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公开(公告)号：US5079600A
公开(公告)日：1992-01-07
申请号：US182123
申请日：1988-04-14
申请人： Joel M. Schnur , Paul E. Schoen , Martin C. Peckerar , Christie R. K. Marrian , Jeffrey M. Calvert , Jacque H. Georger, Jr.
发明人： Joel M. Schnur , Paul E. Schoen , Martin C. Peckerar , Christie R. K. Marrian , Jeffrey M. Calvert , Jacque H. Georger, Jr.
IPC分类号： B05D1/18 , C09D4/00 , C12N5/00 , C23C18/16 , C40B60/14 , G03F7/004 , G03F7/16 , G06N3/00 , G06N99/00 , H01L21/288 , H05K3/06 , H05K3/18
CPC分类号： G03F7/165 , B05D1/185 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C09D4/00 , C12N5/0068 , C23C18/1608 , C23C18/1612 , C23C18/1893 , G03F7/004 , G06N3/002 , G06N99/007 , H01L21/288 , H01L21/2885 , H01L51/0595 , H05K3/185 , B01J2219/00432 , B01J2219/00603 , B01J2219/00605 , B01J2219/0061 , B01J2219/00612 , B01J2219/00617 , B01J2219/00621 , B01J2219/00626 , B01J2219/0063 , B01J2219/00637 , B01J2219/00659 , B01J2219/00711 , B82Y5/00 , C12N2535/10 , C40B60/14 , Y10T428/12056 , Y10T428/265
摘要： A process for producing metal plated paths on a solid substrate of the kind which has polar functional groups at its surface, utilizing a self-assembling film that is chemically absorbed on the substrate's surface. The solid substrate may, for example, be an insulator of the kind used for substrates in printed circuitry or may, as another example, be a semiconductor of the kind used in semiconductor microcircuitry. The chemical reactivity in regions of the ultra-thin film is altered to produce a desired pattern in the film. A catalytic precursor which adheres only to those regions of the film having enough reactivity to bind the catalyst is applied to the film's surface. The catalyst coated structure is then immersed in an electroless plating bath where metal plates onto the regions activated by the catalyst.
摘要翻译： 一种在其表面具有极性官能团的固体基板上制造金属电镀通道的方法，利用在基板表面上被化学吸附的自组装膜。 固体基材例如可以是用于印刷电路板中的基板的绝缘体，或者作为另一示例，可以是半导体微电路中使用的半导体。 在超薄膜的区域中的化学反应性被改变以在膜中产生所需的图案。 仅将粘合有具有足够反应性的膜结合催化剂的区域的催化前体施加到膜的表面。 然后将催化剂涂覆的结构浸入其中金属板的化学镀浴中到由催化剂活化的区域上。
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2.发明授权
公开(公告)号：US5077085A
公开(公告)日：1991-12-31
申请号：US22439
申请日：1987-03-06
申请人： Joel M. Schnur , Paul E. Schoen , Martin C. Peckerar , Christie R. K. Marrian , Jeffrey M. Calvert , Jacque H. Georger, Jr.
发明人： Joel M. Schnur , Paul E. Schoen , Martin C. Peckerar , Christie R. K. Marrian , Jeffrey M. Calvert , Jacque H. Georger, Jr.
CPC分类号： G06N99/007 , B05D1/185 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C09D4/00 , C23C18/1608 , C23C18/1612 , C23C18/1882 , G06N3/002 , H01L21/288 , H01L21/2885 , H05K3/185 , B01J2219/00432 , B01J2219/00603 , B01J2219/00605 , B01J2219/0061 , B01J2219/00612 , B01J2219/00617 , B01J2219/00637 , B01J2219/00659 , B01J2219/00711 , B82Y5/00 , C12N2535/10 , C40B60/14
摘要： A process for producing metal plated paths on a solid substrate of the kind which has polar functional groups at its surface utilizes a self-assembling monomolecular film that is chemically adsorbed on the substrate's surface. The solid substrate may, for example, be an insulator of the kind used for substrates in printed circuitry or may, as another example, be a semiconductor of the kind used in semiconductor microcircuitry. The chemical reactivity in regions of the ultra-thin film is altered to produce a desired pattern in the film. A catalytic precursor which adheres only to those regions of the film having enough reactivity to bind the catalyst is applied to the film's surface. The catalyst coated structure is then immersed in an electrolers plating bath where metal plates onto the regions activated by the catalyst.
摘要翻译： 在其表面上具有极性官能团的固体基板上制造金属电镀路径的方法利用化学吸附在基板表面上的自组装单分子膜。 固体基材例如可以是用于印刷电路板中的基板的绝缘体，或者作为另一示例，可以是半导体微电路中使用的半导体。 在超薄膜的区域中的化学反应性被改变以在膜中产生所需的图案。 仅将粘合有具有足够反应性的膜结合催化剂的区域的催化前体施加到膜的表面。 然后将催化剂涂覆的结构浸入其中金属板的电极电镀浴到由催化剂活化的区域上。
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3.发明授权
公开(公告)号：US5814414A
公开(公告)日：1998-09-29
申请号：US601825
申请日：1996-02-15
申请人： Jacque H. Georger, Jr. , Martin C. Peckerar , Milton L. Rebbert , Jeffrey M. Calvert , James J. Hickman
发明人： Jacque H. Georger, Jr. , Martin C. Peckerar , Milton L. Rebbert , Jeffrey M. Calvert , James J. Hickman
CPC分类号： G03F7/00 , G03F1/22 , G03F7/40 , Y10S414/123 , Y10S428/923 , Y10T428/12292
摘要： High aspect ratio metal microstructures may be prepared by a method involving (i) forming a layer of a photoresist on a substrate; (ii) exposing the layer to actinic radiation in an imagewise manner and developing the exposed layer to obtain a surface which contains regions having no remaining photoresist and regions covered with photoresist; (iii) metallizing the surface to form a layer of metal on the region of the surface having no remaining photoresist and on the sides of the regions of photoresist remaining on the surface; and (iv) optionally, stripping the photoresist remaining on the surface. Such microstructures are useful as electron emitters, anisotropic high dielectric interconnects, masks for x-ray photolithography, carriers for the controlled release of active agents, and ultramicroelectrode arrays.
摘要翻译： 高纵横比金属微结构可以通过以下方法制备：（i）在基底上形成光致抗蚀剂层; （ii）以成像方式将层暴露于光化辐射并显影曝光层以获得包含没有剩余光致抗蚀剂区域和用光刻胶覆盖的区域的表面; （iii）使表面金属化以在表面区域上形成金属层，该区域上没有剩余的光致抗蚀剂，并且在保留在表面上的光致抗蚀剂区域的侧面上; 和（iv）任选地，剥离残留在表面上的光致抗蚀剂。 这种微结构可用作电子发射体，各向异性高介电互连，用于X射线光刻的掩模，用于控制释放活性剂的载体和超微电极阵列。
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4.发明授权
公开(公告)号：US5342737A
公开(公告)日：1994-08-30
申请号：US874403
申请日：1992-04-27
申请人： Jacque H. Georger, Jr. , Martin C. Peckerar , Milton L. Rebbert , Jeffrey M. Calvert , James J. Hickman
发明人： Jacque H. Georger, Jr. , Martin C. Peckerar , Milton L. Rebbert , Jeffrey M. Calvert , James J. Hickman
CPC分类号： G03F7/00 , G03F1/22 , G03F7/40 , Y10S414/123 , Y10S428/923 , Y10T428/12292
摘要： High aspect ratio metal microstructures may be prepared by a method involving(i) forming a layer of a photoresist on a substrate;(ii) exposing the layer to actinic radiation in an imagewise manner and developing the exposed layer to obtain a surface which contains regions having no remaining photoresist and regions covered with photoresist;(iii) metallizing the surface to form a layer of metal on the region of the surface having no remaining photoresist and on the sides of the regions of photoresist remaining on the surface; and(iv) optionally, stripping the photoresist remaining on the surface.Such microstructures are useful as electron emitters, anisotropic high dielectric interconnects, masks for x-ray photolithography, carriers for the controlled release of active agents, and ultramicroelectrode arrays.
摘要翻译： 高纵横比金属微结构可以通过以下方法制备：（i）在基底上形成光致抗蚀剂层; （ii）以成像方式将层暴露于光化辐射并显影曝光层以获得包含没有剩余光致抗蚀剂区域和用光刻胶覆盖的区域的表面; （iii）使表面金属化以在表面区域上形成金属层，该区域上没有剩余的光致抗蚀剂，并且在保留在表面上的光致抗蚀剂区域的侧面上; 和（iv）任选地，剥离残留在表面上的光致抗蚀剂。 这种微结构可用作电子发射体，各向异性高介电互连，用于X射线光刻的掩模，用于控制释放活性剂的载体和超微电极阵列。
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5.发明授权
公开(公告)号：US5575888A
公开(公告)日：1996-11-19
申请号：US422102
申请日：1995-04-14
IPC分类号： C23F4/00 , H01L21/3213 , H01L21/3205
CPC分类号： H01L21/32136 , C23F4/00
摘要： Sidewalls in a pattern of a refractory metal on a substrate are passivated during plasma etching by introducing water vapor into the etching chamber. This process obtains nearly vertical sidewalls. In one exemplified embodiment, a pattern of tungsten on a chromium etch step layer was reactive ion etched. In that embodiment, the reactive ion etching was intermittently paused. After each pause, the workpiece was warmed from below about 20.degree. C. to about room temperature. Then, water vapor was introduced into the etching chamber housing the workpiece. After the water vapor was introduced, the workpiece was cooled to below about 20.degree. C. and reactive ion etching was resumed. Alternatively, water vapor can be introduced into the etching chamber continuously during plasma etching.
摘要翻译： 通过将水蒸汽引入蚀刻室，在等离子体蚀刻期间，将基板上难熔金属图案的侧壁钝化。 该过程获得几乎垂直的侧壁。 在一个示例性实施例中，铬蚀刻步骤层上的钨的图案被反应离子蚀刻。 在该实施例中，反应离子蚀刻被间歇地暂停。 每次暂停后，将工件从低于约20℃升温至约室温。 然后，将水蒸汽引入到容纳工件的蚀刻室中。 引入水蒸气后，将工件冷却至低于约20℃，并恢复反应离子蚀刻。 或者，可以在等离子体蚀刻期间连续地将水蒸汽引入蚀刻室。
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公开(公告)号：US4849925A
公开(公告)日：1989-07-18
申请号：US144141
申请日：1988-01-15
CPC分类号： G06G7/1928 , G06N3/0635
摘要： Disclosed are two modifications of the Tank-Hopfield circuit, each of which enables the deconvolution of a signal in the presence of noise. In each embodiment, the Tank-Hopfield circuit is modified so that the equation for total circuit energy reduces to one term representing convolution and another information theoretic (or Shannon) entropy. Thus, in finding its global minimum energy state, each modified circuit inherently identifies an optimal estimate of a deconvoluted input signal without noise.
摘要翻译： 公开了Tank-Hopfield电路的两个修改，每个都能够在存在噪声的情况下对信号进行去卷积。 在每个实施例中，修改了Tank-Hopfield电路，使得总电路能量的方程式减少到表示卷积和另一个信息理论（或Shannon）熵的一个项。 因此，在找到其全局最小能量状态时，每个修改的电路固有地识别无噪声的去卷积输入信号的最佳估计。
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公开(公告)号：US5825040A
公开(公告)日：1998-10-20
申请号：US774063
申请日：1996-12-23
IPC分类号： H01J37/302
CPC分类号： H01J37/3026 , H01J2237/31764 , H01J2237/31769
摘要： A method and apparatus for bonding a layer of coating material onto a subate with minimal bulk heating of the substrate. A pulsed electron beam generator is used to produce high energy electrons at the beginning of the pulse and a larger number of lower energy electrons at the end of the pulse. A thin sacrificial or ablative layer of an easily-vaporized material such as tin is placed on top the coating. The high energy electrons penetrate through the ablative and coating layers. The ablative layer is heated to a molten state, causing it to vaporize. The ablation process generates a force on the coating layer which drives it into the substrate.
摘要翻译： 一种用于以最小的衬底体积加热将涂层材料层结合到衬底上的方法和装置。 脉冲电子束发生器用于在脉冲开始时产生高能电子，在脉冲结束时使用较大数量的较低能量的电子。 将易于蒸发的材料（例如锡）的薄牺牲层或烧蚀层放置在涂层的顶部。 高能电子穿过烧蚀层和涂层。 将烧蚀层加热至熔融状态，使其蒸发。 消融过程在涂层上产生一个力，将其驱动到衬底中。
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公开(公告)号：US06392242B1
公开(公告)日：2002-05-21
申请号：US09320673
申请日：1999-05-27
申请人： F. Keith Perkins , Daniel McCarthy , Martin C. Peckerar , Christie R. K. Marrian , Eric S. Snow
发明人： F. Keith Perkins , Daniel McCarthy , Martin C. Peckerar , Christie R. K. Marrian , Eric S. Snow
IPC分类号： G01I100
CPC分类号： H01J37/3045 , H01J2237/30438
摘要： A fiducial beam monitor includes a patterned diode layer on a semiconducting substrate. An electrical field between the diode (or diodes) on the diode layer and the semiconducting substrate modulates the size of the depletion layer formed by the diode or diode. A high energy beam incident upon a diode on the diode layer produces a greater current than a high energy beam incident upon a non-diodic region of the same layer. In use, the beam monitor is typically fixed to the backside of a workpiece such as a semitransparent membrane being patterned by a focused high energy beam that is translated with respect to workpiece and attached monitor. The changes in current during translation are then correlated with the position of the beam with respect to the pattern on the diode layer.
摘要翻译： 基准光束监视器包括在半导体衬底上的图案化二极管层。 二极管层上的二极管（或二极管）和半导体衬底之间的电场调制由二极管或二极管形成的耗尽层的尺寸。 入射到二极管层上的二极管上的高能束产生比入射在同一层的非二极区上的高能量束更大的电流。 在使用中，光束监视器通常固定在工件的背面，例如通过相对于工件和连接的监视器平移的聚焦的高能量光束来图案化的半透明膜。 然后平移过程中的电流变化与二极管层上图案的光束位置相关。
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公开(公告)号：US06017658A
公开(公告)日：2000-01-25
申请号：US882226
申请日：1992-05-13
CPC分类号： G03F1/78 , G03F1/22 , G03F7/2061 , G03F7/2063 , H01J2237/31794
摘要： Improvement in resolution in terms of minimum feature sizes and proximity fects in an electronic mask is attained by making the mask using a high voltage electron beam which deflects or blocks backscattered electrons. The novel mask structure comprises a transparent support, an absorber layer disposed on said support, a dielectric layer disposed on said absorber layer, and a resist layer disposed on said dielectric layer. It is the dielectric layer which is credited for improving resolution in said mask which can be used a multiple number of times in printing a pattern for various applications, including electronic devices and integrated circuits.
摘要翻译： 通过使用偏转或阻挡反向散射电子的高电压电子束来制造掩模来实现电子掩模中的最小特征尺寸和邻近效应的分辨率的改善。 新颖的掩模结构包括透明支撑体，设置在所述支撑体上的吸收层，设置在所述吸收层上的电介质层和设置在所述介电层上的抗蚀剂层。 介电层被认为用于提高所述掩模中的分辨率，其可以多次打印用于各种应用的图案，包括电子器件和集成电路。
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公开(公告)号：US5336892A
公开(公告)日：1994-08-09
申请号：US882230
申请日：1992-05-13
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F7/2061 , H01J2237/31769 , H01J2237/31796
摘要： Improvement of resolution in terms of reducing minimum feature sizes and ximity effects on bulk substrates in high voltage electron beam lithography as applied to manufacture of electronic circuits from coated semiconductors involves the use of a dielectric layer interposed between an electrically semiconducting substrate and a resist layer. The dielectric layer functions to reduce the resist exposure resulting from the backscattered electrons coming from the substrate into the resist layer.
摘要翻译： 在应用于从涂覆的半导体制造电子电路的高电压电子束光刻中减小最小特征尺寸和邻近效应方面的分辨率的改进涉及使用介于电半导体衬底和抗蚀剂层之间的电介质层。 介电层起到减少从衬底进入抗蚀剂层的后向散射电子产生的抗蚀剂曝光。
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