End Point Detection in Grinding
    9.
    发明申请
    End Point Detection in Grinding 有权
    研磨中的终点检测

    公开(公告)号:US20130115854A1

    公开(公告)日:2013-05-09

    申请号:US13290879

    申请日:2011-11-07

    IPC分类号: B24B49/10

    摘要: A method for performing grinding includes selecting a target wheel loading for wafer grinding processes, and performing a grinding process on a wafer. With the proceeding of the grinding process, wheel loadings of the grinding process are measured. The grinding process is stopped after the target wheel loading is reached. The method alternatively includes selecting a target reflectivity of wafer grinding processes, and performing a grinding process on a wafer. With a proceeding of the grinding process, reflectivities of a light reflected from a surface of the wafer are measured. The grinding process is stopped after one of the reflectivities reaches the target reflectivity.

    摘要翻译: 执行磨削的方法包括:选择用于晶片研磨工艺的目标轮加载,以及对晶片进行研磨处理。 随着研磨过程的进行,测量研磨过程的轮载荷。 在达到目标轮加载后停止研磨过程。 该方法或者包括选择晶片研磨过程的目标反射率,以及对晶片进行研磨处理。 随着研磨过程的进行,测量从晶片表面反射的光的反射率。 在一个反射率达到目标反射率之后停止研磨过程。