公开(公告)号：US09000584B2

公开(公告)日：2015-04-07

申请号：US13338820

申请日：2011-12-28

申请人： Jing-Cheng Lin ,  Jui-Pin Hung ,  Nai-Wei Liu ,  Yi-Chao Mao ,  Wan-Ting Shih ,  Tsan-Hua Tung

发明人： Jing-Cheng Lin ,  Jui-Pin Hung ,  Nai-Wei Liu ,  Yi-Chao Mao ,  Wan-Ting Shih ,  Tsan-Hua Tung

IPC分类号： H01L23/498 ,  H01L23/31 ,  H01L23/00 ,  H01L21/56

CPC分类号： H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/3128 ,  H01L24/03 ,  H01L24/19 ,  H01L24/20 ,  H01L24/82 ,  H01L2224/0231 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/821 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/00

摘要： The mechanisms of forming a molding compound on a semiconductor device substrate to enable fan-out structures in wafer-level packaging (WLP) are provided. The mechanisms involve covering portions of surfaces of an insulating layer surrounding a contact pad. The mechanisms improve reliability of the package and process control of the packaging process. The mechanisms also reduce the risk of interfacial delamination, and excessive outgassing of the insulating layer during subsequent processing. The mechanisms further improve planarization end-point. By utilizing a protective layer between the contact pad and the insulating layer, copper out-diffusion can be reduced and the adhesion between the contact pad and the insulating layer may also be improved.

摘要翻译： 提供了在半导体器件基板上形成模制化合物以使得晶片级封装（WLP）中的扇出结构能够实现的机制。 这些机构涉及覆盖围绕接触垫的绝缘层的表面的部分。 这些机制提高了包装的可靠性和包装过程的过程控制。 这些机理还降低了界面分层的风险，并且在后续处理过程中绝缘层过度消除气泡。 这些机制进一步改善了平面化终点。 通过利用接触焊盘和绝缘层之间的保护层，可以减少铜外扩散，并且还可以提高接触焊盘和绝缘层之间的粘附。

公开(公告)号：US09064879B2

公开(公告)日：2015-06-23

申请号：US13228244

申请日：2011-09-08

申请人： Jui-Pin Hung ,  Jing-Cheng Lin ,  Nai-Wei Liu ,  Chin-Chuan Chang ,  Chen-Hua Yu ,  Shin-Puu Jeng ,  Chin-Fu Kao ,  Yi-Chao Mao ,  Szu Wei Lu

发明人： Jui-Pin Hung ,  Jing-Cheng Lin ,  Nai-Wei Liu ,  Chin-Chuan Chang ,  Chen-Hua Yu ,  Shin-Puu Jeng ,  Chin-Fu Kao ,  Yi-Chao Mao ,  Szu Wei Lu

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/56 ,  H01L23/14 ,  H01L23/498 ,  H01L23/538 ,  H01L21/683 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/147 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/13 ,  H01L24/19 ,  H01L24/20 ,  H01L24/81 ,  H01L24/96 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68377 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05099 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/11002 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73267 ,  H01L2224/83191 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/3511 ,  H01L2224/11 ,  H01L2224/81 ,  H01L2224/05552 ,  H01L2924/00

摘要： Packaging methods and structures for semiconductor devices that utilize a novel die attach film are disclosed. In one embodiment, a method of packaging a semiconductor device includes providing a carrier wafer and forming a die attach film (DAF) that includes a polymer over the carrier wafer. A plurality of dies is attached to the DAF, and the plurality of dies is packaged. At least the carrier wafer is removed from the packaged dies, and the packaged dies are singulated.

摘要翻译： 公开了利用新颖的芯片附着膜的半导体器件的封装方法和结构。 在一个实施例中，封装半导体器件的方法包括提供载体晶片并且在载体晶片上形成包括聚合物的管芯附着膜（DAF）。 多个模具附接到DAF，并且多个管芯被封装。 至少载体晶片从封装的管芯移除，并且封装的管芯被切割。

公开(公告)号：US20130062760A1

公开(公告)日：2013-03-14

申请号：US13228244

申请日：2011-09-08

申请人： Jui-Pin Hung ,  Jing-Cheng Lin ,  Nai-Wei Liu ,  Chin-Chuan Chang ,  Chen-Hua Yu ,  Shin-Puu Jeng ,  Chin-Fu Kao ,  Yi-Chao Mao ,  Szu Wei Lu

发明人： Jui-Pin Hung ,  Jing-Cheng Lin ,  Nai-Wei Liu ,  Chin-Chuan Chang ,  Chen-Hua Yu ,  Shin-Puu Jeng ,  Chin-Fu Kao ,  Yi-Chao Mao ,  Szu Wei Lu

IPC分类号： H01L23/498 ,  H01L21/60 ,  H01L21/56

CPC分类号： H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/147 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/13 ,  H01L24/19 ,  H01L24/20 ,  H01L24/81 ,  H01L24/96 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68377 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05099 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/11002 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73267 ,  H01L2224/83191 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/3511 ,  H01L2224/11 ,  H01L2224/81 ,  H01L2224/05552 ,  H01L2924/00

摘要： Packaging methods and structures for semiconductor devices that utilize a novel die attach film are disclosed. In one embodiment, a method of packaging a semiconductor device includes providing a carrier wafer and forming a die attach film (DAF) that includes a polymer over the carrier wafer. A plurality of dies is attached to the DAF, and the plurality of dies is packaged. At least the carrier wafer is removed from the packaged dies, and the packaged dies are singulated.

摘要翻译： 公开了利用新颖的芯片附着膜的半导体器件的封装方法和结构。 在一个实施例中，封装半导体器件的方法包括提供载体晶片并且在载体晶片上形成包括聚合物的管芯附着膜（DAF）。 多个模具附接到DAF，并且多个管芯被封装。 至少载体晶片从封装的管芯移除，并且封装的管芯被切割。

公开(公告)号：US09117682B2

公开(公告)日：2015-08-25

申请号：US13270850

申请日：2011-10-11

申请人： Jing-Cheng Lin ,  Jui-Pin Hung ,  Yi-Hang Lin ,  Tsan-Hua Tung

发明人： Jing-Cheng Lin ,  Jui-Pin Hung ,  Yi-Hang Lin ,  Tsan-Hua Tung

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L23/538 ,  H01L23/498

CPC分类号： H01L21/78 ,  H01L21/31051 ,  H01L21/561 ,  H01L21/565 ,  H01L23/293 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/17 ,  H01L24/19 ,  H01L24/96 ,  H01L25/0652 ,  H01L25/50 ,  H01L2224/0231 ,  H01L2224/0237 ,  H01L2224/02379 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05008 ,  H01L2224/05552 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/11002 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/96 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/07025 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00

摘要： Methods of packaging semiconductor devices and structures thereof are disclosed. In one embodiment, a method of packaging a semiconductor device includes providing a carrier wafer, providing a plurality of dies, and forming a die cave material over the carrier wafer. A plurality of die caves is formed in the die cave material. At least one of the plurality of dies is placed within each of the plurality of die caves in the die cave material. A plurality of packages is formed, each of the plurality of packages being formed over a respective at least one of the plurality of dies.

摘要翻译： 公开了封装半导体器件的方法及其结构。 在一个实施例中，一种封装半导体器件的方法包括提供载体晶片，提供多个管芯，以及在载体晶片上形成管芯洞穴材料。 在模具洞穴材料中形成多个模具洞穴。 将多个模具中的至少一个放置在模具洞穴材料中的多个模具洞穴的每一个中。 形成多个封装，所述多个封装中的每个封装形成在所述多个管芯中的相应的至少一个管芯上。

公开(公告)号：US20130087916A1

公开(公告)日：2013-04-11

申请号：US13270850

申请日：2011-10-11

申请人： Jing-Cheng Lin ,  Jui-Pin Hung ,  Yi-Hang Lin ,  Tsan-Hua Tung

发明人： Jing-Cheng Lin ,  Jui-Pin Hung ,  Yi-Hang Lin ,  Tsan-Hua Tung

IPC分类号： H01L23/498 ,  H01L21/60 ,  H01L21/50

CPC分类号： H01L21/78 ,  H01L21/31051 ,  H01L21/561 ,  H01L21/565 ,  H01L23/293 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/17 ,  H01L24/19 ,  H01L24/96 ,  H01L25/0652 ,  H01L25/50 ,  H01L2224/0231 ,  H01L2224/0237 ,  H01L2224/02379 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05008 ,  H01L2224/05552 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/11002 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/96 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/07025 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00

摘要： Methods of packaging semiconductor devices and structures thereof are disclosed. In one embodiment, a method of packaging a semiconductor device includes providing a carrier wafer, providing a plurality of dies, and forming a die cave material over the carrier wafer. A plurality of die caves is formed in the die cave material. At least one of the plurality of dies is placed within each of the plurality of die caves in the die cave material. A plurality of packages is formed, each of the plurality of packages being formed over a respective at least one of the plurality of dies.

公开(公告)号：US20130115854A1

公开(公告)日：2013-05-09

申请号：US13290879

申请日：2011-11-07

申请人： Yi-Chao Mao ,  Jui-Pin Hung ,  Jing-Cheng Lin ,  Shin-Puu Jeng ,  Chen-Hua Yu

发明人： Yi-Chao Mao ,  Jui-Pin Hung ,  Jing-Cheng Lin ,  Shin-Puu Jeng ,  Chen-Hua Yu

IPC分类号： B24B49/10

CPC分类号： H01L22/26 ,  B24B7/228 ,  B24B37/013 ,  B24B49/10 ,  H01L22/12 ,  H01L23/3114 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for performing grinding includes selecting a target wheel loading for wafer grinding processes, and performing a grinding process on a wafer. With the proceeding of the grinding process, wheel loadings of the grinding process are measured. The grinding process is stopped after the target wheel loading is reached. The method alternatively includes selecting a target reflectivity of wafer grinding processes, and performing a grinding process on a wafer. With a proceeding of the grinding process, reflectivities of a light reflected from a surface of the wafer are measured. The grinding process is stopped after one of the reflectivities reaches the target reflectivity.

摘要翻译： 执行磨削的方法包括：选择用于晶片研磨工艺的目标轮加载，以及对晶片进行研磨处理。 随着研磨过程的进行，测量研磨过程的轮载荷。 在达到目标轮加载后停止研磨过程。 该方法或者包括选择晶片研磨过程的目标反射率，以及对晶片进行研磨处理。 随着研磨过程的进行，测量从晶片表面反射的光的反射率。 在一个反射率达到目标反射率之后停止研磨过程。

公开(公告)号：US09960088B2

公开(公告)日：2018-05-01

申请号：US13290879

申请日：2011-11-07

申请人： Yi-Chao Mao ,  Jui-Pin Hung ,  Jing-Cheng Lin ,  Shin-Puu Jeng ,  Chen-Hua Yu

发明人： Yi-Chao Mao ,  Jui-Pin Hung ,  Jing-Cheng Lin ,  Shin-Puu Jeng ,  Chen-Hua Yu

IPC分类号： B24B49/10 ,  H01L21/66 ,  B24B37/013 ,  B24B7/22 ,  H01L23/31

CPC分类号： H01L22/26 ,  B24B7/228 ,  B24B37/013 ,  B24B49/10 ,  H01L22/12 ,  H01L23/3114 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for performing grinding includes selecting a target wheel loading for wafer grinding processes, and performing a grinding process on a wafer. With the proceeding of the grinding process, wheel loadings of the grinding process are measured. The grinding process is stopped after the target wheel loading is reached. The method alternatively includes selecting a target reflectivity of wafer grinding processes, and performing a grinding process on a wafer. With a proceeding of the grinding process, reflectivities of a light reflected from a surface of the wafer are measured. The grinding process is stopped after one of the reflectivities reaches the target reflectivity.

公开(公告)号：US20130001776A1

公开(公告)日：2013-01-03

申请号：US13170973

申请日：2011-06-28

申请人： Chen-Hua Yu ,  Jing-Cheng Lin ,  Nai-Wei Liu ,  Jui-Pin Hung ,  Shin-Puu Jeng

发明人： Chen-Hua Yu ,  Jing-Cheng Lin ,  Nai-Wei Liu ,  Jui-Pin Hung ,  Shin-Puu Jeng

IPC分类号： H01L23/485 ,  H01L21/28

CPC分类号： H01L21/4853 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/78 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49838 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05008 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/73267 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2224/19 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2224/214

摘要： A package includes a device die having a substrate. A molding compound contacts a sidewall of the substrate. A metal pad is over the substrate. A passivation layer has a portion covering an edge portion of the metal pad. A metal pillar is over and contacting the metal pad. A dielectric layer is over the passivation layer. A package material formed of a molding compound or a polymer is over the dielectric layer. The dielectric layer includes a bottom portion between the passivation layer and the package material, and a sidewall portion between a sidewall of the metal pillar and a sidewall of the package material. A polymer layer is over the package material, the molding compound, and the metal pillar. A post-passivation interconnect (PPI) extends into the polymer layer. A solder ball is over the PPI, and is electrically coupled to the metal pad through the PPI.

摘要翻译： 封装包括具有基板的器件裸片。 模塑料与基材的侧壁接触。 金属焊盘在基板上。 钝化层具有覆盖金属焊盘的边缘部分的部分。 金属支柱已经过去并与金属垫接触。 介电层位于钝化层的上方。 由模塑料或聚合物形成的包装材料在电介质层的上面。 电介质层包括位于钝化层和封装材料之间的底部，以及在金属柱的侧壁和封装材料的侧壁之间的侧壁部分。 聚合物层在包装材料，模塑料和金属支柱之上。 后钝化互连（PPI）延伸到聚合物层中。 焊球在PPI上方，并通过PPI电耦合到金属焊盘。

公开(公告)号：US08829676B2

公开(公告)日：2014-09-09

申请号：US13170973

申请日：2011-06-28

申请人： Chen-Hua Yu ,  Jing-Cheng Lin ,  Nai-Wei Liu ,  Jui-Pin Hung ,  Shin-Puu Jeng

发明人： Chen-Hua Yu ,  Jing-Cheng Lin ,  Nai-Wei Liu ,  Jui-Pin Hung ,  Shin-Puu Jeng

IPC分类号： H01L23/485

CPC分类号： H01L21/4853 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/78 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49838 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05008 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/73267 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2224/19 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2224/214

摘要： A package includes a device die having a substrate. A molding compound contacts a sidewall of the substrate. A metal pad is over the substrate. A passivation layer has a portion covering an edge portion of the metal pad. A metal pillar is over and contacting the metal pad. A dielectric layer is over the passivation layer. A package material formed of a molding compound or a polymer is over the dielectric layer. The dielectric layer includes a bottom portion between the passivation layer and the package material, and a sidewall portion between a sidewall of the metal pillar and a sidewall of the package material. A polymer layer is over the package material, the molding compound, and the metal pillar. A post-passivation interconnect (PPI) extends into the polymer layer. A solder ball is over the PPI, and is electrically coupled to the metal pad through the PPI.

摘要翻译： 封装包括具有基板的器件裸片。 模塑料与基材的侧壁接触。 金属焊盘在基板上。 钝化层具有覆盖金属焊盘的边缘部分的部分。 金属支柱已经过去并与金属垫接触。 介电层位于钝化层的上方。 由模塑料或聚合物形成的包装材料在电介质层的上面。 电介质层包括位于钝化层和封装材料之间的底部，以及在金属柱的侧壁和封装材料的侧壁之间的侧壁部分。 聚合物层在包装材料，模塑料和金属支柱之上。 后钝化互连（PPI）延伸到聚合物层中。 焊球在PPI上方，并通过PPI电耦合到金属焊盘。

公开(公告)号：US09691706B2

公开(公告)日：2017-06-27

申请号：US13452140

申请日：2012-04-20

申请人： Chen-Hua Yu ,  Jing-Cheng Lin ,  Jui-Pin Hung

发明人： Chen-Hua Yu ,  Jing-Cheng Lin ,  Jui-Pin Hung

IPC分类号： H01L23/48 ,  H01L23/538 ,  H01L23/00 ,  H01L21/56 ,  H01L23/498 ,  H01L23/544 ,  H01L21/683 ,  H01L23/31

CPC分类号： H01L25/0655 ,  H01L21/31053 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/5386 ,  H01L23/5389 ,  H01L23/544 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/742 ,  H01L24/82 ,  H01L24/92 ,  H01L24/94 ,  H01L24/96 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68331 ,  H01L2223/54426 ,  H01L2224/02311 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/11002 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1184 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/2101 ,  H01L2224/211 ,  H01L2224/214 ,  H01L2224/215 ,  H01L2224/24011 ,  H01L2224/24101 ,  H01L2224/24137 ,  H01L2224/244 ,  H01L2224/24991 ,  H01L2224/82005 ,  H01L2224/82106 ,  H01L2224/8213 ,  H01L2224/82132 ,  H01L2224/92 ,  H01L2224/94 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/82 ,  H01L2224/11 ,  H01L2224/19 ,  H01L2924/00

摘要： A package includes a die having a conductive pad at a top surface of the die, a stud bump over and connected to the conductive pad, and a redistribution line over and connected to the stud bump. An electrical connector is over and electrically coupled to the redistribution line.