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    Wafer supporting system for semiconductor wafers
    4.
    发明申请
    Wafer supporting system for semiconductor wafers 审中-公开
    晶圆支撑系统用于半导体晶圆

    公开(公告)号：US20050147489A1

    公开(公告)日：2005-07-07

    申请号：US10745923

    申请日：2003-12-24

    申请人： Tian-An Chen ,  Daoqiang Lu

    发明人： Tian-An Chen ,  Daoqiang Lu

    IPC分类号： B66C17/08 ,  H01L21/68

    CPC分类号： H01L21/6836 ,  H01L2221/68327

    摘要： The embodiments of the present invention include coating a semiconductor wafer with a polymer layer and attaching the polymer layer to a support substrate with a tape. The tape has at least two adhesive sides, and at least one radiation sensitive side. The radiation sensitive side facilitates release of the tape.

    摘要翻译： 本发明的实施例包括用聚合物层涂覆半导体晶片并且用胶带将聚合物层附着到支撑基板上。 胶带具有至少两个粘合剂侧面和至少一个辐射敏感侧。 辐射敏感侧有利于胶带的释放。

    Method of fabricating a bismaleimide (BMI) ASA sacrifical material for an integrated circuit air gap dielectric
    6.
    发明授权
    Method of fabricating a bismaleimide (BMI) ASA sacrifical material for an integrated circuit air gap dielectric 失效
    制造用于集成电路气隙电介质的双马来酰亚胺（BMI）ASA牺牲材料的方法

    公开(公告)号：US06872654B2

    公开(公告)日：2005-03-29

    申请号：US10330619

    申请日：2002-12-26

    申请人： Tian-An Chen ,  Kevin P. O'Brien

    发明人： Tian-An Chen ,  Kevin P. O'Brien

    IPC分类号： H01L21/312 ,  H01L21/768 ,  H01L21/4763

    CPC分类号： H01L21/7682 ,  H01L21/02118 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/312

    摘要： A method for implementing a bismaleimide (BMI) polymer as a sacrificial material for an integrated circuit air gap dielectric. The method of one embodiment comprises forming a first and second metal interconnect lines on a substrate, wherein at least a portion of the first and second metal interconnect lines extend parallel to one another and wherein a trough is located between the parallel portion of said first and second metal interconnect lines. A layer of bismaleimide is spin coated over the substrate. The layer of bismaleimide is polished with a chemical mechanical polish, wherein the trough remains filled with the bismaleimide. A diffusion layer is formed over the substrate. The substrate is heated to activate a pyrolysis of the bismaleimide. An air gap is formed in the trough in the space vacated by the bismaleimide.

    摘要翻译： 一种用于实现用于集成电路气隙电介质的双马来酰亚胺（BMI）聚合物作为牺牲材料的方法。 一个实施例的方法包括在衬底上形成第一和第二金属互连线，其中第一和第二金属互连线的至少一部分彼此平行延伸，并且其中槽位于所述第一和第二金属互连线的平行部分之间， 第二金属互连线。 将一层双马来酰亚胺旋涂在基材上。 用化学机械抛光剂抛光双马来酰亚胺层，其中槽保持充满双马来酰亚胺。 在衬底上形成扩散层。 加热底物以活化双马来酰亚胺的热解。 在由双马来酰亚胺空出的空间中的槽中形成气隙。