Hydrophobic metal oxide powder and application thereof
    1.
    发明授权
    Hydrophobic metal oxide powder and application thereof 有权
    疏水性金属氧化物粉末及其应用

    公开(公告)号:US06265126B1

    公开(公告)日:2001-07-24

    申请号:US09447830

    申请日:1999-11-23

    IPC分类号: G03G9097

    摘要: A hydrophobic metal oxide powder obtained by simultaneously surface-treating a powder of a metal oxide (for example, silica, titania, alumina, or the like) with silicone oil having epoxy groups and a non-polymeric amine compound having a lower number of primary and/or secondary amino groups than the number required for reaction with all epoxy groups, or surface-treating the powder with silicon oil having epoxy groups and amino groups and previously obtained by reaction. Straight silicone oil may be further used for surface treatment. Frictional charge which is controlled within a wide range of from negative charge to positive charge, high hydrophobicity and fluidity can be imparted to the powder by using a relatively small amount of coating, and a hydrophobic metal oxide powder useful as an additive for an electrophotographic developer can be obtained.

    摘要翻译: 通过用具有环氧基的硅油同时表面处理金属氧化物粉末(例如二氧化硅,二氧化钛,氧化铝等)而获得的疏水性金属氧化物粉末和具有较低数量的主要原料的非聚合胺化合物 和/或仲氨基,而不是与所有环氧基反应所需的数目,或用具有环氧基和氨基的硅油表面处理并预先通过反应获得的仲氨基。 直接硅油可进一步用于表面处理。 通过使用相对少量的涂层,可以将粉末中的从负电荷到正电荷,高疏水性和流动性的宽范围内控制的摩擦电荷和用作电子照相显影剂的添加剂的疏水性金属氧化物粉末 可以获得。

    Protective thin film for FPDS, method for producing said thin film and FPDS using said thin film
    2.
    发明授权
    Protective thin film for FPDS, method for producing said thin film and FPDS using said thin film 失效
    用于FPDS的保护性薄膜,使用所述薄膜制造所述薄膜和FPDS的方法

    公开(公告)号:US06821616B1

    公开(公告)日:2004-11-23

    申请号:US09457743

    申请日:1999-12-10

    IPC分类号: B32B904

    摘要: The present invention provides a protecting film capable of preventing deterioration in adhesion and matching to a substrate (dielectric layer), and deterioration in electric insulation. The protecting film includes a film body composed of MgO or the like which is inhibited from reacting with CO2 gas and H2O gas in air to prevent degeneration of MgO or the like into MgCO3 and Mg(OH)2, etc. harmful to FPD. The film body is formed on the surface of the substrate, and the fluoride layer is formed on the surface of the film body. The fluoride layer is represented by MOXFY (M is Mg, Ca, Sr, Ba, an alkali earth complex metal, a rare earth metal, or a complex metal of an alkali earth metal and a rare earth metal, 0≦X

    摘要翻译: 本发明提供能够防止粘合性劣化和与基板(电介质层)匹配的保护膜以及电绝缘性的劣化。 保护膜包括由MgO等构成的膜体,其被抑制与空气中的CO 2气体和H 2 O气体反应,以防止MgO等变为对FPD有害的MgCO 3和Mg(OH)2等。 在基材的表面上形成膜体,并且在膜体的表面上形成氟化物层。 氟化物层由MOXFY(M是Mg,Ca,Sr,Ba,碱土金属络合物,稀土金属或碱土金属和稀土金属的复合金属,0 <= X 2 ,0

    Printing press
    4.
    发明授权
    Printing press 有权
    印刷机

    公开(公告)号:US08696108B2

    公开(公告)日:2014-04-15

    申请号:US13322230

    申请日:2010-05-21

    IPC分类号: B41J2/01

    摘要: In a printing press, it is configured such that a newspaper web offset printing press is composed by a feeder device, a printing device, a guiding device, a turn bar device, and a folding unit; as a guiding device, there are provided an upstream side guide roller and a downstream side guide roller which are disposed with a predetermined interval along a transportation direction of a web for guiding transportation of the web; and there is disposed an ink-jet printer for performing digital printing on the web guided between the guide rollers. By setting diameters of the upstream side guide roller and the downstream side guide roller to different values, vibration of the print medium which is transported while being guided by the guide rollers is suppressed, and the print quality is thereby improved.

    摘要翻译: 在印刷机中,由纸送纸装置,印刷装置,引导装置,转杆装置和折叠单元构成报纸卷筒纸胶版印刷机。 作为引导装置,设置有沿着幅材的传送方向以预定间隔布置的上游侧引导辊和下游侧引导辊,用于引导幅材的传送; 并且设置有用于在引导辊之间引导的幅材上进行数字印刷的喷墨打印机。 通过将上游侧引导辊和下游侧引导辊的直径设定为不同的值,可以抑制在被引导辊引导的同时传送的打印介质的振动,从而提高打印质量。

    METHOD FOR PRODUCING FERROELECTRIC THIN FILM
    5.
    发明申请
    METHOD FOR PRODUCING FERROELECTRIC THIN FILM 有权
    生产薄膜薄膜的方法

    公开(公告)号:US20120295099A1

    公开(公告)日:2012-11-22

    申请号:US13471796

    申请日:2012-05-15

    IPC分类号: B05D5/12 B32B5/00

    摘要: A method for producing a ferroelectric thin film comprising: coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal faces oriented in the (111) direction, calcining the coated composition, and subsequently performing firing the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes formation of a orientation controlling layer b coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 35 nm to 150 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer in the (100) plane.

    摘要翻译: 一种铁电薄膜的制造方法,其特征在于,在具有基板主体的基板的基极上涂布形成铁电薄膜的组合物和在(111)方向上取向晶面的基极,煅烧所述涂布组合物 ,然后进行焙烧,使涂布组合物结晶,使基极上形成强电介质薄膜,其特征在于:在基极上形成涂布组合物的取向控制层b,煅烧涂布组合物, 对涂覆在基极上的组合物的量进行控制,使得结晶后的取向控制层的厚度在35nm〜150nm的范围内,从而控制该涂层组合物的优选结晶取向 (100)平面中的取向控制层。

    Method for manufacturing thin film capacitor and thin film capacitor obtained by the same
    6.
    发明申请
    Method for manufacturing thin film capacitor and thin film capacitor obtained by the same 有权
    制造薄膜电容器和薄膜电容器的方法

    公开(公告)号:US20120001298A1

    公开(公告)日:2012-01-05

    申请号:US13067800

    申请日:2011-06-28

    IPC分类号: H01L29/92 H01L21/02

    摘要: A thin film capacitor is characterized by forming a lower electrode, coating a composition onto the lower electrode without applying an annealing process having a temperature of greater than 300° C., drying at a predetermined temperature within a range from ambient temperature to 500° C., and calcining at a predetermined temperature within a range of 500 to 800° C. and higher than a drying temperature. The process from coating to calcining is performed the process from coating to calcining once or at least twice, or the process from coating to drying is performed at least twice, and then calcining is performed once. The thickness of the dielectric thin film formed after the first calcining is 20 to 600 nm. The ratio of the thickness of the lower electrode and the thickness of the dielectric thin film formed after the initial calcining step (thickness of lower electrode/thickness of the dielectric thin film) is preferably in the range 0.10 to 15.0.

    摘要翻译: 薄膜电容器的特征在于形成下电极,在不施加温度大于300℃的退火工艺的情况下将组合物涂覆在下电极上,在从环境温度至500℃的范围内的预定温度下干燥 并在500〜800℃的范围内的预定温度下煅烧并高于干燥温度。 从涂覆到煅烧的过程进行从涂覆到煅烧一次或至少两次的过程,或者从涂覆到干燥的过程进行至少两次,然后进行一次煅烧。 在第一次煅烧后形成的电介质薄膜的厚度为20〜600nm。 初始煅烧步骤后形成的下部电极的厚度与电介质薄膜的厚度之比(下部电极的厚度/电介质薄膜的厚度)优选在0.10〜15.0的范围内。

    SUBSTRATE PROCESSING METHOD AND MASK MANUFACTURING METHOD
    7.
    发明申请
    SUBSTRATE PROCESSING METHOD AND MASK MANUFACTURING METHOD 审中-公开
    基板处理方法和掩模制造方法

    公开(公告)号:US20090305153A1

    公开(公告)日:2009-12-10

    申请号:US12479202

    申请日:2009-06-05

    IPC分类号: G03F7/20 B08B3/04 B08B7/04

    摘要: A substrate processing method uses a processing fluid to selectively process only a region of a portion of a processing surface of a substrate to be processed, by causing a discharge aperture and a suction aperture of a nozzle having the discharge aperture and the suction aperture for the processing fluid and provided movable relative to the substrate to be processed to face the processing surface of the substrate and suctioning the processing fluid supplied onto the processing surface through the suction aperture while supplying the processing fluid from the discharge aperture onto the processing surface.

    摘要翻译: 基板处理方法使用处理流体仅通过使具有排出孔的喷嘴的排出孔和吸入孔和用于该待处理的基板的吸入孔的吸入孔选择性地处理待处理的基板的一部分的处理表面的区域 处理流体,并且相对于要处理的基板可移动以面对基板的处理表面,并且通过所述吸入孔抽吸供给到处理表面上的处理流体,同时将处理流体从排出孔提供到处理表面。

    Pattern forming method, photomask manufacturing method, semiconductor device manufacturing method, and computer program product
    8.
    发明授权
    Pattern forming method, photomask manufacturing method, semiconductor device manufacturing method, and computer program product 有权
    图案形成方法,光掩模制造方法,半导体器件制造方法和计算机程序产品

    公开(公告)号:US07608368B2

    公开(公告)日:2009-10-27

    申请号:US11342677

    申请日:2006-01-31

    IPC分类号: G03F9/00 G03C5/00

    摘要: A pattern forming method includes developing a resist film on a main surface of a substrate by flowing a developing solution on the film to form a resist pattern, the developing the film including partitioning the surface into M (≧2) regions and determining correction exposure dose for each of the M region, the determining the correction exposure dose including determining a correction exposure dose for an i-th (1≦i≦M) region so that an actual pattern dimension of a pattern on the i-th region matches a design pattern dimension based on a pattern opening ratio of a pattern to be formed on the substrate, the pattern being located on a region which is further upstream region than the i-th region with respect to an upstream direction of a flow of the solution, and forming the pattern by etching the substrate using the resist pattern as a mask.

    摘要翻译: 图案形成方法包括通过使显影溶液流到膜上以形成抗蚀剂图案,在基板的主表面上显影抗蚀剂膜,显影该膜包括将表面划分成M(> = 2)区域并确定校正曝光 确定校正曝光剂量,包括确定第i(1≤i≤M)区域的校正曝光剂量,使得第i个区域上的图案的实际图案尺寸 基于要在衬底上形成的图案的图案开口率来匹配设计图案尺寸,该图案位于比第i个区域的上游方向更靠上游区域的区域上 溶液,并且通过使用抗蚀剂图案作为掩模来蚀刻基板来形成图案。

    Developing method, substrate treating method, and substrate treating apparatus
    10.
    发明授权
    Developing method, substrate treating method, and substrate treating apparatus 有权
    显影方法,基板处理方法和基板处理装置

    公开(公告)号:US06929903B2

    公开(公告)日:2005-08-16

    申请号:US10653611

    申请日:2003-08-28

    CPC分类号: G03F7/30 Y10S438/906

    摘要: A developing method comprises determining in advance the relation of resist dissolution concentration in a developing solution and resist dissolution speed by the developing solution, estimating in advance the resist dissolution concentration where the resist dissolution speed is a desired speed or more from the relation, and developing in a state in which the resist dissolution concentration in the developing solution is the estimated dissolution concentration or less.

    摘要翻译: 一种显影方法包括:预先确定显影液中的抗蚀剂溶解浓度与显影液的抵抗溶解速度的关系,提前估计抗蚀剂溶解浓度,其中抗蚀剂溶解速度为所需速度或更高的关系,显影 在显影液中的抗蚀剂溶解浓度为估计的溶解浓度以下的状态。