摘要:
A semiconductor component includes a semiconductor chip provided with a passivation layer that covers the topmost interconnect structure of the semiconductor chip whilst leaving contact areas free. The passivation layer is in direct adhesive contact with the plastic housing composition of the semiconductor component. The passivation layer includes a polymer with embedded mineral-ceramic nanoparticles.
摘要:
The invention relates to a semiconductor component (1) comprising a semiconductor chip (3) provided with a passivation layer (2), and to methods for producing the same. In this case, the passivation layer (2) covers the topmost interconnect structure (4) of the semiconductor chip (1) whilst leaving contact areas (5) free. The passivation layer (2) is in direct adhesive contact with the plastic housing composition (6) of the semiconductor component (1), wherein the passivation layer (2) comprises a polymer (7) with embedded mineral-ceramic nanoparticles (8).
摘要:
A power semiconductor component stack, using lead technology with surface-mountable external contacts, includes at least two MOSFET power semiconductor components each having a top side and an underside. The underside includes: a drain external contact area, a source external contact area and a gate external contact area. The top side includes at least one source external contact area and a gate external contact area. The gate external contact areas on the top side and the underside are electrically connected to one another. The power semiconductor component stack is a series circuit or a parallel circuit of MOSFET power semiconductor components arranged one above another in a plastic housing composition.
摘要:
A power semiconductor component stack, using lead technology with surface-mountable external contacts, includes at least two MOSFET power semiconductor components each having a top side and an underside. The underside includes: a drain external contact area, a source external contact area and a gate external contact area. The top side includes at least one source external contact area and a gate external contact area. The gate external contact areas on the top side and the underside are electrically connected to one another. The power semiconductor component stack is a series circuit or a parallel circuit of MOSFET power semiconductor components arranged one above another in a plastic housing composition.
摘要:
In a device (35) and a method a thin organic or inorganic layer is applied to individual component positions of band-like structures (1). The layer can effect improved or optimized adhesion between a coated surface and a plastic housing compound. Furthermore, the layer can be used as a corrosion prevention layer, an electrical insulating layer or as a dielectric for the coated surfaces. For the selective application of the layer, the device (35) has a jet printer (2) having a plurality of electronically controllable jet heads (4-7). The jet printer (2) coats the band-like structures (1) selectively on the upper side (17) in a first coating position (15) and coats the band-like structures (1) selectively on the underside (18) in a second coating position (16).
摘要:
In a device (35) and a method a thin organic or inorganic layer is applied to individual component positions of band-like structures (1). The layer can effect improved or optimized adhesion between a coated surface and a plastic housing compound. Furthermore, the layer can be used as a corrosion prevention layer, an electrical insulating layer or as a dielectric for the coated surfaces. For the selective application of the layer, the device (35) has a jet printer (2) having a plurality of electronically controllable jet heads (4-7). The jet printer (2) coats the band-like structures (1) selectively on the upper side (17) in a first coating position (15) and coats the band-like structures (1) selectively on the underside (18) in a second coating position (16).
摘要:
A circuit package is provided, the circuit package including: an electronic circuit; a metal block next to the electronic circuit; encapsulation material between the electronic circuit and the metal block; a first metal layer structure electrically contacted to at least one first contact on a first side of the electronic circuit; a second metal layer structure electrically contacted to at least one second contact on a second side of the electronic circuit, wherein the second side is opposite to the first side; wherein the metal block is electrically contacted to the first metal layer structure and to the second metal layer structure by means of an electrically conductive medium; and wherein the electrically conductive medium includes a material different from the material of the first and second metal layer structures or has a material structure different from the material of the first and second metal layer structures.
摘要:
In a method of manufacturing a semiconductor device, a first semiconductor element is mounted on a carrier. A b-stage curable polymer is deposited on the carrier. A second semiconductor element is affixed on the polymer.
摘要:
An electronic component includes an electrically conductive carrier. The electrically conductive carrier includes a carrier surface and a semiconductor chip includes a chip surface. One or both of the carrier surface and the chip surface include a non-planar structure. The chip is attached to the carrier with the chip surface facing towards the carrier surface so that a gap is provided between the chip surface and the carrier surface due to the non-planar structure of one or both of the carrier surface and the first chip surface. The electronic component further includes a first galvanically deposited metallic layer situated in the gap.
摘要:
A method for attaching a metal surface to a carrier is provided, the method including: forming a first polymer layer over the metal surface; forming a second polymer layer over a surface of the carrier; and bringing the first polymer layer into physical contact with the second polymer layer such that at least one of an interpenetrating polymer structure and an inter-diffusing polymer structure is formed between the first polymer layer and the second polymer layer.