公开(公告)号：US07611926B2

公开(公告)日：2009-11-03

申请号：US12040775

申请日：2008-02-29

申请人： Naohide Takamoto ,  Sadahito Misumi ,  Takeshi Matsumura ,  Yasuhiro Amano ,  Masami Oikawa ,  Tsubasa Miki

发明人： Naohide Takamoto ,  Sadahito Misumi ,  Takeshi Matsumura ,  Yasuhiro Amano ,  Masami Oikawa ,  Tsubasa Miki

IPC分类号： H01L21/58 ,  H01L23/14

CPC分类号： H01L24/83 ,  H01L21/6836 ,  H01L23/3121 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2224/05599 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83855 ,  H01L2224/83885 ,  H01L2224/85001 ,  H01L2224/85099 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/0635 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012

摘要： The thermosetting die bonding film of the invention is a thermosetting die bonding film used to produce a semiconductor device, which contains, as main components, 5 to 15% by weight of a thermoplastic resin component and 45 to 55% by weight of a thermosetting resin component, and has a melt viscosity of 400 Pa·s or more and 2500 Pa·s or less at 100° C. before the film is thermally set.

摘要翻译： 本发明的热固性芯片接合薄膜是用于制造半导体器件的热固性芯片接合薄膜，其以主要成分为5〜15重量％的热塑性树脂成分和45〜55重量％的热硬化性树脂 并且在热固化膜之前，在100℃下具有400Pa.s以上且2500Pa·s以下的熔融粘度。

公开(公告)号：US20080213943A1

公开(公告)日：2008-09-04

申请号：US12040775

申请日：2008-02-29

申请人： Naohide Takamoto ,  Sadahito Misumi ,  Takeshi Matsumura ,  Yasuhiro Amano ,  Masami Oikawa ,  Tsubasa Miki

发明人： Naohide Takamoto ,  Sadahito Misumi ,  Takeshi Matsumura ,  Yasuhiro Amano ,  Masami Oikawa ,  Tsubasa Miki

IPC分类号： H01L21/58 ,  H01B1/12

CPC分类号： H01L24/83 ,  H01L21/6836 ,  H01L23/3121 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2224/05599 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83855 ,  H01L2224/83885 ,  H01L2224/85001 ,  H01L2224/85099 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/0635 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012

摘要： The thermosetting die bonding film of the invention is a thermosetting die bonding film used to produce a semiconductor device, which contains, as main components, 5 to 15% by weight of a thermoplastic resin component and 45 to 55% by weight of a thermosetting resin component, and has a melt viscosity of 400 Pa·s or more and 2500 Pa·s or less at 100° C. before the film is thermally set.

摘要翻译： 本发明的热固性芯片接合薄膜是用于制造半导体器件的热固性芯片接合薄膜，其以主要成分为5〜15重量％的热塑性树脂成分和45〜55重量％的热硬化性树脂 并且在热固化膜之前，在100℃下具有400Pa.s以上且2500Pa·s以下的熔融粘度。

公开(公告)号：US20100219507A1

公开(公告)日：2010-09-02

申请号：US12279633

申请日：2007-02-15

申请人： Sadahito Misumi ,  Takeshi Matsumura ,  Naohide Takamoto ,  Tsubasa Miki

发明人： Sadahito Misumi ,  Takeshi Matsumura ,  Naohide Takamoto ,  Tsubasa Miki

IPC分类号： H01L23/00 ,  B32B7/12 ,  H01L21/78

CPC分类号： H01L24/29 ,  C09J7/28 ,  C09J7/38 ,  C09J2201/128 ,  C09J2201/36 ,  C09J2203/326 ,  H01L24/27 ,  H01L24/32 ,  H01L24/45 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/3011 ,  Y10T428/28 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01026 ,  H01L2924/00 ,  H01L2924/3512

摘要： According to the invention, a process for producing a semiconductor device using an adhesive sheet for a spacer, comprising preparing an adhesive sheet having a spacer layer provided with an adhesive layer on at least one surface thereof as the adhesive sheet for a spacer, a step of sticking the adhesive sheet for a spacer onto a dicing sheet with the adhesive layer as a sticking surface, a step of dicing the adhesive sheet for a spacer to form a chip-shaped spacer provided with the adhesive layer, a step of peeling the spacer from the dicing sheet together with the adhesive layer, and a step of fixing the spacer onto an adherend with the adhesive layer interposed therebetween.

摘要翻译： 根据本发明，一种使用间隔物用粘合片的半导体器件的制造方法，其特征在于，在其至少一个面上制备具有间隔层的粘合片作为间隔物的粘合片， 将用于间隔物的粘合剂片粘附到具有粘合剂层作为粘着表面的切割片上，切割用于间隔物的粘合片以形成设置有粘合剂层的芯片形间隔物的步骤，剥离间隔物的步骤 从切割片与粘合剂层一起，以及将间隔物固定在粘合剂层上的粘合剂层之间的步骤。

公开(公告)号：USD589473S1

公开(公告)日：2009-03-31

申请号：US29293537

申请日：2007-11-30

申请人： Naohide Takamoto ,  Sadahito Misumi ,  Takeshi Matsumura ,  Yasuhiro Amano

设计人： Naohide Takamoto ,  Sadahito Misumi ,  Takeshi Matsumura ,  Yasuhiro Amano

公开(公告)号：US20100236689A1

公开(公告)日：2010-09-23

申请号：US12675433

申请日：2008-08-26

申请人： Yasuhiro Amano ,  Sadahito Misumi ,  Takeshi Matsumura ,  Naohide Takamoto

发明人： Yasuhiro Amano ,  Sadahito Misumi ,  Takeshi Matsumura ,  Naohide Takamoto

IPC分类号： C09J7/00 ,  B32B37/12

CPC分类号： C09J133/08 ,  C09J7/35 ,  C09J7/385 ,  C09J11/04 ,  H01L23/24 ,  H01L23/3121 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T156/10 ,  Y10T428/249921 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/3512

摘要： The present invention provides an adhesive sheet for manufacturing a semiconductor device, which, even when the adhesive sheet is made thin, makes it possible to easily identify the presence or absence of the adhesive sheet, thereby decreasing down time for the manufacturing apparatus and enabling an improvement of the yield, and to provide a semiconductor device manufacturing method using the sheet. The present invention relates to an adhesive sheet for manufacturing a semiconductor device which is used to adhere a semiconductor element to an adherend, wherein the adhesive sheet contains a pigment which adsorbs or reflects light having a wavelength in a range from 290 to 450 nm.

摘要翻译： 本发明提供一种用于制造半导体器件的粘合片，即使当粘合片变薄时，也可以容易地识别粘合片的存在或不存在，从而减少制造装置的停留时间并使得能够 提高产量，并提供使用该片材的半导体器件制造方法。 本发明涉及一种用于制造用于将半导体元件粘合到被粘物上的半导体器件的粘合片，其中该粘合片含有吸收或反射波长在290至450nm范围内的光的颜料。

公开(公告)号：US08703584B2

公开(公告)日：2014-04-22

申请号：US12789878

申请日：2010-05-28

申请人： Sadahito Misumi ,  Naohide Takamoto

发明人： Sadahito Misumi ,  Naohide Takamoto

IPC分类号： H01L21/00

CPC分类号： H01L21/67132 ,  H01L2224/16225 ,  H01L2924/00011 ,  H01L2924/00014 ,  Y10T428/2848 ,  H01L2224/0401

摘要： The present invention provides a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material; and a film for flip chip type semiconductor back surface provided on the pressure-sensitive adhesive layer, in which the film for flip chip type semiconductor back surface has a multilayered structure including a wafer adhesion layer and a laser mark layer, the wafer adhesion layer is formed of a resin composition containing a thermosetting resin component and, as an optional component, a thermoplastic resin component in an amount of less than 30% by weight relative to the whole amount of resin components, and the laser mark layer is formed of a resin composition containing a thermoplastic resin component in an amount of 30% by weight or more relative to the whole amount of resin components and, as an optional component, a thermosetting resin component.

摘要翻译： 本发明提供一种半导体背面用切割带一体膜，其特征在于，包括：基材的切割带和设置在基材上的粘合剂层; 以及设置在压敏粘合剂层上的倒装芯片型半导体背表面的薄膜，其中倒装芯片型半导体背表面膜具有包括晶片粘合层和激光标记层的多层结构，晶片粘附层为 由含有热固性树脂组分的树脂组合物和相对于树脂组分的总量小于30重量％的热塑性树脂组分作为任选组分形成，激光标记层由树脂形成 含有相对于树脂成分的总量为30重量％以上的热塑性树脂成分的组合物，作为任意成分的热硬化性树脂成分。

公开(公告)号：US20100047968A1

公开(公告)日：2010-02-25

申请号：US12519510

申请日：2007-12-13

申请人： Yasuhiro Amano ,  Yoshio Terada ,  Naohide Takamoto

发明人： Yasuhiro Amano ,  Yoshio Terada ,  Naohide Takamoto

IPC分类号： H01L21/78 ,  C08K3/36 ,  B32B5/16

CPC分类号： C09J133/04 ,  B32B7/12 ,  B32B27/08 ,  B32B27/18 ,  B32B27/281 ,  B32B27/308 ,  B32B27/32 ,  B32B27/36 ,  B32B27/365 ,  B32B27/38 ,  B32B27/42 ,  B32B2262/101 ,  B32B2264/107 ,  B32B2270/00 ,  B32B2307/202 ,  B32B2307/306 ,  B32B2307/54 ,  B32B2457/00 ,  C08F220/18 ,  C08K3/346 ,  C08K9/04 ,  C08L33/06 ,  C08L33/08 ,  C08L51/003 ,  C08L61/00 ,  C08L63/00 ,  C08L2666/02 ,  C08L2666/14 ,  C08L2666/16 ,  C08L2666/22 ,  C09J11/04 ,  C09J133/08 ,  C09J151/003 ,  C09J163/00 ,  C09J2203/326 ,  H01L21/6836 ,  H01L23/24 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83885 ,  H01L2224/85001 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85951 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2225/06575 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01073 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/20305 ,  H01L2924/20752 ,  H01L2924/3011 ,  Y10T428/259 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/2075

摘要： The present invention relates to an adhesive sheet for producing a semiconductor device, which is used when a semiconductor element is caused to adhere onto an adherend and the semiconductor element is wire-bonded, in which a lipophilic lamellar clay mineral is contained.

摘要翻译： 本发明涉及一种用于制造半导体器件的粘合片，当将半导体元件粘附到被粘物上并且半导体元件被引线接合时使用，其中包含亲油性层状粘土矿物。

公开(公告)号：US08698324B2

公开(公告)日：2014-04-15

申请号：US12975641

申请日：2010-12-22

申请人： Naohide Takamoto ,  Takeshi Matsumura ,  Goji Shiga

发明人： Naohide Takamoto ,  Takeshi Matsumura ,  Goji Shiga

IPC分类号： H01L23/48 ,  H01L21/50

摘要： The present invention provides a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material; and a film for flip chip type semiconductor back surface provided on the pressure-sensitive adhesive layer, in which the film for flip chip type semiconductor back surface contains a black pigment.

公开(公告)号：US08518745B2

公开(公告)日：2013-08-27

申请号：US13396554

申请日：2012-02-14

申请人： Takashi Oda ,  Naohide Takamoto ,  Takeshi Matsumura

发明人： Takashi Oda ,  Naohide Takamoto ,  Takeshi Matsumura

IPC分类号： H01L21/00

CPC分类号： H01L23/293 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/3157 ,  H01L24/10 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2221/68377 ,  H01L2224/10126 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81191 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15787 ,  H01L2924/351 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device is provided. The method includes the steps of pasting a film for forming a protective layer in which a support base, an adhesive layer, and a thermosetting resin layer are laminated, in that order, onto a bumped wafer in which a low dielectric material layer is formed, with the thermosetting resin layer serving as a pasting surface, and further, peeling the support base and the adhesive layer from the thermosetting resin layer, forming a protective layer by thermally curing the thermosetting resin layer, and dicing the bumped wafer and the protective layer together.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括以下步骤：将形成保护层的膜，其中将支撑基底，粘合剂层和热固性树脂层按顺序粘合到形成有低介电材料层的凸起的晶片上， 将热固性树脂层用作糊状表面，并且进一步从热固性树脂层剥离支撑基底和粘合剂层，通过热固化热固性树脂层形成保护层，并将凸起的晶片和保护层一起切割 。

公开(公告)号：US08704382B2

公开(公告)日：2014-04-22

申请号：US12975893

申请日：2010-12-22

申请人： Naohide Takamoto ,  Takeshi Matsumura ,  Goji Shiga

发明人： Naohide Takamoto ,  Takeshi Matsumura ,  Goji Shiga

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L21/6836 ,  H01L21/561 ,  H01L23/3164 ,  H01L23/544 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2224/8101 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/814 ,  H01L2224/831 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/3025 ,  Y10T428/28 ,  H01L2924/014 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention provides a film for flip chip type semiconductor back surface, which is to be formed on a back surface of a semiconductor element flip-chip connected on an adherend, the film including a wafer adhesion layer and a laser marking layer, in which the wafer adhesion layer has a light transmittance of 40% or more in terms of a light having a wavelength of 532 nm and the laser marking layer has a light transmittance of less than 40% in terms of a light having a wavelength of 532 nm.

摘要翻译： 本发明提供了一种用于倒装芯片型半导体背表面的薄膜，其将形成在连接在被粘物上的半导体元件倒装芯片的背面上，该薄膜包括晶片粘合层和激光标记层，其中 晶片粘合层的波长为532nm的光的透光率为40％以上，激光标记层的波长为532nm的光的透光率为40％以下。