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1.发明授权Solder masks including dams for at least partially surrounding terminals of a carrier substrate and recessed areas positioned adjacent to the dams, and carrier substrates including such solder masks 有权焊接掩模包括用于至少部分地围绕载体基板的端子和与坝相邻定位的凹陷区域的坝，以及包括这种焊接掩模的载体基板公开(公告)号：US07061124B2
公开(公告)日：2006-06-13
申请号：US10936304
申请日：2004-09-07
申请人： Cher Khng Victor Tan , Choon Kuan Lee , Kian Chai Lee , Guek Har Lim , Wuu Yean Tay , Teck Huat Poh , Cheng Poh Pour
发明人： Cher Khng Victor Tan , Choon Kuan Lee , Kian Chai Lee , Guek Har Lim , Wuu Yean Tay , Teck Huat Poh , Cheng Poh Pour
CPC分类号： H01L24/83 , B33Y80/00 , H01L23/13 , H01L23/16 , H01L23/3121 , H01L23/538 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/97 , H01L2224/05554 , H01L2224/05599 , H01L2224/27013 , H01L2224/2919 , H01L2224/32057 , H01L2224/32188 , H01L2224/32225 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/73265 , H01L2224/83051 , H01L2224/8319 , H01L2224/83385 , H01L2224/8385 , H01L2224/85385 , H01L2224/85444 , H01L2224/85455 , H01L2224/97 , H01L2924/00014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01087 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/15787 , H01L2924/15788 , H05K3/305 , H05K3/3452 , H05K2201/09036 , H05K2201/09909 , H05K2201/10689 , H01L2224/85 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： A solder mask for use on a carrier substrate includes a device-securing region positionable over at least a portion of a die-support location of the carrier substrate. Dams of the solder mask are positionable laterally adjacent to at least portions of the peripheries of corresponding terminals of the carrier substrate. A carrier substrate includes at least one die-attach location and one or more terminals that protrude from a surface of the carrier substrate so as to prevent adhesive material from contaminating connection surfaces thereof. The solder may be positioned or formed on the carrier substrate. The carrier substrate and solder mask may each include one or more recessed areas that laterally surround at least portions of their die-attach location and device-securing region, respectively, to receive excess adhesive.
摘要翻译： 用于载体衬底的焊接掩模包括可位于载体衬底的管芯支撑位置的至少一部分上的器件固定区域。 焊料掩模的大坝位于横向邻近于载体衬底的相应端子的周边的至少一部分。 载体基板包括至少一个管芯附着位置和从载体衬底的表面突出的一个或多个端子，以防止粘合剂材料污染其连接表面。 焊接掩模可以定位或形成在载体基板上。 载体衬底和焊料掩模可以各自包括一个或多个凹陷区域，其分别横向包围其管芯附接位置和器件固定区域的至少一部分，以容纳多余的粘合剂。
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2.发明授权公开(公告)号：US07371608B2
公开(公告)日：2008-05-13
申请号：US10389433
申请日：2003-03-14
申请人： Hock Chuan Tan , Thiam Chye Lim , Victor Cher Khng Tan , Chee Peng Neo , Michael Kian Shing Tan , Beng Chye Chew , Cheng Poh Pour
发明人： Hock Chuan Tan , Thiam Chye Lim , Victor Cher Khng Tan , Chee Peng Neo , Michael Kian Shing Tan , Beng Chye Chew , Cheng Poh Pour
CPC分类号： H01L25/074 , H01L23/3128 , H01L23/49816 , H01L23/49827 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/86 , H01L25/0657 , H01L25/50 , H01L29/0657 , H01L2224/05599 , H01L2224/11 , H01L2224/1132 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/1319 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/2919 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/48463 , H01L2224/73265 , H01L2224/83101 , H01L2224/83191 , H01L2224/83192 , H01L2224/83193 , H01L2224/83855 , H01L2224/8388 , H01L2224/85205 , H01L2224/85399 , H01L2225/0651 , H01L2225/06517 , H01L2225/06555 , H01L2225/06575 , H01L2225/06586 , H01L2924/00014 , H01L2924/01005 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01061 , H01L2924/01074 , H01L2924/01079 , H01L2924/01087 , H01L2924/014 , H01L2924/0665 , H01L2924/078 , H01L2924/07802 , H01L2924/10158 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2224/45015 , H01L2924/207
摘要： Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.
摘要翻译： 提供半导体器件和堆叠管芯组件，以及制造用于增加半导体器件密度的器件和组件的方法。
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公开(公告)号：US08373277B2
公开(公告)日：2013-02-12
申请号：US12020738
申请日：2008-01-28
申请人： Hock Chuan Tan , Thiam Chye Lim , Victor Cher Khng Tan , Chee Peng Neo , Michael Kian Shing Tan , Beng Chye Chew , Cheng Poh Pour
发明人： Hock Chuan Tan , Thiam Chye Lim , Victor Cher Khng Tan , Chee Peng Neo , Michael Kian Shing Tan , Beng Chye Chew , Cheng Poh Pour
IPC分类号： H01L23/12
CPC分类号： H01L25/074 , H01L23/3128 , H01L23/49816 , H01L23/49827 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/86 , H01L25/0657 , H01L25/50 , H01L29/0657 , H01L2224/05599 , H01L2224/11 , H01L2224/1132 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/1319 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/2919 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/48463 , H01L2224/73265 , H01L2224/83101 , H01L2224/83191 , H01L2224/83192 , H01L2224/83193 , H01L2224/83855 , H01L2224/8388 , H01L2224/85205 , H01L2224/85399 , H01L2225/0651 , H01L2225/06517 , H01L2225/06555 , H01L2225/06575 , H01L2225/06586 , H01L2924/00014 , H01L2924/01005 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01061 , H01L2924/01074 , H01L2924/01079 , H01L2924/01087 , H01L2924/014 , H01L2924/0665 , H01L2924/078 , H01L2924/07802 , H01L2924/10158 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2224/45015 , H01L2924/207
摘要： Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.
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公开(公告)号：US07282392B2
公开(公告)日：2007-10-16
申请号：US11511956
申请日：2006-08-29
申请人： Hock Chuan Tan , Thiam Chye Lim , Victor Cher Khng Tan , Chee Peng Neo , Michael Kian Shing Tan , Beng Chye Chew , Cheng Poh Pour
发明人： Hock Chuan Tan , Thiam Chye Lim , Victor Cher Khng Tan , Chee Peng Neo , Michael Kian Shing Tan , Beng Chye Chew , Cheng Poh Pour
CPC分类号： H01L25/074 , H01L23/3128 , H01L23/49816 , H01L23/49827 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/86 , H01L25/0657 , H01L25/50 , H01L29/0657 , H01L2224/05599 , H01L2224/11 , H01L2224/1132 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/1319 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/2919 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/48463 , H01L2224/73265 , H01L2224/83101 , H01L2224/83191 , H01L2224/83192 , H01L2224/83193 , H01L2224/83855 , H01L2224/8388 , H01L2224/85205 , H01L2224/85399 , H01L2225/0651 , H01L2225/06517 , H01L2225/06555 , H01L2225/06575 , H01L2225/06586 , H01L2924/00014 , H01L2924/01005 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01061 , H01L2924/01074 , H01L2924/01079 , H01L2924/01087 , H01L2924/014 , H01L2924/0665 , H01L2924/078 , H01L2924/07802 , H01L2924/10158 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2224/45015 , H01L2924/207
摘要： Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.
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公开(公告)号：US07358117B2
公开(公告)日：2008-04-15
申请号：US11511941
申请日：2006-08-29
申请人： Hock Chuan Tan , Thiam Chye Lim , Victor Cher Khng Tan , Chee Peng Neo , Michael Kian Shing Tan , Beng Chye Chew , Cheng Poh Pour
发明人： Hock Chuan Tan , Thiam Chye Lim , Victor Cher Khng Tan , Chee Peng Neo , Michael Kian Shing Tan , Beng Chye Chew , Cheng Poh Pour
IPC分类号： H01L21/44
CPC分类号： H01L25/074 , H01L23/3128 , H01L23/49816 , H01L23/49827 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/86 , H01L25/0657 , H01L25/50 , H01L29/0657 , H01L2224/05599 , H01L2224/11 , H01L2224/1132 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/1319 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/2919 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/48463 , H01L2224/73265 , H01L2224/83101 , H01L2224/83191 , H01L2224/83192 , H01L2224/83193 , H01L2224/83855 , H01L2224/8388 , H01L2224/85205 , H01L2224/85399 , H01L2225/0651 , H01L2225/06517 , H01L2225/06555 , H01L2225/06575 , H01L2225/06586 , H01L2924/00014 , H01L2924/01005 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01061 , H01L2924/01074 , H01L2924/01079 , H01L2924/01087 , H01L2924/014 , H01L2924/0665 , H01L2924/078 , H01L2924/07802 , H01L2924/10158 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2224/45015 , H01L2924/207
摘要： Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.
摘要翻译： 提供半导体器件和堆叠管芯组件，以及制造用于增加半导体器件密度的器件和组件的方法。
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公开(公告)号：US07344969B2
公开(公告)日：2008-03-18
申请号：US10424470
申请日：2003-04-28
申请人： Hock Chuan Tan , Thiam Chye Lim , Victor Cher Khng Tan , Chee Peng Neo , Michael Kian Shing Tan , Beng Chye Chew , Cheng Poh Pour
发明人： Hock Chuan Tan , Thiam Chye Lim , Victor Cher Khng Tan , Chee Peng Neo , Michael Kian Shing Tan , Beng Chye Chew , Cheng Poh Pour
IPC分类号： H01L23/48
CPC分类号： H01L25/074 , H01L23/3128 , H01L23/49816 , H01L23/49827 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/86 , H01L25/0657 , H01L25/50 , H01L29/0657 , H01L2224/05599 , H01L2224/11 , H01L2224/1132 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/1319 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/2919 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/48463 , H01L2224/73265 , H01L2224/83101 , H01L2224/83191 , H01L2224/83192 , H01L2224/83193 , H01L2224/83855 , H01L2224/8388 , H01L2224/85205 , H01L2224/85399 , H01L2225/0651 , H01L2225/06517 , H01L2225/06555 , H01L2225/06575 , H01L2225/06586 , H01L2924/00014 , H01L2924/01005 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01061 , H01L2924/01074 , H01L2924/01079 , H01L2924/01087 , H01L2924/014 , H01L2924/0665 , H01L2924/078 , H01L2924/07802 , H01L2924/10158 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2224/45015 , H01L2924/207
摘要： Semiconductor devices and stacked die assemblies, and methods of fabrication are provided. In various embodiments, the die assembly comprises a first die mounted on a substrate and a second die mounted on the first die. In one embodiment, the second die has a recessed edge along the perimeter of the bottom surface to provide clearance for a bonding element extending from bond pads on the first die to pads on the substrate, thus eliminating the need for a spacer between the two dies. In another embodiment, the second die is at least partially disposed within a recess in the upper surface of the first die. In another embodiment, an adhesive element is disposed within a recess in the bottom surface of the first die for attaching the first die to the substrate. In yet another embodiment, the first die is at least partially disposed within a recess within the bottom surface of the second die. The stacked die assemblies can be encapsulated to form semiconductor packages.
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公开(公告)号：US07282390B2
公开(公告)日：2007-10-16
申请号：US11440913
申请日：2006-05-25
申请人： Hock Chuan Tan , Thiam Chye Lim , Victor Cher Khng Tan , Chee Peng Neo , Michael Kian Shing Tan , Beng Chye Chew , Cheng Poh Pour
发明人： Hock Chuan Tan , Thiam Chye Lim , Victor Cher Khng Tan , Chee Peng Neo , Michael Kian Shing Tan , Beng Chye Chew , Cheng Poh Pour
CPC分类号： H01L25/074 , H01L23/3128 , H01L23/49816 , H01L23/49827 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/86 , H01L25/0657 , H01L25/50 , H01L29/0657 , H01L2224/05599 , H01L2224/11 , H01L2224/1132 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/1319 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/2919 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/48463 , H01L2224/73265 , H01L2224/83101 , H01L2224/83191 , H01L2224/83192 , H01L2224/83193 , H01L2224/83855 , H01L2224/8388 , H01L2224/85205 , H01L2224/85399 , H01L2225/0651 , H01L2225/06517 , H01L2225/06555 , H01L2225/06575 , H01L2225/06586 , H01L2924/00014 , H01L2924/01005 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01061 , H01L2924/01074 , H01L2924/01079 , H01L2924/01087 , H01L2924/014 , H01L2924/0665 , H01L2924/078 , H01L2924/07802 , H01L2924/10158 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2224/45015 , H01L2924/207
摘要： Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies are provided. In an embodiment of the methods, a second die is mounted on a first die which is at least partially received within a recess of the second die and an overall height of the dies within the device is less than a combined height of the dies.
摘要翻译： 提供半导体器件和堆叠管芯组件，以及制造器件和组件的方法。 在所述方法的一个实施例中，第二管芯安装在第一管芯上，所述第一管芯至少部分地容纳在第二管芯的凹部内，并且器件内的管芯的整体高度小于管芯的组合高度。
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公开(公告)号：US07575953B2
公开(公告)日：2009-08-18
申请号：US11959013
申请日：2007-12-18
申请人： Hock Chuan Tan , Thiam Chye Lim , Victor Cher Khng Tan , Chee Peng Neo , Michael Kian Shing Tan , Beng Chye Chew , Cheng Poh Pour
发明人： Hock Chuan Tan , Thiam Chye Lim , Victor Cher Khng Tan , Chee Peng Neo , Michael Kian Shing Tan , Beng Chye Chew , Cheng Poh Pour
CPC分类号： H01L25/074 , H01L23/3128 , H01L23/49816 , H01L23/49827 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/86 , H01L25/0657 , H01L25/50 , H01L29/0657 , H01L2224/05599 , H01L2224/11 , H01L2224/1132 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/1319 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/2919 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/48463 , H01L2224/73265 , H01L2224/83101 , H01L2224/83191 , H01L2224/83192 , H01L2224/83193 , H01L2224/83855 , H01L2224/8388 , H01L2224/85205 , H01L2224/85399 , H01L2225/0651 , H01L2225/06517 , H01L2225/06555 , H01L2225/06575 , H01L2225/06586 , H01L2924/00014 , H01L2924/01005 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01061 , H01L2924/01074 , H01L2924/01079 , H01L2924/01087 , H01L2924/014 , H01L2924/0665 , H01L2924/078 , H01L2924/07802 , H01L2924/10158 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2224/45015 , H01L2924/207
摘要： Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.
摘要翻译： 提供半导体器件和堆叠管芯组件，以及制造用于增加半导体器件密度的器件和组件的方法。
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公开(公告)号：US20080136045A1
公开(公告)日：2008-06-12
申请号：US12020738
申请日：2008-01-28
申请人： Hock Chuan Tan , Thiam Chye Lim , Victor Cher Khng Tan , Chee Peng Neo , Michael Kian Shing Tan , Beng Chye Chew , Cheng Poh Pour
发明人： Hock Chuan Tan , Thiam Chye Lim , Victor Cher Khng Tan , Chee Peng Neo , Michael Kian Shing Tan , Beng Chye Chew , Cheng Poh Pour
CPC分类号： H01L25/074 , H01L23/3128 , H01L23/49816 , H01L23/49827 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/86 , H01L25/0657 , H01L25/50 , H01L29/0657 , H01L2224/05599 , H01L2224/11 , H01L2224/1132 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/1319 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/2919 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/48463 , H01L2224/73265 , H01L2224/83101 , H01L2224/83191 , H01L2224/83192 , H01L2224/83193 , H01L2224/83855 , H01L2224/8388 , H01L2224/85205 , H01L2224/85399 , H01L2225/0651 , H01L2225/06517 , H01L2225/06555 , H01L2225/06575 , H01L2225/06586 , H01L2924/00014 , H01L2924/01005 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01061 , H01L2924/01074 , H01L2924/01079 , H01L2924/01087 , H01L2924/014 , H01L2924/0665 , H01L2924/078 , H01L2924/07802 , H01L2924/10158 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2224/45015 , H01L2924/207
摘要： Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.
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公开(公告)号：US07332820B2
公开(公告)日：2008-02-19
申请号：US10424426
申请日：2003-04-28
申请人： Hock Chuan Tan , Thiam Chye Lim , Victor Cher Khng Tan , Chee Peng Neo , Michael Kian Shing Tan , Beng Chye Chew , Cheng Poh Pour
发明人： Hock Chuan Tan , Thiam Chye Lim , Victor Cher Khng Tan , Chee Peng Neo , Michael Kian Shing Tan , Beng Chye Chew , Cheng Poh Pour
IPC分类号： H01L23/48
CPC分类号： H01L25/074 , H01L23/3128 , H01L23/49816 , H01L23/49827 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/86 , H01L25/0657 , H01L25/50 , H01L29/0657 , H01L2224/05599 , H01L2224/11 , H01L2224/1132 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/1319 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/2919 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/48463 , H01L2224/73265 , H01L2224/83101 , H01L2224/83191 , H01L2224/83192 , H01L2224/83193 , H01L2224/83855 , H01L2224/8388 , H01L2224/85205 , H01L2224/85399 , H01L2225/0651 , H01L2225/06517 , H01L2225/06555 , H01L2225/06575 , H01L2225/06586 , H01L2924/00014 , H01L2924/01005 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01061 , H01L2924/01074 , H01L2924/01079 , H01L2924/01087 , H01L2924/014 , H01L2924/0665 , H01L2924/078 , H01L2924/07802 , H01L2924/10158 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2224/45015 , H01L2924/207
摘要： Semiconductor devices and stacked die assemblies, and methods of fabrication are provided. In various embodiments, the die assembly comprises a first die mounted on a substrate and a second die mounted on the first die. In one embodiment, the second die has a recessed edge along the perimeter of the bottom surface to provide clearance for a bonding element extending from bond pads on the first die to pads on the substrate, thus eliminating the need for a spacer between the two dies. In another embodiment, the second die is at least partially disposed within a recess in the upper surface of the first die. In another embodiment, an adhesive element is disposed within a recess in the bottom surface of the first die for attaching the first die to the substrate. In yet another embodiment, the first die is at least partially disposed within a recess within the bottom surface of the second die. The stacked die assemblies can be encapsulated to form semiconductor packages.
摘要翻译： 提供半导体器件和堆叠管芯组件以及制造方法。 在各种实施例中，模具组件包括安装在基板上的第一模具和安装在第一模具上的第二模具。 在一个实施例中，第二管芯具有沿着底表面的周边的凹入边缘，以为从第一管芯上的焊盘延伸到衬底上的焊盘的接合元件提供间隙，从而消除了对两个管芯之间的间隔件的需要 。 在另一个实施例中，第二管芯至少部分地设置在第一管芯的上表面的凹部内。 在另一个实施例中，粘合元件设置在第一管芯的底表面的凹槽内，用于将第一管芯附接到基底。 在另一个实施例中，第一管芯至少部分地设置在第二管芯的底表面内的凹槽内。 堆叠的管芯组件可以被封装以形成半导体封装。
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