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    Semiconductor device having a field effect transistor and a method of manufacturing such a device
    1.
    发明授权
    Semiconductor device having a field effect transistor and a method of manufacturing such a device 有权
    具有场效应晶体管的半导体器件及其制造方法

    公开(公告)号：US06420755B1

    公开(公告)日：2002-07-16

    申请号：US09709663

    申请日：2000-11-10

    申请人： Johannes Bloos ,  Antonius Waltherus Jacobus Petrus Den Boer ,  Erik Cornelis Egbertus Van Grunsven ,  Jacob Klerk ,  Marc Andre De Samber ,  Johannus Wilhelmus Weekamp

    发明人： Johannes Bloos ,  Antonius Waltherus Jacobus Petrus Den Boer ,  Erik Cornelis Egbertus Van Grunsven ,  Jacob Klerk ,  Marc Andre De Samber ,  Johannus Wilhelmus Weekamp

    IPC分类号： H01L2976

    CPC分类号： H01L29/80 ,  H01L23/481 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2924/0002 ,  H01L2924/13091 ,  H01L2224/05552 ,  H01L2924/00

    摘要： A field effect transistor (T) of the (quasi-)vertical type, which means that in the semiconductor body (10) of the transistor (T), a source (1) and a drain (3) are positioned (approximately) above each other and are separated from each other by the channel region (2), which is connected to a gate region (4), each one of said regions being connected to a connection conductor (6, 7, 11) joining a connection region (7, 8, 12). The connection regions (7, 8) of the source (1) and the gate (4) are situated on top of the semiconductor body (10). The semiconductor body (10) is provided with a through-hole (9) at least one wall of which is covered with a conductive layer (11), which is connected to the drain (3), and which forms the connection conductor (11) of the drain (3) and which is connected to the connection region (12) for the drain (3) situated on top of the semiconductor body (10). In this way, the transistor (T) is very well suited for surface mounting and is also very easy to manufacture. The through-hole (9) can be made by means of a cheap technique, such as laser cutting or sandblasting. Moreover, the transistor (T) is insensitive to the thickness of the channel region (2), which, in addition, may be comparatively thick. This simplifies the manufacture thereof and renders the transistor (T) suitable for both high power and high voltage applications. An additional advantage is that the transistor (T) can be manufactured without using a comparatively expensive epitaxial process.

    摘要翻译： （准）垂直型的场效应晶体管（T），这意味着在晶体管（T）的半导体本体（10）中，源（1）和漏极（3）位于（大约）上方 彼此分离，并且通过连接到栅极区域（4）的沟道区域（2）彼此分离，每个所述区域连接到连接导体（6,7,11），所述连接导体（6,7,11）连接到连接区域 7,8,12）。 源极（1）和栅极（4）的连接区域（7,8）位于半导体本体（10）的顶部。 半导体本体（10）设置有通孔（9），其至少一个壁被导电层（11）覆盖，该导电层连接到漏极（3），并形成连接导体（11） ），并且连接到位于半导体本体（10）的顶部上的用于漏极（3）的连接区域（12）。 以这种方式，晶体管（T）非常适合于表面安装，并且也非常容易制造。 通孔（9）可以通过诸如激光切割或喷砂的廉价技术制成。 此外，晶体管（T）对沟道区域（2）的厚度不敏感，此外，其可以相对较厚。 这简化了其制造，并且使晶体管（T）适合于高功率和高电压应用。 另外的优点是可以在不使用相对昂贵的外延工艺的情况下制造晶体管（T）。

    Method of manufacturing a semiconductor device and semiconductor device
    2.
    发明授权
    Method of manufacturing a semiconductor device and semiconductor device 有权
    制造半导体器件和半导体器件的方法

    公开(公告)号：US06878573B2

    公开(公告)日：2005-04-12

    申请号：US10480113

    申请日：2002-06-17

    申请人： Johannus Wilhelmus Weekamp ,  Marc Andre De Samber ,  Durandus Kornelius Dijken

    发明人： Johannus Wilhelmus Weekamp ,  Marc Andre De Samber ,  Durandus Kornelius Dijken

    IPC分类号： H01L23/28 ,  H01L21/48 ,  H01L21/56 ,  H01L23/051 ,  H01L23/12 ,  H01L23/29 ,  H01L23/31 ,  H01L23/538 ,  H01L23/66 ,  H01L25/065 ,  H01L21/44

    CPC分类号： H01L23/3107 ,  H01L21/56 ,  H01L23/051 ,  H01L23/66 ,  H01L25/0652 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/051 ,  H01L2224/05571 ,  H01L2224/056 ,  H01L2224/16 ,  H01L2924/01079 ,  H01L2924/1423 ,  H01L2924/00014

    摘要： The invention relates to a method of manufacturing a semiconductor device (10), wherein a semiconductor element (1) provided with a number of connection regions (2) is fitted between a first, electroconductive plate (3) and a second plate (4), wherein two connection conductors (3A, 3B) are formed, from the first plate (3), for the two connection regions (2A, 2B) of the element (1), wherein a passivating encapsulation (5) is provided between the plates (3, 4) and around the element (1), and wherein the device (10) is formed by applying a mechanical separating technique in two mutually perpendicular directions (L, M).In a method according to the invention, the connection conductors (3A, 3B) are formed by providing a mask (6) on the first conducting plate (3) in such a manner that a part (3C) of the plate (3) situated between the connection regions (2A, 2B) remains exposed, which part is subsequently removed by etching. Such a method enables a very compact discrete or at least semi-discrete semiconductor device (10) to be readily obtained at low cost, while a high yield is achieved. In a preferred embodiment, also further parts (3D) of the conducting plate (3) situated at the location where the device (10) is to be sawn, cut or broken remain uncovered by the mask (6) and are removed during etching.

    摘要翻译： 本发明涉及一种制造半导体器件（10）的方法，其中在第一导电板（3）和第二板（4）之间安装设有多个连接区域（2）的半导体元件（1） ，其中，对于所述元件（1）的两个连接区域（2A，2B），从所述第一板（3）形成两个连接导体（3A，3B），其中在所述板之间设置钝化封装（5） （3,4）并且围绕所述元件（1），并且其中所述装置（10）通过在两个相互垂直的方向（L，M）上施加机械分离技术而形成。在根据本发明的方法中，连接导体 （3A，3B）通过在第一导电板（3）上设置掩模（6）而形成，使得位于连接区域（2A，2B）之间的板（3）的部分（3C）保持暴露 ，随后通过蚀刻去除该部分。 这种方法使得能够以低成本容易地获得非常紧凑的离散或至少半分立半导体器件（10），同时实现高产率。 在优选实施例中，位于设备（10）将被锯，切割或断裂的位置处的导电板（3）的另外的部分（3D）保持未被掩模（6）覆盖，并且在蚀刻期间被移除。

    Electrode-type heat sink
    3.
    发明授权
    Electrode-type heat sink 有权
    电极式散热片

    公开(公告)号：US07105922B2

    公开(公告)日：2006-09-12

    申请号：US11065564

    申请日：2005-02-24

    申请人： Johannus Wilhelmus Weekamp ,  Marc Andre De Samber ,  Durandus Kornelius Dijken

    发明人： Johannus Wilhelmus Weekamp ,  Marc Andre De Samber ,  Durandus Kornelius Dijken

    IPC分类号： H01L23/34

    CPC分类号： H01L23/3107 ,  H01L21/56 ,  H01L23/051 ,  H01L23/66 ,  H01L25/0652 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/051 ,  H01L2224/05571 ,  H01L2224/056 ,  H01L2224/16 ,  H01L2924/01079 ,  H01L2924/1423 ,  H01L2924/00014

    摘要： The invention relates to a method of manufacturing a semiconductor device (10), wherein a semiconductor element (1) provided with a number of connection regions (2) is fitted between a first, electroconductive plate (3) and a second plate (4), wherein two connection conductors (3A, 3B) are formed, from the first plate (3), for the two connection regions (2A, 2B) of the element (1), wherein a passivating encapsulation (5) is provided between the plates (3, 4) and around the element (1), and wherein the device (10) is formed by applying a mechanical separating technique in two mutually perpendicular directions (L, M).In a method according to the invention, the connection conductors (3A, 3B) are formed by providing a mask (6) on the first conducting plate (3) in such a manner that a part (3C) of the plate (3) situated between the connection regions (2A, 2B) remains exposed, which part is subsequently removed by etching. Such a method enables a very compact discrete or at least semi-discrete semiconductor device (10) to be readily obtained at low cost, while a high yield is achieved. In a preferred embodiment, also further parts (3D) of the conducting plate (3) situated at the location where the device (10) is to be sawn, cut or broken remain uncovered by the mask (6) and are removed during etching.

    摘要翻译： 本发明涉及一种制造半导体器件（10）的方法，其中在第一导电板（3）和第二板（4）之间安装设有多个连接区域（2）的半导体元件（1） ，其中，对于所述元件（1）的两个连接区域（2A，2B），从所述第一板（3）形成两个连接导体（3A，3B），其中钝化封装（5）为 设置在板（3,4）之间并且围绕元件（1），并且其中通过在两个相互垂直的方向（L，M）上施加机械分离技术来形成装置（10）。 在根据本发明的方法中，连接导体（3A，3B）通过在第一导电板（3）上设置掩模（6）而形成，使得板的部分（3C） 位于连接区域（2A，2B）之间的3）保持暴露，随后通过蚀刻去除该部分。 这种方法使得能够以低成本容易地获得非常紧凑的离散或至少半分立半导体器件（10），同时实现高产率。 在优选实施例中，位于设备（10）被锯，切割或断裂的位置处的导电板（3）的另外的部分（3D）保持未被掩模（6）覆盖，并且在蚀刻期间被移除 。

    Electronic device having an electronic component with a multi-layer cover, and method
    5.
    发明授权
    Electronic device having an electronic component with a multi-layer cover, and method 有权
    具有多层覆盖层的电子部件的电子设备及方法

    公开(公告)号：US06621163B2

    公开(公告)日：2003-09-16

    申请号：US10169498

    申请日：2002-07-03

    申请人： Johannus Wilhelmus Weekamp ,  Jorrit Jorritsma ,  Edwin Petrus Alois Maria Tijssen ,  Marc Andre De Samber

    发明人： Johannus Wilhelmus Weekamp ,  Jorrit Jorritsma ,  Edwin Petrus Alois Maria Tijssen ,  Marc Andre De Samber

    IPC分类号： H01L2348

    CPC分类号： H03H9/1092 ,  H01L2224/11 ,  H01L2924/00014 ,  H03H9/0547 ,  H05K3/284 ,  H05K3/3452 ,  H01L2224/0401

    摘要： An electronic device includes an electronic component 2, 3, such as a SAW (=Surface Acoustic Wave) filter 2, 3 having connection areas 4, 5. The filter 2, 3 is sealed off from the environment by means of a cover 6 forming a cavity 7 above the filter 2, 3. According to the invention, the cover 6 is formed by a lacquer layer 6A which is provided, at the location of the filter 2, 3, with an opening 7′ and which is covered with a photoresist layer 6B closing the opening 7′ such that the cavity 7 thus formed has a thickness above zero everywhere above the filter 2, 3. This enables an accurate and stable frequency selection by means of the filter 2, 3 and allows the device according to the invention to be very compact and easy to manufacture. Thus, the device according to the invention is very suitable for use in an application such as a mobile telephone, also after integration of the device with a semiconductor device. The photoresist layer 6B and the lacquer layer 6A preferably contain further openings 8, at the location of the connection regions 4, 5, which are provided with bumps 9, preferably solder bumps 9. Preferably, the photoresist layer 6B includes a solid foil 6B, which is solder-repellent.

    摘要翻译： 电子设备包括电子部件2,3，例如具有连接区域4,5的SAW（=表面声波）滤波器2,3。过滤器2,3通过形成的盖6与环境密封 在过滤器2,3上方的空腔7.根据本发明，盖6由涂层6A形成，该漆层6A在过滤器2,3的位置处设置有开口7'，并且覆盖有 光致抗蚀剂层6B封闭开口7'，使得如此形成的空腔7的厚度在滤波器2,3之上的任何地方均具有高于零的厚度。这使得能够通过滤波器2,3准确稳定的频率选择，并允许根据 本发明非常紧凑，易于制造。 因此，根据本发明的装置在将装置与半导体装置集成之后也非常适用于诸如移动电话的应用。 光致抗蚀剂层6B和漆层6A优选地在连接区域4,5的位置处包含另外的开口8，所述连接区域4,5设置有凸起9，优选为焊料凸块9.优选地，光致抗蚀剂层6B包括固体箔6B， 这是阻燃剂。

    Opto-electronic input device, method of manufacturing such a device and method of measuring the movement of an object by means of such a device
    7.
    发明授权
    Opto-electronic input device, method of manufacturing such a device and method of measuring the movement of an object by means of such a device 有权
    光电输入装置，制造这种装置的方法以及通过这种装置测量物体运动的方法

    公开(公告)号：US07714835B2

    公开(公告)日：2010-05-11

    申请号：US10558719

    申请日：2004-05-24

    申请人： Marc Andre De Samber ,  Roger A. Vranken ,  Johannus Wilhelmus Weekamp

    发明人： Marc Andre De Samber ,  Roger A. Vranken ,  Johannus Wilhelmus Weekamp

    IPC分类号： G09G5/00

    CPC分类号： G06F3/03547 ,  G06F3/0421

    摘要： The invention relates to an opto-electronic input device (10), wherein the input is formed by detected movements of an object (M), which opto-electronic input device is provided with an optical module (11) comprising at least one laser (1) mounted on a carrier plate (4), which laser emits a radiation beam (S) that is guided to a plate (V) close to the object (M) and, after reflection therefrom, causes a change in the resonant cavity of the laser (1) which is representative of the movement of the object (M), and which is measured within the module (11). According to the invention, the plate (V) close to the object (M) comprises, within a projection of the object (M), a first portion (VI) through which the beam (S) can pass and which has a fixed position with respect to the carrier plate (4), and a second portion (V2) which is movable in a direction perpendicular to the carrier plate (4) and which comprises signal means which, when they are moved, provide a signal that is observable by a user of the device (10). In this way, the device (10) provides feedback to a human user through his tactile sense and preferably also through his auditory sense. The invention also comprises a method of manufacturing such a device and a method of inputting the movement of an object (M) using such a device.

    摘要翻译： 本发明涉及一种光电输入设备（10），其中通过物体（M）的检测到的移动来形成输入，该光电输入设备设置有包括至少一个激光器的光学模块（11） 1），其安装在载体板（4）上，该激光器发射被引导到靠近物体（M）的板（V）的辐射束（S），并且在其反射之后，谐振腔 激光器（1），其代表物体（M）的移动，并且在模块（11）内测量。 根据本发明，靠近物体（M）的板（V）在物体（M）的突出部内包括第一部分（VI），梁（S）可以穿过该第一部分（VI）并具有固定位置 和相对于承载板（4）的第二部分（V2），以及可沿垂直于承载板（4）的方向移动的第二部分（V2），并且包括信号装置，当信号装置移动时，提供可被 设备（10）的用户。 以这种方式，设备（10）通过他的触觉来优选地通过他的听觉来向人类用户提供反馈。 本发明还包括制造这种装置的方法和使用这种装置输入物体（M）的运动的方法。

    Light Emitting Diode Module
    9.
    发明申请
    Light Emitting Diode Module 审中-公开
    发光二极管模块

    公开(公告)号：US20080278061A1

    公开(公告)日：2008-11-13

    申请号：US11570906

    申请日：2005-06-23

    申请人： Marc Andre De Samber ,  Christoph Gerard August Hoelen ,  Eric Cornelis Egbertus Van Grunsven ,  Koen Van Os

    发明人： Marc Andre De Samber ,  Christoph Gerard August Hoelen ,  Eric Cornelis Egbertus Van Grunsven ,  Koen Van Os

    IPC分类号： H01L33/00

    CPC分类号： H01L25/167 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2224/0401

    摘要： The present invention relates to a LED module (10) comprising a substrate (12), at least one LED chip (20) mounted on a first side of said substrate, and an optical element (21) covering the LED chip(s) (20). The substrate (12) is further provided with at least one via channel (22) extending from the first side of the substrate to a second opposite side of the substrate, whereby the via channel(s) is provided with conducting means for electrically connecting the at least one LED chip (20) to a control circuit (32). By providing the substrate with via channels with conducting means, the control circuit may be connected at the second side (the bottom side) or at the edge of the substrate. Thus, no top mounted electrical interface is required from the substrate, which is advantageous with respect to miniaturization, light emission, etcetera.

    摘要翻译： 本发明涉及一种LED模块（10），其包括基板（12），安装在所述基板的第一侧上的至少一个LED芯片（20）和覆盖所述LED芯片的光学元件（21） 20）。 衬底（12）还设置有从衬底的第一侧延伸到衬底的第二相对侧的至少一个通孔（22），由此通孔通道设置有用于电连接 至少一个LED芯片（20）连接到控制电路（32）。 通过为基板提供具有导电装置的通孔，控制电路可以在基板的第二侧（底侧）或边缘处连接。 因此，从衬底不需要顶部安装的电接口，这对于小型化，发光等是有利的。