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公开(公告)号：US20120236885A1
公开(公告)日：2012-09-20
申请号：US13401734
申请日：2012-02-21
IPC分类号： H01S3/13
CPC分类号： H01S3/03 , G03F7/70025 , H01S3/036 , H01S3/134 , H01S3/2316 , H01S3/2366
摘要： A laser device for an exposure apparatus may include: a MOPA-type or MOPO-type laser device including a seed laser and at least one gas discharge-pumped amplifier stage that receives output light from the seed laser as an input, amplifies the light, and outputs the amplified light; and at least one of a laser gas control device that at least changes the total pressure of a laser gas in said amplifier stage in accordance with requested energy and a laser power source control device that at least changes pump intensity of discharge electrodes in said amplifier stage in accordance with said requested energy, in a case where the energy of laser output light from said laser device is to be changed discontinuously in response to a request from an exposure apparatus,
摘要翻译： 用于曝光装置的激光装置可以包括：MOPA型或MOPO型激光装置，其包括种子激光器和至少一个气体放电泵浦放大器级，其接收来自种子激光器的输出光作为输入，放大光， 并输出放大的光; 以及激光气体控制装置中的至少一个，所述激光气体控制装置至少根据所要求的能量来改变所述放大器级中的激光气体的总压力，激光电源控制装置至少改变放大器级中的放电电极的泵浦强度 根据所述要求的能量，在来自所述激光装置的激光输出光的能量响应于来自曝光装置的请求而不连续地改变的情况下，
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公开(公告)号：US20150168848A1
公开(公告)日：2015-06-18
申请号：US14629282
申请日：2015-02-23
申请人： Hiroshi TANAKA , Akihiko KUROSU , Hiroyuki MASUDA , Hideyuki OCHIAI , Osamu WAKABAYASHI , Masato MORIYA
发明人： Hiroshi TANAKA , Akihiko KUROSU , Hiroyuki MASUDA , Hideyuki OCHIAI , Osamu WAKABAYASHI , Masato MORIYA
IPC分类号： G03F7/20 , H01L21/268 , H01L21/67 , H01L21/66
CPC分类号： G03F7/70483 , G03F7/70041 , G03F7/70058 , G03F7/70358 , H01L21/268 , H01L21/67115 , H01L21/67253 , H01L22/10 , H01L22/26
摘要： A light source apparatus according to an embodiment may be used for an exposure apparatus which exposes a plurality of wafers by repeating a wafer exposure for exposing a total exposure area of each wafer. The wafer exposure may include a sequential execution of scanning exposures in which each divided area defined by dividing the total exposure area of each wafer is scanned by pulsed light. The apparatus may comprise: a light source controller configured to execute a control for outputting the pulsed light based on a luminescence trigger signal received from the exposure apparatus; a detector configured to detect a characteristic of the pulsed light; and a data collection processor configured to collect at least a piece of data in data included in a pulse light data group related to the pulsed light detected by the detector and a control data group related to the control, and execute a mapping process of mapping the collected data by at least one of scanning exposure basis and wafer exposure basis.
摘要翻译： 根据实施例的光源装置可以用于通过重复用于暴露每个晶片的总曝光区域的晶片曝光而暴露多个晶片的曝光装置。 晶片曝光可以包括扫描曝光的顺序执行，其中通过用脉冲光扫描每个晶片的总曝光面积所限定的每个划分区域。 该装置可以包括：光源控制器，被配置为基于从曝光装置接收的发光触发信号执行用于输出脉冲光的控制; 检测器，被配置为检测所述脉冲光的特性; 以及数据收集处理器，被配置为收集与由所述检测器检测到的脉冲光有关的脉冲光数据组中包含的数据中的至少一条数据以及与所述控制相关的控制数据组，并执行映射处理 通过扫描曝光基础和晶片曝光基础中的至少一个来收集数据。
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公开(公告)号：US20150139258A1
公开(公告)日：2015-05-21
申请号：US14602208
申请日：2015-01-21
IPC分类号： H01S3/097
CPC分类号： H01S3/09702 , H01S3/0014 , H01S3/08009 , H01S3/09705 , H01S3/0971 , H01S3/2366
摘要： A laser apparatus according to embodiment may include: a laser chamber filled with a laser gain medium; a pair of electrodes disposed in the laser chamber; a charger configured to apply a charge voltage for causing a discharge to occur between the pair of the electrodes; a pulse power module configured to covert the charge voltage applied by the charger into a short pulsed voltage, and apply the short pulsed voltage between the pair of the electrodes; and a controller configured to calculate input energies Ein applied to the pair of the electrodes based on the charge voltage, calculate an integration value Einsum of the input energies Ein by integrating the calculated input energies Ein, and determine whether the integration value Einsum exceeds an integration lifetime value Einsumlife of input energy or not.
摘要翻译： 根据实施例的激光装置可以包括：填充有激光增益介质的激光室; 设置在激光室中的一对电极; 充电器，被配置为施加用于在所述一对电极之间发生放电的充电电压; 脉冲功率模块，被配置为将由充电器施加的充电电压转换成短脉冲电压，并且在一对电极之间施加短脉冲电压; 以及控制器，被配置为基于所述充电电压来计算施加到所述一对电极的输入能量Ein，通过对所计算的输入能量Ein进行积分来计算输入能量Ein的积分值Einsum，并且确定积分值Einsum是否超过积分 输入能量的寿命值Einsumlife。
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公开(公告)号：US20140369373A1
公开(公告)日：2014-12-18
申请号：US14245371
申请日：2014-04-04
CPC分类号： H01S3/2308 , G03F7/70025 , H01S3/083
摘要： The invention relates to a two-stage laser system well fit for semiconductor aligners, which is reduced in terms of spatial coherence while taking advantage of the high stability, high output efficiency and fine line width of the MOPO mode. The two-stage laser system for aligners comprises an oscillation-stage laser (50) and an amplification-stage laser (60). Oscillation laser light having divergence is used as the oscillation-stage laser (50), and the amplification-stage laser (60) comprises a Fabry-Perot etalon resonator made up of an input side mirror (1) and an output side mirror (2). The resonator is configured as a stable resonator.
摘要翻译： 本发明涉及一种适用于半导体对准器的两级激光系统，其在利用MOPO模式的高稳定性，高输出效率和细线宽度的同时，在空间相干性方面被减少。 用于对准器的两级激光系统包括振荡级激光器（50）和放大级激光器（60）。 具有发散的振荡激光用作振荡级激光器（50），放大级激光器（60）包括由输入侧反射镜（1）和输出侧反射镜（2）构成的法布里 - 珀罗标准具共振器 ）。 谐振器被配置为稳定谐振器。
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公开(公告)号：US20130215916A1
公开(公告)日：2013-08-22
申请号：US13590558
申请日：2012-08-21
CPC分类号： H01S3/10 , H01S3/005 , H01S3/08004 , H01S3/08086 , H01S3/10092 , H01S3/1055 , H01S3/106 , H01S3/1625 , H01S3/225 , H01S3/2251 , H01S3/2325 , H01S3/235 , H01S3/2375 , H01S5/0092 , H01S5/0604 , H01S5/06216 , H01S5/4012 , H01S5/4087
摘要： A laser apparatus includes a master oscillator capable of outputting a laser beam having a spectrum that includes at least three wavelength peaks, a multi-wavelength oscillation control mechanism capable of controlling energy of each of the wavelength peaks, a spectrum detecting unit that detects the spectrum of the above-mentioned laser beam, and a controller that controls the multi-wavelength oscillation control mechanism based on a detection result detected by the spectrum detecting unit.
摘要翻译： 激光装置包括能够输出具有包括至少三个波长峰值的光谱的激光束的主振荡器，能够控制每个波长峰值的能量的多波长振荡控制机构，检测频谱的频谱检测单元 以及控制器，其基于由所述频谱检测单元检测到的检测结果来控制所述多波长振荡控制机构。
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公开(公告)号：US20120248344A1
公开(公告)日：2012-10-04
申请号：US13523446
申请日：2012-06-14
IPC分类号： G21K5/00
摘要： An apparatus used with a laser apparatus may include a chamber, a target supply for supplying a target material to a region inside the chamber, a laser beam focusing optical system for focusing a laser beam from the laser apparatus in the region, and an optical system for controlling a beam intensity distribution of the laser beam.
摘要翻译： 与激光装置一起使用的装置可以包括：室，用于将目标材料供应到室内的区域的目标供应源，用于将来自该区域中的激光装置的激光束聚焦的激光束聚焦光学系统，以及光学系统 用于控制激光束的光束强度分布。
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公开(公告)号：US20110180734A1
公开(公告)日：2011-07-28
申请号：US13081899
申请日：2011-04-07
申请人： Masato MORIYA , Tamotsu ABE , Takashi SUGANUMA , Hiroshi SOMEYA , Takayuki YABU , Akira SUMITANI , Osamu WAKABAYASHI
发明人： Masato MORIYA , Tamotsu ABE , Takashi SUGANUMA , Hiroshi SOMEYA , Takayuki YABU , Akira SUMITANI , Osamu WAKABAYASHI
IPC分类号： H05G2/00
摘要： An EUV light source apparatus can reliably detect and accurately judge deterioration of an optical element in a laser beam focusing optics disposed within an EUV light generation chamber. This EUV light source apparatus includes: the EUV light generation chamber; a target material supply unit; an EUV light collector mirror; a driver laser; a window; a parabolic mirror which focuses collimated laser beam by reflection and is disposed within the EUV light generation chamber; an energy detector detecting energy of the laser beam diffused without being applied to a target material after being focused by the laser beam focusing optics when the EUV light is not generated; and a processing unit for judging the deterioration of the window and the parabolic mirror according to the laser beam energy detected by the energy detector.
摘要翻译： EUV光源装置可以可靠地检测并准确地判断设置在EUV光产生室内的激光束聚焦光学元件中的光学元件的劣化。 该EUV光源装置包括：EUV光产生室; 目标材料供应单位; EUV集光镜; 驱动激光器 一个窗口; 抛物面镜，其通过反射聚焦准直激光束并设置在EUV光产生室内; 能量检测器，当不产生EUV光时，检测在被激光束聚焦光学器件聚焦之后不会施加到目标材料上的激光束的能量扩散; 以及处理单元，用于根据由能量检测器检测的激光束能量来判断窗口和抛物面镜的劣化。
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公开(公告)号：US20100054297A1
公开(公告)日：2010-03-04
申请号：US12545495
申请日：2009-08-21
IPC分类号： H01S3/08
CPC分类号： H01S3/005 , G02B1/02 , H01S3/0057 , H01S3/08009 , H01S3/08054 , H01S3/10061 , H01S3/2251
摘要： At least either of the light entering plane or the light exiting plane is parallel to the (111) crystal face of the CaF2 crystal and the laser beam entering from the entering plane passes through the plane located between the [111] axis and the first azimuth axis in the locus of rotation of the [001] axis around the [111] axis and including the [111] axis and the first azimuth axis, the plane located between the [111] axis and the second azimuth axis in the locus of rotation of the [010] axis around the [111] axis and including the [111] axis and the second azimuth axis or the plane located between the [111] axis and the third azimuth axis in the locus of rotation of the [100] axis around the [111] axis and including the [111] axis and the third azimuth axis and exits from the exiting plane.
摘要翻译： 进入平面或出射平面的光中的至少任一个平行于CaF 2晶体的（111）晶面，并且从入射平面入射的激光束穿过位于[111]轴和第一方位角 [001]轴围绕[111]轴的旋转轨迹的轴线，包括[111]轴和第一方位轴，位于旋转轨迹中的[111]轴和第二方位角轴之间的平面 围绕[111]轴的[010]轴线，并且包括[111]轴和第二方位角轴或位于[111]轴和第三方位角之间的平面 围绕[111]轴并且包括[111]轴和第三方位角轴并从出射平面离开。
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公开(公告)号：US20100051832A1
公开(公告)日：2010-03-04
申请号：US12543582
申请日：2009-08-19
IPC分类号： G21K5/04
CPC分类号： G03F7/70033 , G03F7/70975 , H05G2/00 , H05G2/003 , H05G2/008
摘要： An EUV light source apparatus by which detachment of a chamber or a part of the chamber, movement to a maintenance area, and highly accurate placement relative to projection optics can be performed easily for maintenance of the EUV light source apparatus. The EUV light source apparatus is an apparatus for generating plasma by applying a laser beam to a target material within a chamber and entering EUV light radiated from the plasma into projection optics of exposure equipment, and includes a positioning mechanism for positioning the chamber or a maintenance unit of the chamber in a predetermined location where an optical axis of the collected extreme ultraviolet light and an optical axis of the projection optics of the exposure equipment are aligned, and a movement mechanism for moving the chamber or the maintenance unit of the chamber between the predetermined location and a maintenance area.
摘要翻译： EUV光源装置能够容易地进行EUV光源装置的维护，EUV光源装置能够容易地进行腔室或腔室的一部分的移动，到维护区域的移动以及相对于投影光学元件的高精度放置。 EUV光源装置是通过将激光束施加到室内的目标材料并且将从等离子体辐射的EUV光输入到曝光设备的投影光学器件中来产生等离子体的装置，并且包括用于定位腔室或维护的定位机构 在所述收集的极紫外光的光轴和所述曝光设备的投影光学元件的光轴对准的预定位置处的所述室的单元，以及用于将所述室或所述室的维护单元移动到所述室 预定位置和维护区域。
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10.发明申请APPARATUS FOR AND METHOD OF WITHDRAWING IONS IN EUV LIGHT PRODUCTION APPARATUS 有权在EUV光生产设备中放置离子的方法和方法公开(公告)号：US20090261242A1
公开(公告)日：2009-10-22
申请号：US12406388
申请日：2009-03-18
申请人： Yoshifumi UENO , Osamu WAKABAYASHI , Tamotsu ABE , Akira SUMITANI , Hideo HOSHINO , Akira ENDO , Georg SOUMAGNE
发明人： Yoshifumi UENO , Osamu WAKABAYASHI , Tamotsu ABE , Akira SUMITANI , Hideo HOSHINO , Akira ENDO , Georg SOUMAGNE
CPC分类号： H05G2/003 , G03F7/70033 , G03F7/70858 , G03F7/70916 , G03F7/70983 , G21K1/093 , G21K2201/00 , H05G2/005 , H05G2/008
摘要： An ion withdrawal apparatus that withdraws ions emitted from a plasma in an EUV light production apparatus in which a target at an EUV light production point is irradiated with laser light to be made in a plasma state and the target emits EUV light, the ion withdrawal apparatus which includes: a collector mirror that is disposed in a direction opposite to a laser light incidence direction to collect the EUV light and has a hole for the ions to pass therethrough; magnetic line of force production means that produces a magnetic line of force that is parallel or approximately parallel to the laser light incidence direction at or in the vicinity of the EUV light production point; and ion withdrawal means that is disposed on the opposite side of the collector mirror from the EUV light production point and withdraws the ions.
摘要翻译： 一种离子提取装置，其在EUV光产生装置中从在等离子体状态的激光照射EUV光产生点的靶，并且靶射出EUV光的EUV光产生装置中，从等离子体发射的离子， 其包括：收集器反射镜，其设置在与激光入射方向相反的方向上以收集EUV光，并具有用于离子通过的孔; 磁力线产生装置意味着产生在EUV光产生点处或附近平行或近似平行于激光入射方向的磁力线; 以及离开收集反射镜与EUV光产生点相反的一侧的离子提取装置，并且离子退出。
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