摘要:
A method for fabricating a circuit trace on a core board having a buried hole is provided. The method includes: providing a carrier plate having a detachable metal layer, an etching barrier layer, and a metal layer sequentially stacked thereon; roughening the metal layer which can be completely roughened; laminating the bonded metal layer, the etching barrier layer, the detachable metal layer and the carrier plate onto a dielectric, wherein the metal layer faces and contacts with the dielectric; and then removing the carrier plate therefrom. As such, even if the dielectric is difficult to be completely roughened, the roughened metal layer can enhance the bondability between the metal layer and the dielectric. The metal layer is processed to become the circuit trace later.
摘要:
Structure and method of making a board having plating though hole (PTH) core layer substrate and stacked multiple layers of blind vias. More stacking layers of blind vias than conventional methods can be achieved. The fabrication method of the board having high-density core layer includes the following: after the making of the PTH, the filling material filled inside the PTH of the core layer is partially removed until the PTH has reached an appropriate flattened depression using etching; then image transfer and pattern plating are performed to fill and to level the depression portion up to a desired thickness to form a copper pad (overplating) as the core layer substrate is forming a circuit layer; finally using electroless copper deposition and the pattern plating to make the product.
摘要:
Disclosed is a semiconductor load board, including a substrate, a plurality of connection pads, a patterned circuit layer, a dielectric layer, a plurality of solder pads, and a plurality of solders. The connection pads and the patterned circuit layer are located on the substrate. The dielectric layer is formed on the substrate, the connection pads and the patterned circuit layer, and has a plurality of openings corresponding to the plurality of connection pads. The solder pads are formed in the openings, and the width of the solder pads is smaller than or equals to the maximum width of the openings of the dielectric layer, and a protruding portion which has a width smaller than the minimum width of the openings of the dielectric layer can also be formed, such that the problems of short-circuit failure and electrical interference can be reduced.
摘要:
A method for fabricating a component-embedded PCB includes: providing a carrier plate having a plating metal layer plated thereon; disposing an electronic component on the plating metal layer of the carrier plate; laminating a metal layer onto the plating metal layer having the electronic component disposed thereon and the carrier plate by a dielectric film; removing the carrier plate and exposing the plating metal layer; and patterning at least one of the metal layer and the plating metal layer to be a circuit layer.
摘要:
A circuit board includes a core layer substrate having a plated through hole filled with a dielectric material. The plated through hole has a sidewall coated with an inner electroless copper layer, and an electroplated metal layer plated on the inner electroless copper layer before the plated through hole is filled with the dielectric material. The outer portion of the filled plated through hole is thicker than the center portion and tapered toward the center portion to form a depressed surface on the filled plated through hole. The core layer substrate is covered with a patterned electroless copper layer and a patterned electroplated copper layer that connect with the inner electroless copper layer and electroplated metal layer of the plated through hole. The patterned electroplated copper layer forms a flat copper pad above the plated through hole.
摘要:
A method for fabricating a buried capacitor structure includes: laminating a first dielectric layer having a capacitor embedded therein with a second dielectric layer to bury the capacitor therebetween; forming a first circuit pattern on a first metal layer of the first dielectric layer and a second circuit pattern on a second metal layer of the second dielectric layer; depositing a first insulating layer and a second insulating layer on the first metal layer and the second metal layer, respectively; electrically connecting a positive electrode end and a negative electrode end of the capacitor to the second metal layer by a positive through-hole and a negative through-hole, thereby manufacturing the buried capacitor structure.
摘要:
A non-plating line (NPL) plating method is provided. The NPL plating method is featured in that at first it forms a circuit layer on a bump side only, and therefore a plating current can be transmitted via a plating metal layer on a ball side to the circuit layer (enclosed by an insulation layer, e.g., a solder resist or a photoresist) on the bump side, and thus forming a protection layer, e.g., plating gold, on the plating metal layer on the circuit layer and the ball side. In such a way, the plating gold is formed after the insulation layer, so that there won't be any plating gold existed beneath the insulation layer of the bump side (connected with dies). Hence, the insulation layer can be prevented from dropping off from the protection layer, i.e., the plating gold, and thus the reliability of the products can be improved.
摘要:
A high-density fine line structure mainly includes: two boards with similar structures and a dielectric film for combing the two boards. Semiconductor devices respectively in two boards are opposite to each other after the two boards are combined. The two boards each include a fine line circuit, an insulated layer on the same surface, and the semiconductor device installed above the fine line circuit. The surface of the circuit, which is not covered by a solder mask, is made into a pad. The pad is filled with the tin balls for electrically connecting with another semiconductor device. Electroplating rather than the etching method is used for forming the fine line circuit layer, and a carrier and a metal barrier layer, which are needed during or at the end of the manufacturing process, are removed to increase the wiring density for realizing the object of high-density.
摘要:
A manufacturing method of a semiconductor load board is disclosed. The manufacturing method includes a first conductive layer forming step, a first patterning step, a dielectric layer forming step, a drilling step, a second conductive layer forming step, a second patterning step or a two-times patterning step, and a solder connecting step. In a second patterning step or a two-times patterning step, a solder pad is formed in the opening of the dielectric layer, wherein each solder pad has a height higher than the height of the dielectric, and the width of each solder pad is equal to or smaller than the maximum width of the opening, such that wider intervals are provided in the same area and the problems of short circuit failure and electrical interference can be reduced.
摘要:
A method for manufacturing a heat dissipation structure of a printed circuit board includes: forming a barrier layer on the dimple in the first copper plating layer; forming a nickel plating layer; removing the nickel plating layer and the barrier layer on the dimple; forming a second copper plating layer to make the total height of the first copper plating layer and the second copper plating layer in the second opening higher than that of the first copper plating layer in the first opening; filling the dimple in the second copper plating layer with an etching-resistant material; removing the second copper plating layer; removing the nickel plating layer and the etching-resistant material to make the second copper plating layer in the second opening being at the same height as the first copper plating layer in the first opening; and forming the heat dissipation structure by photolithography.