公开(公告)号：US20140367719A1

公开(公告)日：2014-12-18

申请号：US14241564

申请日：2012-09-11

申请人： Ajaykumar R. Jain

发明人： Ajaykumar R. Jain

IPC分类号： H01L33/50

CPC分类号： H01L33/502 ,  C09K11/88 ,  H01L2924/0002 ,  H01L2933/0041 ,  H05B33/10 ,  H05B33/14 ,  H01L2924/00

摘要： Phosphors fabricated from one or more layers of a naturally lamellar or fabricated lamellar semiconductor that is combined with a substrate. One or more of the layers of the lamellar semiconductor are separated from bulk material. The one or more layers are transformed into a phosphor for use with one or more light-emitting devices for the purpose of modifying the light emitted by the light-emitting device(s). Such transformation can be effected in a variety of ways, such as precise thinning or thickening of the removed layer(s) and/or intercalating one or more species of ions into the layer(s) that function as phosphors.

摘要翻译： 由与衬底组合的一层或多层天然层状或制造层状半导体制成的荧光体。 层状半导体的一个或多个层与大块材料分离。 一个或多个层被转换成用于一个或多个发光器件的磷光体，用于改变由发光器件发射的光。 这种转化可以以各种方式进行，例如去除的层的精确稀释或增稠和/或将一种或多种离子插入到用作磷光体的层中。

公开(公告)号：US08859310B2

公开(公告)日：2014-10-14

申请号：US13704088

申请日：2011-06-10

申请人： Ajaykumar R. Jain

发明人： Ajaykumar R. Jain

IPC分类号： H01L21/00 ,  H01L31/18 ,  H01L21/02 ,  H01L31/0384 ,  H01L33/52 ,  H01L31/0392 ,  H01L31/0352 ,  B82Y20/00 ,  H01L31/0203 ,  H01L31/072 ,  H01L33/00 ,  H01L33/18 ,  H01L33/32

CPC分类号： H01L33/52 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02601 ,  H01L21/02664 ,  H01L31/0203 ,  H01L31/035236 ,  H01L31/0384 ,  H01L31/0392 ,  H01L31/072 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1872 ,  H01L31/1892 ,  H01L31/1896 ,  H01L33/0066 ,  H01L33/18 ,  H01L33/32 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating optoelectronic devices, such as photovoltaic cells and light-emitting devices. In one embodiment, such a method includes providing a substrate, applying a monolayer of semiconductor particles to the substrate, and encasing the monolayer with one or more coatings so as to form an encased-particle layer. At some point during the method, the substrate is removed so as to expose the reverse side of the encased-particle layer and further processing is performed on the reverse side. When a device made using such a method has been completed and installed into an electrical circuit the semiconductor particles actively participate in the photoelectric effect or generation of light, depending on the type of device.

摘要翻译： 制造光电器件如光伏电池和发光器件的方法。 在一个实施例中，这种方法包括提供衬底，向衬底施加单层半导体颗粒，以及用一个或多个涂层包围单层以形成包封颗粒层。 在该方法中的某个时刻，去除衬底以暴露包裹颗粒层的反面，并在反面进行进一步的处理。 当使用这种方法制造的装置已经完成并安装到电路中时，根据装置的类型，半导体颗粒主动参与光电效应或光的产生。

公开(公告)号：US20130056712A1

公开(公告)日：2013-03-07

申请号：US13510427

申请日：2010-12-01

申请人： Ajaykumar R. Jain

发明人： Ajaykumar R. Jain

IPC分类号： H01L29/04 ,  H01L31/0264 ,  H01L51/44 ,  H01L31/18 ,  H01L33/02 ,  H01L21/02 ,  H01L51/50 ,  H01L51/48

CPC分类号： H01L31/02167 ,  H01L31/06 ,  H01L51/42 ,  Y02E10/549 ,  Y10T307/707

摘要： Devices that include one or more functional semiconductor elements that are immersed in static electric fields (E-fields). In one embodiment, one or more electrets are placed proximate the one or more organic, inorganic, or hybrid semiconductor elements so that the static charge(s) of the electret(s) participate in creating the static E-field(s) that influences the semiconductor element(s). An externally applied electric field can be used, for example, to enhance charge-carrier mobility in the semiconductor element and/or to vary the width of the depletion region in the semiconductor material.

摘要翻译： 包括浸没在静电场（E场）中的一个或多个功能半导体元件的装置。 在一个实施例中，一个或多个驻极体靠近一个或多个有机，无机或混合半导体元件放置，使得驻极体的静电荷参与产生影响的静态电场 半导体元件。 例如，可以使用外部施加的电场来增强半导体元件中的电荷载流子迁移率和/或改变半导体材料中的耗尽区域的宽度。

公开(公告)号：US07259106B2

公开(公告)日：2007-08-21

申请号：US11223515

申请日：2005-09-09

申请人： Ajaykumar R. Jain

发明人： Ajaykumar R. Jain

IPC分类号： H01L21/027

CPC分类号： H01L21/6835 ,  G02F1/133305 ,  G02F1/1362 ,  G02F1/167 ,  G02F2001/13613 ,  G02F2001/136231 ,  H01L2221/6835 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3025

摘要： A circuitry sheet (322) comprising an electronic device layer stack (304) containing electronic devices, e.g., thin-film transistors, or portions thereof, formed by removing material from both sides of the device layer stack. The circuitry sheet may be made by an electronic/optoelectronic device manufacturing method (200) that includes the steps of forming the device layer stack on a temporary substrate (300), removing material from both sides of the device layer stack, and then attaching a permanent substrate (348) to the device layer stack. The method uses one or more resist layers (600) that may be activated simultaneously and independently to impart distinct circuit pattern images (603, 608, 612) into each of a plurality of image levels (612, 616, 620) within each resist layer, thereby obviating repetitive sequential exposure, registration and alignment steps.

摘要翻译： 电路板（322）包括电子器件层堆叠（304），该电子器件层堆叠（304）包含通过从器件层堆叠的两侧去除材料形成的电子器件，例如薄膜晶体管或其部分。 电路板可以通过电子/光电子器件制造方法（200）制成，其包括在临时衬底（300）上形成器件层堆叠，从器件层堆叠的两侧去除材料，然后连接 永久性基板（348）到器件层堆叠。 该方法使用可以同时且独立地激活的一个或多个抗蚀剂层（600），以将不同的电路图案图像（603,608,612）赋予每个抗蚀剂层内的多个图像级（612,616,620）中的每一个 ，从而避免重复的顺序曝光，配准和对准步骤。

公开(公告)号：US09019595B2

公开(公告)日：2015-04-28

申请号：US14114318

申请日：2012-03-26

申请人： Ajaykumar R. Jain

发明人： Ajaykumar R. Jain

IPC分类号： H01S5/30 ,  H01S5/10 ,  H01S5/00 ,  H01S3/00 ,  H01S3/082 ,  H01L33/50 ,  B82Y20/00

CPC分类号： G02B5/20 ,  B82Y20/00 ,  G02B5/207 ,  H01L31/02327 ,  H01L31/162 ,  H01L33/502 ,  H01S3/0092 ,  H01S3/082 ,  H01S5/005 ,  H01S5/10 ,  H01S5/1092 ,  H01S5/1096 ,  Y10S977/755 ,  Y10S977/774

摘要： Optical resonators that are enhanced with photoluminescent phosphors and are designed and configured to output light at one or more wavelengths based on input/pump light, and systems and devices made with such resonators. In some embodiments, the resonators contain multiple optical resonator cavities in combination with one or more photoluminescent phosphor layers or other structures. In other embodiments, the resonators are designed to simultaneously resonate at the input/pump and output wavelengths. The photoluminescent phosphors can be any suitable photoluminescent material, including semiconductor and other materials in quantum-confining structures, such as quantum wells and quantum dots, among others.

摘要翻译： 用光致发光荧光体增强的光学谐振器，并且被设计和配置为基于输入/泵浦光输出一个或多个波长的光，以及用这种谐振器制造的系统和器件。 在一些实施例中，谐振器包含与一个或多个光致发光荧光体层或其它结构组合的多个光学谐振腔。 在其它实施例中，谐振器被设计成在输入/泵和输出波长下同时谐振。 光致发光荧光体可以是任何合适的光致发光材料，包括量子限制结构中的半导体和其它材料，例如量子阱和量子点等。

公开(公告)号：US20130143336A1

公开(公告)日：2013-06-06

申请号：US13816798

申请日：2011-03-21

申请人： Ajaykumar R. Jain

发明人： Ajaykumar R. Jain

IPC分类号： H01L33/00 ,  H01L33/06

CPC分类号： H01L51/502 ,  H01L21/02521 ,  H01L21/02568 ,  H01L33/0041 ,  H01L33/005 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/08 ,  H01L51/5036 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of making optoelectronic devices containing functional elements made from layers liberated from natural and/or fabricated lamellar semiconductor donors. In one embodiment, a donor is provided, a layer is detached from the donor, and the layer is incorporated into an optoelectronic device as a functional element thereof. The thickness of the detached layer is tuned as needed to suit the functionality of the functional element. Examples of functional elements that can be made using detached layers include p-n junctions, Schotkey junctions, PIN junctions, and confinement layers, among others. Examples of optoelectronic devices that can incorporate detached layers include LEDs, laser diodes, MOSFET transistors, and MISFET transistors, among others.

摘要翻译： 制造含有由从天然和/或制造的层状半导体供体释放的层制成的功能元件的光电子器件的方法。 在一个实施方案中，提供供体，将一层与供体分离，并将该层作为其功能元件结合到光电子器件中。 根据需要调整分离层的厚度以适应功能元件的功能。 可以使用分离层制成的功能元件的实例包括p-n结，Schotkey结，PIN结和限制层等。 可并入分离层的光电器件的实例包括LED，激光二极管，MOSFET晶体管和MISFET晶体管等。

公开(公告)号：US20130092975A1

公开(公告)日：2013-04-18

申请号：US13704088

申请日：2011-06-10

申请人： Ajaykumar R. Jain

发明人： Ajaykumar R. Jain

IPC分类号： H01L33/52 ,  H01L31/0203 ,  H01L31/18

CPC分类号： H01L33/52 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02601 ,  H01L21/02664 ,  H01L31/0203 ,  H01L31/035236 ,  H01L31/0384 ,  H01L31/0392 ,  H01L31/072 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1872 ,  H01L31/1892 ,  H01L31/1896 ,  H01L33/0066 ,  H01L33/18 ,  H01L33/32 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating optoelectronic devices, such as photovoltaic cells and light-emitting devices. In one embodiment, such a method includes providing a substrate, applying a monolayer of semiconductor particles to the substrate, and encasing the monolayer with one or more coatings so as to form an encased-particle layer. At some point during the method, the substrate is removed so as to expose the reverse side of the encased-particle layer and further processing is performed on the reverse side. When a device made using such a method has been completed and installed into an electrical circuit the semiconductor particles actively participate in the photoelectric effect or generation of light, depending on the type of device.

摘要翻译： 制造光电器件如光伏电池和发光器件的方法。 在一个实施例中，这种方法包括提供衬底，向衬底施加单层半导体颗粒，以及用一个或多个涂层包围单层以便形成包封颗粒层。 在该方法中的某个时刻，去除衬底以暴露包裹颗粒层的反面，并在反面进行进一步的处理。 当使用这种方法制造的装置已经完成并安装到电路中时，根据装置的类型，半导体颗粒主动参与光电效应或光的产生。

公开(公告)号：US09006931B2

公开(公告)日：2015-04-14

申请号：US13510427

申请日：2010-12-01

申请人： Ajaykumar R. Jain

发明人： Ajaykumar R. Jain

IPC分类号： C23C16/44 ,  H01L31/0216 ,  H01L31/06 ,  H01L51/42

CPC分类号： H01L31/02167 ,  H01L31/06 ,  H01L51/42 ,  Y02E10/549 ,  Y10T307/707

摘要： Devices that include one or more functional semiconductor elements that are immersed in static electric fields (E-fields). In one embodiment, one or more electrets are placed proximate the one or more organic, inorganic, or hybrid semiconductor elements so that the static charge(s) of the electret(s) participate in creating the static E-field(s) that influences the semiconductor element(s). An externally applied electric field can be used, for example, to enhance charge-carrier mobility in the semiconductor element and/or to vary the width of the depletion region in the semiconductor material.

摘要翻译： 包括浸没在静电场（E场）中的一个或多个功能半导体元件的装置。 在一个实施例中，一个或多个驻极体靠近一个或多个有机，无机或混合半导体元件放置，使得驻极体的静电荷参与产生影响的静态电场 半导体元件。 例如，可以使用外部施加的电场来增强半导体元件中的电荷载流子迁移率和/或改变半导体材料中的耗尽区域的宽度。

公开(公告)号：US08859412B2

公开(公告)日：2014-10-14

申请号：US14007168

申请日：2012-02-09

申请人： Ajaykumar R. Jain

发明人： Ajaykumar R. Jain

IPC分类号： H01L21/28 ,  H01L33/00 ,  H01S5/02 ,  H01S5/347 ,  H01L21/02 ,  H01L33/26 ,  H01S5/183 ,  H01S5/327 ,  H01S5/042

CPC分类号： H01S5/347 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/024 ,  H01L21/02417 ,  H01L21/02521 ,  H01L21/02551 ,  H01L21/02557 ,  H01L21/02568 ,  H01L31/02325 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/0324 ,  H01L31/035236 ,  H01L31/036 ,  H01L33/005 ,  H01L33/0079 ,  H01L33/0083 ,  H01L33/0087 ,  H01L33/06 ,  H01L33/18 ,  H01L33/26 ,  H01L33/28 ,  H01L33/32 ,  H01L33/46 ,  H01S5/0206 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/125 ,  H01S5/183 ,  H01S5/187 ,  H01S5/3202 ,  H01S5/327

摘要： Optoelectronic devices, such as light-emitting diodes, laser diodes, image sensors, optical detectors, etc., made by depositing (growing) one or more epitaxial semiconductor layers on a monocrystalline lamellar/layered substrate so that each layer has a wurtzite crystal structure. In some embodiments, the layers are deposited and then one or more lamellas of the starting substrate are removed from the rest of the substrate. In one subset of such embodiments, the removed lamella(s) is/are partially or entirely removed. In other embodiments, one or more lamellas of the starting substrate are removed prior to depositing the one or more wurtzite-crystal-structure-containing layer(s).

摘要翻译： 通过在单晶层状/层状衬底上沉积（生长）一个或多个外延半导体层而制成的光电器件，例如发光二极管，激光二极管，图像传感器，光学检测器等，使得每个层具有纤锌矿晶体结构 。 在一些实施例中，沉积这些层，然后将起始衬底的一个或多个层从衬底的其余部分移除。 在这种实施例的一个子集中，所移除的薄片被部分地或完全地去除。 在其它实施方案中，在沉积一种或多种含纤锌矿结晶结构的层之前，除去起始衬底的一个或多个薄片。

公开(公告)号：US07871912B2

公开(公告)日：2011-01-18

申请号：US11610195

申请日：2006-12-13

申请人： Ajaykumar R. Jain

发明人： Ajaykumar R. Jain

IPC分类号： H01L21/44

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/66795 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0558 ,  H01L51/057 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/765 ,  Y10T428/26

摘要： Various methods for forming active electronic devices, such as field-effect transistors, and devices made using these methods are disclosed. Some of the methods include growing freestanding nano-, micro- and milli-scale semiconducting structures that are used for the active semiconducting channels of the active electronic devices. Others of the methods include forming strands of active electronic devices along a wire. Yet others of the methods utilize both of these concepts so that the active electronic devices on a particular strand include freestanding semiconducting structures.

摘要翻译： 公开了用于形成诸如场效应晶体管的有源电子器件的各种方法以及使用这些方法制造的器件。 一些方法包括增加用于有源电子器件的有源半导体通道的独立的纳米级，微米级和毫米级半导体结构。 其他方法包括沿着线形成有源电子器件的线。 另一些方法利用这两个概念，使得特定线上的有源电子器件包括独立的半导体结构。