公开(公告)号：US20050053536A1

公开(公告)日：2005-03-10

申请号：US10856064

申请日：2004-05-28

申请人： Hung Chein ,  Hsin-Hsien Wu ,  Shankar Aggarwal ,  Chuen-Jinn Tsai

发明人： Hung Chein ,  Hsin-Hsien Wu ,  Shankar Aggarwal ,  Chuen-Jinn Tsai

IPC分类号： B01D53/14 ,  B01D53/40 ,  B01J8/00

CPC分类号： B01D53/14

摘要： A method for treating waste gas containing acid and/or base, employing fine spray-scrubbing technology for treating the waste gas mentioned above, wherein the scrubbing solution is atomized to generate mists with droplet size of 1 to 100 μm. Another feature of the present invention is to combine the application of surfactant in wet scrubbing technology for treating waste gas containing acids, bases, or both, especially, in a low concentration. Another feature of the present invention is to combine spray tower and/or packed tower and/or other scrubbers vertically/horizontally to get enhanced performance of the conventional control systems.

摘要翻译： 一种处理含有酸和/或碱的废气的方法，采用精细的喷雾洗涤技术处理上述废气，其中洗涤溶液被雾化以产生1至100微米的液滴尺寸的雾。 本发明的另一个特征是将湿表面活性剂在湿式洗涤技术中的应用结合起来，用于处理含酸，碱或二者的废气，特别是低浓度。 本发明的另一个特征是将喷雾塔和/或填充塔和/或其它洗涤器垂直/水平地组合以获得常规控制系统的增强的性能。

公开(公告)号：US20080175763A1

公开(公告)日：2008-07-24

申请号：US12055347

申请日：2008-03-26

申请人： Hung Min Chein ,  Hsin-Hsien Wu ,  Shankar Gopala Aggarwal ,  Chuen-Jinn Tsai

发明人： Hung Min Chein ,  Hsin-Hsien Wu ,  Shankar Gopala Aggarwal ,  Chuen-Jinn Tsai

IPC分类号： B01D53/34

CPC分类号： B01D53/14

摘要： A method for treating waste gas containing acid and/or base, employing fine spray-scrubbing technology for treating the waste gas mentioned above, wherein the scrubbing solution is atomized to generate mists with droplet size of 1 to 100 μm. Another feature of the present invention is to combine the application of surfactant in wet scrubbing technology for treating waste gas containing acids, bases, or both, especially, in a low concentration. Another feature of the present invention is to combine spray tower and/or packed tower and/or other scrubbers vertically/horizontally to get enhanced performance of the conventional control systems.

摘要翻译： 一种处理含有酸和/或碱的废气的方法，采用精细的喷雾洗涤技术处理上述废气，其中洗涤溶液被雾化以产生1至100微米的液滴尺寸的雾。 本发明的另一个特征是将湿表面活性剂在湿式洗涤技术中的应用结合起来，用于处理含酸，碱或二者的废气，特别是低浓度。 本发明的另一个特征是将喷雾塔和/或填充塔和/或其它洗涤器垂直/水平地组合以获得常规控制系统的增强的性能。

公开(公告)号：US09024341B2

公开(公告)日：2015-05-05

申请号：US12912900

申请日：2010-10-27

申请人： Hsiao-Wen Lee ,  Shang-Yu Tsai ,  Tien-Ming Lin ,  Chyi Shyuan Chern ,  Hsin-Hsien Wu ,  Fu-Wen Liu ,  Huai-En Lai ,  Yu-Sheng Tang

发明人： Hsiao-Wen Lee ,  Shang-Yu Tsai ,  Tien-Ming Lin ,  Chyi Shyuan Chern ,  Hsin-Hsien Wu ,  Fu-Wen Liu ,  Huai-En Lai ,  Yu-Sheng Tang

IPC分类号： H01L33/00 ,  H01L33/54 ,  H01L33/44 ,  H01L33/50 ,  H01L33/56

CPC分类号： H01L33/54 ,  H01L33/44 ,  H01L33/504 ,  H01L33/507 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2924/0002 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2933/005 ,  H01L2924/00 ,  H01L2924/00014

摘要： Two or more molded ellipsoid lenses are formed on a packaged LED die by injecting a glue material into a mold over the LED die and curing the glue material. After curing, the refractive index of the lens in contact with the LED die is greater than the refractive index of the lens not directly contacting the LED die. At least one phosphor material is incorporated into the glue material for at least one of the lenses not directly contacting the LED die. The lens directly contacting the LED die may also include one or more phosphor material. A high refractive index coating may be applied between the LED die and the lens.

摘要翻译： 在封装的LED模具上形成两个或多个模制的椭圆体透镜，该胶片通过将胶料注入到LED模具中的模具中并固化胶料。 固化后，与LED芯片接触的透镜的折射率大于不直接接触LED芯片的透镜的折射率。 对于不直接接触LED管芯的透镜中的至少一个，将至少一种磷光体材料结合到胶合材料中。 直接接触LED芯片的透镜还可以包括一种或多种荧光体材料。 可以在LED管芯和透镜之间施加高折射率涂层。

公开(公告)号：US08906712B2

公开(公告)日：2014-12-09

申请号：US13112046

申请日：2011-05-20

申请人： Hsin-Hsien Wu ,  Chyi Shyuan Chern ,  Chun-Lin Chang ,  Ching-Wen Hsiao ,  Kuang-Huan Hsu

发明人： Hsin-Hsien Wu ,  Chyi Shyuan Chern ,  Chun-Lin Chang ,  Ching-Wen Hsiao ,  Kuang-Huan Hsu

IPC分类号： H01L21/00 ,  H01L21/265 ,  H01L33/22 ,  H01L33/32

CPC分类号： H01L33/22 ,  H01L21/2654 ,  H01L21/26546 ,  H01L21/26593 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/32

摘要： A method includes providing an LED element including a substrate and a gallium nitride (GaN) layer disposed on the substrate. The GaN layer is treated. The treatment includes performing an ion implantation process on the GaN layer. The ion implantation process may provide a roughened surface region of the GaN layer. In an embodiment, the ion implantation process is performed at a temperature of less than approximately 25 degrees Celsius. In a further embodiment, the substrate is at a temperature less than approximately zero degrees Celsius during the ion implantation process.

摘要翻译： 一种方法包括提供包括衬底和设置在衬底上的氮化镓（GaN）层）的LED元件。 处理GaN层。 该处理包括在GaN层上执行离子注入工艺。 离子注入工艺可以提供GaN层的粗糙化表面区域。 在一个实施例中，离子注入过程在小于约25摄氏度的温度下进行。 在另一个实施例中，在离子注入过程期间，衬底处于低于约零摄氏度的温度。

公开(公告)号：US08536491B2

公开(公告)日：2013-09-17

申请号：US12409880

申请日：2009-03-24

申请人： Zin-Chang Wei ,  Hsin-Hsien Wu ,  Chun-Lin Chang

发明人： Zin-Chang Wei ,  Hsin-Hsien Wu ,  Chun-Lin Chang

IPC分类号： F27D11/00 ,  H01L21/31 ,  H01L21/44

CPC分类号： H01L21/324 ,  F27B17/0025 ,  H01L21/67109

摘要： A semiconductor furnace suitable for chemical vapor deposition processing of wafers. The furnace includes a thermal reaction chamber having a top, a bottom, a sidewall, and an internal cavity for removably holding a batch of vertically stacked wafers. A heating system is provided that includes a plurality of rotatable heaters arranged and operative to heat the chamber. In one embodiment, spacing between the sidewall heaters is adjustable. The heating system controls temperature variations within the chamber and promotes uniform film deposit thickness on the wafers.

摘要翻译： 适用于晶圆化学气相沉积处理的半导体炉。 该炉包括具有顶部，底部，侧壁和用于可拆卸地保持一批垂直堆叠的晶片的内部空腔的热反应室。 提供了一种加热系统，其包括多个可旋转的加热器，其布置并可操作以加热该腔室。 在一个实施例中，侧壁加热器之间的间隔是可调节的。 加热系统控制室内的温度变化并且促进在晶片上均匀的膜沉积物厚度。

公开(公告)号：US20130089937A1

公开(公告)日：2013-04-11

申请号：US13267025

申请日：2011-10-06

申请人： Chyi Shyuan Chern ,  Hsin-Hsien Wu ,  Chih-Kuang Yu ,  Hung-Yi Kuo

发明人： Chyi Shyuan Chern ,  Hsin-Hsien Wu ,  Chih-Kuang Yu ,  Hung-Yi Kuo

IPC分类号： H01L33/08

CPC分类号： H01L33/62 ,  H01L23/49513 ,  H01L25/0753 ,  H01L33/0095 ,  H01L33/08 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00

摘要： A method of light-emitting diode (LED) packaging includes coupling a number of LED dies to corresponding bonding pads on a sub-mount. A mold apparatus having concave recesses housing LED dies is placed over the sub-mount. The sub-mount, the LED dies, and the mold apparatus are heated in a thermal reflow process to bond the LED dies to the bonding pads. Each recess substantially restricts shifting of the LED die with respect to the bonding pad during the heating.

摘要翻译： 一种发光二极管（LED）封装的方法包括将多个LED管芯耦合到子安装座上的对应焊盘。 具有容纳LED管芯的凹入凹槽的模具装置放置在子安装座上。 子载体，LED管芯和模具装置在热回流过程中被加热以将LED管芯接合到接合焊盘。 每个凹槽在加热期间基本上限制相对于接合焊盘的LED管芯的移位。

公开(公告)号：US20100181500A1

公开(公告)日：2010-07-22

申请号：US12355443

申请日：2009-01-16

申请人： Chun-Lin Chang ,  Zin-Chang Wei ,  Hsin-Hsien Wu

发明人： Chun-Lin Chang ,  Zin-Chang Wei ,  Hsin-Hsien Wu

IPC分类号： H01J37/08

CPC分类号： C30B31/22

摘要： A method comprises pre-cooling a first semiconductor wafer outside of a process chamber, from a temperature at or above 15° C. to a temperature below 5° C. The pre-cooled first wafer is placed inside the process chamber after performing the pre-cooling step. A low-temperature ion implantation is performed on the first wafer after placing the first wafer.

摘要翻译： 一种方法包括将处理室外的第一半导体晶片从等于或高于15℃的温度预先冷却至低于5℃的温度。预冷却的第一晶片在执行预处理之后放置在处理室内部 冷却步骤 在放置第一晶片之后，在第一晶片上进行低温离子注入。

公开(公告)号：US09324624B2

公开(公告)日：2016-04-26

申请号：US13431165

申请日：2012-03-27

申请人： Chyi-Shyuan Chern ,  Hsin-Hsien Wu ,  Yung-Hsin Yang ,  Ching-Hua Chiu

发明人： Chyi-Shyuan Chern ,  Hsin-Hsien Wu ,  Yung-Hsin Yang ,  Ching-Hua Chiu

IPC分类号： G01R31/26 ,  H01L21/66 ,  H01L33/00 ,  H01L33/22

CPC分类号： H01L22/12 ,  H01L22/20 ,  H01L33/0095 ,  H01L33/22

摘要： The present disclosure involves a method of fabricating a light-emitting diode (LED) wafer. The method first determines a target surface morphology for the LED wafer. The target surface morphology yields a maximum light output for LEDs on the LED wafer. The LED wafer is etched to form a roughened wafer surface. Thereafter, using a laser scanning microscope, the method investigates an actual surface morphology of the LED wafer. Afterwards, if the actual surface morphology differs from the target surface morphology beyond an acceptable limit, the method repeats the etching step one or more times. The etching is repeated by adjusting one or more etching parameters.

摘要翻译： 本发明涉及一种制造发光二极管（LED）晶片的方法。 该方法首先确定LED晶片的目标表面形态。 目标表面形态为LED晶圆上的LED产生最大的光输出。 蚀刻LED晶片以形成粗糙的晶片表面。 此后，使用激光扫描显微镜，该方法研究了LED晶片的实际表面形态。 此后，如果实际的表面形态与目标表面形态不同，超过可接受的极限，则该方法重复一次或多次蚀刻步骤。 通过调整一个或多个蚀刻参数重复蚀刻。

公开(公告)号：US08729525B2

公开(公告)日：2014-05-20

申请号：US12547073

申请日：2009-08-25

申请人： Jui-Yi Chu ,  Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chun-Kai Wang ,  Hsin-Hsien Wu ,  Yi-Chieh Lin

发明人： Jui-Yi Chu ,  Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chun-Kai Wang ,  Hsin-Hsien Wu ,  Yi-Chieh Lin

IPC分类号： H01L29/06 ,  H01L33/06

CPC分类号： H01L33/06 ,  H01L33/325

摘要： The present application relates to an opto-electronic device. The opto-electronic device includes an n-cladding layer, a p-cladding layer and a multi-quantum well structure. The multi-quantum well structure is located between the p-cladding layer and the n-cladding layer, and includes a plurality of barrier layers, a plurality of well layers and a barrier tuning layer. The barrier tuning layer is made by doping the barrier layer adjacent to the p-cladding layer with an impurity therein for changing an energy barrier thereof to improve the light extraction efficiency of the opto-electronic device.

摘要翻译： 本申请涉及一种光电器件。 光电器件包括n包层，p包层和多量子阱结构。 多量子阱结构位于p包覆层和n包层之间，并且包括多个势垒层，多个阱层和势垒调整层。 阻挡层调整层是通过将与p型包层相邻的势垒层与其中的杂质掺杂以改变其能量势垒而制成的，以提高光电器件的光提取效率。

公开(公告)号：US08610161B2

公开(公告)日：2013-12-17

申请号：US13253797

申请日：2011-10-05

申请人： Yung-Chang Chen ,  Hsin-Hsien Wu ,  Ming Shing Lee ,  Huai-En Lai ,  Fu-Wen Liu ,  Andy Wu

发明人： Yung-Chang Chen ,  Hsin-Hsien Wu ,  Ming Shing Lee ,  Huai-En Lai ,  Fu-Wen Liu ,  Andy Wu

IPC分类号： H01L33/42

CPC分类号： H01L33/58 ,  H01L24/24 ,  H01L24/82 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2933/0066 ,  H01L2924/00

摘要： An optical emitter includes a Light-Emitting Diode (LED) on a package wafer, transparent insulators, and one or more transparent electrical connectors between the LED die and one or more contact pads on the packaging wafer. The transparent insulators are deposited on the package wafer with LED dies attached using a lithography or a screen printing method. The transparent electrical connectors are deposited using physical vapor deposition, chemical vapor deposition, spin coating, spray coating, or screen printing and may be patterned using a lithography process and etching.

摘要翻译： 光发射器包括在封装晶片上的发光二极管（LED），透明绝缘体以及LED管芯与封装晶片上的一个或多个接触焊盘之间的一个或多个透明电连接器。 透明绝缘体沉积在封装晶圆上，并使用光刻法或丝网印刷法连接LED芯片。 使用物理气相沉积，化学气相沉积，旋涂，喷涂或丝网印刷沉积透明电连接器，并且可以使用光刻工艺和蚀刻来图案化。