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12 条记录 (耗时 0.019 秒)

    Atmospheric pressure plasma reactor
    3.
    发明授权
    Atmospheric pressure plasma reactor 有权
    大气压等离子体反应堆

    公开(公告)号：US08142608B2

    公开(公告)日：2012-03-27

    申请号：US11898356

    申请日：2007-09-11

    申请人： Chi-fong Ai ,  Mien-Win Wu ,  Cheng-Chang Hsieh

    发明人： Chi-fong Ai ,  Mien-Win Wu ,  Cheng-Chang Hsieh

    IPC分类号： H01L21/00 ,  C23C16/00

    CPC分类号： C23C16/509 ,  C23C16/452 ,  H01J37/32348 ,  H01J37/32825 ,  H05H1/2406 ,  H05H2001/2412 ,  H05H2001/2425

    摘要： An atmospheric pressure plasma reactor includes a high-voltage electrode, a common grounded electrode, a bias electrode and at least one dielectric layer. The high-voltage electrode is connected to a high-voltage power supply. The common grounded electrode is used with the high-voltage electrode to discharge and therefore produce planar atmospheric plasma from reactive gas. The bias electrode is used to generate bias for attracting the ions of the planar atmospheric pressure plasma. The dielectric layer is used to suppress undesirable arc discharge during the discharging.

    摘要翻译： 大气压等离子体反应器包括高压电极，公共接地电极，偏置电极和至少一个电介质层。 高压电极连接到高压电源。 公共接地电极与高电压电极一起使用以放电，因此从反应气体产生平面大气等离子体。 偏置电极用于产生用于吸引平面大气压等离子体的离子的偏压。 电介质层用于抑制放电期间的不期望的电弧放电。

    Method and apparatus for glow discharge plasma treatment of flexible material at atmospheric pressure
    5.
    发明申请
    Method and apparatus for glow discharge plasma treatment of flexible material at atmospheric pressure 审中-公开
    用于在大气压力下对柔性材料进行辉光放电等离子体处理的方法和装置

    公开(公告)号：US20070154650A1

    公开(公告)日：2007-07-05

    申请号：US11320609

    申请日：2005-12-30

    申请人： Mien-Win Wu ,  Cheng-Chang Hsieh ,  Chi-Fong Ai ,  Kuo-Chuan Cheng ,  Tien-Hsiang Hsuch

    发明人： Mien-Win Wu ,  Cheng-Chang Hsieh ,  Chi-Fong Ai ,  Kuo-Chuan Cheng ,  Tien-Hsiang Hsuch

    IPC分类号： B05D3/00 ,  H05H1/24 ,  C23C16/00 ,  B29C71/04

    CPC分类号： H01J37/32825 ,  B29C59/14 ,  H01J37/32348 ,  H01J37/3244 ,  H01J37/3277 ,  H05H1/2406 ,  H05H2001/2412 ,  H05H2240/10

    摘要： Abstract of the disclosure The present invention provides a method and an apparatus for a glow discharge plasma surface treatment of flexible sheet materials under atmospheric pressure. The apparatus comprises electrodes, a single plasma-gas flow channel, uniform gas inlet-and-outlet devices, gas-seal devices for the horizontal movements of sheet materials and reel devices, so as to attain an uniform distribution of plasma gases in the gap between electrodes. As a result, not only a great amount of expensive plasma gas is saved, but also an uniform glow discharge plasma is generated at the lowest input power to obtain a good quality of uniform plasma treatment with continuous processing and high production.

    摘要翻译： 发明内容本发明提供一种用于在大气压下对柔性片材进行辉光放电等离子体表面处理的方法和装置。 该装置包括电极，单个等离子体气体流动通道，均匀的气体入口和出口装置，用于片材和卷轴装置的水平运动的气体密封装置，以便获得等离子体气体在间隙中的均匀分布 电极之间。 结果，不仅节省了大量昂贵的等离子体气体，而且在最低输入功率下产生均匀的辉光放电等离子体，以通过连续加工和高产量获得均匀等离子体处理的良好质量。

    Large Area Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition Apparatus
    6.
    发明申请
    Large Area Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition Apparatus 审中-公开
    大面积大气压等离子体增强化学气相沉积装置

    公开(公告)号：US20120255492A1

    公开(公告)日：2012-10-11

    申请号：US13080874

    申请日：2011-04-06

    申请人： Mien-Win Wu ,  Ding-Guey Tsai ,  Hwei-Lang Chang ,  Deng-Lain Lin ,  Cheng-Chang Hsieh ,  Chi-Fong Ai

    发明人： Mien-Win Wu ,  Ding-Guey Tsai ,  Hwei-Lang Chang ,  Deng-Lain Lin ,  Cheng-Chang Hsieh ,  Chi-Fong Ai

    IPC分类号： C23C16/513 ,  C23C16/458 ,  C23C16/50 ,  C23C16/453

    CPC分类号： C23C16/545 ,  C23C16/0245 ,  C23C16/4401 ,  C23C16/45512 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/513 ,  H01J37/32366 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/32761 ,  H01J37/32825 ,  H01J37/32853

    摘要： An apparatus provides large area atmospheric pressure plasma enhanced chemical vapor deposition without contaminations in its electrode assembly and deposited films. The apparatus consists of a large area vertical planar nitrogen plasma activation electrode assembly and its high voltage power supply, a large area vertical planar nitrogen plasma deposition electrode assembly and its high voltage power supply, a long-line uniform precursor jet apparatus, a roll-to-roll apparatus for substrate movement, and a sub-atmospheric pressure deposition chamber and its pumping apparatus. Not only can the deposited film contaminations in the electrode assembly interior and the debris of the deposited films from exterior of the electrode assembly and the air aerosols in the deposition chamber be completely prevented, but a large area roll-to-roll uniform deposition can also be achieved to meet a roll-to-roll continuous production, so as to achieve improved film quality, increased production throughput and reduced manufacturing cost.

    摘要翻译： 一种装置在其电极组件和沉积膜中提供大面积的大气压等离子体增强化学气相沉积而没有污染。 该装置由大面积垂直平面氮等离子体激活电极组件及其高压电源，大面积垂直平面氮等离子体沉积电极组件及其高压电源，长线均匀前驱体喷射装置， 用于基板移动的滚动装置和次大气压力沉积室及其抽吸装置。 不仅可以完全防止电极组件内部的沉积膜污染物和电极组件外部沉积膜的碎屑和沉积室中的空气气溶胶，而且大面积的卷对卷均匀沉积也可以 实现卷对卷连续生产，从而达到提高胶片质量，提高生产量和降低制造成本的目的。

    Atmospheric pressure plasma reactor
    7.
    发明申请
    Atmospheric pressure plasma reactor 有权
    大气压等离子体反应堆

    公开(公告)号：US20100218896A1

    公开(公告)日：2010-09-02

    申请号：US11898356

    申请日：2007-09-11

    申请人： Chi-fong Ai ,  Mien-Win Wu ,  Cheng-Chang Hsieh

    发明人： Chi-fong Ai ,  Mien-Win Wu ,  Cheng-Chang Hsieh

    IPC分类号： C23F1/08 ,  C23C16/00

    CPC分类号： C23C16/509 ,  C23C16/452 ,  H01J37/32348 ,  H01J37/32825 ,  H05H1/2406 ,  H05H2001/2412 ,  H05H2001/2425

    摘要： An atmospheric pressure plasma reactor includes a high-voltage electrode, a common grounded electrode, a bias electrode and at least one dielectric layer. The high-voltage electrode is connected to a high-voltage power supply. The common grounded electrode is used with the high-voltage electrode to discharge and therefore produce planar atmospheric plasma from reactive gas. The bias electrode is used to generate bias for attracting the ions of the planar atmospheric pressure plasma. The dielectric layer is used to suppress undesirable arc discharge during the discharging.

    摘要翻译： 大气压等离子体反应器包括高压电极，公共接地电极，偏置电极和至少一个电介质层。 高压电极连接到高压电源。 公共接地电极与高电压电极一起使用以放电，因此从反应气体产生平面大气等离子体。 偏置电极用于产生用于吸引平面大气压等离子体的离子的偏压。 电介质层用于抑制放电期间的不期望的电弧放电。

    RF Hollow Cathode Plasma Generator
    8.
    发明申请
    RF Hollow Cathode Plasma Generator 审中-公开
    射频空心阴极等离子体发生器

    公开(公告)号：US20110192348A1

    公开(公告)日：2011-08-11

    申请号：US12701035

    申请日：2010-02-05

    申请人： Ching-Pei Tseng ,  Cheng-Chang Hsieh ,  Chi-Fong Ai ,  Chia-Cheng Lee ,  Deng-Lain Lin

    发明人： Ching-Pei Tseng ,  Cheng-Chang Hsieh ,  Chi-Fong Ai ,  Chia-Cheng Lee ,  Deng-Lain Lin

    IPC分类号： C23C16/00 ,  H05H1/24

    CPC分类号： C23C16/509 ,  H01J37/3244 ,  H01J37/32596

    摘要： An RF hollow cathode plasma source consists of a vacuum chamber, a pipe, a hollow cathode, at least two compartments, a conduit and input electrodes. The pipe is inserted into the chamber for introducing working gas into the chamber. The hollow cathode is disposed in the chamber and formed with a large number of apertures. At least two compartments are located below the hollow cathode. Each of the compartments includes small apertures for uniformly spreading the working gas into the apertures of the hollow cathode. The conduit is disposed along two sides of the hollow cathode to circulate cooling water around the hollow cathode. The plural input power leads are arranged near the hollow cathode. The input power leads, the pipe and the conduits are connected to the hollow cathode though the electrically-insulated walls of the grounded vacuum chamber.

    摘要翻译： RF空心阴极等离子体源由真空室，管，中空阴极，至少两个隔室，导管和输入电极组成。 将管插入腔室中以将工作气体引入腔室。 中空阴极设置在室中并形成有大量孔。 至少两个隔室位于空心阴极的下面。 每个隔室包括用于将工作气体均匀地分散到中空阴极的孔中的小孔。 导管沿空心阴极的两侧设置，以将冷却水循环在中空阴极周围。 多个输入电源引线设置在中空阴极附近。 输入功率引线，管道和导管通过接地真空室的电绝缘壁连接到空心阴极。

    PLASMA SOURCE
    9.
    发明申请
    PLASMA SOURCE 审中-公开
    等离子体源

    公开(公告)号：US20110041766A1

    公开(公告)日：2011-02-24

    申请号：US12732753

    申请日：2010-03-26

    申请人： Shih-Cheng Tseng ,  Cheng-Chang Hsieh ,  Ming-Chung Yang ,  Der-Jun Jan ,  Chi-Fong Ai

    发明人： Shih-Cheng Tseng ,  Cheng-Chang Hsieh ,  Ming-Chung Yang ,  Der-Jun Jan ,  Chi-Fong Ai

    IPC分类号： C23C16/513

    CPC分类号： H01J37/3266 ,  H01J37/3211 ,  H01J37/32174 ,  H01J37/32357

    摘要： A plasma source comprises a vacuum chamber, a plurality of discharge tubes, a plurality of permanent magnets, a plurality of RF antennas, and an RF power distribution circuit. The RF power distribution circuit is electrically coupled to an RF power supply and each of the plurality of RF antennas. The lengths of the transmission paths between each of the plurality of RF antennas and the RF power supply are the same, so that the RF power supply can provide each of discharge tubes with the same RF power.

    摘要翻译： 等离子体源包括真空室，多个放电管，多个永磁体，多个RF天线和RF功率分配电路。 RF功率分配电路电耦合到RF电源和多个RF天线中的每一个。 多个RF天线中的每一个和RF电源之间的传输路径的长度相同，使得RF电源可以为每个放电管提供相同的RF功率。

    Apparatus and Method for Growing a Microcrystalline Silicon Film
    10.
    发明申请
    Apparatus and Method for Growing a Microcrystalline Silicon Film 审中-公开
    用于生长微晶硅膜的装置和方法

    公开(公告)号：US20110014782A1

    公开(公告)日：2011-01-20

    申请号：US12390433

    申请日：2009-02-21

    申请人： Shih-Cheng TSENG ,  Cheng-Chang Hsieh ,  Der-Jun Jan ,  Chi-Fong Ai

    发明人： Shih-Cheng TSENG ,  Cheng-Chang Hsieh ,  Der-Jun Jan ,  Chi-Fong Ai

    IPC分类号： H01L21/20

    CPC分类号： H01L21/0262 ,  C23C16/24 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32449 ,  H01J37/3266 ,  H01L21/02532 ,  H01L21/02595

    摘要： Disclosed is a method for growing a microcrystalline silicon film on a substrate. The method includes the step of disposing the substrate in a chamber, the step of vacuuming the chamber and heating the substrate, the step of introducing reacting gas into the chamber as a precursor and keeping the pressure in the chamber at a predetermined value and the step of using RF energy in the chamber to dissociate the reacting gas to form plasma for growing the microcrystalline silicon film on the substrate. The reacting gas includes SiH4/Ar mixture and H2. The ratio of SiH4/Ar mixture over H2 is 1:1 to 1:20.

    摘要翻译： 公开了一种在基板上生长微晶硅膜的方法。 该方法包括将基板设置在室中的步骤，对室进行抽真空和加热基板的步骤，将反应气体引入室内作为前体并将室内的压力保持在预定值的步骤， 在室中使用RF能量以解离反应气体以形成用于在衬底上生长微晶硅膜的等离子体。 反应气体包括SiH 4 / Ar混合物和H 2。 SiH4 / Ar混合物比H2的比例为1:1至1:20。