公开(公告)号：US20070259516A1

公开(公告)日：2007-11-08

申请号：US11429708

申请日：2006-05-08

申请人： Christopher Jahnes ,  Satyanarayana Nitta ,  Kevin Petrarca ,  Katherine Saenger

发明人： Christopher Jahnes ,  Satyanarayana Nitta ,  Kevin Petrarca ,  Katherine Saenger

IPC分类号： H01L21/4763

CPC分类号： H01L21/7682 ,  H01L21/76808 ,  H01L21/76831 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2221/1026 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/00

摘要： A multilevel air-gap-containing interconnect structure and a method of fabricating the same are provided. The multilevel air-gap-containing interconnect structure includes a collection of interspersed line levels and via levels, with via levels comprising conductive vias embedded in one or more dielectric layers in which the dielectric layers are solid underneath and above line features in adjacent levels, and perforated between line features. The line levels contain conductive lines and an air-gap-containing dielectric. A solid dielectric bridge layer, containing conductive contacts and formed by filling in a perforated dielectric layer, is disposed over the collection of interspersed line and via levels.

摘要翻译： 提供了一种具有多级气隙的互连结构及其制造方法。 多层含气隙的互连结构包括散布的线电平和通孔电平的集合，其中通孔层包括嵌入在一个或多个电介质层中的导电通孔，其中电介质层在相邻电平之下的电极特征和固定电极层之上，以及 线之间穿孔特征。 线路电平包含导电线和含气隙的电介质。 包含导电接触并通过填充有孔电介质层形成的固体介质桥接层设置在散布的线路和通孔层的集合上。

公开(公告)号：US20060183062A1

公开(公告)日：2006-08-17

申请号：US10906268

申请日：2005-02-11

申请人： Christos Dimitrakopoulos ,  Daniel Edelstein ,  Vincent McGahay ,  Satyanarayana Nitta ,  Kevin Petrarca ,  Shom Ponoth ,  Shahab Siddiqui

发明人： Christos Dimitrakopoulos ,  Daniel Edelstein ,  Vincent McGahay ,  Satyanarayana Nitta ,  Kevin Petrarca ,  Shom Ponoth ,  Shahab Siddiqui

IPC分类号： G03F7/00

CPC分类号： G03F7/2022

摘要： A method of selectively altering material properties of a substrate in one region while making a different alteration of material properties in an adjoining region is provided. The method includes selectively masking a first portion of the substrate during a first exposure and selectively masking a second portion of the substrate during a second exposure. Additionally, a mask may be formed having more than one thickness where each thickness will selectively reduce the amount of energy from a blanket exposure of the substrate thereby allowing a substrate to receive different levels of energy dosage in a single blanket exposure.

摘要翻译： 提供了一种在邻接区域中对材料性质进行不同的改变的同时选择性地改变一个区域中的衬底的材料特性的方法。 该方法包括在第一曝光期间选择性地掩蔽衬底的第一部分，并且在第二次曝光期间选择性地掩蔽衬底的第二部分。 另外，可以形成具有多于一个厚度的掩模，其中每个厚度将选择性地减少来自衬底的覆盖曝光的能量的量，从而允许衬底在单次覆盖曝光中接收不同水平的能量。

公开(公告)号：US20050106762A1

公开(公告)日：2005-05-19

申请号：US10853771

申请日：2004-05-25

申请人： Nirupama Chakrapani ,  Matthew Colburn ,  Christos Dimitrakopoulos ,  Dirk Pfeiffer ,  Sampath Purushothaman ,  Satyanarayana Nitta

发明人： Nirupama Chakrapani ,  Matthew Colburn ,  Christos Dimitrakopoulos ,  Dirk Pfeiffer ,  Sampath Purushothaman ,  Satyanarayana Nitta

IPC分类号： H01L21/00 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/768

CPC分类号： H01L21/76826 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/31058 ,  H01L21/76807 ,  H01L21/76814 ,  H01L2924/0002 ,  H01L2924/00

摘要： Often used to reduce the RC delay in integrated circuits are dielectric films of porous organosilicates which have a silica like backbone with alkyl or aryl groups (to add hydrophobicity to the materials and create free volume) attached directly to the Si atoms in the network. Si—R bonds rarely survive an exposure to plasmas or chemical treatments commonly used in processing; this is especially the case in materials with an open cell pore structure. When Si—R bonds are broken, the materials lose hydrophobicity, due to formation of hydrophilic silanols and low dielectric constant is compromised. A method by which the hydrophobicity of the materials is recovered using a novel class of silylation agents which may have the general formula (R2N)XSiR′Y where X and Y are integers from 1 to 3 and 3 to 1 respectively, and where R and R′ are selected from the group of hydrogen, alkyl, aryl, allyl and a vinyl moiety. Mechanical strength of porous organosilicates is also improved as a result of the silylation treatment.

摘要翻译： 通常用于减少集成电路中的RC延迟的是多孔有机硅酸盐的介电膜，其具有二氧化硅像主链与烷基或芳基（以增加材料的疏水性并产生自由体积）直接连接到网络中的Si原子。 Si-R键在暴露于等离子体或通常用于加工的化学处理中很少存活; 这在具有开孔细孔结构的材料中尤其如此。 当Si-R键断裂时，材料由于形成亲水硅烷醇而损失疏水性，并且低介电常数受损。 使用新型甲硅烷基化剂回收材料的疏水性的方法，其可以具有通式（R 2 N 2）X SiR'Y 其中X和Y分别为1至3和3至1的整数，并且其中R和R'选自氢，烷基，芳基，烯丙基和乙烯基部分。 由于甲硅烷基化处理，多孔有机硅酸盐的机械强度也得到改善。

公开(公告)号：US20070048981A1

公开(公告)日：2007-03-01

申请号：US11162219

申请日：2005-09-01

申请人： Griselda Bonilla ,  Richard Conti ,  Timothy Dalton ,  Nicholas Fuller ,  Kelly Malone ,  Satyanarayana Nitta ,  Shom Ponoth

发明人： Griselda Bonilla ,  Richard Conti ,  Timothy Dalton ,  Nicholas Fuller ,  Kelly Malone ,  Satyanarayana Nitta ,  Shom Ponoth

IPC分类号： H01L21/04

CPC分类号： H01L21/31695 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/76826

摘要： A method for protecting a semiconductor device from carbon depletion type damage includes enriching an exposed surface of a porous interlevel dielectric material (ILD) with a carbon based material, and implementing a plasma based operation on the porous ILD material. The enriching of the porous ILD material reduces effects of carbon depletion as a result of the plasma based operation.

摘要翻译： 用于保护半导体器件免受碳耗竭型损伤的方法包括用碳基材料富集多孔层间电介质材料（ILD）的暴露表面，以及对多孔ILD材料实施基于等离子体的操作。 作为基于等离子体的操作的结果，多孔ILD材料的富集减少了碳耗竭的影响。

公开(公告)号：US20060258159A1

公开(公告)日：2006-11-16

申请号：US11130078

申请日：2005-05-16

申请人： Matthew Colburn ,  Ricardo Donaton ,  Conal Murray ,  Satyanarayana Nitta ,  Sampath Purushothaman ,  Sujatha Sankaran ,  Theodorus Eduardus Fransiscus Standaert ,  Xiao Liu

发明人： Matthew Colburn ,  Ricardo Donaton ,  Conal Murray ,  Satyanarayana Nitta ,  Sampath Purushothaman ,  Sujatha Sankaran ,  Theodorus Eduardus Fransiscus Standaert ,  Xiao Liu

IPC分类号： H01B13/00 ,  H01L21/302 ,  B44C1/22

CPC分类号： H01L21/32139 ,  H01L21/0271 ,  H01L21/31144 ,  H01L21/7682

摘要： A process for preparing an electronics structure involves coating a substrate stack with a sacrificial multilayer hardmask stack, developing a pattern in a resist layer coated on a topmost layer of the multilayer hardmask stack, transferring the pattern into the hardmask stack, blocking a portion of the pattern, and then transferring an unblocked portion of the pattern into the substrate stack. Electronics structures prepared with the process are useful to prepare electronics devices, such as computers and the like. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader quickly to ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the appended issued claims.

摘要翻译： 用于制备电子结构的方法包括用牺牲多层硬掩模堆叠涂覆衬底叠层，在涂覆在多层硬掩模堆叠的最上层上的抗蚀剂层中形成图案，将图案转移到硬掩模堆叠中，阻挡部分 图案，然后将图案的未封闭部分转印到基底叠层中。 使用该方法制备的电子结构对制备电子设备（例如计算机等）是有用的。 要强调的是，该摘要被提供以符合要求抽象的规则，这将允许搜索者或其他读者快速地确定技术公开的主题。 提交它的理解是，它不会用于解释或限制所附权利要求的范围或含义。

公开(公告)号：US20050233597A1

公开(公告)日：2005-10-20

申请号：US11143793

申请日：2005-06-02

申请人： Matthew Colburn ,  Stephen Gates ,  Jeffrey Hedrick ,  Elbert Huang ,  Satyanarayana Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

发明人： Matthew Colburn ,  Stephen Gates ,  Jeffrey Hedrick ,  Elbert Huang ,  Satyanarayana Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

IPC分类号： H01L21/027 ,  B32B3/00 ,  G03F7/00 ,  G03F7/16 ,  G03F7/26 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/469

CPC分类号： H05K3/0079 ,  H01L21/0331 ,  H01L21/76849 ,  H05K3/282 ,  H05K2203/1173 ,  Y10T428/24802

摘要： A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.

摘要翻译： 一种用于在衬底上的现有图案上形成自对准图案的方法，包括在载体中涂覆含有掩蔽材料的溶液的涂层，所述掩模材料对现有图案的部分具有亲和力; 并且允许掩模材料的至少一部分优先组装到现有图案的部分。 该图案可以由具有第一原子组成的衬底的第一组区域和第二组衬底的区域组成，其具有不同于第一组成的第二原子组成。 第一组区域可以包括一个或多个金属元件，并且第二组区域可以包括电介质。 可以将第一和第二区域处理成具有不同的表面性质。 按照该方法制造的结构。 用于练习该方法的组合物。

公开(公告)号：US20060264036A1

公开(公告)日：2006-11-23

申请号：US11491816

申请日：2006-07-24

申请人： Shyng-Tsong Chen ,  Stefanie Chiras ,  Matthew Colburn ,  Tomothy Dalton ,  Jeffrey Hedrick ,  Elbert Huang ,  Kaushik Kumar ,  Michael Lane ,  Kelly Malone ,  Chandrasekhar Narayan ,  Satyanarayana Nitta ,  Sampath Purushothaman ,  Robert Rosenberg ,  Christy Tyberg ,  Roy Yu

发明人： Shyng-Tsong Chen ,  Stefanie Chiras ,  Matthew Colburn ,  Tomothy Dalton ,  Jeffrey Hedrick ,  Elbert Huang ,  Kaushik Kumar ,  Michael Lane ,  Kelly Malone ,  Chandrasekhar Narayan ,  Satyanarayana Nitta ,  Sampath Purushothaman ,  Robert Rosenberg ,  Christy Tyberg ,  Roy Yu

IPC分类号： H01L21/4763

CPC分类号： H01L21/7682 ,  H01L21/76829 ,  H01L23/5222 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a multilevel microelectronic integrated circuit, air comprises permanent line level dielectric and ultra low-K materials are via level dielectric. The air is supplied to line level subsequent to removal of sacrificial material by clean thermal decomposition and assisted diffusion of byproducts through porosities in the IC structure. Optionally, air is also included within porosities in the via level dielectric. By incorporating air to the extent produced in the invention, intralevel and interlevel dielectric values are minimized.

摘要翻译： 在多电平微电子集成电路中，空气包括永久线路电介质，超低K材料通过电介质。 在通过清洁热分解除去牺牲材料并通过IC结构中的孔隙率辅助副产物扩散后，将空气供应到线路电平。 任选地，空气也包括在通孔级电介质中的孔隙中。 通过将空气结合到本发明产生的程度，使层内和层间介电值最小化。

公开(公告)号：US20060103023A1

公开(公告)日：2006-05-18

申请号：US10988484

申请日：2004-11-12

申请人： Azeez Bhavnagarwala ,  Stephen Kosonocky ,  Satyanarayana Nitta ,  Sampath Purushothaman

发明人： Azeez Bhavnagarwala ,  Stephen Kosonocky ,  Satyanarayana Nitta ,  Sampath Purushothaman

IPC分类号： H01L21/4763 ,  H01L23/48

CPC分类号： H01L21/76801 ,  G11C11/412 ,  H01L23/53295 ,  H01L27/11 ,  H01L27/1104 ,  H01L2924/0002 ,  H01L2924/00

摘要： A hybrid interconnect structure that possesses a higher interconnect capacitance in one set of regions than in other regions on the same microelectronic chip is described. Several methods to fabricate such a structure are provided. Circuit implementations of such hybrid interconnect structures are described that enable increased static noise margin and reduce the leakage in SRAM cells and common power supply voltages for SRAM and logic in such a chip. Methods that enable combining these circuit benefits with higher interconnect performance speed and superior mechanical robustness in such chips are also taught.

摘要翻译： 描述了在一组区域中具有比在同一微电子芯片上的其它区域更高的互连电容的混合互连结构。 提供了几种制造这种结构的方法。 描述了这样的混合互连结构的电路实现，其能够增加静态噪声容限并且减少SRAM单元中的泄漏以及用于这种芯片中的SRAM和逻辑的公共电源电压。 还教导了能够将这些电路优点与更高的互连性能速度和优异的机械鲁棒性相结合的方法。

公开(公告)号：US20050272341A1

公开(公告)日：2005-12-08

申请号：US11150059

申请日：2005-06-10

申请人： Matthew Colburn ,  Satyanarayana Nitta ,  Sampath Purushothaman

发明人： Matthew Colburn ,  Satyanarayana Nitta ,  Sampath Purushothaman

IPC分类号： H01J9/14 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/48 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L29/06 ,  H01L29/40

CPC分类号： H01L21/7682 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a low k, ultra-low k, and extreme-low k multilayer interconnect structure on a substrate in which the interconnect line features are separated laterally by a dielectric with vertically oriented nano-scale voids formed by perforating it using sub-optical lithography patterning and etching techniques and closing off the tops of the perforations by a dielectric deposition step. The lines are supported either by solid or patterned dielectric features underneath. The method avoids the issues associated with the formation of air gaps after the fabrication of conductor patterns and those associated with the integration of conventional low k, ultra-low k and extreme low k dielectrics which have porosity present before the formation of the interconnect patterns.

摘要翻译： 一种用于在衬底上制造低k，超低k和极低k多层互连结构的方法，其中互连线特征由具有垂直取向的纳米级空隙的电介质侧向分开， 光刻图案和蚀刻技术，并通过介电沉积步骤封闭穿孔的顶部。 线路由固体或图案化的电介质特征支撑。 该方法避免了在形成导体图案之后与形成气隙相关的问题，以及与形成互连图案之前具有孔隙率的常规低k，超低k和极低k电介质的集成相关联的问题。

公开(公告)号：US20070161226A1

公开(公告)日：2007-07-12

申请号：US11328981

申请日：2006-01-10

申请人： Timothy Dalton ,  Nicholas Fuller ,  Satyanarayana Nitta

发明人： Timothy Dalton ,  Nicholas Fuller ,  Satyanarayana Nitta

IPC分类号： H01L21/4763

CPC分类号： H01L21/76801 ,  H01L21/76808 ,  H01L21/76829

摘要： Interconnect structures possessing an organosilicate glass interlayer dielectric material with minimal stoichiometeric modification and optionally an intact organic adhesion promoter for use in semiconductor devices are provided herein. The interconnect structure is capable of delivering improved device performance, functionality and reliability owing to the reduced effective dielectric constant of the stack compared with that of those conventionally employed because of the use of a sacrificial polymeric material deposited onto the dielectric and optional organic adhesion promoter during the barrier open step done prior to ashing the patterning material. This sacrificial film protects the dielectric and optional organic adhesion promoter from modification/consumption during the subsequent ashing step during which the polymeric film is removed.

摘要翻译： 本文提供了具有最小化学计量变化的有机硅酸盐玻璃层间介电材料和任选的用于半导体器件的完整有机粘合促进剂的互连结构。 互连结构能够提供改进的器件性能，功能性和可靠性，因为与常规使用的那些相比，堆叠的有效介电常数降低，因为使用沉积在电介质上的牺牲聚合物材料和任选的有机粘合促进剂 在灰化图案材料之前完成的阻挡层开口步骤。 该牺牲膜在后续的灰化步骤期间保护电介质和任选的有机粘合促进剂免于修饰/消耗，在此期间除去聚合物膜。