Apparatus for dry-surface cleaning using a laser
    1.
    发明申请
    Apparatus for dry-surface cleaning using a laser 审中-公开
    使用激光干燥表面清洁的设备

    公开(公告)号:US20060108330A1

    公开(公告)日:2006-05-25

    申请号:US11194445

    申请日:2005-08-02

    CPC classification number: C21D10/005 B08B7/0042

    Abstract: A dry-surface cleaning apparatus includes a laser for generating laser beams, a focus lens for generating a plasma shock wave around a laser focus by converging the laser beams into the laser focus around a workpiece to be cleaned, wherein contaminants on the workpiece are removed by colliding the plasma shock wave against the workpiece, and a thermal radiation protector for avoiding a surface damage on the workpiece induced by a plasma thermal radiation entailed by the generation of the plasma shock wave. The thermal radiation protector is installed between the laser focus and the workpiece and is extended toward a downstream of the laser focus to a position where a portion of remaining laser beam when generating the plasma shock wave reaches in order to reflect the remaining laser beam.

    Abstract translation: 干式表面清洁装置包括用于产生激光束的激光器,聚焦透镜,用于通过将激光束聚焦在待清洁的工件周围的激光焦点中来产生激光焦点周围的等离子体冲击波,其中去除工件上的污染物 通过使等离子体冲击波与工件相撞,以及热辐射保护器,用于避免由等离子体冲击波的产生所引起的等离子体热辐射引起的对工件的表面损伤。 热辐射保护器安装在激光焦点和工件之间,并且朝向激光焦点的下游延伸到当产生等离子体冲击波时剩余激光束的一部分到达以便反射剩余的激光束的位置。

    Multiple level program verify in a memory device
    4.
    发明授权
    Multiple level program verify in a memory device 有权
    在存储设备中进行多级程序验证

    公开(公告)号:US08717823B2

    公开(公告)日:2014-05-06

    申请号:US13537150

    申请日:2012-06-29

    CPC classification number: G11C11/5628 G11C16/3454 G11C16/3459 G11C2211/5621

    Abstract: A series of programming pulses are applied to a memory cell to be programmed. A program verify pulse, at an initial program verify voltage, is applied to the memory cell after each programming pulse. The initial program verify voltage is a verify voltage that has been increased by a quick charge loss voltage. The quick charge loss voltage is subtracted from the initial program verify voltage after either a programming pulse has reached a certain reference voltage or a quantity of programming pulses has reached a pulse count threshold.

    Abstract translation: 一系列编程脉冲被施加到要编程的存储器单元。 在每个编程脉冲之后,在初始程序验证电压下将程序验证脉冲施加到存储单元。 初始程序验证电压是通过快速充电损耗电压增加的验证电压。 在编程脉冲达到某个参考电压或编程脉冲数达到脉冲计数阈值之后,从初始编程验证电压中减去快速充电损耗电压。

    Method of manufacturing build-up printed circuit board
    9.
    发明申请
    Method of manufacturing build-up printed circuit board 失效
    制造印刷电路板的方法

    公开(公告)号:US20070261234A1

    公开(公告)日:2007-11-15

    申请号:US11709215

    申请日:2007-02-22

    Abstract: Disclosed is a method of manufacturing a build-up printed circuit board, in which the circuit of a build-up printed circuit board including a core layer and an outer layer is realized by forming the metal seed layer of the core layer using a dry process, consisting of ion beam surface treatment and vacuum deposition, instead of a conventional wet process, including a wet surface roughening process and electroless plating. When the wet process is replaced with the dry process in the method of the invention, the circuit layer can be formed in an environmentally friendly manner, and as well, all circuit layers of the substrate including the core layer and the outer layer can be manufactured through a semi-additive process. Further, the peel strength between the resin substrate and the metal layer can be increased, thus realizing a highly reliable fine circuit.

    Abstract translation: 公开了一种积层印刷电路板的制造方法,其中通过使用干法形成芯层的金属种子层来实现包括芯层和外层的积层印刷电路板的电路 ,由离子束表面处理和真空沉积组成,代替常规的湿法,包括湿表面粗糙化处理和无电镀。 当在本发明的方法中用干法代替湿法时,电路层可以以环境友好的方式形成,并且可以制造包括芯层和外层的基片的所有电路层 通过半加成过程。 此外,可以提高树脂基板和金属层之间的剥离强度,从而实现高可靠性的精细电路。

    MULTIPLE LEVEL PROGRAM VERIFY IN A MEMORY DEVICE
    10.
    发明申请
    MULTIPLE LEVEL PROGRAM VERIFY IN A MEMORY DEVICE 有权
    存储器件中的多级程序验证

    公开(公告)号:US20120269004A1

    公开(公告)日:2012-10-25

    申请号:US13537150

    申请日:2012-06-29

    CPC classification number: G11C11/5628 G11C16/3454 G11C16/3459 G11C2211/5621

    Abstract: A series of programming pulses are applied to a memory cell to be programmed. A program verify pulse, at an initial program verify voltage, is applied to the memory cell after each programming pulse. The initial program verify voltage is a verify voltage that has been increased by a quick charge loss voltage. The quick charge loss voltage is subtracted from the initial program verify voltage after either a programming pulse has reached a certain reference voltage or a quantity of programming pulses has reached a pulse count threshold.

    Abstract translation: 一系列编程脉冲被施加到要编程的存储器单元。 在每个编程脉冲之后,在初始程序验证电压下将程序验证脉冲施加到存储单元。 初始程序验证电压是通过快速充电损耗电压增加的验证电压。 在编程脉冲达到某个参考电压或编程脉冲数达到脉冲计数阈值之后,从初始编程验证电压中减去快速充电损耗电压。

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