利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

41 条记录 (耗时 0.024 秒)

    Angular rate sensor
    2.
    发明授权
    Angular rate sensor 有权
    角速度传感器

    公开(公告)号：US08459108B2

    公开(公告)日：2013-06-11

    申请号：US13029520

    申请日：2011-02-17

    申请人： Kazunori Ohta ,  Masahide Hayashi

    发明人： Kazunori Ohta ,  Masahide Hayashi

    IPC分类号： G01P1/02

    CPC分类号： G01C19/5783 ,  G01C19/56 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/15311 ,  H01L2924/00014

    摘要： An angular rate sensor includes a metallic core board having a core meal layer made of a metal plate and a wiring layer including a wiring structure, a semiconductor device for detecting an angular rate fixed on the core metal layer, and a cap fixed to the wiring layer. The semiconductor device for detecting an angular rate is disposed in a hollow chamber formed by the cap and the metallic core board. The metallic core board, the semiconductor device, and the cap are molded with resin. Consequently, the angular rate sensor has a packaging structure in which electromagnetic noise resistance and moisture resistance are improved while stress applied to the semiconductor device for detecting an angular rate is reduced.

    摘要翻译： 角速率传感器包括具有由金属板制成的芯粕层的金属芯板和包括布线结构的布线层，用于检测固定在芯金属层上的角速率的半导体器件和固定到布线的帽 层。 用于检测角速率的半导体装置设置在由盖和金属芯板形成的中空室中。 金属芯板，半导体器件和盖子用树脂模制。 因此，角速率传感器具有改善电磁噪声阻抗和耐湿性的封装结构，同时减小了施加到用于检测角速率的半导体器件的应力。

    Physical Quantity Detector
    3.
    发明申请
    Physical Quantity Detector 有权
    物理量检测器

    公开(公告)号：US20130241013A1

    公开(公告)日：2013-09-19

    申请号：US13878776

    申请日：2011-10-07

    申请人： Kiyoko Yamanaka ,  Kengo Suzuki ,  Kazunori Ohta ,  Heewon Jeong ,  Masahide Hayashi

    发明人： Kiyoko Yamanaka ,  Kengo Suzuki ,  Kazunori Ohta ,  Heewon Jeong ,  Masahide Hayashi

    IPC分类号： B81B7/00

    CPC分类号： B81B7/0058 ,  G01C19/5783 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0845 ,  H01L24/32 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00

    摘要： Provided is an inertial sensor device comprising a detection part having an MEMS structure, wherein convenience during sensor installation is ensured while erroneous operation caused by the application of external vibration is controlled. To achieve this objective, an anti-vibration structure (103) is provided in the inertial sensor device, between a semiconductor chip (102) mounted on a package substrate and a semiconductor chip (104) comprising a sensor detection part. The anti-vibration structure (103) has a structure in which the periphery of an anti-vibration part (103a) is surrounded by an anti-vibration part (103b) comprising a material having a larger Young's modulus.

    摘要翻译： 提供了一种惯性传感器装置，其包括具有MEMS结构的检测部件，其中，在控制由施加外部振动引起的错误操作的同时确保传感器安装期间的便利性。 为了实现该目的，在惯性传感器装置中，在安装在封装基板上的半导体芯片（102）和包括传感器检测部件的半导体芯片（104）之间设置防振结构（103）。 防振结构（103）具有防振部（103a）的周围由包含杨氏模量较大的材料的防振部（103b）包围的结构。

    Angular Rate Sensor
    4.
    发明申请
    Angular Rate Sensor 有权
    角速率传感器

    公开(公告)号：US20110219873A1

    公开(公告)日：2011-09-15

    申请号：US13029520

    申请日：2011-02-17

    申请人： Kazunori OHTA ,  Masahide Hayashi

    发明人： Kazunori OHTA ,  Masahide Hayashi

    IPC分类号： G01C19/56

    CPC分类号： G01C19/5783 ,  G01C19/56 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/15311 ,  H01L2924/00014

    摘要： An angular rate sensor includes a metallic core board having a core meal layer made of a metal plate and a wiring layer including a wiring structure, a semiconductor device for detecting an angular rate fixed on the core metal layer, and a cap fixed to the wiring layer. The semiconductor device for detecting an angular rate is disposed in a hollow chamber formed by the cap and the metallic core board. The metallic core board, the semiconductor device, and the cap are molded with resin. Consequently, the angular rate sensor has a packaging structure in which electromagnetic noise resistance and moisture resistance are improved while stress applied to the semiconductor device for detecting an angular rate is reduced.

    摘要翻译： 角速率传感器包括具有由金属板制成的芯粕层的金属芯板和包括布线结构的布线层，用于检测固定在芯金属层上的角速率的半导体器件和固定到布线的帽 层。 用于检测角速率的半导体装置设置在由盖和金属芯板形成的中空室中。 金属芯板，半导体器件和盖子用树脂模制。 因此，角速率传感器具有改善电磁噪声阻抗和耐湿性的封装结构，同时减小了施加到用于检测角速率的半导体器件的应力。

    Sensor module and sensor system
    5.
    发明授权
    Sensor module and sensor system 有权
    传感器模块和传感器系统

    公开(公告)号：US09279827B2

    公开(公告)日：2016-03-08

    申请号：US13976372

    申请日：2011-11-24

    申请人： Daisuke Maeda ,  Heewon Jeong ,  Masahide Hayashi

    发明人： Daisuke Maeda ,  Heewon Jeong ,  Masahide Hayashi

    IPC分类号： G01P21/00 ,  G01C19/5776 ,  G01C21/16

    CPC分类号： G01P21/00 ,  G01C19/5776 ,  G01C21/16

    摘要： Reliability and accuracy of a sensor are secured while adjustment cost of a sensor module is suppressed. A signal component analysis part 10 receives a signal output from a signal processing part 7 before passing through a low-pass filter 8, analyzes whether or not application of a fragile frequency with respect to a physical quantity is equal to or more than a threshold level, if the application of the fragile frequency is equal to or more than the threshold level, outputs output stop signals to output signal control parts 9, 16. The output signal control parts 9, 16 receive control signals output from the signal component analysis part 10, and outputs an acceleration signal and a physical quantity signal from which noise has been removed by the low-pass filters 8, 15 through the signal processing parts 7, 14.

    摘要翻译： 确保传感器模块的调整成本得到抑制，从而确保传感器的可靠性和精度。 信号分量分析部分10在通过低通滤波器8之前接收从信号处理部分7输出的信号，分析相对于物理量的脆弱频率的施加是否等于或大于阈值水平 如果脆弱频率的应用等于或大于阈值电平，则将输出停止信号输出到输出信号控制部9,16。输出信号控制部9,16接收从信号分量分析部10输出的控制信号 并且通过信号处理部件7,14输出通过低通滤波器8,15除去噪声的加速度信号和物理量信号。

    Combined sensor
    6.
    发明授权
    Combined sensor 有权
    组合传感器

    公开(公告)号：US09151776B2

    公开(公告)日：2015-10-06

    申请号：US13983828

    申请日：2012-01-10

    申请人： Heewon Jeong ,  Masahide Hayashi

    发明人： Heewon Jeong ,  Masahide Hayashi

    IPC分类号： G01C19/5719 ,  G01P15/125 ,  G01P15/08 ,  G01C19/5733 ,  G01C19/5726 ,  H01L29/84 ,  G01C19/5769

    CPC分类号： G01P15/125 ,  G01C19/5719 ,  G01C19/5726 ,  G01C19/5733 ,  G01C19/5769 ,  G01P15/0802 ,  G01P2015/0814 ,  H01L29/84

    摘要： An object of the invention is to provide a combined sensor capable of suppressing the influence of electrostatic force generated by a potential difference and preventing a reduction in the S/N ratio or a variation in the sensitivity of a sensor.A combined sensor according to the invention includes first and second movable portions and first and second dummy portions provided around the first and second movable portions, which are formed in a layer of a laminated substrate. The first dummy portion and the second dummy portion are electrically separated from each other. A first potential is applied to the first movable portion and the first dummy portion and a second potential is applied to the second movable portion and the second dummy portion (see FIG. 2).

    摘要翻译： 本发明的目的是提供一种组合传感器，其能够抑制由电位差产生的静电力的影响，并且防止S / N比的降低或传感器的灵敏度的变化。 根据本发明的组合传感器包括第一和第二可移动部分以及设置在第一和第二可移动部分周围的第一和第二虚拟部分，其形成在层压基板的层中。 第一虚拟部分和第二虚拟部分彼此电分离。 第一电位施加到第一可动部和第一虚拟部，第二电位施加到第二可动部和第二虚拟部（参照图2）。

    Electronic device and pressure sensor
    8.
    发明授权
    Electronic device and pressure sensor 有权
    电子设备和压力传感器

    公开(公告)号：US07414307B2

    公开(公告)日：2008-08-19

    申请号：US10855344

    申请日：2004-05-28

    申请人： Hiromichi Ebine ,  Katsuhiko Kikuchi ,  Satoshi Shimada ,  Masahide Hayashi

    发明人： Hiromichi Ebine ,  Katsuhiko Kikuchi ,  Satoshi Shimada ,  Masahide Hayashi

    IPC分类号： H01L23/48

    CPC分类号： H05K3/3442 ,  H01L2924/0002 ,  H05K3/202 ,  H05K3/284 ,  H05K2201/09036 ,  H05K2201/09745 ,  H05K2201/10636 ,  Y02P70/611 ,  Y02P70/613 ,  H01L2924/00

    摘要： An electronic device requires an electronic component to be mounted for the purpose of static shielding. The mounting of such an electronic component raises a problem of avoiding thermal stresses and cracks generated due to the difference between the coefficients of linear expansion of component materials. A positioning recess, a joining-substance thickness ensuring recess, a joining-substance thickness ensuring projection, etc. are formed in a combined manner in an electronic component mount portion of each of leads, whereby spreading of cracks generated in the joining substance can be suppressed and reliability can be improved. Filling a sealing material so as to seal and restrain the electronic component mounted in the electronic component mount portion without leaving voids contributes to further suppressing spreading of cracks generated in the joining substance and ensuring more improved reliability of the joining substance.

    摘要翻译： 电子设备需要为了静电屏蔽而安装电子部件。 这种电子部件的安装提出了避免由于部件材料的线性膨胀系数之间的差异而产生的热应力和裂纹的问题。 在各引线的电子部件安装部中，以组合的方式形成定位凹部，接合物质厚度确保凹部，接合物质厚度确保凹部等，由此在接合物质中产生的裂纹的扩散可以 可以提高抑制和可靠性。 填充密封材料以密封和限制安装在电子部件安装部分中的电子部件而不留空隙有助于进一步抑制在接合物质中产生的裂纹的扩散，并确保接合物质的可靠性更好。

    Structure and method of manufacturing the same
    9.
    发明授权
    Structure and method of manufacturing the same 失效
    其制造方法及结构

    公开(公告)号：US5389198A

    公开(公告)日：1995-02-14

    申请号：US763519

    申请日：1991-09-23

    申请人： Akira Koide ,  Kazuo Sato ,  Seiko Suzuki ,  Norio Ichikawa ,  Hidehito Obayashi ,  Masahide Hayashi

    发明人： Akira Koide ,  Kazuo Sato ,  Seiko Suzuki ,  Norio Ichikawa ,  Hidehito Obayashi ,  Masahide Hayashi

    IPC分类号： G01P15/125 ,  B81B3/00 ,  H01L21/306 ,  H01L21/308 ,  H01L29/84 ,  H01L21/00

    CPC分类号： H01L21/30608 ,  H01L21/3086 ,  G01P2015/0828

    摘要： A method of manufacturing structures such as a pressure gauge, an accelerometer and the like with a single crystal material such as silicon uses etching techniques where the shape of a part subjected to stress concentration has a curvature, another part is formed in a plane body and a polyhedron is constituted by combining both.To attain the above constitution, a wafer of single crystal material is formed with a stepped surface having a value corresponding to at least the depth of the curvature in a first anisotropic etching process using a prescribed etching mask, and in a second anisotropic etching process, an etching mask is used by removing at least a part of the etching mask used in the first anisotropic etching process.

    摘要翻译： 使用诸如硅的单晶材料制造诸如压力计，加速度计等的结构的方法使用蚀刻技术，其中经受应力集中的部分的形状具有曲率，另一部分形成在平面体中， 多面体是通过组合两者构成的。 为了实现上述结构，在使用规定的蚀刻掩模的第一各向异性蚀刻工艺中，形成具有至少与曲率深度相对应的值的阶梯面的单晶材料晶片，在第二各向异性蚀刻工艺中， 通过去除在第一各向异性蚀刻工艺中使用的蚀刻掩模的至少一部分来使用蚀刻掩模。

    Inertia sensor
    10.
    发明授权
    Inertia sensor 有权
    惯性传感器

    公开(公告)号：US09182421B2

    公开(公告)日：2015-11-10

    申请号：US13807284

    申请日：2011-05-25

    申请人： Heewon Jeong ,  Munenori Degawa ,  Masahide Hayashi

    发明人： Heewon Jeong ,  Munenori Degawa ,  Masahide Hayashi

    IPC分类号： G01C19/56 ,  G01C19/5719 ,  G01C19/5747 ,  G01C19/574

    CPC分类号： G01P9/04 ,  G01C19/5719 ,  G01C19/574 ,  G01C19/5747

    摘要： This invention is directed to provision of high-performance inertial sensor that can sustain SNR even in an environment where vibration disturbance exists. A vibration type inertial sensor comprises: two deadweights (2, 3); means (C1, C2, C3, C4, +vd, −vd) for displacing the two dead weights in the anti-phase; two sets of electrodes (C5, C6, C7, C8) for detecting, as capacitance changes, the displacements of the two dead weights; and a C/V converting unit (53) for converting the capacitance changes of the electrodes to electric signals. In the vibration type inertial sensor, a set of electrodes (e.g., C5 and C8), which exhibit an increased electrostatic capacitance therebetween in the case where the two dead weights (2, 3) are displaced in the anti-phase, are electrically connected to each other, and a set of electrodes (e.g., C6 and C7), which exhibit a reduced electrostatic capacitance therebetween in the foregoing case, are electrically connected to each other, and further these sets of electrodes are connected to the C/V converting unit (53).

    摘要翻译： 本发明涉及提供即使在存在振动扰动的环境中也能维持SNR的高性能惯性传感器。 振动型惯性传感器包括：两个绞车（2,3）; 意味着用于在反相中移位两个死重的（C1，C2，C3，C4，+ vd，-vd） 两组电极（C5，C6，C7，C8），用于随着电容的变化检测两个死重的位移; 以及用于将电极的电容变化转换为电信号的C / V转换单元（53）。 在振动型惯性传感器中，在两个死重（2,3）以反相位移的情况下，一组电极（例如，C5和C8）电连接在一起，这些电极在静电电容之间呈现增加的静电电容 并且在上述情况下在其间显示减小的静电电容的一组电极（例如，C6和C7）彼此电连接，并且这些电极组还连接到C / V转换器 单位（53）。