Method of making CMOS with organic and inorganic semiconducting region
    8.
    发明授权
    Method of making CMOS with organic and inorganic semiconducting region 失效
    用有机和无机半导体区域制造CMOS的方法

    公开(公告)号:US5612228A

    公开(公告)日:1997-03-18

    申请号:US634599

    申请日:1996-04-24

    摘要: A method of fabricating a thin film transistor device including forming first and second spaced apart control electrodes on a surface of a supporting substrate and forming a dielectric layer over the control electrodes. Inorganic and organic thin film transistors are formed on the dielectric layer, one on each control electrode. The inorganic and organic thin film transistors are n-type and p-type conductivity, respectively, and may be integrated into a complementary circuit. Also, the thin film transistor device is fabricated at relatively low temperatures so that plastic supporting substrates can be utilized.

    摘要翻译: 一种制造薄膜晶体管器件的方法,包括在支撑衬底的表面上形成第一和第二间隔开的控制电极,并在控制电极上形成电介质层。 无机和有机薄膜晶体管形成在每个控制电极上的电介质层上。 无机和有机薄膜晶体管分别是n型和p型导电性,并且可以集成到互补电路中。 此外,薄膜晶体管器件在相对低的温度下制造,从而可以利用塑料支撑衬底。

    Top emitting VCSEL with etch stop layer
    9.
    发明授权
    Top emitting VCSEL with etch stop layer 失效
    顶部发射具有蚀刻停止层的VCSEL

    公开(公告)号:US5293392A

    公开(公告)日:1994-03-08

    申请号:US922719

    申请日:1992-07-31

    IPC分类号: H01S5/183 H01S5/20 H01S3/19

    摘要: A top emitting vertical cavity surface emitting laser with an etch stop layer positioned in the top mirror stack so the stack can be etched to form a trench surrounding a mesa with the emitting area on the mesa and the trench confining current flow and lasing to the mesa.

    摘要翻译: 顶部发射垂直腔表面发射激光器,其具有定位在顶部反射镜堆叠中的蚀刻停止层,使得可以蚀刻该堆叠以形成围绕台面的台面的沟槽,并且沟槽限制电流和激光到台面 。

    Patterened mirror vertical cavity surface emitting laser
    10.
    发明授权
    Patterened mirror vertical cavity surface emitting laser 失效
    Patterened镜面垂直腔表面发射激光

    公开(公告)号:US5258316A

    公开(公告)日:1993-11-02

    申请号:US858288

    申请日:1992-03-26

    摘要: VCSELs including a central active layer with upper and lower mirror stacks wherein a circular trench is formed in one mirror stack to define a lasing area. The trench reduces reflectivity to prevent lasing outside the operating area and an oxygen implant in the trench confines current distribution to maximize power output and efficiency. The trench allows self-alignment throughout most of the manufacturing process.

    摘要翻译: VCSEL包括具有上反射镜和下反射镜叠层的中心活性层,其中在一个反射镜叠层中形成圆形沟槽以限定激光区域。 沟槽减少反射率以防止激光在工作区域外,并且沟槽中的氧注入限制电流分布以最大化功率输出和效率。 沟槽允许在大部分制造过程中自对准。