公开(公告)号：US20110192348A1

公开(公告)日：2011-08-11

申请号：US12701035

申请日：2010-02-05

申请人： Ching-Pei Tseng ,  Cheng-Chang Hsieh ,  Chi-Fong Ai ,  Chia-Cheng Lee ,  Deng-Lain Lin

发明人： Ching-Pei Tseng ,  Cheng-Chang Hsieh ,  Chi-Fong Ai ,  Chia-Cheng Lee ,  Deng-Lain Lin

IPC分类号： C23C16/00 ,  H05H1/24

CPC分类号： C23C16/509 ,  H01J37/3244 ,  H01J37/32596

摘要： An RF hollow cathode plasma source consists of a vacuum chamber, a pipe, a hollow cathode, at least two compartments, a conduit and input electrodes. The pipe is inserted into the chamber for introducing working gas into the chamber. The hollow cathode is disposed in the chamber and formed with a large number of apertures. At least two compartments are located below the hollow cathode. Each of the compartments includes small apertures for uniformly spreading the working gas into the apertures of the hollow cathode. The conduit is disposed along two sides of the hollow cathode to circulate cooling water around the hollow cathode. The plural input power leads are arranged near the hollow cathode. The input power leads, the pipe and the conduits are connected to the hollow cathode though the electrically-insulated walls of the grounded vacuum chamber.

摘要翻译： RF空心阴极等离子体源由真空室，管，中空阴极，至少两个隔室，导管和输入电极组成。 将管插入腔室中以将工作气体引入腔室。 中空阴极设置在室中并形成有大量孔。 至少两个隔室位于空心阴极的下面。 每个隔室包括用于将工作气体均匀地分散到中空阴极的孔中的小孔。 导管沿空心阴极的两侧设置，以将冷却水循环在中空阴极周围。 多个输入电源引线设置在中空阴极附近。 输入功率引线，管道和导管通过接地真空室的电绝缘壁连接到空心阴极。

公开(公告)号：US20100225234A1

公开(公告)日：2010-09-09

申请号：US11896620

申请日：2007-09-04

申请人： Ching-Pei Tseng ,  Cheng-Chang Hsieh ,  Chi-Fong Ai ,  Chia-Cheng Lee ,  Tien-Hsiang Hsueh ,  Chun-Han Wang

发明人： Ching-Pei Tseng ,  Cheng-Chang Hsieh ,  Chi-Fong Ai ,  Chia-Cheng Lee ,  Tien-Hsiang Hsueh ,  Chun-Han Wang

IPC分类号： H05H1/24

CPC分类号： H05H1/46 ,  H01J37/32596 ,  H01J37/32724

摘要： A hollow-cathode plasma generator includes a plurality of hollow cathodes joined together and connected to a power supply for generating plasma in vacuum. Each of the hollow cathodes includes at least one fillister defined therein, a fin formed on a side of the fillister, an air-circulating tunnel in communication with the fillister and a coolant-circulating tunnel defined therein. The fillister is used to contain working gas. The fin receives negative voltage from the power supply for ionizing the working gas to generate the plasma and spread the plasma in a single direction. The working gas travels into the fillister from the air-circulating tunnel. The coolant-circulating tunnel is used to circulate coolant for cooling the hollow cathode.

摘要翻译： 中空阴极等离子体发生器包括多个连接在一起的中空阴极，并连接到用于在真空中产生等离子体的电源。 每个中空阴极包括限定在其中的至少一个填充器，形成在填充器一侧的翅片，与填充器连通的空气循环隧道和限定在其中的冷却剂循环通道。 灌装机用于容纳工作气体。 翅片从电源接收负电压，用于电离工作气体以产生等离子体并且在单个方向上扩散等离子体。 工作气体从空气循环通道进入灌装机。 冷却剂循环隧道用于循环冷却剂以冷却空心阴极。

公开(公告)号：US20120255492A1

公开(公告)日：2012-10-11

申请号：US13080874

申请日：2011-04-06

申请人： Mien-Win Wu ,  Ding-Guey Tsai ,  Hwei-Lang Chang ,  Deng-Lain Lin ,  Cheng-Chang Hsieh ,  Chi-Fong Ai

发明人： Mien-Win Wu ,  Ding-Guey Tsai ,  Hwei-Lang Chang ,  Deng-Lain Lin ,  Cheng-Chang Hsieh ,  Chi-Fong Ai

IPC分类号： C23C16/513 ,  C23C16/458 ,  C23C16/50 ,  C23C16/453

CPC分类号： C23C16/545 ,  C23C16/0245 ,  C23C16/4401 ,  C23C16/45512 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/513 ,  H01J37/32366 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/32761 ,  H01J37/32825 ,  H01J37/32853

摘要： An apparatus provides large area atmospheric pressure plasma enhanced chemical vapor deposition without contaminations in its electrode assembly and deposited films. The apparatus consists of a large area vertical planar nitrogen plasma activation electrode assembly and its high voltage power supply, a large area vertical planar nitrogen plasma deposition electrode assembly and its high voltage power supply, a long-line uniform precursor jet apparatus, a roll-to-roll apparatus for substrate movement, and a sub-atmospheric pressure deposition chamber and its pumping apparatus. Not only can the deposited film contaminations in the electrode assembly interior and the debris of the deposited films from exterior of the electrode assembly and the air aerosols in the deposition chamber be completely prevented, but a large area roll-to-roll uniform deposition can also be achieved to meet a roll-to-roll continuous production, so as to achieve improved film quality, increased production throughput and reduced manufacturing cost.

摘要翻译： 一种装置在其电极组件和沉积膜中提供大面积的大气压等离子体增强化学气相沉积而没有污染。 该装置由大面积垂直平面氮等离子体激活电极组件及其高压电源，大面积垂直平面氮等离子体沉积电极组件及其高压电源，长线均匀前驱体喷射装置， 用于基板移动的滚动装置和次大气压力沉积室及其抽吸装置。 不仅可以完全防止电极组件内部的沉积膜污染物和电极组件外部沉积膜的碎屑和沉积室中的空气气溶胶，而且大面积的卷对卷均匀沉积也可以 实现卷对卷连续生产，从而达到提高胶片质量，提高生产量和降低制造成本的目的。

公开(公告)号：US20110011737A1

公开(公告)日：2011-01-20

申请号：US12505042

申请日：2009-07-17

申请人： Jin-Yu Wu ,  Wen-Lung Liung ,  Ming-Jui Tsai ,  Der-Jun Jan ,  Cheng-Chang Hsieh ,  Shin-Wu Wei ,  Chia-Cheng Lee ,  Chi-Fong Ai

发明人： Jin-Yu Wu ,  Wen-Lung Liung ,  Ming-Jui Tsai ,  Der-Jun Jan ,  Cheng-Chang Hsieh ,  Shin-Wu Wei ,  Chia-Cheng Lee ,  Chi-Fong Ai

IPC分类号： C23C14/35

CPC分类号： H01J37/3405 ,  H01J37/3444 ,  H01J37/3467

摘要： A magnetron sputtering apparatus suitable for coating on a workpiece is provided. The magnetron sputtering apparatus includes a vacuum chamber, a holder, a magnetron plasma source and a high-power pulse power supply set, wherein the magnetron plasma source includes a base, a magnetron controller and a target. A reactive gas is inputted into the vacuum chamber, and the holder supporting the workpiece is disposed inside the vacuum chamber. The magnetron plasma source is disposed opposite to the workpiece, wherein the magnetron controller is disposed in the base, and the target is disposed on the base. The high-power pulse power supply set is coupled to the vacuum chamber, the magnetron plasma source and the holder, and a high voltage pulse power is inputted to the magnetron plasma source to generate plasma to coat a film on the surface of the workpiece.

摘要翻译： 提供了适用于在工件上涂覆的磁控溅射装置。 磁控溅射装置包括真空室，保持器，磁控管等离子体源和大功率脉冲电源组，其中磁控管等离子体源包括基极，磁控管控制器和靶。 反应气体被输入到真空室中，并且支撑工件的支架设置在真空室内。 磁控管等离子体源与工件相对设置，其中磁控管控制器设置在基座中，并且目标件设置在基座上。 大功率脉冲电源组耦合到真空室，磁控管等离子体源和保持器，并且高压脉冲功率被输入到磁控管等离子体源以产生等离子体以在工件的表面上涂覆膜。

公开(公告)号：US20070154650A1

公开(公告)日：2007-07-05

申请号：US11320609

申请日：2005-12-30

申请人： Mien-Win Wu ,  Cheng-Chang Hsieh ,  Chi-Fong Ai ,  Kuo-Chuan Cheng ,  Tien-Hsiang Hsuch

发明人： Mien-Win Wu ,  Cheng-Chang Hsieh ,  Chi-Fong Ai ,  Kuo-Chuan Cheng ,  Tien-Hsiang Hsuch

IPC分类号： B05D3/00 ,  H05H1/24 ,  C23C16/00 ,  B29C71/04

CPC分类号： H01J37/32825 ,  B29C59/14 ,  H01J37/32348 ,  H01J37/3244 ,  H01J37/3277 ,  H05H1/2406 ,  H05H2001/2412 ,  H05H2240/10

摘要： Abstract of the disclosure The present invention provides a method and an apparatus for a glow discharge plasma surface treatment of flexible sheet materials under atmospheric pressure. The apparatus comprises electrodes, a single plasma-gas flow channel, uniform gas inlet-and-outlet devices, gas-seal devices for the horizontal movements of sheet materials and reel devices, so as to attain an uniform distribution of plasma gases in the gap between electrodes. As a result, not only a great amount of expensive plasma gas is saved, but also an uniform glow discharge plasma is generated at the lowest input power to obtain a good quality of uniform plasma treatment with continuous processing and high production.

摘要翻译： 发明内容本发明提供一种用于在大气压下对柔性片材进行辉光放电等离子体表面处理的方法和装置。 该装置包括电极，单个等离子体气体流动通道，均匀的气体入口和出口装置，用于片材和卷轴装置的水平运动的气体密封装置，以便获得等离子体气体在间隙中的均匀分布 电极之间。 结果，不仅节省了大量昂贵的等离子体气体，而且在最低输入功率下产生均匀的辉光放电等离子体，以通过连续加工和高产量获得均匀等离子体处理的良好质量。

公开(公告)号：US20110041766A1

公开(公告)日：2011-02-24

申请号：US12732753

申请日：2010-03-26

申请人： Shih-Cheng Tseng ,  Cheng-Chang Hsieh ,  Ming-Chung Yang ,  Der-Jun Jan ,  Chi-Fong Ai

发明人： Shih-Cheng Tseng ,  Cheng-Chang Hsieh ,  Ming-Chung Yang ,  Der-Jun Jan ,  Chi-Fong Ai

IPC分类号： C23C16/513

CPC分类号： H01J37/3266 ,  H01J37/3211 ,  H01J37/32174 ,  H01J37/32357

摘要： A plasma source comprises a vacuum chamber, a plurality of discharge tubes, a plurality of permanent magnets, a plurality of RF antennas, and an RF power distribution circuit. The RF power distribution circuit is electrically coupled to an RF power supply and each of the plurality of RF antennas. The lengths of the transmission paths between each of the plurality of RF antennas and the RF power supply are the same, so that the RF power supply can provide each of discharge tubes with the same RF power.

摘要翻译： 等离子体源包括真空室，多个放电管，多个永磁体，多个RF天线和RF功率分配电路。 RF功率分配电路电耦合到RF电源和多个RF天线中的每一个。 多个RF天线中的每一个和RF电源之间的传输路径的长度相同，使得RF电源可以为每个放电管提供相同的RF功率。

公开(公告)号：US20080060579A1

公开(公告)日：2008-03-13

申请号：US11510824

申请日：2006-08-28

申请人： Cheng-Chang Hsieh ,  Mien-Win Wu ,  Chi-Fong Ai

发明人： Cheng-Chang Hsieh ,  Mien-Win Wu ,  Chi-Fong Ai

IPC分类号： C23C16/00

CPC分类号： H01J37/32825 ,  H01J37/32009 ,  H01J37/32348 ,  H01J37/32587

摘要： A dielectric barrier discharge uses three electrodes at an atmospheric pressure. A wide discharge gap can be used and an enhanced plasma density can be achieved so that thick materials can be processed and its processing speed can also be greatly improved.

摘要翻译： 电介质阻挡放电在大气压下使用三个电极。 可以使用宽的放电间隙，并且可以实现增强的等离子体密度，使得可以处理厚的材料并且还可以极大地改善其加工速度。

公开(公告)号：US20110014782A1

公开(公告)日：2011-01-20

申请号：US12390433

申请日：2009-02-21

申请人： Shih-Cheng TSENG ,  Cheng-Chang Hsieh ,  Der-Jun Jan ,  Chi-Fong Ai

发明人： Shih-Cheng TSENG ,  Cheng-Chang Hsieh ,  Der-Jun Jan ,  Chi-Fong Ai

IPC分类号： H01L21/20

CPC分类号： H01L21/0262 ,  C23C16/24 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32449 ,  H01J37/3266 ,  H01L21/02532 ,  H01L21/02595

摘要： Disclosed is a method for growing a microcrystalline silicon film on a substrate. The method includes the step of disposing the substrate in a chamber, the step of vacuuming the chamber and heating the substrate, the step of introducing reacting gas into the chamber as a precursor and keeping the pressure in the chamber at a predetermined value and the step of using RF energy in the chamber to dissociate the reacting gas to form plasma for growing the microcrystalline silicon film on the substrate. The reacting gas includes SiH4/Ar mixture and H2. The ratio of SiH4/Ar mixture over H2 is 1:1 to 1:20.

摘要翻译： 公开了一种在基板上生长微晶硅膜的方法。 该方法包括将基板设置在室中的步骤，对室进行抽真空和加热基板的步骤，将反应气体引入室内作为前体并将室内的压力保持在预定值的步骤， 在室中使用RF能量以解离反应气体以形成用于在衬底上生长微晶硅膜的等离子体。 反应气体包括SiH 4 / Ar混合物和H 2。 SiH4 / Ar混合物比H2的比例为1:1至1:20。

公开(公告)号：US08414980B2

公开(公告)日：2013-04-09

申请号：US12545664

申请日：2009-08-21

申请人： Tien-Hsiang Hsueh ,  Mien-Win Wu ,  Chi-Fong Ai

发明人： Tien-Hsiang Hsueh ,  Mien-Win Wu ,  Chi-Fong Ai

IPC分类号： C08J7/18

CPC分类号： B05D3/142 ,  C08J7/18 ,  C08J2427/12 ,  D06M10/025 ,  D06M14/18 ,  D06M14/22 ,  D06M14/26 ,  D06M14/28 ,  D06M14/32 ,  D06M14/34 ,  D06M2200/11 ,  D06M2200/12

摘要： A method of fabricating hydrophobic and oleophobic polymer fabric through two stages of modification using atmospheric plasmas including (a) moving a substrate into an atmospheric plasma area, generating an atmospheric filamentary discharge plasma with a first plasma working gas to obtain a first rough surface of said substrate, (b) exposing plasma treated substrate to air to obtain highly active peroxide on said first rough surface of said substrate, (c) immersing said substrate in a solution of fluorocarbon compound and processing a first stage of graft of a fluorocarbon monomer or oligomer on said substrate to obtain a grafted fluorocarbon monomer or oligomer layer on said first rough surface of said substrate, (d) processing a second stage of graft a fluorocarbon functional group to said grafted fluorocarbon monomer or oligomer layer by generating a carbon tetrafluoride plasma from a second plasma working gas and irradiating said carbon tetrafluoride plasma on said grafted fluorocarbon monomer or oligomer layer; and (e) curing and drying said substrate.

摘要翻译： 一种通过使用大气等离子体的两个阶段的修饰制造疏水和疏油聚合物织物的方法，包括：（a）将基底移动到大气等离子体区域，用第一等离子体工作气体产生大气丝状放电等离子体，以获得所述 （b）将等离子体处理的基板暴露于空气中以在所述基板的所述第一粗糙表面上获得高活性过氧化物，（c）将所述基材浸入氟碳化合物溶液中，并处理氟碳单体或低聚物的第一接枝段 在所述基板上在所述基板的所述第一粗糙表面上获得接枝的碳氟单体或低聚物层，（d）通过从所述基板上生成碳氟化合物单体或低聚物层， 第二等离子体工作气体，并且在所述接枝的氟碳上照射所述四氟化碳等离子体 单体或低聚物层; 和（e）固化和干燥所述基材。

公开(公告)号：US08062964B2

公开(公告)日：2011-11-22

申请号：US12853232

申请日：2010-08-09

申请人： Wen-Fa Tsai ,  Jyong-Fong Liao ,  Yen-Yu Chen ,  Chee Wee Liu ,  Chi-Fong Ai

发明人： Wen-Fa Tsai ,  Jyong-Fong Liao ,  Yen-Yu Chen ,  Chee Wee Liu ,  Chi-Fong Ai

IPC分类号： H01L21/26

CPC分类号： H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

摘要： The present disclosure passivates solar cell defects. Plasma immersion ion implantation (PIII) is used to repair the defects during or after making the solar cell. Hydrogen ion is implanted into absorption layer with different sums of energy to fill gaps of defects or surface recombination centers. Thus, solar cell defects are diminished and carriers are transferred with improved photovoltaic conversion efficiency.

摘要翻译： 本公开钝化太阳能电池缺陷。 在制造太阳能电池期间或之后，使用等离子体浸没离子注入（PIII）来修复缺陷。 将氢离子注入到具有不同的能量之和的吸收层中以填充缺陷或表面复合中心的间隙。 因此，太阳能电池缺陷减少，并且载流子随着光伏转换效率的提高而被转移。