公开(公告)号：US5747796A

公开(公告)日：1998-05-05

申请号：US677141

申请日：1996-07-09

申请人： David Heard ,  Noboru Ohtani ,  Yutaka Unuma ,  Manabu Fujimoto

发明人： David Heard ,  Noboru Ohtani ,  Yutaka Unuma ,  Manabu Fujimoto

IPC分类号： G02B6/06 ,  G02B6/122 ,  H04N1/031 ,  H01J5/16

CPC分类号： H04N1/1936 ,  G02B6/06 ,  G02B6/1221 ,  H04N1/0311

摘要： A waveguide type reduction type image sensor has a waveguide type light source having a light emitting element and a substrate including optical waveguides having a planar waveguide and a tapered waveguide. The waveguide type reduction type image sensor also has a light detecting section having a microlens array, an optical waveguide substrate and a CCD array. The microlens array converges reflected light from an original onto the incident face of the optical waveguide substrate. The optical waveguide substrate has L-shaped optical waveguides for guiding the converged light to the CCD array located on a substrate face perpendicular to the incident face. The CCD array converts the guided light to an electric signal and outputs this electric signal. A manufacturing method of this waveguide type reduction type image sensor is also shown.

摘要翻译： 波导型还原型图像传感器具有具有发光元件的波导型光源和包括具有平面波导和锥形波导的光波导的基板。 波导型还原型图像传感器还具有具有微透镜阵列的光检测部，光波导基板和CCD阵列。 微透镜阵列将来自原稿的反射光会聚到光波导基板的入射面上。 光波导基板具有用于将会聚的光引导到位于垂直于入射面的基板面上的CCD阵列的L形光波导。 CCD阵列将导向的光转换成电信号并输出​​该电信号。 还示出了该波导型还原型图像传感器的制造方法。

公开(公告)号：US09915011B2

公开(公告)日：2018-03-13

申请号：US12592747

申请日：2009-12-01

申请人： Tatsuo Fujimoto ,  Noboru Ohtani ,  Masakazu Katsuno ,  Masashi Nakabayashi ,  Hirokatsu Yashiro

发明人： Tatsuo Fujimoto ,  Noboru Ohtani ,  Masakazu Katsuno ,  Masashi Nakabayashi ,  Hirokatsu Yashiro

IPC分类号： B32B5/00 ,  C30B29/36 ,  C30B23/00 ,  C30B25/02 ,  C30B29/40 ,  C30B33/02

CPC分类号： C30B29/36 ,  C30B23/00 ,  C30B25/02 ,  C30B29/403 ,  C30B33/02 ,  Y10T428/24355

摘要： The invention provides a low resistivity silicon carbide single crystal wafer for fabricating semiconductor devices having excellent characteristics. The low resistivity silicon carbide single crystal wafer has a specific volume resistance of 0.001 Ωcm to 0.012 Ωcm and 90% or greater of the entire wafer surface area is covered by an SiC single crystal surface of a roughness (Ra) of 1.0 nm or less.

公开(公告)号：US08795624B2

公开(公告)日：2014-08-05

申请号：US11663887

申请日：2005-10-05

申请人： Masashi Nakabayashi ,  Tatsuo Fujimoto ,  Mitsuru Sawamura ,  Noboru Ohtani

发明人： Masashi Nakabayashi ,  Tatsuo Fujimoto ,  Mitsuru Sawamura ,  Noboru Ohtani

IPC分类号： C01B31/36 ,  H01L21/00 ,  B01J3/04 ,  H01B1/04 ,  H01B1/00 ,  H01L29/16 ,  H01L21/02 ,  C30B13/00 ,  C30B21/04 ,  C30B28/08

CPC分类号： H01B1/04 ,  C30B13/00 ,  C30B21/04 ,  C30B23/00 ,  C30B28/08 ,  C30B29/36 ,  H01B1/00 ,  H01L21/02378 ,  H01L21/02529 ,  H01L29/1608 ,  Y10S438/931

摘要： Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.

摘要翻译： 提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度是掺杂剂元素的最小浓度的50倍或更小。 还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 3Ω·cm以上。 还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。 升华材料包括含有掺杂剂元素的固体材料，并且含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。

公开(公告)号：US20070262322A1

公开(公告)日：2007-11-15

申请号：US11663887

申请日：2005-10-05

申请人： Masashi Nakabayashi ,  Tatsuo Fujimoto ,  Mitsuru Sawamura ,  Noboru Ohtani

发明人： Masashi Nakabayashi ,  Tatsuo Fujimoto ,  Mitsuru Sawamura ,  Noboru Ohtani

IPC分类号： C30B23/00 ,  H01L29/15

CPC分类号： H01B1/04 ,  C30B13/00 ,  C30B21/04 ,  C30B23/00 ,  C30B28/08 ,  C30B29/36 ,  H01B1/00 ,  H01L21/02378 ,  H01L21/02529 ,  H01L29/1608 ,  Y10S438/931

摘要： Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.

摘要翻译： 提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度为50倍 或小于掺杂剂元素的最小浓度。 还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 -3Ω以上。 还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。 升华材料包括含有掺杂剂元素的固体材料，含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。

公开(公告)号：US5856242A

公开(公告)日：1999-01-05

申请号：US672233

申请日：1996-06-27

申请人： Hisako Arai ,  Ryusuke Kita ,  Yoshiyuki Masuda ,  Noboru Ohtani ,  Yoshiyuki Matsu ,  Masayoshi Koba

发明人： Hisako Arai ,  Ryusuke Kita ,  Yoshiyuki Masuda ,  Noboru Ohtani ,  Yoshiyuki Matsu ,  Masayoshi Koba

IPC分类号： C04B35/46 ,  C01B13/14 ,  C23C14/08 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  C23C14/58 ,  H01L21/283 ,  H01L21/31

CPC分类号： C23C14/5806 ,  C23C14/088 ,  C23C14/5853

摘要： A method for preparing an oxide dielectric thin film, for use in a dielectric thin film device, is described. Briefly, a film forming chamber is heated, and a thin film of dielectric, about 200 nm thick, is formed by sputtering or another deposition method. After the film is formed, evacuation of the film forming chamber is suspended, and oxygen gas is introduced into the chamber. The film is oxidized after its formation by maintaining the film in the oxygen atmosphere for a period of time, which can include cooling steps. The resulting dielectric thin film has excellent dielectric properties, such as a high dielectric constant and great dielectric strength.

摘要翻译： 描述了用于制造用于电介质薄膜器件的氧化物电介质薄膜的方法。 简而言之，加热成膜室，通过溅射或其它沉积方法形成约200nm厚的电介质薄膜。 在形成膜之后，将成膜室抽真空，并将氧气引入室中。 通过将膜在氧气氛中保持一段时间，其形成后膜被氧化，这可以包括冷却步骤。 所得的电介质薄膜具有优良的介电特性，例如介电常数高，介电强度大。

公开(公告)号：US09029219B2

公开(公告)日：2015-05-12

申请号：US14240710

申请日：2012-08-24

申请人： Tadaaki Kaneko ,  Noboru Ohtani ,  Shoji Ushio ,  Ayumu Adachi ,  Satoru Nogami

发明人： Tadaaki Kaneko ,  Noboru Ohtani ,  Shoji Ushio ,  Ayumu Adachi ,  Satoru Nogami

IPC分类号： H01L21/02 ,  C30B19/04 ,  C30B29/36 ,  H01L21/67 ,  C30B19/12 ,  H01L29/16

CPC分类号： H01L21/02664 ,  C30B19/04 ,  C30B19/12 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/02625 ,  H01L21/02658 ,  H01L21/67109 ,  H01L29/1608

摘要： A method for manufacturing a semiconductor wafer includes a carbon layer formation step, a through hole formation step, a feed layer formation step, and an epitaxial layer formation step. In the carbon layer formation step, a carbon layer (71) is formed on a surface of a substrate (70) made of polycrystalline SiC. In the through hole formation step, through holes (71c) are formed in the carbon layer (71) formed on the substrate (70). In the feed layer formation step, a Si layer (72) and a 3C—SiC polycrystalline layer (73) are formed on a surface of the carbon layer (71). In the epitaxial layer formation step, the substrate (70) is heated so that a seed crystal made of 4H—SiC single crystal is formed on portions of the surface of the substrate (70) that are exposed through the through holes (71c), and a close-spaced liquid-phase epitaxial growth of the seed crystal is caused to form a 4H—SiC single crystal layer.

摘要翻译： 制造半导体晶片的方法包括碳层形成步骤，通孔形成步骤，进料层形成步骤和外延层形成步骤。 在碳层形成工序中，在由多晶SiC构成的基板（70）的表面上形成碳层（71）。 在通孔形成工序中，在形成于基板（70）上的碳层（71）上形成通孔（71c）。 在进料层形成步骤中，在碳层（71）的表面上形成Si层（72）和3C-SiC多晶层（73）。 在外延层形成步骤中，加热衬底（70），使得在通过通孔（71c）暴露的衬底（70）的表面的部分上形成由4H-SiC单晶制成的晶种， 并且引起晶种的紧密间隔的液相外延生长形成4H-SiC单晶层。

公开(公告)号：US08889570B2

公开(公告)日：2014-11-18

申请号：US12529023

申请日：2008-03-11

申请人： Takatoshi Matsumura ,  Noboru Ohtani ,  Yoshiyuki Masuda ,  Masahiko Ishikawa ,  Yoshiya Kimura ,  Kyoko Nishizaki ,  Yoshitaka Masuda

发明人： Takatoshi Matsumura ,  Noboru Ohtani ,  Yoshiyuki Masuda ,  Masahiko Ishikawa ,  Yoshiya Kimura ,  Kyoko Nishizaki ,  Yoshitaka Masuda

IPC分类号： D03D9/00 ,  D03D15/00 ,  D03D19/00 ,  D04H13/00 ,  H05K9/00 ,  C08G18/77 ,  C09J167/07 ,  C09J133/26 ,  C08F265/04 ,  B32B27/08 ,  C08F290/06 ,  C08F265/06 ,  C09J175/04 ,  C09J4/06 ,  C09J151/00 ,  C08K5/5435 ,  C08K5/521

CPC分类号： C09J4/06 ,  B32B27/08 ,  B32B27/12 ,  B32B27/32 ,  B32B27/36 ,  B32B27/365 ,  B32B2262/103 ,  B32B2307/202 ,  B32B2307/212 ,  B32B2307/412 ,  B32B2307/416 ,  B32B2307/712 ,  B32B2307/7265 ,  B32B2457/20 ,  B32B2605/08 ,  C08F265/04 ,  C08F265/06 ,  C08F290/06 ,  C08F290/061 ,  C08K5/521 ,  C08K5/5435 ,  C08L2312/08 ,  C08L2666/02 ,  C09J133/26 ,  C09J151/003 ,  C09J167/07 ,  C09J175/04 ,  H05K9/0096 ,  Y10T442/109 ,  Y10T442/188

摘要： Disclosed is a light-transmitting electromagnetic-shielding laminate, which is characterized in that two or more layers including an electromagnetic-shielding layer are arranged in layers using a (meth)acrylate adhesive composition which contains a (meth)acrylate monomer, a (meth)acrylate oligomer and at least one member selected from the group consisting of acrylic amide derivatives, silane compounds and organophosphorus compounds. Also disclosed is a light-transmitting radio wave absorber which is characterized in that a resistive layer, a dielectric spacer and a reflective layer are arranged in layers using a (meth)acrylate adhesive composition which contains a (meth)acrylate monomer, a (meth)acrylate oligomer and at least one member selected from the group consisting of acrylic amide derivatives, silane compounds and organophosphorus compounds.

摘要翻译： 本发明公开了一种透光电磁屏蔽叠层体，其特征在于，使用含（甲基）丙烯酸酯单体的（甲基）丙烯酸酯单体，（甲基）丙烯酸酯单体，（甲基）丙烯酸酯单体， ）丙烯酸酯低聚物和选自丙烯酰胺衍生物，硅烷化合物和有机磷化合物中的至少一种。 还公开了一种透光电波吸收体，其特征在于，使用含（甲基）丙烯酸酯单体的（甲基）丙烯酸酯单体，（甲基）丙烯酸酯单体，（甲基）丙烯酸酯单体， ）丙烯酸酯低聚物和选自丙烯酰胺衍生物，硅烷化合物和有机磷化合物中的至少一种。

公开(公告)号：US08673254B2

公开(公告)日：2014-03-18

申请号：US13040783

申请日：2011-03-04

申请人： Masashi Nakabayashi ,  Tatsuo Fujimoto ,  Mitsuru Sawamura ,  Noboru Ohtani

发明人： Masashi Nakabayashi ,  Tatsuo Fujimoto ,  Mitsuru Sawamura ,  Noboru Ohtani

IPC分类号： C30B29/36

CPC分类号： H01B1/04 ,  C30B13/00 ,  C30B21/04 ,  C30B23/00 ,  C30B28/08 ,  C30B29/36 ,  H01B1/00 ,  H01L21/02378 ,  H01L21/02529 ,  H01L29/1608 ,  Y10S438/931

摘要： Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.

摘要翻译： 提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度是掺杂剂元素的最小浓度的50倍或更小。 还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 3Ω·cm以上。 还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。 升华材料包括含有掺杂剂元素的固体材料，并且含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。

公开(公告)号：US07972704B2

公开(公告)日：2011-07-05

申请号：US12735405

申请日：2009-01-14

申请人： Noboru Ohtani ,  Masakazu Katsuno ,  Hiroshi Tsuge ,  Masashi Nakabayashi ,  Tatsuo Fujimoto

发明人： Noboru Ohtani ,  Masakazu Katsuno ,  Hiroshi Tsuge ,  Masashi Nakabayashi ,  Tatsuo Fujimoto

IPC分类号： B32B9/04

CPC分类号： H01L21/0262 ,  C30B23/00 ,  C30B23/002 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02634 ,  H01L21/046 ,  H01L21/0495 ,  H01L29/6606 ,  Y10T428/24355

摘要： The present invention provides a single-crystal silicon carbide ingot capable of providing a good-quality substrate low in dislocation defects, and a substrate and epitaxial wafer obtained therefrom.It is a single-crystal silicon carbide ingot comprising single-crystal silicon carbide which contains donor-type impurity at a concentration of 2×1018 cm−3 to 6×1020 cm−3 and acceptor-type impurity at a concentration of 1×1018 cm−3 to 5.99×1020 cm−3 and wherein the concentration of the donor-type impurity is greater than the concentration of the acceptor-type impurity and the difference is 1×1018 cm−3 to 5.99×1020 cm−3, and a substrate and epitaxial wafer obtained therefrom.

摘要翻译： 本发明提供能够提供低位错缺陷的优质基板的单晶碳化硅锭，以及从其获得的基板和外延晶片。 是含有浓度为2×1018 cm -3〜6×1020cm-3的供体型杂质和1×1018浓度的受主型杂质的单晶碳化硅单晶碳化硅锭 cm-3〜5.99×1020cm-3，其中施主型杂质的浓度大于受主型杂质的浓度，差为1×1018cm-3〜5.99×1020cm-3， 从其获得的基板和外延晶片。

公开(公告)号：US07794842B2

公开(公告)日：2010-09-14

申请号：US10589680

申请日：2004-12-27

申请人： Masashi Nakabayashi ,  Tatsuo Fujimoto ,  Mitsuru Sawamura ,  Noboru Ohtani

发明人： Masashi Nakabayashi ,  Tatsuo Fujimoto ,  Mitsuru Sawamura ,  Noboru Ohtani

IPC分类号： B32B9/04 ,  B32B13/04 ,  B32B9/00 ,  B32B19/00 ,  C04B35/52 ,  C04B35/56

CPC分类号： C30B29/36 ,  C30B23/00

摘要： The present invention provides a high resistivity, high quality, large size SiC single crystal, SiC single crystal wafer, and method of production of the same, that is, a silicon carbide single crystal containing uncompensated impurities in an atomic number density of 1 ×1015/cm3 or more and containing vanadium in an amount less than said uncompensated impurity concentration, silicon carbide single crystal wafer obtained by processing and polishing the silicon carbide single crystal and having an electrical resistivity at room temperature of 5×103 Ωcm or more, and a method of production of a silicon carbide single crystal.

摘要翻译： 本发明提供一种高电阻率，高质量，大尺寸的SiC单晶，SiC单晶晶片及其制造方法，即含有原子序数密度为1×1015的未补偿杂质的碳化硅单晶 / cm3以上，并且含有小于所述未补偿杂质浓度的钒，通过在室温下加工和研磨碳化硅单晶而获得的电阻率为5×10 3Ω·cm以上的碳化硅单晶晶片， 以及碳化硅单晶的制造方法。