公开(公告)号：US07365395B2

公开(公告)日：2008-04-29

申请号：US11203432

申请日：2005-08-15

申请人： David P. Stumbo ,  Stephen A. Empedocles ,  Francisco Leon ,  J. Wallace Parce

发明人： David P. Stumbo ,  Stephen A. Empedocles ,  Francisco Leon ,  J. Wallace Parce

IPC分类号： H01L29/72

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  G11C2213/16 ,  G11C2213/81 ,  H01L29/0673 ,  H01L29/4908 ,  H01L51/0537 ,  Y10S977/743 ,  Y10S977/745 ,  Y10S977/762 ,  Y10S977/813 ,  Y10S977/936

摘要： Artificial dielectrics using nanostructures, such as nanowires, are disclosed. In embodiments, artificial dielectrics using other nanostructures, such as nanorods, nanotubes or nanoribbons and the like are disclosed. The artificial dielectric includes a dielectric material with a plurality of nanowires (or other nanostructures) embedded within the dielectric material. Very high dielectric constants can be achieved with an artificial dielectric using nanostructures. The dielectric constant can be adjusted by varying the length, diameter, carrier density, shape, aspect ratio, orientation and density of the nanostructures. Additionally, a controllable artificial dielectric using nanostructures, such as nanowires, is disclosed in which the dielectric constant can be dynamically adjusted by applying an electric field to the controllable artificial dielectric. A wide range of electronic devices can use artificial dielectrics with nanostructures to improve performance. Example devices include, capacitors, thin film transistors, other types of thin film electronic devices, microstrip devices, surface acoustic wave (SAW) filters, other types of filters, and radar attenuating materials (RAM).

摘要翻译： 公开了使用纳米结构的人造电介质，例如纳米线。 在实施例中，公开了使用其他纳米结构的人造电介质，例如纳米棒，纳米管或纳米带等。 人造电介质包括具有嵌入电介质材料内的多个纳米线（或其他纳米结构）的电介质材料。 使用纳米结构的人造电介质可以实现非常高的介电常数。 可以通过改变纳米结构的长度，直径，载流子密度，形状，纵横比，取向和密度来调节介电常数。 此外，公开了使用纳米结构的可控人造电介质，例如纳米线，其中可以通过向可控人造电介质施加电场来动态地调整介电常数。 各种电子器件可以使用具有纳米结构的人造电介质来提高性能。 示例性器件包括电容器，薄膜晶体管，其他类型的薄膜电子器件，微带器件，表面声波（SAW）滤波器，其它类型的滤波器以及雷达衰减材料（RAM）。

公开(公告)号：US07851841B2

公开(公告)日：2010-12-14

申请号：US11760382

申请日：2007-06-08

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen A. Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David P. Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen A. Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David P. Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

IPC分类号： H01L27/108 ,  H01L29/94

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01F1/405 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/781 ,  Y10S977/789 ,  Y10S977/938

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。

公开(公告)号：US07427328B2

公开(公告)日：2008-09-23

申请号：US11602783

申请日：2006-11-21

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen A. Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence A. Bock ,  David P. Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen A. Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence A. Bock ,  David P. Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

IPC分类号： B05C5/00 ,  B05B7/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01F1/405 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/781 ,  Y10S977/789 ,  Y10S977/938

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。

公开(公告)号：US20110284380A1

公开(公告)日：2011-11-24

申请号：US13113680

申请日：2011-05-23

申请人： Samuel MARTIN ,  Xiangfeng Duan ,  Katsumasa Fujii ,  James M. Hamilton ,  Hiroshi Iwata ,  Francisco Leon ,  Jeffrey Miller ,  Tetsu Negishi ,  Hiroshi Ohki ,  J. Wallace Parce ,  Cheri X.Y. Pereira ,  Paul John Schuele ,  Akihide Shibata ,  David P. Stumbo ,  Yasunobu Okada

发明人： Samuel MARTIN ,  Xiangfeng Duan ,  Katsumasa Fujii ,  James M. Hamilton ,  Hiroshi Iwata ,  Francisco Leon ,  Jeffrey Miller ,  Tetsu Negishi ,  Hiroshi Ohki ,  J. Wallace Parce ,  Cheri X.Y. Pereira ,  Paul John Schuele ,  Akihide Shibata ,  David P. Stumbo ,  Yasunobu Okada

IPC分类号： C25D15/00 ,  B82Y30/00

CPC分类号： H01L29/0665 ,  B82B3/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L29/0673 ,  Y10S977/883

摘要： The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.

摘要翻译： 本发明提供了用于纳米线对准和沉积的方法和系统。 使用通电（例如，交流电场）来使纳米线与电极对准和关联。 通过调节激励，纳米线耦合到电极，使得它们在随后的洗涤和干燥步骤期间保持在适当的位置。 本发明还提供了将纳米线从一个衬底转移到另一个衬底以便制备各种器件衬底的方法。 本发明还提供了用于监测和控制在特定电极对上沉积的纳米线的数量的方法，以及用于操纵溶液中的纳米线的方法。

公开(公告)号：US08252164B2

公开(公告)日：2012-08-28

申请号：US13113680

申请日：2011-05-23

申请人： Samuel Martin ,  Xiangfeng Duan ,  Katsumasa Fujii ,  James M. Hamilton ,  Hiroshi Iwata ,  Francisco Leon ,  Jeffrey Miller ,  Tetsu Negishi ,  Hiroshi Ohki ,  J. Wallace Parce ,  Cheri X. Y. Pereira ,  Paul John Schuele ,  Akihide Shibata ,  David P. Stumbo ,  Yasunobu Okada

发明人： Samuel Martin ,  Xiangfeng Duan ,  Katsumasa Fujii ,  James M. Hamilton ,  Hiroshi Iwata ,  Francisco Leon ,  Jeffrey Miller ,  Tetsu Negishi ,  Hiroshi Ohki ,  J. Wallace Parce ,  Cheri X. Y. Pereira ,  Paul John Schuele ,  Akihide Shibata ,  David P. Stumbo ,  Yasunobu Okada

IPC分类号： C25D13/02

CPC分类号： H01L29/0665 ,  B82B3/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L29/0673 ,  Y10S977/883

摘要： The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.

摘要翻译： 本发明提供了用于纳米线对准和沉积的方法和系统。 使用通电（例如，交流电场）来使纳米线与电极对准和关联。 通过调节激励，纳米线耦合到电极，使得它们在随后的洗涤和干燥步骤期间保持在适当的位置。 本发明还提供了将纳米线从一个衬底转移到另一个衬底以便制备各种器件衬底的方法。 本发明还提供了用于监测和控制在特定电极对上沉积的纳米线的数量的方法，以及用于操纵溶液中的纳米线的方法。

公开(公告)号：US07968474B2

公开(公告)日：2011-06-28

申请号：US11979949

申请日：2007-11-09

申请人： Samuel Martin ,  Xiangfeng Duan ,  Katsumasa Fujii ,  James M. Hamilton ,  Hiroshi Iwata ,  Francisco Leon ,  Jeffrey Miller ,  Tetsu Negishi ,  Hiroshi Ohki ,  J. Wallace Parce ,  Cheri X. Y. Pereira ,  Paul John Schuele ,  Akihide Shibata ,  David P. Stumbo ,  Yasunobu Okada

发明人： Samuel Martin ,  Xiangfeng Duan ,  Katsumasa Fujii ,  James M. Hamilton ,  Hiroshi Iwata ,  Francisco Leon ,  Jeffrey Miller ,  Tetsu Negishi ,  Hiroshi Ohki ,  J. Wallace Parce ,  Cheri X. Y. Pereira ,  Paul John Schuele ,  Akihide Shibata ,  David P. Stumbo ,  Yasunobu Okada

IPC分类号： H01L21/71

CPC分类号： H01L29/0665 ,  B82B3/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L29/0673 ,  Y10S977/883

摘要： The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.

摘要翻译： 本发明提供了用于纳米线对准和沉积的方法和系统。 使用通电（例如，交流电场）来使纳米线与电极对准和关联。 通过调节激励，纳米线耦合到电极，使得它们在随后的洗涤和干燥步骤期间保持在适当的位置。 本发明还提供了将纳米线从一个衬底转移到另一个衬底以便制备各种器件衬底的方法。 本发明还提供了用于监测和控制在特定电极对上沉积的纳米线的数量的方法，以及用于操纵溶液中的纳米线的方法。

公开(公告)号：US20080224123A1

公开(公告)日：2008-09-18

申请号：US11979949

申请日：2007-11-09

申请人： Samuel Martin ,  Xiangfeng Duan ,  Katsumasa Fujii ,  James M. Hamilton ,  Hiroshi Iwata ,  Francisco Leon ,  Jeffrey Miller ,  Tetsu Negishi ,  Hiroshi Ohki ,  J. Wallace Parce ,  Cheri X.Y. Pereira ,  Paul John Schuele ,  Akihide Shibata ,  David P. Stumbo ,  Yasunobu Okada

发明人： Samuel Martin ,  Xiangfeng Duan ,  Katsumasa Fujii ,  James M. Hamilton ,  Hiroshi Iwata ,  Francisco Leon ,  Jeffrey Miller ,  Tetsu Negishi ,  Hiroshi Ohki ,  J. Wallace Parce ,  Cheri X.Y. Pereira ,  Paul John Schuele ,  Akihide Shibata ,  David P. Stumbo ,  Yasunobu Okada

IPC分类号： H01L31/00 ,  H01L21/326

CPC分类号： H01L29/0665 ,  B82B3/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L29/0673 ,  Y10S977/883

摘要： The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.

摘要翻译： 本发明提供了用于纳米线对准和沉积的方法和系统。 使用通电（例如，交流电场）来使纳米线与电极对准和关联。 通过调节激励，纳米线耦合到电极，使得它们在随后的洗涤和干燥步骤期间保持在适当的位置。 本发明还提供了将纳米线从一个衬底转移到另一个衬底以便制备各种器件衬底的方法。 本发明还提供了用于监测和控制在特定电极对上沉积的纳米线的数量的方法，以及用于操纵溶液中的纳米线的方法。

公开(公告)号：US07468315B2

公开(公告)日：2008-12-23

申请号：US11225951

申请日：2005-09-14

申请人： Mihai A. Buretea ,  Jian Chen ,  Calvin Y. H. Chow ,  Chunming Niu ,  Yaoling Pan ,  J. Wallace Parce ,  Linda T. Romano ,  David P. Stumbo

发明人： Mihai A. Buretea ,  Jian Chen ,  Calvin Y. H. Chow ,  Chunming Niu ,  Yaoling Pan ,  J. Wallace Parce ,  Linda T. Romano ,  David P. Stumbo

IPC分类号： H01L21/28 ,  H01L21/3205

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78681 ,  H01L29/78696 ,  H01L33/06 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0545 ,  H01L2924/0002 ,  Y10T428/2913 ,  H01L2924/00

摘要： The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally includes separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into an electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.

摘要翻译： 本发明涉及纳米线材料复合体的制造方法和制造方法。 提供了具有连接到至少一个表面的一部分的纳米线的衬底。 在该部分上沉积材料以形成纳米线材料复合材料。 该方法进一步可选地包括从衬底分离纳米线材料复合物以形成独立的纳米线材料复合材料。 独立的纳米线材料复合材料任选进一步加工成电子基片。 可以使用本文所述的方法来生产各种电子基板。 例如，多个发光二极管可以由多个层叠的纳米线材料复合体制成，每个复合层发射不同波长的光。

公开(公告)号：US07795125B2

公开(公告)日：2010-09-14

申请号：US12274904

申请日：2008-11-20

申请人： Mihai A. Buretea ,  Jian Chen ,  Calvin Y. H. Chow ,  Chunming Niu ,  Yaoling Pan ,  J. Wallace Parce ,  Linda T. Romano ,  David P. Stumbo

发明人： Mihai A. Buretea ,  Jian Chen ,  Calvin Y. H. Chow ,  Chunming Niu ,  Yaoling Pan ,  J. Wallace Parce ,  Linda T. Romano ,  David P. Stumbo

IPC分类号： H01L21/28 ,  H01L21/3205

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78681 ,  H01L29/78696 ,  H01L33/06 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0545 ,  H01L2924/0002 ,  Y10T428/2913 ,  H01L2924/00

摘要： The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally includes separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into a electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.

摘要翻译： 本发明涉及纳米线材料复合体的制造方法和制造方法。 提供了具有连接到至少一个表面的一部分的纳米线的衬底。 在该部分上沉积材料以形成纳米线材料复合材料。 该方法进一步可选地包括从衬底分离纳米线材料复合物以形成独立的纳米线材料复合材料。 独立的纳米线材料复合材料任选进一步加工成电子基片。 可以使用本文所述的方法来生产各种电子基板。 例如，多个发光二极管可以由多个层叠的纳米线材料复合体制成，每个复合层发射不同波长的光。

公开(公告)号：US07741197B1

公开(公告)日：2010-06-22

申请号：US11643025

申请日：2006-12-20

申请人： Xiangfeng Duan ,  Paul Bernatis ,  Alice Fischer-Colbrie ,  James M. Hamilton ,  Francesco Lemmi ,  Yaoling Pan ,  J. Wallace Parce ,  Cheri X. Y. Pereira ,  David P. Stumbo

发明人： Xiangfeng Duan ,  Paul Bernatis ,  Alice Fischer-Colbrie ,  James M. Hamilton ,  Francesco Lemmi ,  Yaoling Pan ,  J. Wallace Parce ,  Cheri X. Y. Pereira ,  David P. Stumbo

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02639 ,  B82Y30/00 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/02628 ,  Y10S977/70 ,  Y10S977/742

摘要： The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.

摘要翻译： 本发明涉及收获，整合和利用纳米材料，特别是细长的纳米线材料的方法。 本发明提供了收获纳米线的方法，其包括选择性地蚀刻放置在纳米线生长衬底上以去除纳米线的牺牲层。 本发明还提供了将纳米线整合到电子器件中的方法，其包括将圆筒的外表面与纳米线的流体悬浮液接触并滚动纳米线涂覆的圆筒以将纳米线沉积到表面上。 还提供了使用喷墨打印机或孔径以纳米线排列纳米线的方法。 本发明的另外的方面提供了用于防止基于纳米线的晶体管中的栅极短路的方法。 提供了收获和集成纳米线的其他方法。