公开(公告)号：US20120091068A1

公开(公告)日：2012-04-19

申请号：US13378100

申请日：2010-06-23

申请人： Florina Corina Patcas ,  Grigorios Kolios ,  Götz-Peter Schindler ,  Peter Pfab ,  Reinhard Hess

发明人： Florina Corina Patcas ,  Grigorios Kolios ,  Götz-Peter Schindler ,  Peter Pfab ,  Reinhard Hess

IPC分类号： C02F1/32

CPC分类号： C02F1/32 ,  C02F1/725 ,  C02F2103/10 ,  C02F2103/28 ,  C02F2103/36 ,  C02F2103/365

摘要： The present invention relates to a process for the purification of a contaminant-containing stream by bringing the stream to be purified into contact with a heterogeneous photocatalyst with irradiation with light, where the bringing into contact takes place in the presence of at least one compound dissolved in the stream and comprising at least one metal selected from the group consisting of iron, chromium, nickel, cobalt, manganese and mixtures thereof, and to the use of a heterogeneous photocatalyst for the purification of a contaminant-containing stream, where, in the stream to be purified, at least one compound comprising at least one metal selected from the group consisting of iron, chromium, nickel, cobalt, manganese and mixtures thereof is present in dissolved form.

摘要翻译： 本发明涉及一种通过使待纯化物流与异质光催化剂接触的方法，该方法是用光照射进行，其中在存在至少一种溶解的化合物的情况下进行接触 并且包含至少一种选自铁，铬，镍，钴，锰及其混合物的金属，以及使用异相光催化剂来净化含污染物流，其中在 要纯化的物流，至少一种包含至少一种选自铁，铬，镍，钴，锰及其混合物的金属的化合物以溶解的形式存在。

公开(公告)号：US20110042326A1

公开(公告)日：2011-02-24

申请号：US12990723

申请日：2009-04-30

申请人： Alexandra Seeber ,  Götz-Peter Schindler ,  Katrin Freitag ,  Reinhard Hess ,  Rudolf Piehl ,  Thilo Hahn ,  Thomas Hill ,  Michael Hesse ,  Piotr Makarczyk

发明人： Alexandra Seeber ,  Götz-Peter Schindler ,  Katrin Freitag ,  Reinhard Hess ,  Rudolf Piehl ,  Thilo Hahn ,  Thomas Hill ,  Michael Hesse ,  Piotr Makarczyk

IPC分类号： C02F1/32

CPC分类号： C02F1/725 ,  B01J21/063 ,  B01J23/02 ,  B01J23/10 ,  B01J23/12 ,  B01J23/75 ,  B01J27/24 ,  B01J35/004 ,  B01J35/026 ,  B01J35/1014 ,  B01J35/1019 ,  B01J35/1038 ,  B01J35/1042 ,  B01J35/1061 ,  B01J37/0009 ,  B01J37/04 ,  B01J37/082 ,  C02F1/30 ,  C02F1/32 ,  C02F2103/10 ,  C02F2103/28 ,  C02F2103/32 ,  C02F2103/365 ,  C02F2305/10

摘要： The present invention relates to a method of purifying wastewater by contacting the wastewater which is to be purified with a rod-shaped TiO2 photocatalyst which has a BET surface area of 25 to 200 m2/g, a pore volume of 0.10 to 1.00 ml/g, and a median pore diameter of 0.005 to 0.050 μm, with irradiation by light, and to the use of such a rod-shaped TiO2 photocatalyst which has a BET surface area of 25 to 200 m2/g, a pore volume of 0.10 to 1.00 ml/g, and a median pore diameter of 0.005 to 0.050 μm, for purifying wastewater with irradiation by light.

摘要翻译： 本发明涉及一种净化废水的方法，该方法是将待纯化的废水与BET表面积为25〜200m 2 / g，孔体积为0.10〜1.00ml / g的棒状TiO 2光催化剂 ，中值孔径为0.005〜0.050μm，通过光照射，使用BET表面积为25〜200m 2 / g，孔体积为0.10〜1.00的棒状TiO 2光催化剂 ml / g，中值孔径为0.005〜0.050μm，用于通过光照射来净化废水。

公开(公告)号：US08741690B2

公开(公告)日：2014-06-03

申请号：US13453787

申请日：2012-04-23

申请人： Thorsten Meyer ,  Rainer Leuschner ,  Gerald Ofner ,  Reinhard Hess ,  Recai Sezi

发明人： Thorsten Meyer ,  Rainer Leuschner ,  Gerald Ofner ,  Reinhard Hess ,  Recai Sezi

IPC分类号： H01L21/00

CPC分类号： H01L21/568 ,  H01L23/49811 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L25/16 ,  H01L2224/12105 ,  H01L2224/211 ,  H01L2224/221 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1052 ,  H01L2225/107 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2224/19 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2224/82

摘要： A method of manufacturing a semiconductor package includes embedding a semiconductor chip in an encapsulant. First contact pads are formed on a first main face of the semiconductor package and second contact pads are formed on a second main face of the semiconductor package opposite the first main face. A diameter d in micrometers of an exposed contact pad area of the second contact pads satisfies d≧(8/25)x+142 μm, where x is a pitch of the second contact pads in micrometers.

摘要翻译： 制造半导体封装的方法包括将半导体芯片嵌入密封剂中。 第一接触焊盘形成在半导体封装的第一主面上，并且第二接触焊盘形成在与第一主面相对的半导体封装的第二主面上。 第二接触焊盘的暴露的接触焊盘区域的直径d（以微米为单位）满足d≥（8/25）×+142μm，其中x是以微米为单位的第二接触焊盘的间距。

公开(公告)号：US07411081B2

公开(公告)日：2008-08-12

申请号：US10755231

申请日：2004-01-13

申请人： Ulrich Mueller ,  Gerald Lippert ,  Olga Schubert ,  Michael Hesse ,  Reinhard Hess ,  Michael Stoesser ,  Omar M. Yaghi

发明人： Ulrich Mueller ,  Gerald Lippert ,  Olga Schubert ,  Michael Hesse ,  Reinhard Hess ,  Michael Stoesser ,  Omar M. Yaghi

IPC分类号： C07F3/06 ,  C07F15/00 ,  C07F15/02 ,  B01J31/12

CPC分类号： C07F3/003 ,  B01J20/226

摘要： A process for preparing an organometallic framework material comprising reacting at least one metal salt with at least one at least bidentate compound capable of coordination to the metal ion of said metal salt, in the presence of an aqueous solvent system and at least one base wherein at least one bidentate compound comprises at least carboxy group and at least one further group which is not a carboxy group and which is capable of forming a hydrogen bridge linkage.

摘要翻译： 一种制备有机金属骨架材料的方法，包括使至少一种金属盐与至少一种能够与所述金属盐的金属离子配位的至少二齿化合物在水性溶剂体系和至少一种碱的存在下反应，其中在 至少一个二齿化合物至少包含羧基和至少一个不是羧基并且能够形成氢桥键的另外的基团。

公开(公告)号：US08951915B2

公开(公告)日：2015-02-10

申请号：US13609306

申请日：2012-09-11

申请人： Reinhard Hess ,  Katharina Umminger ,  Gabriel Maier ,  Markus Menath ,  Gunther Mackh ,  Hannes Eder ,  Alexander Heinrich

发明人： Reinhard Hess ,  Katharina Umminger ,  Gabriel Maier ,  Markus Menath ,  Gunther Mackh ,  Hannes Eder ,  Alexander Heinrich

IPC分类号： H01L21/44

CPC分类号： H01L23/3171 ,  H01L21/02107 ,  H01L21/30655 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/3185 ,  H01L23/485 ,  H01L24/05 ,  H01L2224/0236 ,  H01L2224/02372 ,  H01L2224/02375 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/05548 ,  H01L2224/0556 ,  H01L2224/0557 ,  H01L2224/05611 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/05664 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/01013 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2924/0103 ,  H01L2924/01028 ,  H01L2924/01026 ,  H01L2224/05552

摘要： A method for manufacturing a chip arrangement is provided, the method including: forming a hole in a carrier including at least one chip, wherein forming a hole in the carrier includes: selectively removing carrier material, thereby forming a cavity in the carrier, forming passivation material over one or more cavity walls exposed by the selective removal of the carrier material; selectively removing a portion of the passivation material and further carrier material exposed by the selective removal of the passivation material, wherein a further portion of the passivation material remains over at least one cavity side wall; the method further including subsequently forming a layer over the further portion of passivation material remaining over the at least one cavity side wall.

摘要翻译： 提供了一种制造芯片布置的方法，该方法包括：在载体中形成一个孔，该载体包括至少一个芯片，其中在载体中形成孔包括：选择性地去除载体材料，从而在载体中形成空腔，形成钝化 通过选择性去除载体材料暴露的一个或多个腔壁上的材料; 选择性地去除钝化材料的一部分和通过选择性去除钝化材料暴露的另外的载体材料，其中钝化材料的另一部分保留在至少一个空腔侧壁上; 该方法还包括随后在保留在至少一个空腔侧壁上的钝化材料的另一部分上形成层。

公开(公告)号：US20050154222A1

公开(公告)日：2005-07-14

申请号：US10755231

申请日：2004-01-13

申请人： Ulrich Muller ,  Gerald Lippert ,  Olga Schubert ,  Michael Hesse ,  Reinhard Hess ,  Michael Stosser ,  Omar Yaghi

发明人： Ulrich Muller ,  Gerald Lippert ,  Olga Schubert ,  Michael Hesse ,  Reinhard Hess ,  Michael Stosser ,  Omar Yaghi

IPC分类号： B01J20/22 ,  C07F3/00 ,  C07F3/06 ,  C07F15/00 ,  C07F15/02

CPC分类号： C07F3/003 ,  B01J20/226

摘要： A process for preparing an organometallic framework material comprising reacting at least one metal salt with at least one at least bidentate compound capable of coordination to the metal ion of said metal salt, in the presence of an aqueous solvent system and at least one base wherein at least one bidentate compound comprises at least carboxy group and at least one further group which is not a carboxy group and which is capable of forming a hydrogen bridge linkage.

摘要翻译： 一种制备有机金属骨架材料的方法，包括使至少一种金属盐与至少一种能够与所述金属盐的金属离子配位的至少二齿化合物在水性溶剂体系和至少一种碱的存在下反应，其中在 至少一个二齿化合物至少包含羧基和至少一个不是羧基并且能够形成氢桥键的另外的基团。

公开(公告)号：US20120208319A1

公开(公告)日：2012-08-16

申请号：US13453787

申请日：2012-04-23

申请人： Thorsten Meyer ,  Rainer Leuschner ,  Gerald Ofner ,  Reinhard Hess ,  Recai Sezi

发明人： Thorsten Meyer ,  Rainer Leuschner ,  Gerald Ofner ,  Reinhard Hess ,  Recai Sezi

IPC分类号： H01L21/77 ,  B23K31/02 ,  H01L21/78

CPC分类号： H01L21/568 ,  H01L23/49811 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L25/16 ,  H01L2224/12105 ,  H01L2224/211 ,  H01L2224/221 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1052 ,  H01L2225/107 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2224/19 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2224/82

摘要： A method of manufacturing a semiconductor package includes embedding a semiconductor chip in an encapsulant. First contact pads are formed on a first main face of the semiconductor package and second contact pads are formed on a second main face of the semiconductor package opposite the first main face. A diameter d in micrometers of an exposed contact pad area of the second contact pads satisfies d≧(8/25)x+142 μm, where x is a pitch of the second contact pads in micrometers.

摘要翻译： 制造半导体封装的方法包括将半导体芯片嵌入密封剂中。 第一接触焊盘形成在半导体封装的第一主面上，并且第二接触焊盘形成在与第一主面相对的半导体封装的第二主面上。 第二接触焊盘的暴露的接触焊盘区域的直径d（以微米为单位）满足d≥（8/25）×+142μm，其中x是以微米为单位的第二接触焊盘的间距。

公开(公告)号：US08183696B2

公开(公告)日：2012-05-22

申请号：US12750946

申请日：2010-03-31

申请人： Thorsten Meyer ,  Rainer Leuschner ,  Gerald Ofner ,  Reinhard Hess ,  Recai Sezi

发明人： Thorsten Meyer ,  Rainer Leuschner ,  Gerald Ofner ,  Reinhard Hess ,  Recai Sezi

IPC分类号： H01L23/48 ,  H01L21/78 ,  H01L23/488 ,  H01L21/98

CPC分类号： H01L21/568 ,  H01L23/49811 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L25/16 ,  H01L2224/12105 ,  H01L2224/211 ,  H01L2224/221 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1052 ,  H01L2225/107 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2224/19 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2224/82

摘要： A semiconductor package includes a semiconductor chip, an encapsulant embedding the semiconductor chip, first contact pads on a first main face of the semiconductor package and second contact pads on a second main face of the semiconductor package opposite to the first main face. The diameter d in micrometers of an exposed contact pad area of the second contact pads satisfies d≧(8/25)x+142 μm, wherein x is the pitch of the second contact pads in micrometers.

摘要翻译： 半导体封装包括半导体芯片，将半导体芯片嵌入的密封剂，在半导体封装的第一主面上的第一接触焊盘和与第一主面相对的半导体封装的第二主面上的第二接触焊盘。 第二接触焊盘的暴露的接触焊盘区域的直径d（以微米为单位）满足d≥（8/25）×+142μm，其中x是以微米为单位的第二接触焊盘的间距。

公开(公告)号：US20110241218A1

公开(公告)日：2011-10-06

申请号：US12750946

申请日：2010-03-31

申请人： Thorsten Meyer ,  Rainer Leuschner ,  Gerald Ofner ,  Reinhard Hess ,  Recai Sezi

发明人： Thorsten Meyer ,  Rainer Leuschner ,  Gerald Ofner ,  Reinhard Hess ,  Recai Sezi

IPC分类号： H01L23/48 ,  H01L23/488 ,  H01L21/78 ,  H01L21/98

CPC分类号： H01L21/568 ,  H01L23/49811 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L25/16 ,  H01L2224/12105 ,  H01L2224/211 ,  H01L2224/221 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1052 ,  H01L2225/107 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2224/19 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2224/82

摘要： A semiconductor package includes a semiconductor chip, an encapsulant embedding the semiconductor chip, first contact pads on a first main face of the semiconductor package and second contact pads on a second main face of the semiconductor package opposite to the first main face. The diameter d in micrometers of an exposed contact pad area of the second contact pads satisfies d≧(8/25)x+142 μm, wherein x is the pitch of the second contact pads in micrometers.

摘要翻译： 半导体封装包括半导体芯片，将半导体芯片嵌入的密封剂，在半导体封装的第一主面上的第一接触焊盘和与第一主面相对的半导体封装的第二主面上的第二接触焊盘。 第二接触焊盘的暴露的接触焊盘区域的直径d（以微米为单位）满足d≥（8/25）×+142μm，其中x是以微米为单位的第二接触焊盘的间距。

公开(公告)号：US20140070376A1

公开(公告)日：2014-03-13

申请号：US13609306

申请日：2012-09-11

申请人： Reinhard Hess ,  Katharina Umminger ,  Gabriel Maier ,  Markus Menath ,  Gunther Mackh ,  Hannes Eder ,  Alexander Heinrich

发明人： Reinhard Hess ,  Katharina Umminger ,  Gabriel Maier ,  Markus Menath ,  Gunther Mackh ,  Hannes Eder ,  Alexander Heinrich

IPC分类号： H01L21/768 ,  H01L29/02

CPC分类号： H01L23/3171 ,  H01L21/02107 ,  H01L21/30655 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/3185 ,  H01L23/485 ,  H01L24/05 ,  H01L2224/0236 ,  H01L2224/02372 ,  H01L2224/02375 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/05548 ,  H01L2224/0556 ,  H01L2224/0557 ,  H01L2224/05611 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/05664 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/01013 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2924/0103 ,  H01L2924/01028 ,  H01L2924/01026 ,  H01L2224/05552

摘要： A method for manufacturing a chip arrangement is provided, the method including: forming a hole in a carrier including at least one chip, wherein forming a hole in the carrier includes: selectively removing carrier material, thereby forming a cavity in the carrier, forming passivation material over one or more cavity walls exposed by the selective removal of the carrier material; selectively removing a portion of the passivation material and further carrier material exposed by the selective removal of the passivation material, wherein a further portion of the passivation material remains over at least one cavity side wall; the method further including subsequently forming a layer over the further portion of passivation material remaining over the at least one cavity side wall.

摘要翻译： 提供了一种制造芯片布置的方法，该方法包括：在载体中形成一个孔，该载体包括至少一个芯片，其中在载体中形成孔包括：选择性地去除载体材料，从而在载体中形成空腔，形成钝化 通过选择性去除载体材料暴露的一个或多个腔壁上的材料; 选择性地去除钝化材料的一部分和通过选择性去除钝化材料暴露的另外的载体材料，其中钝化材料的另一部分保留在至少一个空腔侧壁上; 该方法还包括随后在保留在至少一个空腔侧壁上的钝化材料的另一部分上形成层。