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公开(公告)号:US12072507B2
公开(公告)日:2024-08-27
申请号:US16855554
申请日:2020-04-22
Inventor: Osamu Wakabayashi , Hiroshi Ikenoue , Hiroaki Oizumi
IPC: G02B27/09 , B23K26/064 , B23K26/073 , B23K26/08 , B23K26/082 , B23K26/352 , C23C14/18 , C23C14/48 , C23C14/54 , G02B27/14 , H01L21/268 , H01L21/67 , H01S3/00 , H01L21/04 , H01L29/16 , H01L29/167 , H01S3/034 , H01S3/038 , H01S3/10 , H01S3/225
CPC classification number: G02B27/0933 , B23K26/064 , B23K26/0732 , B23K26/082 , B23K26/0876 , B23K26/352 , C23C14/18 , C23C14/48 , C23C14/54 , G02B27/0961 , G02B27/0966 , G02B27/14 , H01L21/67115 , H01S3/005 , H01L21/0455 , H01L29/1608 , H01L29/167 , H01S3/034 , H01S3/038 , H01S3/10069 , H01S3/225
Abstract: A laser radiation optical system for laser doping and post-annealing, the laser radiation system including A. a laser apparatus configured to generate pulsed laser light that belongs to an ultraviolet region, B. a stage configured to move a radiation receiving object in an at least one scan direction, the radiation receiving object being an impurity source film containing at least an impurity element as a dopant and formed on a semiconductor substrate, and C. an optical system including a beam homogenizer configured to shape the beam shape of the pulsed laser light into a rectangular shape and generate a beam for laser doping and a beam for post-annealing that differ from each other in terms of a first beam width in the scan direction but have the same second beam width perpendicular to the scan direction.
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公开(公告)号:US11826852B2
公开(公告)日:2023-11-28
申请号:US17088704
申请日:2020-11-04
Applicant: Gigaphoton Inc.
Inventor: Akira Suwa , Osamu Wakabayashi , Masashi Shimbori , Masakazu Kobayashi
CPC classification number: B23K26/1462 , B23K26/126
Abstract: A laser processing apparatus according to the present disclosure includes a placement base on which a processing receiving object is placed, an optical system that guides laser light to the processing receiving object, a gas supply port via which a gas is supplied to a laser light irradiated region of the processing receiving object, a gas recovery port via which the supplied gas is recovered, a mover that moves the irradiated region, and a controller that controls, in accordance with the moving direction of the irradiated region, the direction of the flow of the gas flowing from the gas supply port to the gas recovery port, and the controller changes the direction of the gas flow in response to a change in the moving direction of the irradiated region in such a way that the gas flows in the direction opposite the moving direction of the irradiated region.
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公开(公告)号:US11768362B2
公开(公告)日:2023-09-26
申请号:US16853611
申请日:2020-04-20
Applicant: Gigaphoton Inc.
Inventor: Akiyoshi Suzuki , Osamu Wakabayashi
IPC: G02B19/00 , G01J1/42 , G02B5/00 , G02B26/08 , G02B27/09 , G02B27/30 , G03F7/20 , H01L21/027 , H01S3/097
CPC classification number: G02B19/0019 , G01J1/4257 , G02B5/001 , G02B19/0047 , G02B26/0816 , G02B27/0927 , G02B27/0955 , G02B27/30 , G03F7/2006 , G03F7/2008 , H01L21/0275 , G01J2001/4261 , H01S3/097
Abstract: A laser radiation system according to a viewpoint of the present disclosure includes a first optical system configured to convert a first laser flux into a second laser flux, a multimirror device including mirrors, configured to be capable of controlling the angle of the attitude of each of the mirrors, and configured to divide the second laser flux into laser fluxes and reflect the laser fluxes in directions to produce the divided laser fluxes, a Fourier transform optical system configured to focus the divided laser fluxes, and a control section configured to control the angle of the attitude of each of the mirrors in such a way that the Fourier transform optical system superimposes the laser fluxes, which are divided by the mirrors separate from each other by at least a spatial coherence length of the second laser flux, on one another.
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公开(公告)号:US11764541B2
公开(公告)日:2023-09-19
申请号:US17220270
申请日:2021-04-01
Applicant: Gigaphoton Inc.
Inventor: Taisuke Miura , Osamu Wakabayashi , Hironori Igarashi
CPC classification number: H01S5/0428 , G03F7/70041 , G03F7/70575 , H01S3/2308 , H01S3/2375 , H01S5/0092 , H01S5/0687 , H01S5/06808 , H01S5/509 , H01S5/12 , H01S2301/163
Abstract: In a laser system according to a viewpoint of the present disclosure, a first amplifier amplifies first pulsed laser light outputted from a first semiconductor laser system into second pulsed laser light, a wavelength conversion system converts the second pulsed laser light in terms of wavelength into third pulsed laser light, and an excimer amplifier amplifies the third pulsed laser light. The first semiconductor laser system includes a first current controller that controls current flowing through a first semiconductor laser in such a way that first laser light outputted from the first semiconductor laser is caused to undergo chirping and a first semiconductor optical amplifier that amplifies the first laser light into pulsed light. The laser system includes a control section that controls the amount of chirping performed on the first pulsed laser light in such a way that excimer laser light having a target spectral linewidth is achieved.
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公开(公告)号:US11710660B2
公开(公告)日:2023-07-25
申请号:US16855427
申请日:2020-04-22
Inventor: Hiroshi Ikenoue , Osamu Wakabayashi , Hiroaki Oizumi , Akira Suwa
IPC: H01L21/225 , H01L21/268 , H01L21/67 , H01S3/11 , H01S3/225 , G02F1/01 , G02B27/09 , H01L21/78 , H01L21/223 , H01S3/23
CPC classification number: H01L21/78 , G02B27/0955 , G02F1/0121 , H01L21/223 , H01L21/268 , H01L21/67092 , H01L21/67115 , H01S3/11 , H01S3/225 , H01S3/2308 , G02F2203/48
Abstract: A laser irradiation method of irradiating, with a pulse laser beam, an irradiation object in which an impurity source film is formed on a semiconductor substrate includes: reading fluence per pulse of the pulse laser beam with which a rectangular irradiation region set on the irradiation object is irradiated and the number of irradiation pulses the irradiation region is irradiated, the fluence being equal to or larger than a threshold at or beyond which ablation potentially occurs to the impurity source film when the irradiation object is irradiated with pulses of the pulse laser beam in the irradiation pulse number and smaller than a threshold at or beyond which damage potentially occurs to the surface of the semiconductor substrate; calculating a scanning speed Vdx; and moving the irradiation object at the scanning speed Vdx relative to the irradiation region while irradiating the irradiation region with the pulse laser beam at the repetition frequency f.
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公开(公告)号:US11502478B2
公开(公告)日:2022-11-15
申请号:US16674918
申请日:2019-11-05
Applicant: Gigaphoton Inc.
Inventor: Hiroyuki Masuda , Osamu Wakabayashi
Abstract: A laser apparatus according to the present disclosure includes: a laser output unit configured to perform laser oscillation; and a control unit configured to acquire first laser performance data obtained when the laser output unit performs laser oscillation based on a first laser control parameter, and second laser performance data obtained when the laser output unit performs laser oscillation based on a second laser control parameter, while laser output from the laser output unit to an external device is stopped, and determine whether the second laser performance data has been improved as compared to the first laser performance data.
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公开(公告)号:US11271360B2
公开(公告)日:2022-03-08
申请号:US16731408
申请日:2019-12-31
Applicant: Gigaphoton Inc.
Inventor: Atsushi Fuchimukai , Osamu Wakabayashi , Yoichi Sasaki
Abstract: A wavelength converter including: A. a crystal holder configured to hold a nonlinear crystal configured to convert a wavelength of a laser beam incident thereon and output the wavelength-converted laser beam; B. a first container configured to accommodate the crystal holder and include a light incident window so provided as to intersect an optical path of the laser beam incident on the nonlinear crystal and a light exiting window so provided as to intersect the optical path of the laser beam having exited out of the nonlinear crystal; C. a second container configured to accommodate the first container; D. a position adjusting mechanism configured to adjust at least a position of the first container; and E. an isolation mechanism configured to spatially isolate the light incident window and the light exiting window from the position adjusting mechanism.
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公开(公告)号:US11194255B2
公开(公告)日:2021-12-07
申请号:US16812784
申请日:2020-03-09
Applicant: Gigaphoton Inc.
Inventor: Koji Kakizaki , Masakazu Kobayashi , Akira Suwa , Osamu Wakabayashi
Abstract: A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ΔZsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 μm to 150 μm inclusive at the transfer position.
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公开(公告)号:US10932350B2
公开(公告)日:2021-02-23
申请号:US16710208
申请日:2019-12-11
Applicant: Gigaphoton Inc.
Inventor: Tatsuya Yanagida , Osamu Wakabayashi
IPC: H05G2/00 , G03F7/20 , H01S3/223 , H01S3/06 , H01S3/11 , H01S3/08 , H01S3/107 , H01S3/23 , H01S3/16 , H01S3/00 , H01S3/102
Abstract: An extreme ultraviolet light (EUV) generation system is configured to improve conversion efficiency of energy of a laser system to EUV energy by improving the efficiency of plasma generation. The EUV generation system includes a target generation unit configured to output a target toward a plasma generation region in a chamber. The laser system is configured to generate a first pre-pulse laser beam, a second pre-pulse laser beam, and a main pulse laser beam so that the target is irradiated with the first pre-pulse laser beam, the second pre-pulse laser beam, and the main pulse laser beam in this order. In addition, the EUV generation system includes a controller configured to control the laser system so that a fluence of the second pre-pulse laser beam is equal to or higher than 1 J/cm2 and equal to or lower than a fluence of the main pulse laser beam.
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公开(公告)号:US10666008B2
公开(公告)日:2020-05-26
申请号:US16178382
申请日:2018-11-01
Applicant: Gigaphoton Inc.
Inventor: Natsushi Suzuki , Osamu Wakabayashi , Hiroaki Tsushima , Masanori Yashiro
IPC: H01S3/036 , H01S3/104 , H01S3/225 , B01D53/34 , B01D53/82 , H01S3/23 , B01D53/04 , B01D53/68 , B01D53/86
Abstract: A gas supply system may include a first gas supply line, a second gas supply line, a circulation gas pipe, a gas purification unit, a first valve, and a second valve. The first gas supply line may include a first branching point at which the first gas supply line branches into a first branch connected to a first chamber and a second branch connected to a second chamber and the second gas supply line may include a second branching point at which the second gas supply line branches into a third branch connected to the first chamber and a fourth branch connected to the second chamber. A first portion of the first gas supply line upstream from the first branching point and a second portion of the second gas supply line upstream from the second branching point may be constituted by separate pipes from each other.
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