式将SiC膜直接沉积在蚀刻的硅衬底上：使用沉积室中的低能量等离子体将衬底加热到​​低于硅熔点的温度; 以及在衬底的蚀刻表面上沉积一层六方形的SiC膜。

公开(公告)号：US5788765A

公开(公告)日：1998-08-04

申请号：US709398

申请日：1996-08-30

申请人： Narsingh B. Singh ,  William D. Partlow ,  Steven Strauch ,  Albert M. Stewart ,  John F. Jackovitz ,  David W. Coffey

发明人： Narsingh B. Singh ,  William D. Partlow ,  Steven Strauch ,  Albert M. Stewart ,  John F. Jackovitz ,  David W. Coffey

IPC分类号： C30B7/00 ,  C30B7/08

CPC分类号： C30B7/00 ,  C30B29/10

摘要： Crystals formed of a solid-solution of K.sub.2 Ni(SO.sub.4).sub.2 6H.sub.2 O provide very good materials for filtering ultraviolet light and will not deteriorate in temperatures as high as 110.degree. C. They are particularly useful in sensing devices which seek to identify the presence of ultraviolet light in the UV missile warning band.

摘要翻译： 由K2Ni（SO4）26H2O的固溶体形成的晶体提供了非常好的过滤紫外线的材料，并且不会在高达110℃的温度下劣化。它们特别适用于寻求识别紫外线的存在的设备 在紫外线导弹警告带。

公开(公告)号：US5504615A

公开(公告)日：1996-04-02

申请号：US165291

申请日：1993-12-13

申请人： Narsingh B. Singh ,  Milton S. Gottlieb ,  James P. McHugh ,  Robert Mazelsky

发明人： Narsingh B. Singh ,  Milton S. Gottlieb ,  James P. McHugh ,  Robert Mazelsky

IPC分类号： G02F1/00 ,  G02F1/33 ,  G02F1/11

CPC分类号： G02F1/0018 ,  C01P2002/84 ,  G02F1/33

摘要： Acousto-optical devices utilize crystals of a novel material thallium arsenic sulfide (Tl.sub.3 AsS.sub.3) grown from a melt. A Tl.sub.3 AsS.sub.3 crystal is cut and parallel faces are prepared and polished. A piezoelectric transducer connected to an RF generator is placed on the acoustic face to generate sound waves. The light is directed through the optical face of the crystal and interacts with the acoustic waves. These devices may be used in signal processing, spectrum analyzing, spectroscopic, liquid analyzing and spectral imaging systems.

摘要翻译： 声光装置使用从熔体生长的新型材料铊硫化砷（Tl3AsS3）的晶体。 切割Tl3AsS3晶体并制备并平面。 连接到RF发生器的压电换能器放置在声表面上以产生声波。 光被引导通过晶体的光学面并与声波相互作用。 这些器件可用于信号处理，频谱分析，光谱，液体分析和光谱成像系统。

公开(公告)号：US09570646B2

公开(公告)日：2017-02-14

申请号：US14185567

申请日：2014-02-20

申请人： Narsingh B. Singh ,  John V. Veliadis ,  Bettina Nechay ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  Marc Sherwin

发明人： Narsingh B. Singh ,  John V. Veliadis ,  Bettina Nechay ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  Marc Sherwin

IPC分类号： H01L31/107 ,  H01L31/0336 ,  H01L31/0232 ,  H01L27/144 ,  H01L31/18

CPC分类号： H01L31/1075 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/02327 ,  H01L31/0336 ,  H01L31/035227 ,  H01L31/18

摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.

摘要翻译： 集成电路包括包括外延层的衬底材料，其中衬底材料和外延层形成具有第一导电类型的外延层的第一半导体材料。 包括不同于第一半导体材料的第一导电类型掺杂的具有第二导电类型的第二半导体材料的至少一个纳米线与第一半导体材料形成结交​​叉区域。 纳米线和第一半导体材料在结交叉区域形成雪崩光电二极管（APD），以实现单光子检测。 在替代配置中，APD形成为p-i-n交叉区域，其中n表示n型材料，i表示本征层，p表示p型材料。

公开(公告)号：US5563730A

公开(公告)日：1996-10-08

申请号：US264129

申请日：1994-06-21

申请人： Narsingh B. Singh ,  James P. McHugh ,  Emmanuel P. Supertzi ,  Tom Henningsen ,  Richard P. Storrick ,  Robert Mazelsky

发明人： Narsingh B. Singh ,  James P. McHugh ,  Emmanuel P. Supertzi ,  Tom Henningsen ,  Richard P. Storrick ,  Robert Mazelsky

IPC分类号： C01B19/00 ,  G02F1/00 ,  G02F1/33 ,  G02F1/355

CPC分类号： C01B19/002 ,  G02F1/0018 ,  G02F1/3551 ,  C01P2002/50 ,  C01P2002/84 ,  G02F1/33

摘要： Crystals formed of Tl.sub.3 AsS.sub.3 provide very good materials for the nonlinear optical conversion efficiency. The crystals are useful in nonlinear optical devices such as harmonic generators and optical parametric oscillators, and in linear applications such as acousto-optical devices. The method of preparing such crystals is also disclosed.

摘要翻译： 由Tl3AsS3形成的晶体为非线性光学转换效率提供了非常好的材料。 这些晶体在诸如谐波发生器和光学参量振荡器的非线性光学器件中以及诸如声光器件的线性应用中是有用的。 还公开了制备这种晶体的方法。

公开(公告)号：US10211359B2

公开(公告)日：2019-02-19

申请号：US15356152

申请日：2016-11-18

申请人： Narsingh B. Singh ,  John V. Veliadis ,  Bettina Nechay ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  Marc Sherwin

发明人： Narsingh B. Singh ,  John V. Veliadis ,  Bettina Nechay ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  Marc Sherwin

IPC分类号： H01L31/107 ,  H01L31/0336 ,  H01L31/0232 ,  H01L27/144 ,  H01L31/18 ,  H01L31/0352

摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.

公开(公告)号：US07683400B1

公开(公告)日：2010-03-23

申请号：US11474398

申请日：2006-06-26

申请人： Narsingh B. Singh ,  Brian P. Wagner ,  David J. Knuteson ,  Michael E. Aumer ,  Andre Berghmans ,  Darren Thomson ,  David Kahler

发明人： Narsingh B. Singh ,  Brian P. Wagner ,  David J. Knuteson ,  Michael E. Aumer ,  Andre Berghmans ,  Darren Thomson ,  David Kahler

IPC分类号： H01L29/08

CPC分类号： H01L29/1608 ,  H01L29/66068 ,  H01L29/66242 ,  H01L29/66431 ,  H01L29/737 ,  H01L29/7781 ,  H01L29/7786

摘要： A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).

公开(公告)号：US20080218940A1

公开(公告)日：2008-09-11

申请号：US11713783

申请日：2007-03-05

申请人： Narsingh B. Singh ,  John J. Talvacchio ,  Marc Sherwin ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  John D. Adam

发明人： Narsingh B. Singh ,  John J. Talvacchio ,  Marc Sherwin ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  John D. Adam

IPC分类号： H01G5/013 ,  C01F11/02 ,  C01F17/00 ,  C01G23/00 ,  C01G3/02 ,  H01G5/011

CPC分类号： C01G23/002 ,  C01P2002/34 ,  C01P2002/72 ,  C01P2006/40 ,  C04B35/462 ,  C04B2235/3208 ,  C04B2235/3227 ,  C04B2235/3281 ,  H01G4/105 ,  H01G4/1209 ,  H01G4/1218 ,  H01G4/306

摘要： Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu3Ti4O12 or La3Ga5SiO4. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.

摘要翻译： 公开了生产多晶和单晶电介质的方法，包括包含CaC 3 3 Ti 4 O 12或La 3 N 3的电介质 > 5 SiO 4。 通过原子晶格常数调整电介质及其生长衬底，制造出具有改善结晶度的高级单晶。 根据所公开的方法制备的电介质材料可用于制造储能装置，例如， 电容器