公开(公告)号：US20110233777A1

公开(公告)日：2011-09-29

申请号：US13154550

申请日：2011-06-07

申请人： Salman Akram ,  Charles Watkins ,  Mark Hiatt ,  David Hembree ,  James Wark ,  Warren Farnworth ,  Mark Tuttle ,  Sidney Rigg ,  Steven Oliver ,  Kyle Kirby ,  Alan Wood ,  Lu Velicky

发明人： Salman Akram ,  Charles Watkins ,  Mark Hiatt ,  David Hembree ,  James Wark ,  Warren Farnworth ,  Mark Tuttle ,  Sidney Rigg ,  Steven Oliver ,  Kyle Kirby ,  Alan Wood ,  Lu Velicky

IPC分类号： H01L23/498 ,  H01L23/48

CPC分类号： H01L21/76877 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/45 ,  H01L27/14634 ,  H01L27/14636 ,  H01L2221/6834 ,  H01L2224/02166 ,  H01L2224/0554 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A through-wafer interconnect for imager, memory and other integrated circuit applications is disclosed, thereby eliminating the need for wire bonding, making devices incorporating such interconnects stackable and enabling wafer level packaging for imager devices. Further, a smaller and more reliable die package is achieved and circuit parasitics (e.g., L and R) are reduced due to the reduced signal path lengths.

摘要翻译： 公开了一种用于成像器，存储器和其他集成电路应用的透晶片互连，从而消除了对引线接合的需要，使得结合这种互连的器件可堆叠并且实现成像器件的晶片级封装。 此外，实现了更小且更可靠的管芯封装，并且由于信号路径长度的减小，电路寄生（例如，L和R）被减小。

公开(公告)号：US20060008739A1

公开(公告)日：2006-01-12

申请号：US11216938

申请日：2005-08-31

申请人： Alan Wood ,  Warren Farnworth ,  David Hembree ,  Sidney Rigg ,  William Hiatt ,  Peter Benson ,  Kyle Kirby ,  Salman Akram

发明人： Alan Wood ,  Warren Farnworth ,  David Hembree ,  Sidney Rigg ,  William Hiatt ,  Peter Benson ,  Kyle Kirby ,  Salman Akram

IPC分类号： G03C1/00

CPC分类号： G03F7/0037 ,  B33Y30/00 ,  B33Y70/00 ,  B33Y80/00 ,  G03F7/0047

摘要： Materials for use in programmed material consolidation processes, such as stereolithography, include a selectively consolidatable material and a filler. The filler may be included to optimize one or more physical properties of the material. The material is both selectively consolidatable and includes the desired physical property. Examples of physical properties that may optimized in a selectively consolidatable compound by mixing a filler material with a selectively consolidatable material include, without limitation, coefficient of thermal expansion, rigidity, fracture toughness, thermal stability, and strength.

摘要翻译： 用于程序化材料固结方法（例如立体光刻）的材料包括可选择的可固结材料和填料。 可以包括填料以优化材料的一种或多种物理性质。 该材料既可选择性地整合，并且包括所需的物理性质。 通过将填充材料与可选择性地可固结的材料混合可以在可选择地可固化的化合物中优化的物理性质的实例包括但不限于热膨胀系数，刚性，断裂韧性，热稳定性和强度。

公开(公告)号：US20060003569A1

公开(公告)日：2006-01-05

申请号：US11210606

申请日：2005-08-23

申请人： Warren Farnworth ,  Alan Wood ,  James Wark ,  David Hembree ,  Syed Ahmad ,  Michael Hess ,  John Jacobson

发明人： Warren Farnworth ,  Alan Wood ,  James Wark ,  David Hembree ,  Syed Ahmad ,  Michael Hess ,  John Jacobson

IPC分类号： H01L21/44

CPC分类号： H01L23/544 ,  B33Y30/00 ,  B33Y80/00 ,  H01L21/563 ,  H01L23/293 ,  H01L23/3157 ,  H01L24/81 ,  H01L24/83 ,  H01L2223/5448 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/11005 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/16 ,  H01L2224/293 ,  H01L2224/81011 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83851 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/05599

摘要： Methods of manufacturing semiconductor devices using permanent or temporary polymer layers having apertures to expose contact pads and cover the active surfaces of the semiconductor devices.

公开(公告)号：US20060003255A1

公开(公告)日：2006-01-05

申请号：US11216599

申请日：2005-08-31

申请人： Alan Wood ,  Warren Farnworth ,  David Hembree ,  Sidney Rigg ,  William Hiatt ,  Peter Benson ,  Kyle Kirby ,  Salman Akram

发明人： Alan Wood ,  Warren Farnworth ,  David Hembree ,  Sidney Rigg ,  William Hiatt ,  Peter Benson ,  Kyle Kirby ,  Salman Akram

IPC分类号： G03C1/492

CPC分类号： G03F7/0037 ,  B33Y30/00 ,  B33Y70/00 ,  B33Y80/00 ,  G03F7/0047

摘要： Methods for optimizing physical properties of selectively consolidatable materials, such as photoimageable materials, include mixing filler materials with the selectively consolidatable materials. The resulting compound has the desired physical property, as well as selective consolidatability. Examples of physical properties that may optimized in a selectively consolidatable compound by mixing a filler material with a selectively consolidatable material include, without limitation, coefficient of thermal expansion, rigidity, fracture toughness, thermal stability, and strength.

摘要翻译： 用于优化选择性可固结材料（例如可光成像材料）的物理性质的方法包括将填料与可选择的可固结材料混合。 所得化合物具有所需的物理性质以及选择性的可固化性。 通过将填充材料与可选择性地可固结的材料混合可以在可选择地可固化的化合物中优化的物理性质的实例包括但不限于热膨胀系数，刚性，断裂韧性，热稳定性和强度。

公开(公告)号：US20060001139A1

公开(公告)日：2006-01-05

申请号：US11216617

申请日：2005-08-31

申请人： Alan Wood ,  Warren Farnworth ,  David Hembree ,  Sidney Rigg ,  William Hiatt ,  Peter Benson ,  Kyle Kirby ,  Salman Akram

发明人： Alan Wood ,  Warren Farnworth ,  David Hembree ,  Sidney Rigg ,  William Hiatt ,  Peter Benson ,  Kyle Kirby ,  Salman Akram

IPC分类号： H01L23/02

CPC分类号： G03F7/0037 ,  B33Y30/00 ,  B33Y70/00 ,  B33Y80/00 ,  G03F7/0047

摘要： A support structure for use with a semiconductor substrate in thinning, or backgrinding, thereof, as well as during post-thinning processing of the semiconductor substrate includes a portion which extends substantially along and around an outer periphery of the semiconductor substrate to impart the thinned semiconductor substrate with rigidity. The support structure may be configured as a ring or as a member which substantially covers an active surface of the semiconductor substrate and forms a protective structure over each semiconductor device carried by the active surface.

摘要翻译： 在半导体衬底的薄化或后研磨以及后稀化处理期间与半导体衬底一起使用的支撑结构包括基本上沿半导体衬底的外周延伸并且围绕半导体衬底的外周延伸的部分，以使薄化半导体 基板具有刚性。 支撑结构可以被配置为环或作为基本上覆盖半导体衬底的有源表面并且在由有源表面承载的每个半导体器件上形成保护结构的构件。

公开(公告)号：US20050233482A1

公开(公告)日：2005-10-20

申请号：US11152433

申请日：2005-06-14

申请人： Kyle Kirby ,  Warren Farnworth ,  James Wark ,  William Hiatt ,  David Hembree ,  Alan Wood

发明人： Kyle Kirby ,  Warren Farnworth ,  James Wark ,  William Hiatt ,  David Hembree ,  Alan Wood

IPC分类号： G01R1/073 ,  H01L21/66 ,  H01L23/48 ,  H01L23/498 ,  H01L23/58 ,  H01R13/24 ,  H05K3/32 ,  H05K3/40 ,  H05K7/06 ,  H05K7/10

CPC分类号： G01R1/0735 ,  G01R1/07314 ,  H01L23/13 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2924/00014 ,  H01L2924/09701 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01R12/714 ,  H01R13/24 ,  H01R2201/20 ,  H05K3/326 ,  H05K7/1069 ,  H05K2201/0314 ,  H05K2201/09036 ,  H05K2201/10378 ,  Y10T29/49165 ,  Y10T29/49174 ,  Y10T29/49204 ,  Y10T29/49222 ,  H01L2224/05599

摘要： A compliant contact pin contactor card method for making is provided. A compliant contact pin assembly includes a contact pin formed from a portion of a substrate with the contact pin compliantly held suspended within the substrate by a compliant coupling structure. The suspension within the substrate results in a compliant deflection orthogonal to the plane of the substrate. The contact pin assembly is formed by generally thinning the substrate around the contact pin location and then specifically thinning the substrate immediately around the contact pin location for forming a void. The contact pin is compliantly coupled, in one embodiment by compliant coupling material, and in another embodiment by compliantly flexible portions of the substrate.

摘要翻译： 提供一种兼容的接触针接触器卡制造方法。 柔性接触销组件包括由衬底的一部分形成的接触针，其中触发销通过柔性耦合结构顺应地保持悬挂在衬底内。 衬底内的悬浮液导致与衬底的平面垂直的柔顺偏转。 接触销组件通过使基板围绕接触销位置大体变薄而形成，然后特别地使基板在接触销位置周围特别地变薄以形成空隙。 在一个实施例中，接触销被顺从地联接，在一个实施例中通过柔性耦合材料，并且在另一个实施例中，通过柔性柔性部分的衬底。

公开(公告)号：US20050206012A1

公开(公告)日：2005-09-22

申请号：US10801205

申请日：2004-03-16

申请人： Warren Farnworth ,  William Hiatt ,  Tim Murphy ,  John Caldwell ,  Michael Slaughter ,  David Hembree ,  Jamie Wanke

发明人： Warren Farnworth ,  William Hiatt ,  Tim Murphy ,  John Caldwell ,  Michael Slaughter ,  David Hembree ,  Jamie Wanke

IPC分类号： H01L21/56 ,  H01L23/48 ,  H01L23/485

CPC分类号： H01L24/06 ,  H01L21/563 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/73203 ,  H01L2224/73257 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10162 ,  H01L2224/45099

摘要： Stress and force management techniques for a semiconductor die to help compensate for stress within the semiconductor die and to help compensate for forces applied to the semiconductor die to minimize damage thereto.

摘要翻译： 用于半导体管芯的应力和力管理技术来帮助补偿半导体管芯内的应力，并帮助补偿施加到半导体管芯上的力以最小化对其的损害。

公开(公告)号：US20050064681A1

公开(公告)日：2005-03-24

申请号：US10666742

申请日：2003-09-19

申请人： Alan Wood ,  Warren Farnworth ,  David Hembree ,  Sidney Rigg ,  William Hiatt ,  Peter Benson ,  Kyle Kirby ,  Salman Akram

发明人： Alan Wood ,  Warren Farnworth ,  David Hembree ,  Sidney Rigg ,  William Hiatt ,  Peter Benson ,  Kyle Kirby ,  Salman Akram

IPC分类号： E21B43/02 ,  G03F7/00 ,  G03F7/004 ,  H01L21/30 ,  H01L21/46

CPC分类号： G03F7/0037 ,  B33Y30/00 ,  B33Y70/00 ,  B33Y80/00 ,  G03F7/0047

摘要： A support structure for use with a semiconductor substrate in thinning, or backgrinding, thereof, as well as during post-thinning processing of the semiconductor substrate includes a portion which extends substantially along and around an outer periphery of the semiconductor substrate to impart the thinned semiconductor substrate with rigidity. The support structure may be configured as a ring or as a member which substantially covers an active surface of the semiconductor substrate and forms a protective structure over each semiconductor device carried by the active surface. Assemblies that include the support structure and a semiconductor substrate are also within the scope of the present invention, as are methods for forming the support structures and thinning and post-thinning processes that include use of the support structures.

摘要翻译： 在半导体衬底的薄化或后研磨以及后稀化处理期间与半导体衬底一起使用的支撑结构包括基本上沿半导体衬底的外周延伸并且围绕半导体衬底的外周延伸的部分，以使薄化半导体 基板具有刚性。 支撑结构可以被配置为环或作为基本上覆盖半导体衬底的有源表面并且在由有源表面承载的每个半导体器件上形成保护结构的构件。 包括支撑结构和半导体衬底的组件也在本发明的范围内，形成支撑结构的方法和包括使用支撑结构的减薄和后变薄工艺也是如此。

公开(公告)号：US20070170350A1

公开(公告)日：2007-07-26

申请号：US11727545

申请日：2007-03-27

申请人： Warren Farnworth ,  Sidney Rigg ,  William Hiatt ,  Alan Wood ,  Peter Benson ,  James Wark ,  David Hembree ,  Kyle Kirby ,  Charles Watkins ,  Salman Akram

发明人： Warren Farnworth ,  Sidney Rigg ,  William Hiatt ,  Alan Wood ,  Peter Benson ,  James Wark ,  David Hembree ,  Kyle Kirby ,  Charles Watkins ,  Salman Akram

IPC分类号： H01L27/00

CPC分类号： H01L27/00 ,  B33Y80/00 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14683 ,  H01L27/14687 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/00014

摘要： Microelectronic imager assemblies comprising a workpiece including a substrate and a plurality of imaging dies on and/or in the substrate. The substrate includes a front side and a back side, and the imaging dies comprise imaging sensors at the front side of the substrate and external contacts operatively coupled to the image sensors. The microelectronic imager assembly further comprises optics supports superimposed relative to the imaging dies. The optics supports can be directly on the substrate or on a cover over the substrate. Individual optics supports can have (a) an opening aligned with one of the image sensors, and (b) a bearing element at a reference distance from the image sensor. The microelectronic imager assembly can further include optical devices mounted or otherwise carried by the optics supports.

公开(公告)号：US20070018336A1

公开(公告)日：2007-01-25

申请号：US11516097

申请日：2006-09-05

申请人： Warren Farnworth ,  William Hiatt ,  Tim Murphy ,  John Caldwell ,  Michael Slaughter ,  David Hembree ,  Jamie Wanke

发明人： Warren Farnworth ,  William Hiatt ,  Tim Murphy ,  John Caldwell ,  Michael Slaughter ,  David Hembree ,  Jamie Wanke

IPC分类号： H01L23/48

CPC分类号： H01L24/06 ,  H01L21/563 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/73203 ,  H01L2224/73257 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10162 ,  H01L2224/45099

摘要： Stress and force management techniques for a semiconductor die to help compensate for stress within the semiconductor die and to help compensate for forces applied to the semiconductor die to minimize damage thereto.

摘要翻译： 用于半导体管芯的应力和力管理技术来帮助补偿半导体管芯内的应力，并帮助补偿施加到半导体管芯上的力以最小化对其的损害。