High aspect ratio metal microstructures and method for preparing the same
    3.
    发明授权
    High aspect ratio metal microstructures and method for preparing the same 失效
    高纵横比金属微结构及其制备方法

    公开(公告)号:US5814414A

    公开(公告)日:1998-09-29

    申请号:US601825

    申请日:1996-02-15

    摘要: High aspect ratio metal microstructures may be prepared by a method involving (i) forming a layer of a photoresist on a substrate; (ii) exposing the layer to actinic radiation in an imagewise manner and developing the exposed layer to obtain a surface which contains regions having no remaining photoresist and regions covered with photoresist; (iii) metallizing the surface to form a layer of metal on the region of the surface having no remaining photoresist and on the sides of the regions of photoresist remaining on the surface; and (iv) optionally, stripping the photoresist remaining on the surface. Such microstructures are useful as electron emitters, anisotropic high dielectric interconnects, masks for x-ray photolithography, carriers for the controlled release of active agents, and ultramicroelectrode arrays.

    摘要翻译: 高纵横比金属微结构可以通过以下方法制备:(i)在基底上形成光致抗蚀剂层; (ii)以成像方式将层暴露于光化辐射并显影曝光层以获得包含没有剩余光致抗蚀剂区域和用光刻胶覆盖的区域的表面; (iii)使表面金属化以在表面区域上形成金属层,该区域上没有剩余的光致抗蚀剂,并且在保留在表面上的光致抗蚀剂区域的侧面上; 和(iv)任选地,剥离残留在表面上的光致抗蚀剂。 这种微结构可用作电子发射体,各向异性高介电互连,用于X射线光刻的掩模,用于控制释放活性剂的载体和超微电极阵列。

    High aspect ratio metal microstructures and method for preparing the same
    4.
    发明授权
    High aspect ratio metal microstructures and method for preparing the same 失效
    高纵横比金属微结构及其制备方法

    公开(公告)号:US5342737A

    公开(公告)日:1994-08-30

    申请号:US874403

    申请日:1992-04-27

    摘要: High aspect ratio metal microstructures may be prepared by a method involving(i) forming a layer of a photoresist on a substrate;(ii) exposing the layer to actinic radiation in an imagewise manner and developing the exposed layer to obtain a surface which contains regions having no remaining photoresist and regions covered with photoresist;(iii) metallizing the surface to form a layer of metal on the region of the surface having no remaining photoresist and on the sides of the regions of photoresist remaining on the surface; and(iv) optionally, stripping the photoresist remaining on the surface.Such microstructures are useful as electron emitters, anisotropic high dielectric interconnects, masks for x-ray photolithography, carriers for the controlled release of active agents, and ultramicroelectrode arrays.

    摘要翻译: 高纵横比金属微结构可以通过以下方法制备:(i)在基底上形成光致抗蚀剂层; (ii)以成像方式将层暴露于光化辐射并显影曝光层以获得包含没有剩余光致抗蚀剂区域和用光刻胶覆盖的区域的表面; (iii)使表面金属化以在表面区域上形成金属层,该区域上没有剩余的光致抗蚀剂,并且在保留在表面上的光致抗蚀剂区域的侧面上; 和(iv)任选地,剥离残留在表面上的光致抗蚀剂。 这种微结构可用作电子发射体,各向异性高介电互连,用于X射线光刻的掩模,用于控制释放活性剂的载体和超微电极阵列。

    Polymers and photoresist compositions comprising same
    9.
    发明授权
    Polymers and photoresist compositions comprising same 失效
    包含其的聚合物和光致抗蚀剂组合物

    公开(公告)号:US5853953A

    公开(公告)日:1998-12-29

    申请号:US706646

    申请日:1996-09-06

    摘要: The invention provides novel polymers and photoresist compositions that comprise a photoactive component and use such polymers as a resin binder component. The polymers of the invention in general comprise at least one repeating unit that includes a moiety that has a high carbon content, and preferably is an aromatic group. Preferred polymers of the invention comprise at least one repeating unit that includes a moiety that is an extended aromatic ring, or polycyclic aromatic ring system containing 2 or more rings, preferably at least two of the rings being fused, and from about 3 to 8 ring members in each ring. Photoresists of the invention include both positive-acting and negative-acting compositions and contain a resin binder component that comprises the described polymer.

    摘要翻译: 本发明提供了包含光活性组分并使用这种聚合物作为树脂粘合剂组分的新型聚合物和光致抗蚀剂组合物。 本发明的聚合物通常包含至少一个重复单元,其包含具有高碳含量的部分,优选为芳族基团。 本发明优选的聚合物包含至少一个包含延伸芳环的部分的重复单元,或含有2个或更多个环的多环芳环体系,优选至少两个稠合的环和约3至8个环 每个戒指的成员 本发明的光致抗蚀剂包括正作用组合物和负效应组合物,并且含有包含所述聚合物的树脂粘合剂组分。